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Journal Articles

A Study on support design for deep shaft sinking in rock masses of low strength and anisotropic initial stress

Motoshima, Takayuki*; Koike, Masashi*; Hagihara, Takeshi*; Aoyagi, Kazuhei

Dai-46-Kai Gamban Rikigaku Ni Kansuru Shimpojiumu Koenshu (CD-ROM), p.208 - 213, 2019/01

The short step construction method is the standard construction method for deep shaft excavation. However, considering the shaft construction in the sedimentary rock widely distributed in Japan, the support concrete stress can become excessive especially when there are bad conditions such as low rock strength, anisotropic initial stress, or high ground pressure. In this research, we introduced the dual support design to the short step construction method in order to reduce the support stress, and confirmed the validity by three dimensional numerical analysis. Validation analysis was conducted using the in-situ data in the Horonobe Underground Research Project conducted by Japan Atomic Energy Agency.

Journal Articles

Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation

Lohrmann, A.*; Castelletto, S.*; Klein, J. R.*; Oshima, Takeshi; Bosi, M.*; Negri, M.*; Lau, D. W. M.*; Gibson, B. C.*; Prawer, S.*; McCallum, J. C.*; et al.

Applied Physics Letters, 108(2), p.021107_1 - 021107_4, 2016/01

 Times Cited Count:17 Percentile:14.47(Physics, Applied)

Journal Articles

Radiation response of silicon carbide metal-oxide-semiconductor transistors in high dose region

Oshima, Takeshi; Yokoseki, Takashi; Murata, Koichi; Matsuda, Takuma; Mitomo, Satoshi; Abe, Hiroshi; Makino, Takahiro; Onoda, Shinobu; Hijikata, Yasuto*; Tanaka, Yuki*; et al.

Japanese Journal of Applied Physics, 55(1S), p.01AD01_1 - 01AD01_4, 2016/01

 Times Cited Count:6 Percentile:43.79(Physics, Applied)

Journal Articles

Surface modifications of hydrogen storage alloy by heavy ion beams with keV to MeV irradiation energies

Abe, Hiroshi; Tokuhira, Shinnosuke*; Uchida, Hirohisa*; Oshima, Takeshi

Nuclear Instruments and Methods in Physics Research B, 365(Part A), p.214 - 217, 2015/12

no abstracts in English

Journal Articles

New application of NV centers in CVD diamonds as a fluorescent nuclear track detector

Onoda, Shinobu; Haruyama, Moriyoshi; Teraji, Tokuyuki*; Isoya, Junichi*; Kada, Wataru*; Hanaizumi, Osamu*; Oshima, Takeshi

Physica Status Solidi (A), 212(11), p.2641 - 2644, 2015/11

 Times Cited Count:4 Percentile:66.91(Materials Science, Multidisciplinary)

Journal Articles

Defect engineering in silicon carbide; Single photon sources, quantum sensors and RF emitters

Kraus, H.; Simin, D.*; Fuchs, F.*; Onoda, Shinobu; Makino, Takahiro; Dyakonov, V.*; Oshima, Takeshi

Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.176 - 179, 2015/11

Journal Articles

Recovery of radiation degradation on inverted metamorphic triple-junction solar cells by light soaking

Shibata, Yuichi*; Imaizumi, Mitsuru*; Sato, Shinichiro; Oshima, Takeshi; Ooka, Sachiyo*; Takamoto, Tatsuya*

Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.65 - 68, 2015/11

Radiation response is one of the important properties for space solar cells. It should be well understood so as to accurately predict their degradation in orbit and also to improve their radiation tolerance. Recently, a phenomenon, recovery from the radiation degradation by light soaking, on inverted metamorphic (IMM) triple-junction (3J) solar cells was found out. In this work, the light soaking annealing effects on electron irradiated IMM 3J solar cells are reported. IMM 3J solar cells irradiated with 1 MeV electrons with the fluence of 3$$times$$10$$^{15}$$ e$$^-$$/cm$$^2$$ showed the recovery of open-circuit voltage, Voc, up to 43 mV after light (AM0, 1 sun) soaking of 3 hours. The increment of the electroluminescence intensity for InGaP in the IMM 3J cells due to the light soaking suggests that the Voc recovery occurs in InGaP top-cell rather than GaAs middle-cell or InGaAs bottom-cell.

Journal Articles

Measurement of ion beam induced current in quantum dot solar cells

Nakamura, Tetsuya*; Imaizumi, Mitsuru*; Sato, Shinichiro; Sugaya, Takeyoshi*; Mochizuki, Toru*; Okano, Yoshinobu*; Oshima, Takeshi

Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.73 - 76, 2015/11

The radiation effect on GaAs p-i-n solar cells with quantum dot (QD) in the i-layer was investigated. In a previous work, we particularly noted the degradation of fill-factor (FF) for the QD cells. In this work, to clarify the reason of the FF degradation in QD cells, generation current due to low-energy proton irradiation, which we call ion beam induced current (IBIC), was observed to characterize behavior of the generated minority carrier by the protons in the depletion region where QDs are located. The energy of protons was adjusted to damage the depletion region, and decrease of generation current was measured during the proton irradiation. The results suggest that the serious degradation of FF is caused by a decrease of the carrier collection efficiency in the depletion region due to proton damage.

Journal Articles

A Development of super radiation-hardened power electronics using silicon carbide semiconductors; Toward MGy-class radiation resistivity

Hijikata, Yasuto*; Mitomo, Satoshi*; Matsuda, Takuma*; Murata, Koichi*; Yokoseki, Takashi*; Makino, Takahiro; Takeyama, Akinori; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; et al.

Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.130 - 133, 2015/11

Journal Articles

Effect of humidity and temperature on the radiation response of SiC MOSFETs

Takeyama, Akinori; Matsuda, Takuma; Yokoseki, Takashi; Mitomo, Satoshi; Murata, Koichi; Makino, Takahiro; Onoda, Shinobu; Tanaka, Yuki*; Kandori, Mikio*; Yoshie, Toru*; et al.

Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.134 - 137, 2015/11

Journal Articles

NV centers in diamond used for detection of single ion track

Haruyama, Moriyoshi; Onoda, Shinobu; Kada, Wataru*; Teraji, Tokuyuki*; Isoya, Junichi*; Oshima, Takeshi; Hanaizumi, Osamu*

Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.184 - 187, 2015/11

Journal Articles

Surface modification effects on hydrogen absorption property of a hydrogen storage alloy by short pulse laser irradiation

Abe, Hiroshi; Shimomura, Takuya; Tokuhira, Shinnosuke*; Shimada, Yukihiro*; Takenaka, Yusuke*; Furuyama, Yuta*; Nishimura, Akihiko; Uchida, Hirohisa*; Daido, Hiroyuki; Oshima, Takeshi

Proceedings of 7th International Congress on Laser Advanced Materials Processing (LAMP 2015) (Internet), 4 Pages, 2015/08

A short pulse laser (the nanosecond and femtosecond) was applied to hydrogen absorbing alloys surface layer, and a surface modification experiment was put into effective to aim at improvement of hydrogen adsorption functionally. It was investigated about correlation between an initial hydrogen absorption reaction rate of hydrogen alloys and a laser irradiation in this research. The laser irradiation condition was done with pulse width 100 fsec and energy 0.2 - 3.4 mJ/pulse. It blazed down on hydrogen absorbing alloys (LaNi$$_{4.6}$$Al$$_{0.4}$$) and changed local order in the surface. As a result, the initial hydrogen absorption reaction rate was 1.5 - 3.0 times as fast as a irradiated sample, and the result and laser irradiated sample found out that a hydrogen absorption function improves. A laser irradiation can conclude to be effective in surface modification of the hydrogen storage materials.

Journal Articles

High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

Iwamoto, Naoya*; Azarov, A.*; Oshima, Takeshi; Moe, A. M. M.*; Svensson, B. G.*

Journal of Applied Physics, 118(4), p.045705_1 - 045705_8, 2015/07

 Times Cited Count:2 Percentile:82.81(Physics, Applied)

Journal Articles

Recovery of the electrical characteristics of SiC-MOSFETs irradiated with gamma-rays by thermal treatments

Yokoseki, Takashi; Abe, Hiroshi; Makino, Takahiro; Onoda, Shinobu; Tanaka, Yuki*; Kandori, Mikio*; Yoshie, Toru*; Hijikata, Yasuto*; Oshima, Takeshi

Materials Science Forum, 821-823, p.705 - 708, 2015/07

Journal Articles

Single-photon emitting diode in silicon carbide

Lohrmann, A.*; Iwamoto, Naoya*; Bodrog, Z.*; Castelletto, S.*; Oshima, Takeshi; Karle, T. J.*; Gali, A.*; Prawer, S.*; McCallum, J. C.*; Johnson, B. C.*

Nature Communications (Internet), 6, p.7783_1 - 7783_7, 2015/07

 Times Cited Count:54 Percentile:4.14(Multidisciplinary Sciences)

Journal Articles

Superdeformation in $$^{35}$$S

Go, Shintaro*; Ideguchi, Eiji*; Yokoyama, Rin*; Kobayashi, Motoki*; Kisamori, Keiichi*; Takaki, Motonobu*; Miya, Hiroyuki*; Ota, Shinsuke*; Michimasa, Shinichiro*; Shimoura, Susumu*; et al.

JPS Conference Proceedings (Internet), 6, p.030005_1 - 030005_4, 2015/06

Journal Articles

Energy loss process analysis for radiation degradation and immediate recovery of amorphous silicon alloy solar cells

Sato, Shinichiro; Beernink, K.*; Oshima, Takeshi

Japanese Journal of Applied Physics, 54(6), p.061401_1 - 061401_6, 2015/06

 Times Cited Count:2 Percentile:82.81(Physics, Applied)

Performance degradation and immediate recovery of a-Si/a-SiGe/a-SiGe triple-junction solar cells due to irradiation of silicon ions, electrons, and protons are investigated. Significant recovery is always observed independent of radiation species and temperature. It is shown that the characteristic time, which is obtained by analyzing the short-circuit current annealing behavior, is an important parameter for practical applications in space. In addition, the radiation degradation mechanism is discussed by analyzing the energy loss process of incident particles (ionizing energy loss: IEL, and non-ionizing energy loss: NIEL) and their relative damage factors. It is determined that ionizing dose is the primarily parameter for electron degradation whereas displacement damage dose is the primarily parameter for proton degradation. The impact of "radiation quality effect" has to be considered to understand the degradation due to Si ion irradiation.

Journal Articles

Atom-photon coupling from nitrogen-vacancy centres embedded in tellurite microspheres

Ruan, Y.*; Gibson, B. C.*; Lau, D. W. M.*; Greentree, A. D.*; Ji, H.*; Ebendorff-Heidepriem, H.*; Johnson, B. C.*; Oshima, Takeshi; Monro, T. M.*

Scientific Reports (Internet), 5, p.11486_1 - 11486_7, 2015/06

 Times Cited Count:2 Percentile:77.35(Multidisciplinary Sciences)

Journal Articles

Development of diagnostic method for deep levels in semiconductors using charge induced by heavy ion microbeams

Kada, Wataru*; Kambayashi, Yuya*; Iwamoto, Naoya*; Onoda, Shinobu; Makino, Takahiro; Koka, Masashi; Kamiya, Tomihiro; Hoshino, Norihiro*; Tsuchida, Hidekazu*; Kojima, Kazutoshi*; et al.

Nuclear Instruments and Methods in Physics Research B, 348, p.240 - 245, 2015/04

 Times Cited Count:4 Percentile:43.49(Instruments & Instrumentation)

Journal Articles

Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam

Pastuovi$'c$, $v{Z}$*; Capan, I.*; Cohen, D.*; Forneris, J.*; Iwamoto, Naoya*; Oshima, Takeshi; Siegele, R.*; Hoshino, Norihiro*; Tsuchida, Hidekazu*

Nuclear Instruments and Methods in Physics Research B, 348, p.233 - 239, 2015/04

 Times Cited Count:5 Percentile:34.97(Instruments & Instrumentation)

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