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Journal Articles

Radiation response of silicon carbide metal-oxide-semiconductor transistors in high dose region

Oshima, Takeshi; Yokoseki, Takashi; Murata, Koichi; Matsuda, Takuma; Mitomo, Satoshi; Abe, Hiroshi; Makino, Takahiro; Onoda, Shinobu; Hijikata, Yasuto*; Tanaka, Yuki*; et al.

Japanese Journal of Applied Physics, 55(1S), p.01AD01_1 - 01AD01_4, 2016/01

 Times Cited Count:10 Percentile:49.94(Physics, Applied)

Journal Articles

New application of NV centers in CVD diamonds as a fluorescent nuclear track detector

Onoda, Shinobu; Haruyama, Moriyoshi; Teraji, Tokuyuki*; Isoya, Junichi*; Kada, Wataru*; Hanaizumi, Osamu*; Oshima, Takeshi

Physica Status Solidi (A), 212(11), p.2641 - 2644, 2015/11

 Times Cited Count:6 Percentile:33.5(Materials Science, Multidisciplinary)

Journal Articles

Defect engineering in silicon carbide; Single photon sources, quantum sensors and RF emitters

Kraus, H.; Simin, D.*; Fuchs, F.*; Onoda, Shinobu; Makino, Takahiro; Dyakonov, V.*; Oshima, Takeshi

Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.176 - 179, 2015/11

Journal Articles

A Development of super radiation-hardened power electronics using silicon carbide semiconductors; Toward MGy-class radiation resistivity

Hijikata, Yasuto*; Mitomo, Satoshi*; Matsuda, Takuma*; Murata, Koichi*; Yokoseki, Takashi*; Makino, Takahiro; Takeyama, Akinori; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; et al.

Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.130 - 133, 2015/11

Journal Articles

Effect of humidity and temperature on the radiation response of SiC MOSFETs

Takeyama, Akinori; Matsuda, Takuma; Yokoseki, Takashi; Mitomo, Satoshi; Murata, Koichi; Makino, Takahiro; Onoda, Shinobu; Tanaka, Yuki*; Kandori, Mikio*; Yoshie, Toru*; et al.

Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.134 - 137, 2015/11

Journal Articles

NV centers in diamond used for detection of single ion track

Haruyama, Moriyoshi; Onoda, Shinobu; Kada, Wataru*; Teraji, Tokuyuki*; Isoya, Junichi*; Oshima, Takeshi; Hanaizumi, Osamu*

Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.184 - 187, 2015/11

Journal Articles

Recovery of the electrical characteristics of SiC-MOSFETs irradiated with gamma-rays by thermal treatments

Yokoseki, Takashi; Abe, Hiroshi; Makino, Takahiro; Onoda, Shinobu; Tanaka, Yuki*; Kandori, Mikio*; Yoshie, Toru*; Hijikata, Yasuto*; Oshima, Takeshi

Materials Science Forum, 821-823, p.705 - 708, 2015/07

Journal Articles

Development of diagnostic method for deep levels in semiconductors using charge induced by heavy ion microbeams

Kada, Wataru*; Kambayashi, Yuya*; Iwamoto, Naoya*; Onoda, Shinobu; Makino, Takahiro; Koka, Masashi; Kamiya, Tomihiro; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Kojima, Kazutoshi*; et al.

Nuclear Instruments and Methods in Physics Research B, 348, p.240 - 245, 2015/04

 Times Cited Count:4 Percentile:40.75(Instruments & Instrumentation)

JAEA Reports

Development of microbeam formation and single-ion hit technologies at the TIARA cyclotron

Yokota, Wataru; Sato, Takahiro; Kamiya, Tomihiro; Okumura, Susumu; Kurashima, Satoshi; Miyawaki, Nobumasa; Kashiwagi, Hirotsugu; Yoshida, Kenichi; Funayama, Tomoo; Sakashita, Tetsuya; et al.

JAEA-Technology 2014-018, 103 Pages, 2014/09

JAEA-Technology-2014-018.pdf:123.66MB

The world's first microbeam focusing technology for heavy ions of hundreds MeV accelerated by a cyclotron has been developed at the TIARA facility in the Takasaki Advanced Radiation Research Institute of the Japan Atomic Energy Agency. The technology enables us to form a microbeam of less than 1 $$mu$$m in diameter and to shoot a specified point on a target by one ion (single-ion hit) with spatial accuracy of microbeam size. In the course of the development, a cyclotron technology to accelerate a small energy-spread beam of hundres MeV, which is necessary for focusing to 1 $$mu$$m, has been developed as well as a beam focusing apparatus, beam size measurement and so forth based on the several-MeV microbeam/single-ion hit system of the TIARA electrostatic accelerators. Applicability of the technologies was examined by actual use in irradiation experiment and the result were fed back to them. This paper reports the process and the results of the development over ten years.

Journal Articles

Continuous observation of polarization effects in thin SC-CVD diamond detector designed for heavy ion microbeam measurement

Kada, Wataru*; Iwamoto, Naoya; Sato, Takahiro; Onoda, Shinobu; Grilj, V.*; Skukan, N.*; Koka, Masashi; Oshima, Takeshi; Jak$v{s}$i$'c$, M.*; Kamiya, Tomihiro

Nuclear Instruments and Methods in Physics Research B, 331, p.113 - 116, 2014/07

 Times Cited Count:20 Percentile:88.5(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Radiation-induced currents in 4H-SiC dosimeters for real-time $$gamma$$-ray dose rate monitoring

Fujita, Natsuko; Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi

Materials Science Forum, 778-780, p.1042 - 1045, 2014/02

 Times Cited Count:1 Percentile:60.31

A Silicon Carbide (SiC) dosimeter has been exposed to $$gamma$$-rays emitted from a $$^{60}$$Co source in order to test the response of radiation-induced current in the dose rate ranging from 0.4 Gy/h to 4 kGy/h. The SiC dosimeter in this study is a high purity semi-insulating 4H-SiC with nickel and aluminum electrode. The radiation-induced currents in the dosimeter show a linear relationship with the dose rate, and are repeatable and stable.

Journal Articles

Defect levels in high purity semi-insulating 4H-SiC studied by alpha particle induced charge transient spectroscopy

Iwamoto, Naoya; Onoda, Shinobu; Fujita, Natsuko; Makino, Takahiro; Oshima, Takeshi

Materials Science Forum, 778-780, p.289 - 292, 2014/02

 Times Cited Count:0 Percentile:0.32

JAEA Reports

Development of Self Powered Gamma Detector (SPGD) with lead emitter

Shibata, Akira; Takeuchi, Tomoaki; Otsuka, Noriaki; Saito, Takashi; Onoda, Shinobu; Oshima, Takeshi; Tsuchiya, Kunihiko

JAEA-Technology 2013-043, 24 Pages, 2014/01

JAEA-Technology-2013-043.pdf:2.76MB

The big tsunami wave caused by the Great East Japan Earthquake triggered station black out of the Fukushima Daiichi Nuclear Power Plant. The schedule until ending of the decommission is shown in the guidance from Japanese government. But the dose rate in the reactor vessel is quite high and it is not possible to specify the position of melted fuel debris by visual inspection. That is one of the most important issues in this process. This report describes the development of Self Powered Gamma Detector (SPGD) for the purpose to specify the position of melted fuel debris and situation in the reactor by measuring $$gamma$$ rate in the reactor of the Fukushima Daiichi Nuclear Power Plant. The $$gamma$$ irradiation examinations by changing the parameter of emitters figure were performed and the dependency of SPGD output on emitter shape was summarized.

Journal Articles

Enhanced charge collection by single ion strike in AlGaN/GaN HEMTs

Onoda, Shinobu; Hasuike, Atsushi*; Nabeshima, Yoshiaki*; Sasaki, Hajime*; Yajima, Kotaro*; Sato, Shinichiro; Oshima, Takeshi

IEEE Transactions on Nuclear Science, 60(6), p.4446 - 4450, 2013/12

 Times Cited Count:28 Percentile:93.16(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

Heavy-ion induced anomalous charge collection from 4H-SiC Schottky barrier diodes

Makino, Takahiro; Deki, Manato; Iwamoto, Naoya; Onoda, Shinobu; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Hirao, Toshio*; Oshima, Takeshi

IEEE Transactions on Nuclear Science, 60(4), p.2647 - 2650, 2013/08

 Times Cited Count:10 Percentile:59.34(Engineering, Electrical & Electronic)

Heavy ion induced anomalous charge collection was observed from 4H-SiC Schottky barrier diodes. It is suggested that the incident ion range with suspect to the thickness of the epi-layer of the SBD in key to understanding these observation and the understanding mechanism.

Journal Articles

Focused microbeam irradiation effects in transmission CVD diamond film detectors

Kada, Wataru; Kamiya, Tomihiro; Iwamoto, Naoya; Onoda, Shinobu; Grilj, V.*; Skukan, N.*; Makino, Takahiro; Koka, Masashi; Sato, Takahiro; Jak$v{s}$i$'c$, M.*; et al.

Transactions of the Materials Research Society of Japan, 38(2), p.279 - 282, 2013/07

Diamond is interested by many researchers as an excellent candidate material with advantages in the radiation-hardness. For the time-resolved detection of single-ions with several hundred MeV, transmission E detector using thin film CVD diamond is now under investigation for the futuristic utilization in a microbeam line of the AVF cyclotron at JAEA/Takasaki TIARA facility as replacing materials of the beam extraction window. In this research, a Single Crystalline (SC) 50 m thick CVD diamond film ion detector was fabricated for the investigation of the responses and radiation hardness under the focused ion microbeam irradiation. Transient Ion Beam Induced Current (TIBIC) experiment was executed by single hit irradiation of 15 MeV O$$^{4+}$$ scanning area of 50 $$mu$$m$$^2$$ and the transient signals with time width of several nano-secounds were consecutively recorded by a high speed (15 GHz) Digital Storage Oscilloscope during the irradiation. The decreases in the individual pulse height was observed by increasing the total amount of the ion dose irradiated in the focused area. These changes were recovered in temporal conversion of applied bias voltages thus trend of decrease were able to be controlled by changing bias settings and irradiation conditions during the experiments.

Journal Articles

Effects of radiation-induced defects on the charge collection efficiency of a silicon carbide particle detector

Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi; Kojima, Kazutoshi*; Nozaki, Shinji*

Proceedings of SPIE, Vol.8725 (CD-ROM), 8 Pages, 2013/06

 Times Cited Count:0 Percentile:0.02

Journal Articles

Breakdown voltage in silicon carbide metal-oxide-semiconductor devices induced by ion beams

Oshima, Takeshi; Deki, Manato; Makino, Takahiro; Iwamoto, Naoya; Onoda, Shinobu; Hirao, Toshio*; Kojima, Kazutoshi*; Tomita, Takuro*; Matsuo, Shigeki*; Hashimoto, Shuichi*

AIP Conference Proceedings 1525, p.654 - 658, 2013/04

 Times Cited Count:0 Percentile:0.05

Metal-Oxide-Semiconductor (MOS) capacitors were fabricated on n-type 4H-SiC epitaxial layers, and the leakage current through the gate oxide during heavy ion irradiation was investigated in order to evaluate dielectric breakdown induced by heavy ions (Single Event Gate Rupture: SEGR). The gate oxide at thickness ranges between 60 and 80 nm was formed using pyrogenic oxidation at 1100 $$^{circ}$$C for 60 min. Circular electrodes with 180 $$mu$$ diameter were formed using Al evaporation and a lift-off technique. The leakage current observed through the gate oxide was monitored during 18 MeV oxygen (O) or nickel (Ni) ions. As a result, although no significant difference in the value of the electric field at the dielectric breakdown (around 8.2 MV/cm) was observed between non-irradiated and 18 MeV-O irradiated samples, the value decreased to be 7.3 MV/cm in the case of 18 MeV-Ni ion incidence. The Linier Energy Transfer (LET) for 18 MeV-O is 7 MeV cm$$^{2}$$/mg, and this value is smaller than that for 18 MeV-Ni (24 MeV cm$$^{2}$$/mg). Also, 18 MeV-Ni ions deposit energy in narrower regions than 18 MeV-O ions. Thus, it can be concluded that the high density of charge induced by 18 MeV-Ni ions triggers SEGR in SiC MOS capacitors.

Journal Articles

Transmission charged-particle detectors using CVD diamond thin film for single ion hit measurement

Kada, Wataru; Sato, Takahiro; Makino, Takahiro; Onoda, Shinobu; Koka, Masashi; Oshima, Takeshi; Kamiya, Tomihiro; Grilj, V.*; Skukan, N.*; Jaksic, M.*

KEK Proceedings 2012-8, p.89 - 98, 2012/12

Transmissive particle detectors using thin-film diamond were newly developed for the individual detection of single-hit of heavy ions. Two type of the detectors were developed using poly- and single-crystalline diamond films with thickness of upper 50 $$mu$$m, which could be alternative candidate material of beam-extraction window. The detectors were irradiated at off- and on-line environment using alpha-particle sources and microbeam lines of two tandem accelerators placed at TARRI, JAEA and RBI. From point of view in the response of energy spectrum and detection efficiency, it was experimentally examined that the thin-film of single-crystalline diamond was well respond to the irradiation of single ions with energy of several MeV.

Journal Articles

Microbeam irradiation effects on transmission diamond detector

Kada, Wataru; Sato, Takahiro; Iwamoto, Naoya; Onoda, Shinobu; Grilj, V.*; Skukan, N.*; Makino, Takahiro; Koka, Masashi; Jak$v{s}$i$'c$, M.*; Oshima, Takeshi; et al.

Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.70 - 73, 2012/12

Thin film CVD diamond detector is now under investigation for the utilization as a transmission detector for ionized particle in single-ion-hit by replacing materials of the beam extraction window in a microbeam line of the AVF cyclotron at JAEA/Takasaki. In this research, a spectroscopy-grade 50 $$mu$$m thick-film Single Crystalline (SC) CVD diamond detector with size of 4.6 mm $$times$$ 4.6 mm was characterized using Ion Beam Induced Charge (IBIC) and Transient Ion Beam Induced Current (TIBIC) systems. The detector was irradiated with 1-3 MeV H$$^{+}$$ and 15 MeV O$$^{4+}$$ microbeams. Significant decrease of pulse height of IBIC signals was observed at 15 MeV O$$^{4+}$$ irradiation, however, this peak degradation easily recovered in a short time by release of bias voltages. This temporal degradation effect was enhanced in areas damaged by previous ion irradiation. Therefore, the temporal peak degradation seems to be caused by the polarization effect due to charge captured by defects in diamond or/and at the surface.

320 (Records 1-20 displayed on this page)