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Journal Articles

Sodium-cooled Fast Reactors

Ohshima, Hiroyuki; Morishita, Masaki*; Aizawa, Kosuke; Ando, Masanori; Ashida, Takashi; Chikazawa, Yoshitaka; Doda, Norihiro; Enuma, Yasuhiro; Ezure, Toshiki; Fukano, Yoshitaka; et al.

Sodium-cooled Fast Reactors; JSME Series in Thermal and Nuclear Power Generation, Vol.3, 631 Pages, 2022/07

This book is a collection of the past experience of design, construction, and operation of two reactors, the latest knowledge and technology for SFR designs, and the future prospects of SFR development in Japan. It is intended to provide the perspective and the relevant knowledge to enable readers to become more familiar with SFR technology.

Journal Articles

Heavy-ion induced current through an oxide layer

Takahashi, Yoshihiro*; Oki, Takahiro*; Nagasawa, Takaharu*; Nakajima, Yasuhito*; Kawanabe, Ryu*; Onishi, Kazunori*; Hirao, Toshio; Onoda, Shinobu; Mishima, Kenta; Kawano, Katsuyasu*; et al.

Nuclear Instruments and Methods in Physics Research B, 260(1), p.309 - 313, 2007/07

 Times Cited Count:4 Percentile:35.75(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Optimization for SEU/SET immunity on 0.15 $$mu$$m fully depleted CMOS/SOI digital logic devices

Makihara, Akiko*; Asai, Hiroaki*; Tsuchiya, Yoshihisa*; Amano, Yukio*; Midorikawa, Masahiko*; Shindo, Hiroyuki*; Kuboyama, Satoshi*; Onoda, Shinobu; Hirao, Toshio; Nakajima, Yasuhito*; et al.

Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.95 - 98, 2006/10

no abstracts in English

Journal Articles

Charge collected in Si MOS capacitors and SOI devices p$$^{+}$$n diodes due to heavy ion irradiation

Hirao, Toshio; Laird, J. S.; Onoda, Shinobu; Shibata, Toshihiko*; Wakasa, Takeshi; Yamakawa, Takeshi; Abe, Hiroshi; Takahashi, Yoshihiro*; Onishi, Kazunori*; Ito, Hisayoshi

Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.105 - 109, 2004/10

no abstracts in English

Journal Articles

Heavy-ion induced current in MOS structure

Takahashi, Yoshihiro*; Shibata, Toshihiko*; Murase, Yuji*; Onishi, Kazunori*; Hirao, Toshio; Kamiya, Tomihiro

Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.111 - 114, 2004/10

no abstracts in English

Journal Articles

Consideration to reliability of laser testing for evaluating SEU tolerance

Abe, Tetsuo*; Onishi, Kazunori*; Takahashi, Yoshihiro*; Hirao, Toshio

Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.157 - 160, 2004/10

no abstracts in English

Journal Articles

Radiation-induced trapped charge in metal-nitride-oxide-semiconductor structure

Takahashi, Yoshihiro*; Onishi, Kazunori*; Fujimaki, Takeshi*; Yoshikawa, Masahito

IEEE Transactions on Nuclear Science, 46(6), p.1578 - 1585, 1999/12

 Times Cited Count:23 Percentile:83.14(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

Radiation-induced trapped charge in metal-nitride-oxide-semiconductor structure

Takahashi, Yoshihiro*; Onishi, Kazunori*; Fujimaki, Takeshi*; Yoshikawa, Masahito

Proceedings of 3rd International Workshop on Radiation Effects on Semiconductor Devices for Space Application, p.10 - 15, 1998/00

no abstracts in English

Journal Articles

Depth profiling of oxide-trapped charges in 6H-SiC MOS structures by slant etching method

Saito, Kazunari; Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Takahashi, Yoshihiro*; Onishi, Kazunori*

JAERI-Conf 97-003, p.243 - 248, 1997/03

no abstracts in English

Journal Articles

Depth profile of trapped charges in oxide layer of 6H-SiC metal-oxide-semiconductor structures

Yoshikawa, Masahito; *; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Yoshida, Sadafumi*; Okumura, Hajime*; Takahashi, Yoshihiro*; Onishi, Kazunori*

Journal of Applied Physics, 80(1), p.282 - 287, 1996/07

 Times Cited Count:22 Percentile:70.7(Physics, Applied)

no abstracts in English

Journal Articles

Test structure for determining the charge distribution in the oxide of MOS structure

Takahashi, Yoshihiro*; Imaki, Shunsaku*; Onishi, Kazunori*; Yoshikawa, Masahito

Proceedings of IEEE 1995 International Coferece on Microelectronic Test Structures, Vol.8, p.243 - 246, 1995/03

no abstracts in English

Journal Articles

The Change of the charge distribution in the oxide layer of MOS structure with NH$$_{3}$$ annealing due to $$gamma$$-ray irradiation; Gate voltage dependence

Imaki, Shunsaku*; Takahashi, Yoshihiro*; Yoshikawa, Masahito; Onishi, Kazunori*

Heisei-7-Nendo Nihon Daigaku Riko Gakubu Gakujutsu Koenkai Rombunshu, 0, p.151 - 152, 1995/00

no abstracts in English

Journal Articles

Evaluation of distributed charge in the insulators of MNOS structure by slanted etching method

*; *; Takahashi, Yoshihiro*; Yoshikawa, Masahito; Onishi, Kazunori*

Heisei-7-Nendo Nihon Daigaku Riko Gakubu Gakujutsu Koenkai Rombunshu, 0, p.153 - 154, 1995/00

no abstracts in English

Journal Articles

A Slanted etching method to analyze the trapped charge distribution in the insulators of MIS structures

Onishi, Kazunori*; Takahashi, Yoshihiro*; Imaki, Shunsaku*; *; Yoshikawa, Masahito

Proc. of 21st Int. Symp. for Testing and Failure Analysis (ISTFA 95), 0, p.269 - 274, 1995/00

no abstracts in English

Journal Articles

Evaluation of the charge distribution in the oxide of MOS structure before and after $$gamma$$-ray radiation

*; *; Takahashi, Yoshihiro*; Yoshikawa, Masahito; Onishi, Kazunori*

Denshi Joho Tsushin Gakkai Gijutsu Kenkyu Hokoku, 93(172), p.23 - 27, 1993/07

no abstracts in English

Journal Articles

Thermal annealing effects on build-up of oxide trapped charge in $$gamma$$-ray irradiated 3C-SiC MOS structure

Nemoto, Norio*; Yoshikawa, Masahito; Nashiyama, Isamu; Yoshida, Sadafumi*; Onishi, Kazunori*

Heisei-5-Nendo (Dai-37-Kai) Nihon Daigaku Riko Gakubu Gakujutsu Koenkai Koen Rombunshu; Zairyo, Bussei, p.149 - 150, 1993/00

no abstracts in English

Journal Articles

Evaluation of charge distribution in insulators by means of slanted etching

Imaki, Shunsaku*; *; Takahashi, Yoshihiro*; Yoshikawa, Masahito; Onishi, Kazunori*

Heisei-5-Nendo (Dai-37-Kai) Nihon Daigaku Riko Gakubu Gakujutsu Koenkai Koen Rombunshu; Zairyo, Bussei, p.135 - 136, 1993/00

no abstracts in English

Journal Articles

Thermal annealing effects on electric characteristics of MIS structures with nitride layers

*; Takahashi, Yoshihiro*; Yoshikawa, Masahito; Onishi, Kazunori*

Heisei-5-Nendo (Dai-37-Kai) Nihon Daigaku Riko Gakubu Gakujutsu Koenkai Koen Rombunshu; Zairyo, Bussei, p.133 - 134, 1993/00

no abstracts in English

Journal Articles

Charge trapping mechanism of MNOS structure with $$gamma$$-ray irradiation

*; *; Takahashi, Yoshihiro*; Yoshikawa, Masahito; Onishi, Kazunori*

Heisei-5-Nendo (Dai-37-Kai) Nihon Daigaku Riko Gakubu Gakujutsu Koenkai Koen Rombunshu; Zairyo, Bussei, p.131 - 132, 1993/00

no abstracts in English

26 (Records 1-20 displayed on this page)