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Umeda, Takahide*; Okamoto, Mitsuo*; Arai, Ryo*; Sato, Yoshihiro*; Kosugi, Ryoji*; Harada, Shinsuke*; Okumura, Hajime*; Makino, Takahiro; Oshima, Takeshi
Materials Science Forum, 778-780, p.414 - 417, 2014/02
Times Cited Count：2 Percentile：78.54Interface defects of Metal-Oxide-Semiconductors (MOSFETs) fabricated on Carbone (C) face 4H-SiC were investigated by Electrically Detected Magnet Resistance (EDMR). Gate oxide of the MOSFETs was formed by either wet-oxidation and H
annealing or dry-oxidation. The values of channel mobility for MOSFETS with wet gate oxide and dry gate oxide are less than 1 and 90 cm
/Vs, respectively. By EDMR measurement under low temperature (less than 20 K), EDMR signals related to C were detected. The peak height of the signals increased with increasing 
-ray doses, and the channel mobility decreased. From this result, it is assumed that hydrogen atoms passivating C dangling bonds are released by -rays and the channel mobility decreases with increasing the C related defects.
Oshima, Takeshi; Lee, K. K.; Ishida, Yuki*; Kojima, Kazutoshi*; Tanaka, Yasunori*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Okumura, Hajime*; Arai, Kazuo*; Kamiya, Tomihiro
Materials Science Forum, 457-460(Part2), p.1405 - 1408, 2004/06
The electrical characteristics of cubic silicon carbide (3C-SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with the current direction in the inversion layer perpendicular to [-110] ([-110]-perpendicular MOSFETs) were compared to those of 3C-SiC MOSFETs with the current direction in the inversion layer parallel to [-110] ([-110]-parallel MOSFETs). The threshold voltage (V
) for both MOSFETs shows -0.5 V although enhancement type MOSFETs were designed. The values of channel mobility which was estimated from linear region of drain current (I
) - drain voltage (V) curves are 230 cm/Vs for [-110]-perpendicular MOSFETs and 215 cm/Vs for [-110]-parallel MOSFETs, indicating no significant difference between both MOSFETs. The value of I for [-110]-perpendicular MOSFETs is of order of 10-8 A at V = 10V and gate voltage (V
) of -2V. However, for [-110]-parallel MOSFETs, I shows of order of -10-6 A at V = 10V and V = -2V.
Oshima, Takeshi; Lee, K. K.; Ishida, Yuki*; Kojima, Kazutoshi*; Tanaka, Yasunori*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Okumura, Hajime*; Arai, Kazuo*; Kamiya, Tomihiro
Japanese Journal of Applied Physics, Part 2, 42(6B), p.L625 - L627, 2003/06
Times Cited Count：37 Percentile：77.51(Physics, Applied)The n-channel Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) were fabricated on cubic silicon carbide (3C-SiC) epitaxial layers grown on 3C-SiC substrates. The gate oxide of the MOSFETs was formed using pyrogenic oxidation at 1100
C. The 3C-SiC MOSFETs showed enhancement type behaviors after annealing at 200C for 30 min in argon atmosphere. The maximum value of the effective channel mobility of the 3C-SiC MOSFETs was 260 cm/Vs. The leakage current of gate oxide was of a few tens of nA/cm at an electric field range below 8.5 MV/cm, and breakdown began around 8.5 MV/cm.
C in dry oxygen ambient on silicon carbide and their thermal annealing effectsYoshikawa, Masahito; Ishida, Yuki*; Jikimoto, Tamotsu*; Hijikata, Yasuto*; Ito, Hisayoshi; Okumura, Hajime*; Takahashi, Tetsuo*; Tsuchida, Hidekazu*; Yoshida, Sadafumi*
Denshi Joho Tsushin Gakkai Rombunshi, C, 86(4), p.426 - 433, 2003/04
no abstracts in English
Oshima, Takeshi; Ito, Hisayoshi; Uedono, Akira*; Suzuki, Ryoichi*; Ishida, Yuki*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Kojima, Kazutoshi; Odaira, Toshiyuki*; Nashiyama, Isamu; et al.
Denshi Gijutsu Sogo Kenkyujo Iho, 62(10-11), p.469 - 476, 1999/00
no abstracts in English
Ito, Hisayoshi; Kawasuso, Atsuo; Oshima, Takeshi; Yoshikawa, Masahito; Nashiyama, Isamu; Okada, Sohei; Tanigawa, Shoichiro*; Okumura, Hajime*; Yoshida, Sadafumi*
Denshi Gijutsu Sogo Kenkyujo Iho, 62(10-11), p.23 - 29, 1999/00
no abstracts in English
Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; *; Onishi, K.*; Okumura, Hajime*; Yoshida, Sadafumi*
Denshi Joho Tsushin Gakkai Rombunshi, C-II, 81(1), p.140 - 150, 1998/01
no abstracts in English
Kawasuso, Atsuo; Morishita, Norio; Oshima, Takeshi; Okada, Sohei; Ito, Hisayoshi; Yoshikawa, Masahito; Nashiyama, Isamu; Yoshida, Sadafumi*; Okumura, Hajime*
Applied Physics A, 67(2), p.209 - 212, 1998/00
Times Cited Count：39 Percentile：82.57(Materials Science, Multidisciplinary)no abstracts in English
-ray irradiation on the electrical characteristics of SiC metal-oxide-semiconductor structuresYoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Takahashi, Y.*; Onishi, K.*; Okumura, Hajime*; Yoshida, Sadafumi*
Electronics and Communication in Japan., Part2, 81(10), p.37 - 47, 1998/00
no abstracts in English
T.Henkel*; *; *; I.Koutzarov*; Okumura, Hajime*; Yoshida, Sadafumi*; Oshima, Takeshi
Mat. Res. Soc. Symp. Proc., 512, p.163 - 168, 1998/00
no abstracts in English
Oshima, Takeshi; Uedono, Akira*; Ito, Hisayoshi; Abe, Koji*; Suzuki, Ryoichi*; *; Aoki, Yasushi; Tanigawa, Shoichiro*; Yoshikawa, Masahito; Mikado, Tomohisa*; et al.
Mater. Sci. Forum, 264-268, p.745 - 748, 1998/00
no abstracts in English
-raysYoshikawa, Masahito; *; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; *; Onishi, K.*; Okumura, Hajime*; Yoshida, Sadafumi*
Mater. Sci. Forum, 264-268, p.1017 - 1020, 1998/00
no abstracts in English
Ito, Hisayoshi; Oshima, Takeshi; Aoki, Yasushi; Abe, Koji*; Yoshikawa, Masahito; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*; Uedono, Akira*; Tanigawa, Shoichiro*
Journal of Applied Physics, 82(11), p.5339 - 5347, 1997/12
Times Cited Count：13 Percentile：58.41(Physics, Applied)no abstracts in English
Uedono, Akira*; Ito, Hisayoshi; Oshima, Takeshi; Suzuki, Ryoichi*; *; Tanigawa, Shoichiro*; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Mikado, Tomohisa*; et al.
Japanese Journal of Applied Physics, Part 1, 36(11), p.6650 - 6660, 1997/11
Times Cited Count：16 Percentile：64.19(Physics, Applied)no abstracts in English
Ito, Hisayoshi; Uedono, Akira*; Oshima, Takeshi; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Tanigawa, Shoichiro*; Okumura, Hajime*; Yoshida, Sadafumi*
Applied Physics A, 65(3), p.315 - 323, 1997/00
Times Cited Count：16 Percentile：64.19(Materials Science, Multidisciplinary)no abstracts in English
Yoshikawa, Masahito; Nemoto, N.*; Ito, Hisayoshi; Okumura, Hajime*; *; Yoshida, Sadafumi*; Nashiyama, Isamu
Mater. Sci. Eng., B, 47(3), p.218 - 223, 1997/00
Times Cited Count：1 Percentile：12.05(Materials Science, Multidisciplinary)no abstracts in English
Ito, Hisayoshi; Kawasuso, Atsuo; Oshima, Takeshi; Yoshikawa, Masahito; Nashiyama, Isamu; Tanigawa, Shoichiro*; *; Okumura, Hajime*; Yoshida, Sadafumi*
Physica Status Solidi (A), 162, p.173 - 198, 1997/00
Times Cited Count：131 Percentile：97.98(Materials Science, Multidisciplinary)no abstracts in English
Yoshikawa, Masahito; *; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*
Radiation Physics and Chemistry, 50(5), p.429 - 433, 1997/00
Times Cited Count：0 Percentile：0.01(Chemistry, Physical)no abstracts in English
Uedono, Akira*; Ito, Hisayoshi; Oshima, Takeshi; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*; *; *; et al.
Japanese Journal of Applied Physics, Part 1, 35(12A), p.5986 - 5990, 1996/12
no abstracts in English
Kawasuso, Atsuo; Ito, Hisayoshi; Okada, Sohei; Okumura, Hajime*
Journal of Applied Physics, 80(10), p.5639 - 5645, 1996/11
Times Cited Count：79 Percentile：93.7(Physics, Applied)no abstracts in English
