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Journal Articles

First observation of $$^{28}$$O

Kondo, Yosuke*; Achouri, N. L.*; Al Falou, H.*; Atar, L.*; Aumann, T.*; Baba, Hidetada*; Boretzky, K.*; Caesar, C.*; Calvet, D.*; Chae, H.*; et al.

Nature, 620(7976), p.965 - 970, 2023/08

no abstracts in English

Journal Articles

Intruder configurations in $$^{29}$$Ne at the transition into the island of inversion; Detailed structure study of $$^{28}$$Ne

Wang, H.*; Yasuda, Masahiro*; Kondo, Yosuke*; Nakamura, Takashi*; Tostevin, J. A.*; Ogata, Kazuyuki*; Otsuka, Takaharu*; Poves, A.*; Shimizu, Noritaka*; Yoshida, Kazuki; et al.

Physics Letters B, 843, p.138038_1 - 138038_9, 2023/08

Detailed $$gamma$$-ray spectroscopy of the exotic neon isotope $$^{28}$$Ne has been performed using the one-neutron removal reaction from $$^{29}$$Ne. Based on an analysis of parallel momentum distributions, a level scheme with spin-parity assignments has been constructed for $$^{28}$$Ne and the negative-parity states are identified for the first time. The measured partial cross sections and momentum distributions reveal a significant intruder p-wave strength providing evidence of the breakdown of the N = 20 and N = 28 shell gaps. Only a weak, possible f-wave strength was observed to bound final states. Large-scale shell-model calculations with different effective interactions do not reproduce the large p-wave and small f-wave strength observed experimentally, indicating an ongoing challenge for a complete theoretical description of the transition into the island of inversion along the Ne isotopic chain.

Journal Articles

A Lagrangian construction of rotating star models

Ogata, Misa*; Okawa, Hirotada*; Fujisawa, Kotaro*; Yasutake, Nobutoshi; Yamamoto, Yu*; Yamada, Shoichi*

Monthly Notices of the Royal Astronomical Society, 521(2), p.2561 - 2576, 2023/05

Journal Articles

A Novel Lagrangian formulation to construct relativistic rotating stars; Towards its application to their evolution calculations

Okawa, Hirotada*; Fujisawa, Kotaro*; Yasutake, Nobutoshi; Ogata, Misa*; Yamamoto, Yu*; Yamada, Shoichi*

Monthly Notices of the Royal Astronomical Society, 520(1), p.24 - 43, 2023/03

Journal Articles

How different is the core of $$^{25}$$F from $$^{24}$$O$$_{g.s.}$$ ?

Tang, T. L.*; Uesaka, Tomohiro*; Kawase, Shoichiro; Beaumel, D.*; Dozono, Masanori*; Fujii, Toshihiko*; Fukuda, Naoki*; Fukunaga, Taku*; Galindo-Uribarri, A.*; Hwang, S. H.*; et al.

Physical Review Letters, 124(21), p.212502_1 - 212502_6, 2020/05

 Times Cited Count:14 Percentile:74.77(Physics, Multidisciplinary)

The structure of a neutron-rich $$^{25}$$F nucleus is investigated by a quasifree ($$p,2p$$) knockout reaction. The sum of spectroscopic factors of $$pi 0d_{5/2}$$ orbital is found to be 1.0 $$pm$$ 0.3. The result shows that the $$^{24}$$O core of $$^{25}$$F nucleus significantly differs from a free $$^{24}$$O nucleus, and the core consists of $$sim$$35% $$^{24}$$O$$_{rm g.s.}$$, and $$sim$$65% excited $$^{24}$$O. The result shows that the $$^{24}$$O core of $$^{25}$$F nucleus significantly differs from a free $$^{24}$$O nucleus. The result may infer that the addition of the $$0d_{5/2}$$ proton considerably changes the neutron structure in $$^{25}$$F from that in $$^{24}$$O, which could be a possible mechanism responsible for the oxygen dripline anomaly.

Journal Articles

Characterization of monolayer oxide formation processes on high-index Si surface by photoelectron spectroscopy with synchrotron radiation

Abe, Sosuke*; Ono, Shinya*; Kanemura, Rui*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*

Applied Physics Express, 6(11), p.115701_1 - 115701_4, 2013/11

 Times Cited Count:4 Percentile:18.44(Physics, Applied)

Journal Articles

Time-evolution of thermal oxidation on high-index silicon surfaces; Real-time photoemission spectroscopic study with synchrotron radiation

Ono, Shinya*; Inoue, Kei*; Morimoto, Masahiro*; Arae, Sadanori*; Toyoshima, Hiroaki*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*

Surface Science, 606(21-22), p.1685 - 1692, 2012/11

 Times Cited Count:8 Percentile:35.48(Chemistry, Physical)

Journal Articles

Characterization of initial oxidation process on high-index silicon surfaces by real-time photoemission spectroscopy

Ono, Shinya*; Inoue, Kei*; Morimoto, Masahiro*; Arae, Sadanori*; Toyoshima, Hiroaki*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*

Shingaku Giho, 111(114), p.23 - 27, 2011/07

The initial oxidation on high-index silicon surfaces with (113) and (120) orientations at 820 K has been investigated by real-time X-ray photoemission spectroscopy (Si 2p and O 1s) using 687 eV photons. The time evolutions of the Si$$^{n+}$$ (n=1-4) components in the Si 2p spectrum indicate that the Si$$^{2+}$$ state is suppressed on high-index surfaces compared with Si(001). The O 1s state consists of two components, a low-binding-energy component (LBC) and a high-binding-energy component (HBC). It is suggested that the O atom in strained Si-O-Si contributes to the LBC component. The reaction rates are slower on high-index surfaces compared with that on Si(001).

Oral presentation

Real-time photoemission spectroscopy measurements of high-index Si surfaces

Ono, Shinya*; Inoue, Kei*; Morimoto, Masahiro*; Arae, Sadanori*; Toyoshima, Hiroaki*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*

no journal, , 

A 3$$times$$2 reconstruction surface is made at the Si(113) surface. The oxidation processes by O$$_{2}$$ molecules were observed by real-time photoelectron spectroscopy. All experiments were conducted using the JAEA surface chemistry experimental station at BL23SU in the SPring-8. Time evolution of Si2p and O1s photoelectron spectra were observed. A suboxide Si$$^{3+}$$ component ratio increased during oxidation as the Si(110) surface case. Both of Si(110) and (113) surfaces have a pentagon structure on the reconstruction surface. The increase of Si$$^{3+}$$ component in the oxidation of the Si(11n) surface can be understood as competing formation of an SiO$$_{2}$$/Si(001) type interface and an SiO$$_{2}$$/Si(111) type interface.

Oral presentation

Real-time photoemission spectroscopy measurements of initial oxidation process of high-index Si surfaces

Ono, Shinya*; Inoue, Kei*; Morimoto, Masahiro*; Arae, Sadanori*; Toyoshima, Hiroaki*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*

no journal, , 

no abstracts in English

Oral presentation

Analysis of initial oxidation process of high-index Si surfaces using supersonic molecular beam

Ono, Shinya*; Inoue, Kei*; Momose, Tatsuya*; Kanemura, Rui*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*

no journal, , 

no abstracts in English

Oral presentation

Analysis of plane direction dependence for Si initial oxidation reactions induced by supersonic molecular beams

Ono, Shinya*; Inoue, Kei*; Momose, Tatsuya*; Kanemura, Rui*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*

no journal, , 

no abstracts in English

Oral presentation

Analysis of temperature dependence in thermal oxidation process on high-index Si surfaces

Abe, Sosuke*; Ono, Shinya*; Kanemura, Rui*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*

no journal, , 

no abstracts in English

Oral presentation

Analysis of initial oxidation process of high-index Si surfaces using supersonic molecular beam, 2

Ono, Shinya*; Kanemura, Rui*; Abe, Sosuke*; Inoue, Kei*; Momose, Tatsuya*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*

no journal, , 

no abstracts in English

Oral presentation

Real-time observation of thermal oxidation process on high-index silicon surfaces by means of photoemission spectroscopy with synchrotron radiation

Ono, Shinya*; Abe, Sosuke*; Kanemura, Rui*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*

no journal, , 

Oral presentation

Analysis of temperature dependence in thermal oxidation process on high-index Si surfaces, 2

Abe, Sosuke*; Ono, Shinya*; Kanemura, Rui*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*

no journal, , 

no abstracts in English

Oral presentation

Interface structures and electronic states of Si$$_{2}$$/Si in oxidation processes of Si high index surfaces

Abe, Sosuke*; Ono, Shinya*; Kanemura, Rui*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; Yasuda, Tetsuji*; Tanaka, Masatoshi*

no journal, , 

no abstracts in English

Oral presentation

Investigation of the difference between thermal oxidation and supersonic molecular beam induced oxidation on Si(113)

Ono, Shinya*; Abe, Sosuke*; Kanemura, Rui*; Miura, Shu*; Narishige, Takuma*; Inoue, Kei*; Momose, Tatsuya*; Yoshigoe, Akitaka; Teraoka, Yuden; Ogata, Shoichi*; et al.

no journal, , 

no abstracts in English

18 (Records 1-18 displayed on this page)
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