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/SiC interfaces formed by thermal oxidation of 4H-SiC(000
) surfacesKirino, Takashi*; Kagei, Yusuke*; Okamoto, Gaku*; Harries, J.; Yoshigoe, Akitaka; Teraoka, Yuden; Mitani, Shuhei*; Nakano, Yuki*; Nakamura, Takashi*; Hosoi, Takuji*; et al.
no journal, ,
In order to study the origin of degradation for interface chracteristics and reliability of SiC(0001)C surfaces, chemical bonding states at SiO/SiC interfaces made on (000)
and (000)
surfaces have been analyzed by using a synchrotron radiation XPS method. Si2p
components were extracted from Si2p photoemission peaks. Sub-oxidea components were observed in addition to the SiC substrate and the oxide layer. In the interface of the oxide layer formed on the (000) surface, Si
component was small, higher oxidation number components were larger, and total amount od sub-oxides was larger comparing to that of the (000) surface. A binding energy for oxide formed on the (000) surface was shifted to 0.22 eV higher side comparing to that of the (000) surface. It indicates that band off-set of conduction band is small in the SiO/SiC interface.
/4H-SiC interfaceKirino, Takashi*; Kagei, Yusuke*; Okamoto, Gaku*; Harries, J.; Yoshigoe, Akitaka; Teraoka, Yuden; Mitani, Shuhei*; Nakano, Yuki*; Nakamura, Takashi*; Hosoi, Takuji*; et al.
no journal, ,
Device ability of SiC-MOSFET's expected from physical data has not been achieved because channel resistance increases by mobility degradation due to Si0/SiC interface defects. Although high channel mobility is obtained in the MOSFET's made on a 4H-SiC(000-1)c face compared to them on a 4H-SiC(0001)Si face, reliability of an oxide film is preferential in the MOSFET's on a 4H-SiC(000-1)c face. Conduction band off-set of SiO/SiC interface and energy distribution of the interface level density are known to be different between MOSFET's on a 4H-SiC(000-1)c face and a 4H-SiC(0001)Si face. Physical origins for them are not known yet. In order to make clear the reasons for degradation of interface characteristics and reliability in the MOSFET's made on an SiC(000-1)c face, we evaluated chemical bonding states and energy band structures of SiO/SiC interfaces formed on an SiC(0001)Si face and an SiC(000-1)c face using synchrotron radiation photoemission spectroscopy.
/4H-SiC conduction band offset by SR-XPSKirino, Takashi*; Kagei, Yusuke*; Okamoto, Gaku*; Harries, J.; Yoshigoe, Akitaka; Teraoka, Yuden; Mitani, Shuhei*; Nakano, Yuki*; Nakamura, Takashi*; Hosoi, Takuji*; et al.
no journal, ,
It has been reported that hydrogen incorporation into thermally grown SiO/4H-SiC structures not only improves the interface quality, but also degrades the gate oxide reliability depending on SiC surface orientation. In this study, energy band diagrams of thermally grown SiO/4H-SiC(0001) and SiO/4H-SiC(000-1) structures with and without high-temperature hydrogen annealing were evaluated by synchrotron radiation X-ray photoelectron spectroscopy. The SiO band gap and valence band offset at SiO/SiC interface were extracted from O 1s energy loss spectra and valence band spectra, respectively. The obtained energy band diagrams revealed that conduction band offsets at SiO/SiC interfaces were decreased after the hydrogen annealing especially for 4H-SiC(000-1) substrates. This is one possible reason for the reliability degradation of 4H-SiC metal-oxide-semiconductor devices by hydrogen incorporation.
Suhara, Junji*; Okamoto, Shuhei*; Mori, Shigenobu*; Kitamura, Seiji
no journal, ,
no abstracts in English
Pirozhkov, A. S.; Kando, Masaki; Esirkepov, T. Z.; Pikuz, T.; Faenov, A. Ya.*; Ogura, Koichi; Hayashi, Yukio; Kotaki, Hideyuki; Ragozin, E. N.*; Neely, D.*; et al.
no journal, ,
Pirozhkov, A. S.; Kando, Masaki; Esirkepov, T. Z.; Pikuz, T.; Faenov, A. Ya.*; Ogura, Koichi; Hayashi, Yukio; Kotaki, Hideyuki; Ragozin, E. N.*; Neely, D.*; et al.
no journal, ,
Nishiuchi, Mamiko; Sakaki, Hironao; Sagisaka, Akito; Maeda, Shota; Pirozhkov, A. S.; Pikuz, T.; Faenov, A. Ya.*; Ogura, Koichi; Fukuda, Yuji; Matsukawa, Kenya*; et al.
no journal, ,
no abstracts in English
Maeda, Shota; Nishiuchi, Mamiko; Sakaki, Hironao; Sagisaka, Akito; Pirozhkov, A. S.; Pikuz, T.; Faenov, A. Ya.*; Ogura, Koichi; Fukuda, Yuji; Matsukawa, Kenya*; et al.
no journal, ,
In JAEA, the high energy ions generated by the interaction between Ultra-intense Ultra-Short pulse laser and thin-foil target is being studied. Irradiating condition must be optimized to generate higher energy ions while suppress the becoming gigantic of laser. It is necessary to know the physical phenomenon in plasma to determine the parameter to optimize from the information on the electron and neutron, X-rays, which are generated simultaneously with ion. In this study, in order to measure electron temperature accurately, an electron spectrometer was developed which have broad range (1-200 MeV). The detector is comprised of permanent magnets and a fluorescent plate, CCD camera. In the presentation, the result of the calibration experiment carried out using 4, 9, 12, 15 MeV quasi-monoenergetic electron beam in HIBMC will be reported. Moreover, response analysis method was inspected using PHITS which is particle transporting Monte Carlo simulation code, and will also report the result.
Pirozhkov, A. S.; Kando, Masaki; Esirkepov, T. Z.; Pikuz, T.; Faenov, A. Ya.*; Ogura, Koichi; Hayashi, Yukio; Kotaki, Hideyuki; Ragozin, E. N.*; Neely, D.*; et al.
no journal, ,
Pirozhkov, A. S.; Kando, Masaki; Esirkepov, T. Z.; Pikuz, T.; Faenov, A. Ya.*; Ogura, Koichi; Hayashi, Yukio; Kotaki, Hideyuki; Ragozin, E. N.*; Neely, D.*; et al.
no journal, ,
Pirozhkov, A. S.; Kando, Masaki; Esirkepov, T. Z.; Pikuz, T.; Faenov, A. Ya.*; Ogura, Koichi; Hayashi, Yukio; Kotaki, Hideyuki; Ragozin, E. N.*; Neely, D.*; et al.
no journal, ,