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Journal Articles

Oxidation of anatase TiO$$_{2}$$(001) surface using supersonic seeded oxygen molecular beam

Katsube, Daiki*; Ono, Shinya*; Takayanagi, Shuhei*; Ojima, Shoki*; Maeda, Motoyasu*; Origuchi, Naoki*; Ogawa, Arata*; Ikeda, Natsuki*; Aoyagi, Yoshihide*; Kabutoya, Yuito*; et al.

Langmuir, 37(42), p.12313 - 12317, 2021/10

 Times Cited Count:1 Percentile:6.77(Chemistry, Multidisciplinary)

We investigated the oxidation of oxygen vacancies at the surface of anatase TiO$$_{2}$$(001) using supersonic seeded molecular beam (SSMB) of oxygen. The oxygen vacancies at the top-surface and sub-surface could be eliminated by the supply of oxygen using an SSMB. These results indicate that the interstitial vacancies can be mostly assigned to oxygen vacancies, which can be effectively eliminated by using an oxygen SSMB. Oxygen vacancies are present on the surface of anatase TiO$$_{2}$$(001) when it is untreated before transfer to a vacuum chamber. These vacancies, which are stable in the as-grown condition, could also be effectively eliminated using the oxygen SSMB.

Oral presentation

Thermal hazard evaluation of hydrazine/nitric acid mixtures, 2

Sato, Yoshihiko; Sato, Soichi; Inano, Masatoshi; Kimura, Arata*; Miyake, Atsumi*; Ogawa, Terushige*

no journal, , 

no abstracts in English

Oral presentation

Analysis of thermal stability of graphene thin layers on silicon oxide films

Ogawa, Arata*; Ono, Shinya*; Yoshigoe, Akitaka

no journal, , 

Graphene is an attracting material for future electronic devices. In this conference, we report the study on the analysis of thermal stability of graphene thin layers on silicon oxide films. Photoemission experiments of CVD graphene grown on oxidized silicon substrates using surface chemistry apparatus at BL23SU in SPring-8 were conducted to measure C1s, O1s and Si2p. Temperature dependence of graphene structures was observed to suggest attached graphene monolayer at room temperature, whereas floated graphene monolayer seems to be formed when the substrate temperature increases.

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