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F from 
O
?Tang, T. L.*; Uesaka, Tomohiro*; Kawase, Shoichiro; Beaumel, D.*; Dozono, Masanori*; Fujii, Toshihiko*; Fukuda, Naoki*; Fukunaga, Taku*; Galindo-Uribarri, A.*; Hwang, S. H.*; et al.
Physical Review Letters, 124(21), p.212502_1 - 212502_6, 2020/05
Times Cited Count：9 Percentile：88.96(Physics, Multidisciplinary)The structure of a neutron-rich F nucleus is investigated by a quasifree (
) knockout reaction. The sum of spectroscopic factors of 
orbital is found to be 1.0 
0.3. The result shows that the O core of F nucleus significantly differs from a free O nucleus, and the core consists of 
35% O
, and 65% excited O. The result shows that the O core of F nucleus significantly differs from a free O nucleus. The result may infer that the addition of the 
proton considerably changes the neutron structure in F from that in O, which could be a possible mechanism responsible for the oxygen dripline anomaly.
Abe, Sosuke*; Ono, Shinya*; Kanemura, Rui*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*
Applied Physics Express, 6(11), p.115701_1 - 115701_4, 2013/11
Times Cited Count：3 Percentile：15.85(Physics, Applied)Ono, Shinya*; Inoue, Kei*; Morimoto, Masahiro*; Arae, Sadanori*; Toyoshima, Hiroaki*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*
Surface Science, 606(21-22), p.1685 - 1692, 2012/11
Times Cited Count：7 Percentile：34.95(Chemistry, Physical)Ono, Shinya*; Inoue, Kei*; Morimoto, Masahiro*; Arae, Sadanori*; Toyoshima, Hiroaki*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*
Shingaku Giho, 111(114), p.23 - 27, 2011/07
The initial oxidation on high-index silicon surfaces with (113) and (120) orientations at 820 K has been investigated by real-time X-ray photoemission spectroscopy (Si 2p and O 1s) using 687 eV photons. The time evolutions of the Si
(n=1-4) components in the Si 2p spectrum indicate that the Si
state is suppressed on high-index surfaces compared with Si(001). The O 1s state consists of two components, a low-binding-energy component (LBC) and a high-binding-energy component (HBC). It is suggested that the O atom in strained Si-O-Si contributes to the LBC component. The reaction rates are slower on high-index surfaces compared with that on Si(001).
Ono, Shinya*; Inoue, Kei*; Morimoto, Masahiro*; Arae, Sadanori*; Toyoshima, Hiroaki*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*
no journal, ,
A 3
2 reconstruction surface is made at the Si(113) surface. The oxidation processes by O
molecules were observed by real-time photoelectron spectroscopy. All experiments were conducted using the JAEA surface chemistry experimental station at BL23SU in the SPring-8. Time evolution of Si2p and O1s photoelectron spectra were observed. A suboxide Si
component ratio increased during oxidation as the Si(110) surface case. Both of Si(110) and (113) surfaces have a pentagon structure on the reconstruction surface. The increase of Si component in the oxidation of the Si(11n) surface can be understood as competing formation of an SiO/Si(001) type interface and an SiO/Si(111) type interface.
Ono, Shinya*; Inoue, Kei*; Morimoto, Masahiro*; Arae, Sadanori*; Toyoshima, Hiroaki*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*
no journal, ,
no abstracts in English
Ono, Shinya*; Inoue, Kei*; Momose, Tatsuya*; Kanemura, Rui*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*
no journal, ,
no abstracts in English
Ono, Shinya*; Inoue, Kei*; Momose, Tatsuya*; Kanemura, Rui*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*
no journal, ,
no abstracts in English
Abe, Sosuke*; Ono, Shinya*; Kanemura, Rui*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*
no journal, ,
no abstracts in English
Ono, Shinya*; Kanemura, Rui*; Abe, Sosuke*; Inoue, Kei*; Momose, Tatsuya*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*
no journal, ,
no abstracts in English
Ono, Shinya*; Abe, Sosuke*; Kanemura, Rui*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*
no journal, ,
Abe, Sosuke*; Ono, Shinya*; Kanemura, Rui*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*
no journal, ,
no abstracts in English
/Si in oxidation processes of Si high index surfacesAbe, Sosuke*; Ono, Shinya*; Kanemura, Rui*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*
no journal, ,
no abstracts in English
Ono, Shinya*; Abe, Sosuke*; Kanemura, Rui*; Miura, Shu*; Narishige, Takuma*; Inoue, Kei*; Momose, Tatsuya*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; et al.
no journal, ,
no abstracts in English
