Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Initialising ...
Np and 
Am gamma ray regions福田 竜生; 小畠 雅明; 菖蒲 敬久; 吉井 賢資; 神谷 潤一郎; 岩元 洋介; 牧野 高紘*; 山崎 雄一*; 大島 武*; 白井 康裕*; et al.
Journal of Applied Physics, 132(24), p.245102_1 - 245102_8, 2022/12
被引用回数：0 パーセンタイル：0(Physics, Applied)Ni/SiCショットキー接合による放射線から電気エネルギーへの変換を、特にAm (30keV)及びAm (60keV)の
線に着目して調べた。変換効率は吸収量ベースで最大1.6%であった。SiCは比較的放射線耐性があることから、これは放射性廃棄物からの線エネルギーの再生に利用できる可能性を示している。また、高X線光電子分光(HAXPES)及び二次イオン質量分析法(SIMS)を組み合わせることで、接合界面にNi-Si化合物が生成されると効率が低下することも分かった。これは電気測定に加えてHAXPES及びSIMSの2つの手法を組み合わせて判明したことであり、今後のデバイス作成プロセスへのフィードバックが期待できる結果である。
圓谷 志郎*; 佐藤 真一郎*; 本田 充紀; 鈴木 千尋*; 田口 富嗣*; 山本 春也*; 大島 武*
Radiation Physics and Chemistry, 199, p.110369_1 - 110369_7, 2022/10
被引用回数：1 パーセンタイル：49.42(Chemistry, Physical)SiへのNiイオンビーム照射によるNiシリサイド合成は、局所構造の形成が可能、イオンビームの制御が可能、熱処理なしでシリサイドが形成可能、得られる試料の再現性が高い、などの利点から注目されている。本研究では、3.0MeVのNi
イオンを注入したSiの局所的な原子構造を調査した。Ni K吸収端蛍光収量拡張X線吸収微細構造解析の結果、Ni原子は照射初期に金属的な面心立方NiとNiSi
相の混合構造を持っており、イオン照射量が10
個・cm Si以上になるとNiSiの形成が著しく促進することが明らかになった。構造転移のイオン照射量とSiアモルファス化臨界量(7.1
10
ions・cm)の一致から、Ni照射SiにおけるNiSi相の合成にはSiのアモルファス化が重要であると結論づけた。
大政 義典*; 高木 茂幸*; 戸嶋 健人*; 横山 凱乙*; 遠藤 亘*; 折茂 慎一*; 齋藤 寛之*; 山田 武*; 川北 至信; 池田 一貴*; et al.
Physical Review Research (Internet), 4(3), p.033215_1 - 033215_9, 2022/09
Quasielastic neutron scattering (QENS) and neutron powder diffraction of the complex transition metalhydrides Li
MoH
and Li
NbH were measured in a temperature range of 10-300 K to study their structures and dynamics, especially the dynamics of the hydrogen atoms. These hydrides contain unusual ninefold H coordinated complex ions (MoH
or NbH
) and hydride ions (H
). A QENS signal appeared 
150 K due to the relaxation of H atoms. The intermediate scattering functions derived from the QENS spectra are well fitted by a stretched exponential function called the Kohlrausch-Williams-Watts functions with a small stretching exponent 
0.3-0.4, suggesting a wide relaxation time distribution. The 
dependence of the elastic incoherent structure factor is reproduced by the rotational diffusion of MH
(M = Mo or Nb) anions. The results are well supported by a van Hove analysis for the motion of H atoms obtained using first-principles molecular dynamics calculations. We conclude that the wide relaxation time distribution of the MH rotation is due to the positional disorder of the surrounding Li ions and a unique rotation with MH anion deformation (pseudorotation).
本島 貴之*; 小池 真史*; 萩原 健司*; 青柳 和平
第46回岩盤力学に関するシンポジウム講演集(CD-ROM), p.208 - 213, 2019/01
大深度立坑掘削の標準工法であるショートステップ工法は、地山を緩ませずに断面を確保できる優れた工法である。ただし、国内に広く分布する堆積岩中への立坑構築を見据えた場合、特に低岩盤強度、初期地圧の異方性、もしくは高地圧といった不利な条件がある場合には覆工コンクリート応力が過大となることが想定される。本研究では支保への応力低減を目的としてショートステップ工法に二重支保・遅れ覆工の考え方を導入し、同手法の成立性について三次元逐次掘削解析にて検討を行うことで有効性を確認した。検証解析は日本原子力研究開発機構が実施している幌延深地層研究計画での原位置観測データを利用し、深度とともに地圧が増加するのに対し、岩盤強度が横ばいとなる厳しい条件下で実施した。
岩本 直也*; Azarov, A.*; 大島 武; Moe, A. M. M.*; Svensson, B. G.*
Materials Science Forum, 858, p.357 - 360, 2016/05
Thermal stability of deep level defects in high purity semi-insulating (HPSI) 4H-Silicon Carbide (SiC) substrates was studied. The samples were annealed from 700 to 1700 
C, and Schottky barrier diodes (SBDs) were fabricated on the samples. The SBDs were characterized by current-voltage, capacitance-voltage and admittance spectroscopy measurements. The forward current of SBDs increased substantially with the increase of annealing temperature, while the reverse leakage current remained below 10
A. The capacitance of the samples annealed at 1400 and 1500 C was essentially zero at bias voltages between 0 and 10 V, but after 1600 and 1700 C annealing, the capacitance increased and started to respond to the bias voltage. The net hole concentrations in the 1600 and 1700 C annealed substrates were estimated to be 0.5
110 and 1410 /cm
, respectively. From admittance spectroscopy, five defect levels were detected. Defect peaks relating to boron acceptors increased although defect peaks with deep levels decreased with increasing annealing temperature. Therefore, it can be concluded that deep levels which act as compensation centers for boron acceptors dissociate by high temperature annealing, and as a results, hole concentration increases.
Lohrmann, A.*; Castelletto, S.*; Klein, J. R.*; 大島 武; Bosi, M.*; Negri, M.*; Lau, D. W. M.*; Gibson, B. C.*; Prawer, S.*; McCallum, J. C.*; et al.
Applied Physics Letters, 108(2), p.021107_1 - 021107_4, 2016/01
被引用回数：35 パーセンタイル：82.4(Physics, Applied)Creation and characterisation of single photon emitters near the surface of 4H- and 6H-silicon carbide bulk substrates and 3C-SiC epitaxially grown on silicon substrates were investigated. These single photon emitters can be created and stabilized by thermal annealing in an oxygen atmosphere at temperatures above 550 C. Hydrofluoric acid (HF) treatment is shown to effectively annihilate the emission from defects and to restore an optically clean surface. However, the emission from the defects can be obtained after re-oxidation above 550 C. By measuring using standard confocal microscopy techniques, the excited state lifetimes for the emitters are found to be in the nanosecond regime in all three polytypes, and the emission dipoles are aligned with the lattice.
大島 武; 横関 貴史; 村田 航一; 松田 拓磨; 三友 啓; 阿部 浩之; 牧野 高紘; 小野田 忍; 土方 泰斗*; 田中 雄季*; et al.
Japanese Journal of Applied Physics, 55(1S), p.01AD01_1 - 01AD01_4, 2016/01
被引用回数：12 パーセンタイル：51.67(Physics, Applied)In this study, we report the effects of -ray irradiation and subsequent annealing on the electrical characteristics of vertical structure power 4H Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with the blocking voltage of 1200 V. The MOSFETs were irradiated with -rays up to 1.2 MGy in a N atmosphere at room temperature (RT). During the irradiation, no bias was applied to each electrode of the MOSFETs. After the irradiation, the MOSFETs were kept at RT for 240 h to investigate the stability of their degraded characteristics. Then, the irradiated MOSFETs were annealed up to 360 C in the atmosphere. The current-voltage (I-V) characteristics of the MOSFETs were measured at RT. By 1.2 MGy irradiation, the shift of threshold voltage (V
) for the MOSFETs was -3.39 V. After RT preservation for 240 h, MOSFETs showed no significant recovery in V. By annealing up to 360 C, the MOSFETs showed remarkable recovery, and the values of V become 91 % of the initial values. Those results indicate that the degraded characteristics of SiC MOSFETs can be recovered by thermal annealing at 360 C.
阿部 浩之; 徳平 真之介*; 内田 裕久*; 大島 武
Nuclear Instruments and Methods in Physics Research B, 365(Part A), p.214 - 217, 2015/12
ニッケル水素電池の負極材として広く使用されている水素吸蔵合金LaNi
Al
に対して、keVからMeVオーダー領域での重イオン照射を行い表面改質を図った。これまでに、水素吸蔵合金に対してイオン照射することで水素吸蔵能が向上すること、表面付近に形成された酸化被膜等により吸蔵能が影響されることを明らかにしている。そこで今回は、酸素イオンを選択し、試料表面付近に酸素注入できるkeVから内部まで侵入させることのできるMeVオーダーまでのエネルギーで、110
cm
までのフルエンスを照射した。その結果、酸素イオン照射した試料は水素吸蔵初期反応速度が未照射に比べ数倍向上すること、表面付近に酸素を導入できるkeVオーダーの照射はMeVオーダーの照射に比べて水素吸蔵初期反応速度の向上に有用であることが判明した。
小野田 忍; 春山 盛善; 寺地 徳之*; 磯谷 順一*; 加田 渉*; 花泉 修*; 大島 武
Physica Status Solidi (A), 212(11), p.2641 - 2644, 2015/11
被引用回数：10 パーセンタイル：40.19(Materials Science, Multidisciplinary)Nitrogen-vacancy (NV) center in diamond is a luminescent point defect with applications of quantum computation and atomic scale sensors. One of the most important features of NV center is high emission rate. This enables single NV centers to be detected using a confocal laser scanning microscope. In this study, we propose a new application of NV centers as a single ion track detector. We perform 490 MeV Os ion irradiation to diamond grown by chemical vapor deposition (CVD) technique. After high temperature annealing at 1000 C, the ion track is able to be visualized by using confocal laser scanning microscope. In short, we have successfully detected ion track in diamonds.
Kraus, H.; Simin, D.*; Fuchs, F.*; 小野田 忍; 牧野 高紘; Dyakonov, V.*; 大島 武
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.176 - 179, 2015/11
Quantum centers in silicon carbide (SiC) have already transcended their former reputation as mere performance-hampering defects. Especially the silicon vacancies, but also other point defects offer a variety of quantum applications, completing and complementing the successful NV centers in diamond. We aim to provide an overview over the research activities on quantum centers in silicon carbide, from fundamental knowledge on the 3/2 spin multiplicity, over microwave emission and single photon sources, to axis-aware magnetic field sensing and temperature sensing. Finally, we discussed creating tailored defects in SiC using different radiation parameters.
柴田 優一*; 今泉 充*; 佐藤 真一郎; 大島 武; 大岡 幸代*; 高本 達也*
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.65 - 68, 2015/11
次期の高効率薄膜宇宙用太陽電池として逆積み格子不整合型(IMM)三接合太陽電池の開発が進められている。最近、IMM三接合太陽電池に関して、放射線により劣化した特性が光照射により回復する現象が見いだされたが、その詳細は明らかになっていない。そこで、1MeV電子線を310 e/cm
照射することで劣化させたIMM三接合太陽電池の光照射回復現象を調べた。その結果、3時間の光照射(AM0、1sun)によって開放電圧が43mV回復することが判明した。また、太陽電池中に残留する欠陥について調べるためにエレクトロルミネセンス測定したところ、InGaP, GaAs, InGaAsの三層のうち、InGaPトップセルのエレクトロルミネセンス強度が光照射後に増加していることがわかった。このことから、光照射による回復は、InGaPトップセル中の欠陥が回復したことに起因することが明らかとなった。
中村 徹哉*; 今泉 充*; 佐藤 真一郎; 菅谷 武芳*; 望月 透*; 岡野 好伸*; 大島 武
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.73 - 76, 2015/11
量子ドット太陽電池の放射線劣化メカニズムの解明を目指し、ガリウムひ素(GaAs)半導体中に量子ドットを含むi層を導入したpin太陽電池の放射線照射効果に関する研究を推進している。これまでに、量子ドット太陽電池は放射線照射により曲線因子(FF)が大きく劣化することを報告しているが、今回は、そのメカニズムを明らかにするために、低エネルギー陽子線照射によって生成する電流(イオンビーム誘起電流: IBIC)を測定し、空乏化している量子ドット層内での少数キャリアの振る舞いを調べた。陽子線のエネルギーは量子ドット層に損傷が導入されるような条件とし、結晶損傷が蓄積されることで生成電流がどのように減少していくかを観察した。その結果、陽子線照射によって量子ドット層内に蓄積した欠陥に起因するキャリア収集効率の低下がFF劣化の主要因であることが明らかとなった。
土方 泰斗*; 三友 啓*; 松田 拓磨*; 村田 航一*; 横関 貴史*; 牧野 高紘; 武山 昭憲; 小野田 忍; 大久保 秀一*; 田中 雄季*; et al.
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.130 - 133, 2015/11
In order to develop semiconductor devices with MGy radiation resistivity, we are developing power metal-oxide-semiconductor field-effect-transistors (MOSFETs) based on silicon carbide (SiC) semiconductors. The -ray irradiation responses of power SiC-MOSFETs were studied under various irradiation temperatures and humidity with various gate-bias conditions. Making comparisons between these responses, the optimum device operating condition and a better device structure were derived and MGy resistivity was achieved. Besides, -ray irradiation tests for a motor-driver circuits consisting of SiC-MOSFETs were carried out, and as a result, their continuous operation up to 2 MGy was confirmed.
武山 昭憲; 松田 拓磨; 横関 貴史; 三友 啓; 村田 航一; 牧野 高紘; 小野田 忍; 田中 雄季*; 神取 幹郎*; 吉江 徹*; et al.
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.134 - 137, 2015/11
Influence of -ray irradiation under high temperature and high humidity circumstance on the electrical characteristics of Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) was investigated. The drain current (I
)-gate voltage (V
) curves shifted to the negative voltage side and no significant further shift was observed with increasing the dose above 10 kGy. Suppression of the negative shift of threshold voltage (V
) means that positive charges generated by irradiation were thermally annealed by elevated temperature during irradiation. The leakage current slightly increased at 5 and 10 kGy, however, those values recovered to be approximately the initial value above 40 kGy. Humidity circumstance attributed to remarkable suppression of the leakage current in comparison with dry circumstance.
春山 盛善; 小野田 忍; 加田 渉*; 寺地 徳之*; 磯谷 順一*; 大島 武; 花泉 修*
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.184 - 187, 2015/11
We propose that diamond can be utilized as a new Fluorescent Nuclear Track Detector (FNTD) material. For this aim, we focus on Nitrogen Vacancy (NV) centers in diamond. One of the most important features of a NV center is a high emission rate, which enable us to observe single NV center. After high energy ion irradiation and subsequent annealing, we successfully observe Os ion tracks in various diamonds containing dense nitrogen impurity. However, Os ion track cannot be observed from diamond without nitrogen impurity. We found that the optimization of nitrogen impurity is a key issue for developing high sensitive FNTD based on diamond.
阿部 浩之; 下村 拓也; 徳平 真之介*; 島田 幸洋*; 竹仲 佑介*; 古山 雄太*; 西村 昭彦; 内田 裕久*; 大道 博行; 大島 武
Proceedings of 7th International Congress on Laser Advanced Materials Processing (LAMP 2015) (Internet), 4 Pages, 2015/08
短パルスレーザー(ナノ秒,フェムト秒)を水素吸蔵合金表面層に照射し、水素吸蔵能向上を目指す表面改質実験を行った。レーザー条件をパルス幅100fsec、エネルギー0.2-3.4mJ/pulseとして、水素吸蔵合金LaNiAl合金に照射することで表面の局所構造を変化させ、この吸蔵合金の初期水素吸蔵反応とレーザー照射との相関について調べた。その結果、フルエンスで2.0mJ/cm
付近でのレーザー照射したサンプルは未照射サンプルに比べ、1.5-3.0倍水素吸蔵初期反応速度が速くなり水素吸蔵能が向上することを見いだした。これによりレーザー照射は水素吸蔵材料の表面改質に有効であると結論づけられる。
岩本 直也*; Azarov, A.*; 大島 武; Moe, A. M. M.*; Svensson, B. G.*
Journal of Applied Physics, 118(4), p.045705_1 - 045705_8, 2015/07
被引用回数：6 パーセンタイル：28.05(Physics, Applied)Influence of high-temperature annealing on deep-level defects in a high-purity semi-insulating hexagonal (4H) silicon carbide (SiC) substrates was studied. From secondary ion mass spectrometry, it was found that the substrates contained boron (B) with concentration in the mid 10 /cm range while other impurities including nitrogen, aluminum, titanium, vanadium and chromium were below their detection limits. Schottky barrier diodes (SBDs) were fabricated on substrates annealed at 14001700 C. The series resistance of the SBDs decreased with increasing annealing temperature. Admittance spectroscopy results showed the presence of shallow B acceptors and deep-level defects. By 1400 C annealing, the B acceptors were still compensated by deep-level defects. However, the concentration of deep-level defects decreased with increasing annealing temperature above 1400 C. Therefore, the decreases in series resistance due to high temperature annealing can be interpreted in terms of annealing of deep-level defects which act as compensation centers for B acceptors.
横関 貴史; 阿部 浩之; 牧野 高紘; 小野田 忍; 田中 雄季*; 神取 幹郎*; 吉江 徹*; 土方 泰斗*; 大島 武
Materials Science Forum, 821-823, p.705 - 708, 2015/07
Since silicon carbide (SiC) has high radiation resistance, it is expected to be applied to electronic devices used in harsh radiation environments, such as nuclear facilities. Especially, extremely high radiation resistant devices (MGy order) are required for decommissioning of TEPCO Fukushima Daiichi nuclear reactors. The development of radiation resistant devices based on Metal-Oxide-Semiconductor (MOS) FETs is important since MOSFETs can easily realize normally-off and low-loss power devices. In this study, we irradiated vertical power 4H-SiC MOSFETs with gamma-rays up to 1.2 MGy, and investigated the recovery of their degraded characteristics due to thermal annealing up to 360 C. The drain current (I) - gate voltage (V) curves of SiC MOSFETs shift to the negative voltage side and the leakage of I increased by irradiation at 1.2 MGy. After the irradiation, the MOSFETs were kept at RT for 240 h. By the RT-annealing, no significant change in the degraded electrical characteristics of SiC MOSFETs was observed. The degraded characteristics of SiC MOSFETs began to recover by annealing above 120 C, and their characteristics reach almost the initial ones by annealing at 360 C.
Lohrmann, A.*; 岩本 直也*; Bodrog, Z.*; Castelletto, S.*; 大島 武; Karle, T. J.*; Gali, A.*; Prawer, S.*; McCallum, J. C.*; Johnson, B. C.*
Nature Communications (Internet), 6, p.7783_1 - 7783_7, 2015/07
被引用回数：136 パーセンタイル：96.88(Multidisciplinary Sciences)A new single photon source (SPS) was found in hexagonal silicon carbide (SiC), and the luminescence from the SPS could be controlled by the operation of the pn diode. The SPS showed electro-luminescence (EL) with spectra between 700 and 850 nm (zero phonon line: 745 nm) and the EL could be easily observed at even room temperature (RT). Also, the SPS has very high thermal stability and can be observed even after 1800 C annealing. The luminescence from the SPS was also observed by photo-luminescence measurements at RT. From Ab initio calculation, it was proposed that the silicon antisite defects beneath cubic SiC inclusion are a reasonable structure for the SPS although the identification of the SPS has not yet done.
S郷 慎太郎*; 井手口 栄治*; 横山 輪*; 小林 幹*; 木佐森 慶一*; 高木 基伸*; 宮 裕之*; 大田 晋輔*; 道正 新一郎*; 下浦 享*; et al.
JPS Conference Proceedings (Internet), 6, p.030005_1 - 030005_4, 2015/06
The high-spin states in S were investigated at Tandem-ALTO facility in Institut de Physique Nucl
aire d'Orsay The 
Mg(
O, 2
1n)S fusion evaporation reaction was used to populate high-spin states in S. The germanium -ray detector array ORGAM was employed to measure rays from high-spin states and charged particles evaporated from the compound nuclei were detected by a segmented silicon detector, Si-Ball. A level scheme for S was deduced based on the gamma-gamma-coincidence analysis and -ray angular correlation analysis. The half-life of the transition in the superdeformed band was estimated by measuring the residual Doppler shift. The deduced half-life shows the large collectivity of the band.
