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Toyoshima, Hiroaki*; Hiraga, Kenta*; Ono, Shinya*; Tanaka, Masatoshi*; Ozawa, Kenichi*; Mase, Kazuhiko*; Hirao, Norie; Sekiguchi, Tetsuhiro; Shimoyama, Iwao; Baba, Yuji
Photon Factory Activity Report 2011, Part B, P. 102, 2012/00
The knowledge of the interaction between organic molecules and semiconductor surfaces plays an important role in adapting organic semiconductors into the semiconductor technology. In the present study, the process of 
-sexithiophene (-6T) thin layer formation on passivated silicon (Si) surfaces has been investigated in-situ by means of PES, angle-depended NEXAFS (near-edge X-ray absorption fine-structure), SDRS, and RDS. For water-adsorbed Si(001), it was found that the majority of -6T molecules are standing on the substrate. Above 3 nm, most of molecules are standing and constitute well ordered islands or films. For ethylene adsorbed Si(001) on the contrary, some of -6T molecules are flat-lying, resulting in less prominent orientation. Thus, the orientation of molecules depends on the method of passivation, which opens the possibility of controlling the molecular orientation by the surface modification.
Matsukawa, Makoto; Miura, Yushi; Terakado, Tsunehisa; Kimura, Toyoaki; Oshima, Iwao*; Kawashima, Shuichi*
Proceedings of International Symposium on Discharges and Electrical Insulation in Vacuum (ISDEIV 2000), 2, p.415 - 418, 2000/00
no abstracts in English
-sexithiophene thin films grown on semiconductor surface studied by near-edge X-ray absorption fine structureHiraga, Kenta*; Toyoshima, Hiroaki*; Nakajima, Junki*; Tanaka, Hiroya*; Ono, Shinya*; Tanaka, Masatoshi*; Sekiguchi, Tetsuhiro; Hirao, Norie; Shimoyama, Iwao; Baba, Yuji
no journal, ,
It is important to investigate structure of organic thin films grown on semiconductor surfaces for fabrication of the organic semiconductors.
-sexithiophene ultra-thin films on passivated Si(001) surfacesHiraga, Kenta*; Toyoshima, Hiroaki*; Ono, Shinya*; Hirao, Norie; Sekiguchi, Tetsuhiro; Shimoyama, Iwao; Baba, Yuji; Mukai, Kozo*; Yoshinobu, Jun*; Tanaka, Masatoshi*
no journal, ,
It is important to control orientation structure and electric property at the interface between organic semiconductor molecule and surfaces of semiconductor substrates in order for the development of commercial base organic transistors and solar cells. In the present work, we have investigated the surface reflection spectroscopy (RDS, SRDS), S-1s angle resolved near-edge X-ray absorption fine-structure (NEXAFS), and UPS for -sexithiophene (-6T) ultra-thin films with a variety of thickness from 0.25 to 1.0 nm. The results of RDS and SDRS, and NEXAFS gave the information on orientation structure of the -6T molecules. In contrast, UPS gave the uniformity of the thin films. We report on how orientation structures and condensed structures are changed depending on the method of passivation and the film thickness.