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Journal Articles

C-face interface defects in 4H-SiC MOSFETs studied by electrically detected magnetic resonance

Umeda, Takahide*; Okamoto, Mitsuo*; Arai, Ryo*; Sato, Yoshihiro*; Kosugi, Ryoji*; Harada, Shinsuke*; Okumura, Hajime*; Makino, Takahiro; Oshima, Takeshi

Materials Science Forum, 778-780, p.414 - 417, 2014/02

 Times Cited Count:2 Percentile:78.54

Interface defects of Metal-Oxide-Semiconductors (MOSFETs) fabricated on Carbone (C) face 4H-SiC were investigated by Electrically Detected Magnet Resistance (EDMR). Gate oxide of the MOSFETs was formed by either wet-oxidation and H$$_{2}$$ annealing or dry-oxidation. The values of channel mobility for MOSFETS with wet gate oxide and dry gate oxide are less than 1 and 90 cm$$^{2}$$/Vs, respectively. By EDMR measurement under low temperature (less than 20 K), EDMR signals related to C were detected. The peak height of the signals increased with increasing $$gamma$$-ray doses, and the channel mobility decreased. From this result, it is assumed that hydrogen atoms passivating C dangling bonds are released by $$gamma$$-rays and the channel mobility decreases with increasing the C related defects.

Journal Articles

Relationship between the current direction in the inversion layer and the electrical characteristics of metal-oxide-semiconductor field effect transistors on 3C-SiC

Oshima, Takeshi; Lee, K. K.; Ishida, Yuki*; Kojima, Kazutoshi*; Tanaka, Yasunori*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Okumura, Hajime*; Arai, Kazuo*; Kamiya, Tomihiro

Materials Science Forum, 457-460(Part2), p.1405 - 1408, 2004/06

The electrical characteristics of cubic silicon carbide (3C-SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with the current direction in the inversion layer perpendicular to [-110] ([-110]-perpendicular MOSFETs) were compared to those of 3C-SiC MOSFETs with the current direction in the inversion layer parallel to [-110] ([-110]-parallel MOSFETs). The threshold voltage (V$$_{T}$$) for both MOSFETs shows -0.5 V although enhancement type MOSFETs were designed. The values of channel mobility which was estimated from linear region of drain current (I$$_{D}$$) - drain voltage (V$$_{D}$$) curves are 230 cm$$^{2}$$/Vs for [-110]-perpendicular MOSFETs and 215 cm$$^{2}$$/Vs for [-110]-parallel MOSFETs, indicating no significant difference between both MOSFETs. The value of I$$_{D}$$ for [-110]-perpendicular MOSFETs is of order of 10-8 A at V$$_{D}$$ = 10V and gate voltage (V$$_{G}$$) of -2V. However, for [-110]-parallel MOSFETs, I$$_{D}$$ shows of order of -10-6 A at V$$_{D}$$ = 10V and V$$_{G}$$ = -2V.

Journal Articles

The Electrical characteristics of metal-oxide-semiconductor field effect transistors fabricated on cubic silicon carbide

Oshima, Takeshi; Lee, K. K.; Ishida, Yuki*; Kojima, Kazutoshi*; Tanaka, Yasunori*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Okumura, Hajime*; Arai, Kazuo*; Kamiya, Tomihiro

Japanese Journal of Applied Physics, Part 2, 42(6B), p.L625 - L627, 2003/06

 Times Cited Count:37 Percentile:77.51(Physics, Applied)

The n-channel Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) were fabricated on cubic silicon carbide (3C-SiC) epitaxial layers grown on 3C-SiC substrates. The gate oxide of the MOSFETs was formed using pyrogenic oxidation at 1100$$^{circ}$$C. The 3C-SiC MOSFETs showed enhancement type behaviors after annealing at 200$$^{circ}$$C for 30 min in argon atmosphere. The maximum value of the effective channel mobility of the 3C-SiC MOSFETs was 260 cm$$^{2}$$/Vs. The leakage current of gate oxide was of a few tens of nA/cm$$^{2}$$ at an electric field range below 8.5 MV/cm, and breakdown began around 8.5 MV/cm.

Journal Articles

Electrical characteristics of interface defects in oxides grown at 1200 $$^{circ}$$C in dry oxygen ambient on silicon carbide and their thermal annealing effects

Yoshikawa, Masahito; Ishida, Yuki*; Jikimoto, Tamotsu*; Hijikata, Yasuto*; Ito, Hisayoshi; Okumura, Hajime*; Takahashi, Tetsuo*; Tsuchida, Hidekazu*; Yoshida, Sadafumi*

Denshi Joho Tsushin Gakkai Rombunshi, C, 86(4), p.426 - 433, 2003/04

no abstracts in English

Journal Articles

Study of residual defects in ion-implanted and subsequently annealed 3C-SiC

Oshima, Takeshi; Ito, Hisayoshi; Uedono, Akira*; Suzuki, Ryoichi*; Ishida, Yuki*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Kojima, Kazutoshi; Odaira, Toshiyuki*; Nashiyama, Isamu; et al.

Denshi Gijutsu Sogo Kenkyujo Iho, 62(10-11), p.469 - 476, 1999/00

no abstracts in English

Journal Articles

Characterization of point defects in cubic silicon carbide using positron annihilation

Ito, Hisayoshi; Kawasuso, Atsuo; Oshima, Takeshi; Yoshikawa, Masahito; Nashiyama, Isamu; Okada, Sohei; Tanigawa, Shoichiro*; Okumura, Hajime*; Yoshida, Sadafumi*

Denshi Gijutsu Sogo Kenkyujo Iho, 62(10-11), p.23 - 29, 1999/00

no abstracts in English

Journal Articles

Effects of gamma-ray irradiation and the mechanisms on electrical characteristics of SiC metal-oxide-semiconductor structures

Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; *; Onishi, K.*; Okumura, Hajime*; Yoshida, Sadafumi*

Denshi Joho Tsushin Gakkai Rombunshi, C-II, 81(1), p.140 - 150, 1998/01

no abstracts in English

Journal Articles

Silicon vacancies in 3C-SiC observed by positron lifetime and electron spin resonance

Kawasuso, Atsuo; Morishita, Norio; Oshima, Takeshi; Okada, Sohei; Ito, Hisayoshi; Yoshikawa, Masahito; Nashiyama, Isamu; Yoshida, Sadafumi*; Okumura, Hajime*

Applied Physics A, 67(2), p.209 - 212, 1998/00

 Times Cited Count:39 Percentile:82.57(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Effects of $$gamma$$-ray irradiation on the electrical characteristics of SiC metal-oxide-semiconductor structures

Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Takahashi, Y.*; Onishi, K.*; Okumura, Hajime*; Yoshida, Sadafumi*

Electronics and Communication in Japan., Part2, 81(10), p.37 - 47, 1998/00

no abstracts in English

Journal Articles

Scandium and gallium implantation doping of silicon carbide

T.Henkel*; *; *; I.Koutzarov*; Okumura, Hajime*; Yoshida, Sadafumi*; Oshima, Takeshi

Mat. Res. Soc. Symp. Proc., 512, p.163 - 168, 1998/00

no abstracts in English

Journal Articles

Study of thermal annealing of vacancies in ion implanted 3C-SiC by positron annihilation

Oshima, Takeshi; Uedono, Akira*; Ito, Hisayoshi; Abe, Koji*; Suzuki, Ryoichi*; *; Aoki, Yasushi; Tanigawa, Shoichiro*; Yoshikawa, Masahito; Mikado, Tomohisa*; et al.

Mater. Sci. Forum, 264-268, p.745 - 748, 1998/00

no abstracts in English

Journal Articles

Generation mechanisms of trapped charges in oxide layers of 6H-SiC MOS structures irradiated with $$gamma$$-rays

Yoshikawa, Masahito; *; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; *; Onishi, K.*; Okumura, Hajime*; Yoshida, Sadafumi*

Mater. Sci. Forum, 264-268, p.1017 - 1020, 1998/00

no abstracts in English

Journal Articles

Characterization of residual defects in cubic silicon carbide subjected to hot-implantation and subsequent annealing

Ito, Hisayoshi; Oshima, Takeshi; Aoki, Yasushi; Abe, Koji*; Yoshikawa, Masahito; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*; Uedono, Akira*; Tanigawa, Shoichiro*

Journal of Applied Physics, 82(11), p.5339 - 5347, 1997/12

 Times Cited Count:13 Percentile:58.41(Physics, Applied)

no abstracts in English

Journal Articles

Annealing properties of defects in ion-implanted 3C-SiC studied using monoenergetic positron beams

Uedono, Akira*; Ito, Hisayoshi; Oshima, Takeshi; Suzuki, Ryoichi*; *; Tanigawa, Shoichiro*; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Mikado, Tomohisa*; et al.

Japanese Journal of Applied Physics, Part 1, 36(11), p.6650 - 6660, 1997/11

 Times Cited Count:16 Percentile:64.19(Physics, Applied)

no abstracts in English

Journal Articles

Positron annihilation studies of defects in 3C-SiC hot-implanted with nitrogen and aluminum ions

Ito, Hisayoshi; Uedono, Akira*; Oshima, Takeshi; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Tanigawa, Shoichiro*; Okumura, Hajime*; Yoshida, Sadafumi*

Applied Physics A, 65(3), p.315 - 323, 1997/00

 Times Cited Count:16 Percentile:64.19(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Thermal annealing of interface traps and trapped charges induced by irradiation in oxides of 3C-SiC metal-oxide-semiconductor structures

Yoshikawa, Masahito; Nemoto, N.*; Ito, Hisayoshi; Okumura, Hajime*; *; Yoshida, Sadafumi*; Nashiyama, Isamu

Mater. Sci. Eng., B, 47(3), p.218 - 223, 1997/00

 Times Cited Count:1 Percentile:12.05(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Intrinsic defects in cubic silicon carbide

Ito, Hisayoshi; Kawasuso, Atsuo; Oshima, Takeshi; Yoshikawa, Masahito; Nashiyama, Isamu; Tanigawa, Shoichiro*; *; Okumura, Hajime*; Yoshida, Sadafumi*

Physica Status Solidi (A), 162, p.173 - 198, 1997/00

 Times Cited Count:131 Percentile:97.98(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Formation of oxide-trapped charges in 6H-SiC MOS structures

Yoshikawa, Masahito; *; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*

Radiation Physics and Chemistry, 50(5), p.429 - 433, 1997/00

 Times Cited Count:0 Percentile:0.01(Chemistry, Physical)

no abstracts in English

Journal Articles

Defects in ion-implanted 3C-SiC probed by a monoenergetic positron beam

Uedono, Akira*; Ito, Hisayoshi; Oshima, Takeshi; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*; *; *; et al.

Japanese Journal of Applied Physics, Part 1, 35(12A), p.5986 - 5990, 1996/12

no abstracts in English

Journal Articles

Annealing processes of vacancy-type defects in electron-irradiated and as-grown 6H-SiC studied by positron lifetime spectroscopy

Kawasuso, Atsuo; Ito, Hisayoshi; Okada, Sohei; Okumura, Hajime*

Journal of Applied Physics, 80(10), p.5639 - 5645, 1996/11

 Times Cited Count:79 Percentile:93.7(Physics, Applied)

no abstracts in English

45 (Records 1-20 displayed on this page)