中島 健次; 川北 至信; 伊藤 晋一*; 阿部 淳*; 相澤 一也; 青木 裕之; 遠藤 仁*; 藤田 全基*; 舟越 賢一*; Gong, W.*; et al.
Quantum Beam Science (Internet), 1(3), p.9_1 - 9_59, 2017/12
鈴木 秀俊*; 仲田 侑加*; 高橋 正光; 池田 和磨*; 大下 祥雄*; 諸原 理*; 外賀 寛崇*; 森安 嘉貴*
AIP Advances (Internet), 6(3), p.035303_1 - 035303_6, 2016/03
The formation and evolution of rotational twin (TW) domains introduced by a stacking fault during molecular-beam epitaxial growth of GaAs on Si (111) substrates were studied by in situ X-ray diffraction. To modify the volume ratio of TW to total GaAs domains, GaAs was deposited under high and low group V/group III (V/III) flux ratios. For low V/III, there was less nucleation of TW than normal growth (NG) domains, although the NG and TW growth rates were similar. For high V/III, the NG and TW growth rates varied until a few GaAs monolayers were deposited; the mean TW domain size was smaller for all film thicknesses.
下村 憲一*; 鈴木 秀俊*; 佐々木 拓生; 高橋 正光; 大下 祥雄*; 神谷 格*
Journal of Applied Physics, 118(18), p.185303_1 - 185303_7, 2015/11
Direct measurements on the growth of InAs quantum dots (QDs) and various cap layers during molecular beam epitaxy are performed by X-ray diffraction (XRD). The evolution of strain induced both in the QDs and cap layers during capping is discussed based on the XRD intensity transients obtained at various lattice constants. Transients with different features are observed from those obtained during InGaAs and GaAs capping, attributed to In-Ga intermixing between the QDs and the cap layer. Photoluminescence wavelength can be tuned by controlling the intermixing and the cap layer thickness. It is demonstrated that such information about strain is useful for designing and preparing novel device structures.
樹神 克明; 井川 直樹; 社本 真一; 池田 一貴*; 大下 英敏*; 金子 直勝*; 大友 季哉*; 鈴谷 賢太郎; 星川 晃範*; 石垣 徹*
JPS Conference Proceedings (Internet), 8, p.034002_1 - 034002_6, 2015/09
Cubic spinel compound LiMnO with the mixed valence of Mn has non-metallic conductivity. The local structure determined by the PDF analysis has an orthorhombic lattice distortion and includes inequivalent Mn and Mn sites. YBaCoO also exhibits non-metallic conductivity although the Co has the mixed valence of +2.5 above 220 K which corresponds with charge ordering temperature. The PDF obtained at 450 K is not reproduced by the PDF calculated for the averaged structure and can be reproduced by the PDF calculated for the structure model corresponding to the charge ordering state. These results suggest that the valence electrons are localized with short-range periodicity, resulting in the non-metallic conductivities in these materials.
佐々木 拓生; 高橋 正光; 鈴木 秀俊*; 大下 祥雄*; 山口 真史*
Journal of Crystal Growth, 425, p.13 - 15, 2015/09
three-dimensional X-ray reciprocal space mapping ( 3D-RSM) was employed for studying molecular beam epitaxial (MBE) growth of InGaAs multilayer structures on GaAs(001). Measuring the symmetric 004 diffraction allowed us to separately obtain film properties of individual layers and to track the real-time evolution of both residual strain and lattice tilting. In two- layer growth of InGaAs, significant plastic relaxation was observed during the upper layer growth, and its critical thickness was experimentally determined. At the same thickness, it was found that the direction of lattice tilting drastically changed. We discuss these features based on the Dunstan model and confirm that strain relaxation in the multilayer structure is induced by two kinds of dislocation motion (dislocation multiplication and the generation of dislocation half-loops).
樹神 克明; 井川 直樹; 社本 真一; 池田 一貴*; 大下 英敏*; 金子 直勝*; 大友 季哉*; 鈴谷 賢太郎; 星川 晃範*; 石垣 徹*
JPS Conference Proceedings (Internet), 3, p.013012_1 - 013012_6, 2014/06
LiMnO has a cubic spinel structure with a single Mn site whose valence is +3.5. Below about 260 K, the compound exhibits a charge ordering and has inequivalent Mn sites with valences of +3 and +4. However, even in the cubic phase without the charge ordering, temperature dependence of the electrical conductivity is non-metallic. We have performed PDF (atomic pair distribution function) analysis on powder neutron diffraction data of LiMnO obtained above 300 K where the compound has cubic structure. The local structure determined by PDF analysis has an orthorhombic lattice distortion and includes the inequivalent Mn sites with valences of +3 and +4 up to, at least, about 450 K. These results indicate that valence electrons are localized at Mn sites with short range periodicity, resulting in the non-metallic electrical conductivity. It can be regarded as a glass state of valence electrons whereas a charge ordering can be regarded as a crystallization of valence electrons.
社本 真一; 樹神 克明; 伊巻 正*; 中谷 健; 大下 英敏*; 金子 直勝*; 増子 献児*; 坂本 健作; 山口 憲司; 鈴谷 賢太郎; et al.
JPS Conference Proceedings (Internet), 1, p.014011_1 - 014011_5, 2014/03
西 俊明*; 佐々木 拓生; 池田 和磨*; 鈴木 秀俊*; 高橋 正光; 下村 憲一*; 小島 信晃*; 大下 祥雄*; 山口 真史*
AIP Conference Proceedings 1556, p.14 - 17, 2013/09
X-ray reciprocal space mapping during InGaAs/GaAs(001) MBE growth is performed to investigate effects of substrate misorientations on crystallographic tilting. It was found that evolution of the crystallographic tilt for the InGaAs films is strongly dependent on both layer structures and substrate misorientations. We discuss these observations in terms of an asymmetric distribution of dislocations.
高橋 正光; 仲田 侑加*; 鈴木 秀俊*; 池田 和磨*; 神津 美和; Hu, W.; 大下 祥雄*
Journal of Crystal Growth, 378, p.34 - 36, 2013/09
Epitaxial growth of III-V semiconductors on silicon substrates is a longstanding issue in semiconductor technology including optoelectronics, high-mobility devices and solar cells. In addition to a lattice mismatch of 4%, formation of antiphase domain boundaries makes the growth of GaAs/Si(001) more complicated than that of congeneric combinations, such as Ge/Si(001) and InGaAs/GaAs(001). In the present study, defects in GaAs/Si(001) epitaxial films are investigated by three-dimensional X-ray reciprocal-space mapping technique, which we have successfully applied for InGaAs/GaAs(001) growth. Experiments were carried out at a synchrotron beamline 11XU at SPring-8 using a molecular-beam epitaxy chamber integrated with a multi-axis X-ray diffractometer. Streaky scattering extending from the GaAs 022 peak in the directions was observed, indicating development of plane defects, such as facets and stacking faults.
樹神 克明; 井川 直樹; 社本 真一; 池田 一貴*; 大下 英敏*; 金子 直勝*; 大友 季哉*; 鈴谷 賢太郎
Journal of the Physical Society of Japan, 82(9), p.094601_1 - 094601_6, 2013/09
We have performed powder neutron diffraction on LiMnO at 300 K. The crystal structure determined by Rietveld analysis is a cubic spinel with space group of in which all Mn atoms are crystallograghically equivalent, consistent with many preceding studies. However, the atomic pair distribution function (PDF) of this compound cannot be fitted by the cubic structure satisfactorily, and it can be reproduced by the orthorhombic structure with . It corresponds with the structure of charge ordered phase below about 260 K, indicating a short range charge ordering. In the local structure determined by PDF analysis, two types of MnO octahedra with long and short atomic distances between Mn and O atoms exist and their Mn-O distances are almost consistent with the distances in the charge ordered phase. From these results, valence electrons are localized at Mn sites like a glass even in the cubic phase, resulting in the non-metallic electrical conductivity.
町田 晃彦; 本田 充紀*; 服部 高典; 佐野 亜沙美; 綿貫 徹; 片山 芳則; 青木 勝敏; 大下 英敏*; 池田 一貴*; 大友 季哉*
波紋, 23(2), p.131 - 136, 2013/05
町田 晃彦; 本田 充紀*; 服部 高典; 佐野 亜沙美; 綿貫 徹; 片山 芳則; 青木 勝敏; 小松 一生*; 有馬 寛*; 大下 英敏*; et al.
Physical Review Letters, 108(20), p.205501_1 - 205501_5, 2012/05
佐々木 拓生*; 下村 憲一*; 鈴木 秀俊*; 高橋 正光; 神谷 格*; 大下 祥雄*; 山口 真史*
Japanese Journal of Applied Physics, 51(2), p.02BP01_1 - 02BP01_3, 2012/02
In-plane asymmetric strain relaxation in lattice-mismatched InGaAs/GaAs(001) heteroepitaxy is studied by three-dimensional X-ray reciprocal space mapping. Repeating crystal growth and growth interruptions during measurements allows us to investigate whether the strain relaxation is limited at a certain thickness or saturated. We find that the degree of relaxation during growth interruption depends on both the film thickness and the in-plane directions. Significant lattice relaxation is observed in rapid relaxation regimes during interruption. This is a clear indication that relaxation is kinetically limited. In addition, relaxation along the  direction can saturate more readily than that along the  direction. We discuss this result in terms of the interaction between orthogonally aligned dislocations.
佐々木 拓生*; 鈴木 秀俊*; 稲垣 充*; 池田 和磨*; 下村 憲一*; 高橋 正光; 神津 美和*; Hu, W.; 神谷 格*; 大下 祥雄*; et al.
IEEE Journal of Photovoltaics, 2(1), p.35 - 40, 2012/01
Compositionally step-graded InGaAs/GaAs(001) buffers with overshooting (OS) layers were evaluated by several characterization techniques for higher efficiency metamorphic III-V multijunction solar cells. By high-resolution X-ray diffraction, we found that fully relaxed or tensile strained top layers can be obtained by choosing appropriate OS layer thickness. Moreover, from real-time structural analysis using X-ray reciprocal space mapping ( RSM), it was proved that the top layer is almost strained to the OS layers, and it is independent of the thicknesses of the OS layers. Dislocations in the vicinity of the OS layers were observed by transmission electron microscopy, and the validity of results of RSM was confirmed from the viewpoint of misfit dislocation behavior. Finally, by photoluminescence measurements, we showed that tensile strained top layers may be suitable for the improvement of minority-carrier lifetime.
佐々木 拓生*; 鈴木 秀俊*; 高橋 正光; 大下 祥男*; 神谷 格*; 山口 真史*
Journal of Applied Physics, 110(11), p.113502_1 - 113502_7, 2011/12
Dislocation-mediated strain relaxation during lattice-mismatched InGaAs/GaAs(001) heteroepitaxy was studied through X-ray reciprocal space mapping. At the synchrotron radiation facility SPring-8, a hybrid system of molecular beam epitaxy and X-ray diffractometry with a two-dimensional detector enabled us to perform reciprocal space mapping at high-speed and high-resolution. Using this experimental setup, the lattice constants, the diffraction broadenings along in-plane and out-of-plane directions, and the diffuse scattering were investigated. The strain relaxation processes were classified into four thickness ranges with different dislocation behavior. In addition, the existence of transition regimes between the thickness ranges was identified.
佐々木 拓生*; 鈴木 秀俊*; 崔 炳久*; 高橋 正光; 藤川 誠司; 神谷 格*; 大下 祥雄*; 山口 真史*
Journal of Crystal Growth, 323(1), p.13 - 16, 2011/05
InGaAs/GaAs(001)の分子線エピタキシャル成長中のひずみ緩和の様子をその場X線逆格子マッピングにより解析した。成長温度420, 445, 477Cにおける残留ひずみ・結晶性の変化の様子が測定された。Dodson-Tsaoの運動学的モデルは、実験による残留ひずみの測定結果とよく一致することがわかった。さらにひずみ緩和過程における転位の運動の温度依存性の解析から、転位の運動の熱励起を議論することが可能になった。
鈴木 秀俊*; 佐々木 拓生*; 崔 炳久*; 大下 祥雄*; 神谷 格*; 山口 真史*; 高橋 正光; 藤川 誠司
Applied Physics Letters, 97(4), p.041906_1 - 041906_3, 2010/07
Real-time three-dimensional reciprocal space mapping measurement during InGaAs/GaAs(001) molecular beam epitaxial growth has been performed to investigate anisotropy in relaxation processes. Anisotropies, strain relaxation, and crystal quality in  and  directions were simultaneously evaluated via the position and broadness of 022 diffraction. In the small-thickness region, strain relaxation caused by -dislocations is higher than that caused by -dislocations, and therefore crystal quality along  is worse than that along . Rapid relaxation along both  and  directions occurs at almost the same thickness. After rapid relaxation, anisotropy in strain relaxation gradually decreases, whereas crystal quality along  direction, presumably due to -dislocations, becomes better that along  direction and the ratio does not decay with thickness.
佐々木 拓生*; 鈴木 秀俊*; 崔 炳久*; 高橋 正光; 藤川 誠司; 大下 祥雄*; 山口 真史*
Materials Research Society Symposium Proceedings, Vol.1268, 6 Pages, 2010/05
The in situ X-ray reciprocal space mapping (in situ RSM) of symmetric diffraction measurements during lattice-mismatched InGaAs/GaAs(001) growth were performed to investigate the strain relaxation mechanisms. The evolution of the residual strain and crystal quality were obtained as a function of InGaAs film thickness. Based on the results, the correlation between the strain relaxation and the dislocations during the film growth were evaluated. As a result, film thickness ranges with different relaxation mechanisms were classified, and dominant dislocation behavior in each phase were deduced. From the data obtained in in situ measurements, the quantitative strain relaxation models were proposed based on a dislocation kinetic model developed by Dodson and Tsao. Good agreement between the in situ data and the model ensured the validity of the dominant dislocation behavior deduced from the present study.
笠松 良崇*; 豊嶋 厚史; 浅井 雅人; 塚田 和明; Li, Z.; 石井 康雄; 當銘 勇人*; 佐藤 哲也; 菊池 貴宏; 西中 一朗; et al.
Chemistry Letters, 38(11), p.1084 - 1085, 2009/10
佐々木 拓生*; 鈴木 秀俊*; 崔 炳久*; Lee, J.-H.*; 高橋 正光; 藤川 誠司; 新船 幸二*; 神谷 格*; 大下 祥雄*; 山口 真史*
Applied Physics Express, 2, p.085501_1 - 085501_3, 2009/07
real-time X-ray diffraction measurements during InGaAs/GaAs(001) epitaxial growth are performed for the first time to understand the strain relaxation mechanisms in a lattice-mismatched system. The high resolution reciprocal space maps of 004 diffraction obtained at interval of 6.2 nm thickness enable transient behavior of residual strain and crystal quality to be observed simultaneously as a function of InGaAs film thickness. From the evolution of these data, five thickness ranges with different relaxation processes and these transition points are determined quantitatively, and the dominant dislocation behavior in each phase is deduced.