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Journal Articles

Direct energy conversion using Ni/SiC Schottky junction in $$^{237}$$Np and $$^{241}$$Am gamma ray regions

Fukuda, Tatsuo; Kobata, Masaaki; Shobu, Takahisa; Yoshii, Kenji; Kamiya, Junichiro; Iwamoto, Yosuke; Makino, Takahiro*; Yamazaki, Yuichi*; Oshima, Takeshi*; Shirai, Yasuhiro*; et al.

Journal of Applied Physics, 132(24), p.245102_1 - 245102_8, 2022/12

 Times Cited Count:0 Percentile:20.89(Physics, Applied)

Direct energy conversion has been investigated using Ni/SiC Schottky junctions with the irradiation of monochromatized synchrotron X-rays simulating the gamma rays of $$^{237}$$Np (30 keV) and $$^{241}$$Am (60 keV). From current-voltage measurements, electrical energies were obtained for both kinds of gamma rays. The energy conversion efficiencies were found to reach up to $$sim$$1.6%, which is comparable to those of a few other semiconducting systems reported thus far. This result shows a possibility of energy recovery from nuclear wastes using the present system, judging from the radiation tolerant nature of SiC. Also, we found different conversion efficiencies between the two samples. This could be understandable from hard X-ray photoelectron spectroscopy and secondary ion mass spectroscopy measurements, suggesting the formation of Ni-Si compounds at the interface in the sample with a poor performance. Hence, such combined measurements are useful to provide information that cannot be obtained by electrical measurements alone.

Journal Articles

Structural analysis of high-energy implanted Ni atoms into Si(100) by X-ray absorption fine structure spectroscopy

Entani, Shiro*; Sato, Shinichiro*; Honda, Mitsunori; Suzuki, Chihiro*; Taguchi, Tomitsugu*; Yamamoto, Shunya*; Oshima, Takeshi*

Radiation Physics and Chemistry, 199, p.110369_1 - 110369_7, 2022/10

 Times Cited Count:1 Percentile:35.78(Chemistry, Physical)

Ni silicide synthesis by Ni ion beam irradiation into Si attracts attention due to its advantages including the ability of formation of local structures, the controllability of ion beams, the formability of silicide without heat treatment and the high reproducibility of the resulting specimen. In this work, we investigate the local atomic structure of Si implanted with 3.0 MeV Ni$$^{+}$$ ions. Analysis of Ni K-edge fluorescent-yield extended X-ray absorption fine structure reveals that Ni atoms have mixed structure of metallic-like face-centered cubic Ni and NiSi$$_{2}$$ phases at the initial stage of the irradiation and the formation of NiSi$$_{2}$$ promotes significantly with the ion fluence above 10 $$^{15}$$ ions cm$$^{-2}$$. With consideration of the agreement between the ion fluence threshold for the structural transition and the critical Si-amorphization fluence, it is concluded that the amorphization of Si plays an important role in the synthesis of the NiSi$$_{2}$$ phase in Ni$$^{+}$$-irradiated Si.

Journal Articles

Rotation of complex ions with ninefold hydrogen coordination studied by quasielastic neutron scattering and first-principles molecular dynamics calculations

Omasa, Yoshinori*; Takagi, Shigeyuki*; Toshima, Kento*; Yokoyama, Kaito*; Endo, Wataru*; Orimo, Shinichi*; Saito, Hiroyuki*; Yamada, Takeshi*; Kawakita, Yukinobu; Ikeda, Kazutaka*; et al.

Physical Review Research (Internet), 4(3), p.033215_1 - 033215_9, 2022/09

Journal Articles

A Study on support design for deep shaft sinking in rock masses of low strength and anisotropic initial stress

Motoshima, Takayuki*; Koike, Masashi*; Hagihara, Takeshi*; Aoyagi, Kazuhei

Dai-46-Kai Gamban Rikigaku Ni Kansuru Shimpojiumu Koenshu (CD-ROM), p.208 - 213, 2019/01

The short step construction method is the standard construction method for deep shaft excavation. However, considering the shaft construction in the sedimentary rock widely distributed in Japan, the support concrete stress can become excessive especially when there are bad conditions such as low rock strength, anisotropic initial stress, or high ground pressure. In this research, we introduced the dual support design to the short step construction method in order to reduce the support stress, and confirmed the validity by three dimensional numerical analysis. Validation analysis was conducted using the in-situ data in the Horonobe Underground Research Project conducted by Japan Atomic Energy Agency.

Journal Articles

Thermal stability of deep-level defects in high-purity semi-insulating 4H-SiC substrate studied by admittance spectroscopy

Iwamoto, Naoya*; Azarov, A.*; Oshima, Takeshi; Moe, A. M. M.*; Svensson, B. G.*

Materials Science Forum, 858, p.357 - 360, 2016/05

Journal Articles

Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation

Lohrmann, A.*; Castelletto, S.*; Klein, J. R.*; Oshima, Takeshi; Bosi, M.*; Negri, M.*; Lau, D. W. M.*; Gibson, B. C.*; Prawer, S.*; McCallum, J. C.*; et al.

Applied Physics Letters, 108(2), p.021107_1 - 021107_4, 2016/01

 Times Cited Count:35 Percentile:83.21(Physics, Applied)

Journal Articles

Radiation response of silicon carbide metal-oxide-semiconductor transistors in high dose region

Oshima, Takeshi; Yokoseki, Takashi; Murata, Koichi; Matsuda, Takuma; Mitomo, Satoshi; Abe, Hiroshi; Makino, Takahiro; Onoda, Shinobu; Hijikata, Yasuto*; Tanaka, Yuki*; et al.

Japanese Journal of Applied Physics, 55(1S), p.01AD01_1 - 01AD01_4, 2016/01

 Times Cited Count:12 Percentile:50.51(Physics, Applied)

Journal Articles

Surface modifications of hydrogen storage alloy by heavy ion beams with keV to MeV irradiation energies

Abe, Hiroshi; Tokuhira, Shinnosuke*; Uchida, Hirohisa*; Oshima, Takeshi

Nuclear Instruments and Methods in Physics Research B, 365(Part A), p.214 - 217, 2015/12

no abstracts in English

Journal Articles

New application of NV centers in CVD diamonds as a fluorescent nuclear track detector

Onoda, Shinobu; Haruyama, Moriyoshi; Teraji, Tokuyuki*; Isoya, Junichi*; Kada, Wataru*; Hanaizumi, Osamu*; Oshima, Takeshi

Physica Status Solidi (A), 212(11), p.2641 - 2644, 2015/11

 Times Cited Count:10 Percentile:45.34(Materials Science, Multidisciplinary)

Journal Articles

Defect engineering in silicon carbide; Single photon sources, quantum sensors and RF emitters

Kraus, H.; Simin, D.*; Fuchs, F.*; Onoda, Shinobu; Makino, Takahiro; Dyakonov, V.*; Oshima, Takeshi

Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.176 - 179, 2015/11

Journal Articles

Recovery of radiation degradation on inverted metamorphic triple-junction solar cells by light soaking

Shibata, Yuichi*; Imaizumi, Mitsuru*; Sato, Shinichiro; Oshima, Takeshi; Ooka, Sachiyo*; Takamoto, Tatsuya*

Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.65 - 68, 2015/11

Radiation response is one of the important properties for space solar cells. It should be well understood so as to accurately predict their degradation in orbit and also to improve their radiation tolerance. Recently, a phenomenon, recovery from the radiation degradation by light soaking, on inverted metamorphic (IMM) triple-junction (3J) solar cells was found out. In this work, the light soaking annealing effects on electron irradiated IMM 3J solar cells are reported. IMM 3J solar cells irradiated with 1 MeV electrons with the fluence of 3$$times$$10$$^{15}$$ e$$^-$$/cm$$^2$$ showed the recovery of open-circuit voltage, Voc, up to 43 mV after light (AM0, 1 sun) soaking of 3 hours. The increment of the electroluminescence intensity for InGaP in the IMM 3J cells due to the light soaking suggests that the Voc recovery occurs in InGaP top-cell rather than GaAs middle-cell or InGaAs bottom-cell.

Journal Articles

Measurement of ion beam induced current in quantum dot solar cells

Nakamura, Tetsuya*; Imaizumi, Mitsuru*; Sato, Shinichiro; Sugaya, Takeyoshi*; Mochizuki, Toru*; Okano, Yoshinobu*; Oshima, Takeshi

Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.73 - 76, 2015/11

The radiation effect on GaAs p-i-n solar cells with quantum dot (QD) in the i-layer was investigated. In a previous work, we particularly noted the degradation of fill-factor (FF) for the QD cells. In this work, to clarify the reason of the FF degradation in QD cells, generation current due to low-energy proton irradiation, which we call ion beam induced current (IBIC), was observed to characterize behavior of the generated minority carrier by the protons in the depletion region where QDs are located. The energy of protons was adjusted to damage the depletion region, and decrease of generation current was measured during the proton irradiation. The results suggest that the serious degradation of FF is caused by a decrease of the carrier collection efficiency in the depletion region due to proton damage.

Journal Articles

A Development of super radiation-hardened power electronics using silicon carbide semiconductors; Toward MGy-class radiation resistivity

Hijikata, Yasuto*; Mitomo, Satoshi*; Matsuda, Takuma*; Murata, Koichi*; Yokoseki, Takashi*; Makino, Takahiro; Takeyama, Akinori; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; et al.

Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.130 - 133, 2015/11

Journal Articles

Effect of humidity and temperature on the radiation response of SiC MOSFETs

Takeyama, Akinori; Matsuda, Takuma; Yokoseki, Takashi; Mitomo, Satoshi; Murata, Koichi; Makino, Takahiro; Onoda, Shinobu; Tanaka, Yuki*; Kandori, Mikio*; Yoshie, Toru*; et al.

Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.134 - 137, 2015/11

Journal Articles

NV centers in diamond used for detection of single ion track

Haruyama, Moriyoshi; Onoda, Shinobu; Kada, Wataru*; Teraji, Tokuyuki*; Isoya, Junichi*; Oshima, Takeshi; Hanaizumi, Osamu*

Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.184 - 187, 2015/11

Journal Articles

Surface modification effects on hydrogen absorption property of a hydrogen storage alloy by short pulse laser irradiation

Abe, Hiroshi; Shimomura, Takuya; Tokuhira, Shinnosuke*; Shimada, Yukihiro*; Takenaka, Yusuke*; Furuyama, Yuta*; Nishimura, Akihiko; Uchida, Hirohisa*; Daido, Hiroyuki; Oshima, Takeshi

Proceedings of 7th International Congress on Laser Advanced Materials Processing (LAMP 2015) (Internet), 4 Pages, 2015/08

A short pulse laser (the nanosecond and femtosecond) was applied to hydrogen absorbing alloys surface layer, and a surface modification experiment was put into effective to aim at improvement of hydrogen adsorption functionally. It was investigated about correlation between an initial hydrogen absorption reaction rate of hydrogen alloys and a laser irradiation in this research. The laser irradiation condition was done with pulse width 100 fsec and energy 0.2 - 3.4 mJ/pulse. It blazed down on hydrogen absorbing alloys (LaNi$$_{4.6}$$Al$$_{0.4}$$) and changed local order in the surface. As a result, the initial hydrogen absorption reaction rate was 1.5 - 3.0 times as fast as a irradiated sample, and the result and laser irradiated sample found out that a hydrogen absorption function improves. A laser irradiation can conclude to be effective in surface modification of the hydrogen storage materials.

Journal Articles

High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

Iwamoto, Naoya*; Azarov, A.*; Oshima, Takeshi; Moe, A. M. M.*; Svensson, B. G.*

Journal of Applied Physics, 118(4), p.045705_1 - 045705_8, 2015/07

 Times Cited Count:6 Percentile:27.36(Physics, Applied)

Journal Articles

Recovery of the electrical characteristics of SiC-MOSFETs irradiated with gamma-rays by thermal treatments

Yokoseki, Takashi; Abe, Hiroshi; Makino, Takahiro; Onoda, Shinobu; Tanaka, Yuki*; Kandori, Mikio*; Yoshie, Toru*; Hijikata, Yasuto*; Oshima, Takeshi

Materials Science Forum, 821-823, p.705 - 708, 2015/07

Journal Articles

Single-photon emitting diode in silicon carbide

Lohrmann, A.*; Iwamoto, Naoya*; Bodrog, Z.*; Castelletto, S.*; Oshima, Takeshi; Karle, T. J.*; Gali, A.*; Prawer, S.*; McCallum, J. C.*; Johnson, B. C.*

Nature Communications (Internet), 6, p.7783_1 - 7783_7, 2015/07

 Times Cited Count:136 Percentile:96.9(Multidisciplinary Sciences)

Journal Articles

Superdeformation in $$^{35}$$S

Go, Shintaro*; Ideguchi, Eiji*; Yokoyama, Rin*; Kobayashi, Motoki*; Kisamori, Keiichi*; Takaki, Motonobu*; Miya, Hiroyuki*; Ota, Shinsuke*; Michimasa, Shinichiro*; Shimoura, Susumu*; et al.

JPS Conference Proceedings (Internet), 6, p.030005_1 - 030005_4, 2015/06

813 (Records 1-20 displayed on this page)