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Journal Articles

In situ synchrotron radiation photoemission study of ultrathin surface oxides of Ge(111)-c(2$$times$$8) induced by supersonic O$$_{2}$$ beams

Okada, Ryuta; Yoshigoe, Akitaka; Teraoka, Yuden; Yamada, Yoichi*; Sasaki, Masahiro*

Applied Physics Express, 8(2), p.025701_1 - 025701_4, 2015/02

https://doi.org/10.7567/APEX.8.025701
 Times Cited Count：7 Percentile：30.62(Physics, Applied)

We studied the surface oxidation on a Ge(111)-c(2$$times$$8) surface at room temperature using supersonic oxygen beams as a function of the translational energy of the incident oxygen molecules ranging from 26 meV to 2.3 eV. In situ synchrotron photoemission spectroscopy performed during the oxidation revealed that the surface oxidation terminated with the formation of a sub-monolayer oxide of at most 0.52 ML, for all the beam energies examined. In addition, the oxidation state of the surface oxides was found to depend on the translational energy. These results demonstrate the precise chemical control of the ultrathin surface oxides of Ge(111)-c(2$$times$$8).

Journal Articles

${it In situ}$ synchrotron radiation photoelectron spectroscopy study of the oxidation of the Ge(100)-2$$times$$1 surface by supersonic molecular oxygen beams

Yoshigoe, Akitaka; Teraoka, Yuden; Okada, Ryuta; Yamada, Yoichi*; Sasaki, Masahiro*

Journal of Chemical Physics, 141(17), p.174708_1 - 174708_7, 2014/11

https://doi.org/10.1063/1.4900633
 Times Cited Count：8 Percentile：29.47(Chemistry, Physical)

${{it In situ}}$ synchrotron radiation photoelectron spectroscopy was performed during the oxidation of the Ge(100)-2$$times$$1 surface induced by a molecular oxygen beam with various incident energies up to 2.2 eV from the initial to saturation coverage of surface oxides. The saturation coverage of oxygen on the clean Ge(100) surface was much lower than one monolayer and the oxidation state of Ge was +2 at most. This indicates that the Ge(100) surface is in strong contrast to Si surfaces. The direct adsorption process can be activated by increasing the translational energy, resulting in an increased population of Ge$$^{2+}$$ and a higher final oxygen coverage. Our findings will contribute to the fundamental understanding of oxygen adsorption processes at 300 K from the initial stages to saturated oxidation.

Journal Articles

Surface temperature dependence on AlN film formation processes induced by supersonic N$$_{2}$$ molecular beam

Teraoka, Yuden; Jinno, Muneaki*; Takaoka, Tsuyoshi*; Harries, J.; Okada, Ryuta; Iwai, Yutaro*; Yoshigoe, Akitaka; Komeda, Tadahiro*

Denki Gakkai Rombunshi, C, 134(4), p.524 - 525, 2014/04

https://doi.org/10.1541/ieejeiss.134.524

Journal Articles

Chemical reaction dynamics on ultra-thin oxide layer formation at Ni(001) surface

Teraoka, Yuden; Iwai, Yutaro*; Yoshigoe, Akitaka; Okada, Ryuta

Dai-57-Kai Nihon Gakujutsu Kaigi Zairyo Kogaku Rengo Koenkai Koen Rombunshu, p.44 - 45, 2013/11

no abstracts in English

Journal Articles

Control of oxidation $$cdot$$ nitridation reactions at metal surfaces by molecular beams and their observation via synchrotron radiation photoemission spectroscopy, 2

Teraoka, Yuden; Inoue, Keisuke*; Jinno, Muneaki*; Harries, J.; Okada, Ryuta; Iwai, Yutaro*; Takaoka, Tsuyoshi*; Yoshigoe, Akitaka; Komeda, Tadahiro*

Dai-56-Kai Nihon Gakujutsu Kaigi Zairyo Kogaku Rengo Koenkai Koen Rombunshu, p.360 - 361, 2012/10

no abstracts in English

Oral presentation

Enhancement of surface oxidation on Ge(111)-c(2$$times$$8) caused by supersonic O$$_2$$ beam

Okada, Ryuta; Yoshigoe, Akitaka; Teraoka, Yuden; Jinno, Muneaki*; Yamada, Yoichi*; Sasaki, Masahiro*

no journal, , 

Ge is one of the promising materials for the next generation FET because of its high carrier mobility overwhelming that of Si. Understanding of oxidation processes on Ge substrates with various index planes is necessary to control the quality of oxide layers for these devices. In this research, we employed SR-XPS to analyze oxide layers on the Ge(111)-c(2$$times$$8) surface formed by thermal-O$$_2$$ gas and supersonic O$$_2$$ beam. Ge$$^3$$$$^+$$ component was generated only by high energy supersonic O$$_2$$ beam, although the oxide layer on Ge(100) has up to Ge$$^2$$$$^+$$. This result indicates that oxidation states are different depending on crystal planes. Our results give insight into mechanisms of oxidation processes on Ge.

Oral presentation

Thermal annealing effects below 773 K for nitride films on Al(111) formed by kinetic energy induced N$$_{2}$$ adsorption

Jinno, Muneaki*; Teraoka, Yuden; Takaoka, Tsuyoshi*; Okada, Ryuta; Iwai, Yutaro*; Yoshigoe, Akitaka; Komeda, Tadahiro*

no journal, , 

no abstracts in English

Oral presentation

Enhancement of oxidation at Ge(111)-c(2$$times$$8) surface at 300 K by supersonic O$$_2$$ molecular beam

Okada, Ryuta; Yoshigoe, Akitaka; Teraoka, Yuden; Yamada, Yoichi*; Sasaki, Masahiro*

no journal, , 

Ge has been attracting considerable attention as one of the promising materials for next-generation MOSFET devises because of its high carrier mobility. Understanding of O adsorption process on Ge substrate with various index planes is the most essential to control the quality of oxide layers for these devices. In this research, we employ SR-XPS (synchrotron radiation X-ray photoelectron spectroscopy) measurement to study the oxidation mechanism of the Ge(111) which is known as one of the low index planes. We found the difference in Ge3d profiles of the Ge oxide formed by between supersonic O$$_2$$ molecular beam and back filling O$$_2$$. The difference shows that the kinetic energy of the supersonic O$$_2$$ molecular beam caused higher coordination of Ge oxide than that of back filling O$$_2$$. This result suggests the presence of new O adsorption states activated by the supersonic O$$_2$$ molecular beam.

Oral presentation

Ge$$^3$$$$^+$$ components of oxidized Ge(111)-c(2$$times$$8) surface depending on translational kinetic energy of O$$_2$$

Okada, Ryuta; Yoshigoe, Akitaka; Teraoka, Yuden; Jinno, Muneaki*; Yamada, Yoichi*; Sasaki, Masahiro*

no journal, , 

no abstracts in English

Oral presentation

Thermal stability of AlN layer formed by translational kinetic energy induced N$$_{2}$$ adsorption on Al(111) surface

Jinno, Muneaki*; Teraoka, Yuden; Takaoka, Tsuyoshi*; Harries, J.; Okada, Ryuta; Iwai, Yutaro*; Yoshigoe, Akitaka; Komeda, Tadahiro*

no journal, , 

Oral presentation

Initial sticking probability on Ge(100)-2$$times$$1 depending on translational kinetic energy of O$$_2$$

Yoshigoe, Akitaka; Okada, Ryuta; Teraoka, Yuden; Jinno, Muneaki*; Yamada, Yoichi*; Sasaki, Masahiro*

no journal, , 

no abstracts in English

Oral presentation

Translational energy induced oxidation of Ni(111) surface at room temperature by supersonic O$$_{2}$$ molecular beam

Teraoka, Yuden; Inoue, Keisuke*; Jinno, Muneaki*; Okada, Ryuta; Yoshigoe, Akitaka

no journal, , 

Oral presentation

Possibility of industrial use of HTGR towards low carbon society

Hino, Ryutaro; Shiozawa, Shusaku; Inagaki, Yoshiyuki; Shirasaki, Tomohiko*; Okada, Yoshimi*; Oka, Yoshiaki*

no journal, , 

no abstracts in English

Oral presentation

Synchrotron radiation photoelectron spectroscopic analysis for Ge(111)-c(2$$times$$8) surface oxidized by supersonic O$$_2$$ molecular beam

Okada, Ryuta; Yoshigoe, Akitaka; Teraoka, Yuden; Jinno, Muneaki*; Yamada, Yoichi*; Sasaki, Masahiro*

no journal, , 

Recently, the oxidation of Ge surfaces has been important in application because they are considered to be one of the promising candidates as a new channel material in MOSFET's. In this research, we employed SR-XPS to analyze the oxide layer on the Ge(111)-c(2$$times$$8) surface formed by supersonic O$$_2$$ molecular beam (2.2 eV) and thermal O$$_2$$ gas (0.027 eV). It was clarified that the amount of adsorbed oxygen caused by supersonic O$$_2$$ beam is larger than that caused by thermal O$$_2$$. In addition, comparing Ge oxide components formed by molecular beams with those formed by O$$_{2}$$ gas, we discovered that the Ge$$^3$$$$^+$$ component was generated only by supersonic O$$_2$$ beam corresponding to the increase of adsorbed oxygen amount.

Oral presentation

Enhancement of oxidation of Ge(100)-2$$times$$1 surface caused by supersonic O$$_2$$ molecular beams

Yoshigoe, Akitaka; Okada, Ryuta; Teraoka, Yuden; Jinno, Muneaki*; Yamada, Yoichi*; Sasaki, Masahiro*

no journal, , 

Recently, it has been important to reveal the oxidation on Ge surfaces because they are considered to be one of the promising candidates as an alternative channel material in MOSFET's. In this study, we employed in situ SR-XPS to compare thin oxide layers formed by supersonic O$$_2$$ beam (2.2 eV) and thermal O$$_2$$ (0.027 eV) on Ge(100)-2$$times$$1 at 300 K. It was appeared that the amount of adsorbed oxygen caused by supersonic O$$_2$$ beam (2.2 eV) is more than that caused by thermal O$$_2$$. In addition, by a comparison with Ge oxide components, we discovered the difference of oxygen adsorption sites corresponding to the increase in adsorbed oxygen.

Oral presentation

Enhancement of oxidation at Ge(111)-c(2$$times$$8) surface at 300 K by supersonic O$$_2$$ molecular beam

Okada, Ryuta; Yoshigoe, Akitaka; Teraoka, Yuden; Jinno, Muneaki*; Yamada, Yoichi*; Sasaki, Masahiro*

no journal, , 

no abstracts in English

Oral presentation

The Difference of the oxide layer on Ge(100)-2$$times$$1 at 300 K caused by between supersonic O$$_2$$ beam and back-filling O$$_2$$

Yoshigoe, Akitaka; Okada, Ryuta; Teraoka, Yuden; Jinno, Muneaki*; Yamada, Yoichi*; Sasaki, Masahiro*

no journal, , 

no abstracts in English

Oral presentation

Oxidation reaction dynamics of Ni(111) surface by O$$_{2}$$ molecules at room temperature

Teraoka, Yuden; Inoue, Keisuke*; Jinno, Muneaki*; Yoshigoe, Akitaka; Okada, Ryuta

no journal, , 

no abstracts in English

Oral presentation

Correlation of reaction products and enhancement of oxidation caused by translational kinetic energy of O$$_2$$ molecules on Ge(111)-c(2$$times$$8) at 300 K

Okada, Ryuta; Yoshigoe, Akitaka; Teraoka, Yuden; Jinno, Muneaki*; Yamada, Yoichi*; Sasaki, Masahiro*

no journal, , 

no abstracts in English

Oral presentation

The Synchrotron radiation photoelectron spectroscopic analysis of oxidized Ge(111)-c(2$$times$$8) surface at 300 K caused by translational kinetic energy of O$$_2$$ molecules

Okada, Ryuta; Yoshigoe, Akitaka; Teraoka, Yuden; Jinno, Muneaki*; Yamada, Yoichi*; Sasaki, Masahiro*

no journal, , 

no abstracts in English

64 (Records 1-20 displayed on this page)