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Nakamura, Tetsuya*; Imaizumi, Mitsuru*; Sato, Shinichiro; Sugaya, Takeyoshi*; Mochizuki, Toru*; Okano, Yoshinobu*; Oshima, Takeshi
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.73 - 76, 2015/11
The radiation effect on GaAs p-i-n solar cells with quantum dot (QD) in the i-layer was investigated. In a previous work, we particularly noted the degradation of fill-factor (FF) for the QD cells. In this work, to clarify the reason of the FF degradation in QD cells, generation current due to low-energy proton irradiation, which we call ion beam induced current (IBIC), was observed to characterize behavior of the generated minority carrier by the protons in the depletion region where QDs are located. The energy of protons was adjusted to damage the depletion region, and decrease of generation current was measured during the proton irradiation. The results suggest that the serious degradation of FF is caused by a decrease of the carrier collection efficiency in the depletion region due to proton damage.
Kuno, Takehiko; Nakamura, Yoshinobu; Okano, Masanori; Sato, Soichi; Watahiki, Masaru
Proceedings of International Conference on Nuclear Energy System for Future Generation and Global Sustainability (GLOBAL 2005) (CD-ROM), 3 Pages, 2005/10
The elemental composition and amount of insoluble materials in highly active liquid waste (HALW) were measured at the Tokai Reprocessing Plant. To evaluate the composition of the insoluble material between the treatment and storage processes, samples from the evaporator and two vessels which differ in the storage period, were taken. The concentration of insoluble material evaluated by both its weight on filter paper after filtration as well as by filtration volume showed no difference for three different samples. Inductively coupled plasma atomic emission spectrometry and isotope dilution mass spectrometry were used to determine the elements in samples dissolved by sulfate fusion. Analytical data revealed that Zr and Mo were the main components of the insoluble material in three samples, but low levels of Rh, Ru and Pd were also present. These results suggest that most of insoluble material had re-precipitated from the HALW solution during the concentration process.
Nakamura, Tetsuya*; Sumita, Taishi*; Imaizumi, Mitsuru*; Sugaya, Takeyoshi*; Matsubara, Koji*; Niki, Shigeru*; Mochizuki, Toru*; Takeda, Akihiro*; Okano, Yoshinobu*; Sato, Shinichiro; et al.
no journal, ,
Radiation effects on GaAs solar cells with InGaAs dot layers were investigated in order to consider the capability of them for space applications. The GaAs solar cells with 50 InGaAs dot layers and also GaAs solar cells with no dot layer were fabricated using a MBE method. They were irradiated with 150 keV-protons at room temperature. As a result, solar cell with dot layers showed higher radiation degradation in short circuit current however, lower degradation in open circuit voltage. Since no significant difference in the degradation of current - voltage characteristics under dark conditions between dot and non-dot solar cells, it is concluded that the degradation of fill fuctor does not come from the degradation of pn diode characteristics but might come from the degradation of minority carrier diffusion length.
Oshima, Takeshi; Nakamura, Tetsuya*; Sugaya, Takeyoshi*; Sumita, Taishi*; Imaizumi, Mitsuru*; Sato, Shinichiro; Matsubara, Koji*; Niki, Shigeru*; Mochizuki, Toru*; Takeda, Akihiro*; et al.
no journal, ,
Oshima, Takeshi; Nakamura, Tetsuya*; Sumita, Taishi*; Imaizumi, Mitsuru*; Sato, Shinichiro; Sugaya, Takeyoshi*; Matsubara, Koji*; Niki, Shigeru*; Mochizuki, Toru*; Okano, Yoshinobu*
no journal, ,
Sato, Shinichiro; Oshima, Takeshi; Nakamura, Tetsuya*; Imaizumi, Mitsuru*; Sugaya, Takeyoshi*; Matsubara, Koji*; Niki, Shigeru*; Takeda, Akihiro*; Okano, Yoshinobu*
no journal, ,
no abstracts in English