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Ogawa, Shuichi*; Tsuda, Yasutaka; Sakamoto, Tetsuya*; Okigawa, Yuki*; Masuzawa, Tomoaki*; Yoshigoe, Akitaka; Abukawa, Tadashi*; Yamada, Takatoshi*
Applied Surface Science, 605, p.154748_1 - 154748_6, 2022/12
Times Cited Count:3 Percentile:64.73(Chemistry, Physical)Immersion of graphene in KOH solution improves its mobility on SiO/Si wafers. This is thought to be due to electron doping by modification with K atoms, but the K atom concentration C
in the graphene has not been clarified yet. In this study, the C
was determined by XPS analysis using high-brilliance synchrotron radiation. The time evolution of C
was determined by real-time observation, and the C
before irradiation of synchrotron radiation was estimated to be 0.94%. The C 1s spectrum shifted to the low binding energy side with the desorption of K atoms. This indicates that the electron doping concentration into graphene is decreasing, and it is experimentally confirmed that K atoms inject electrons into graphene.