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Tamatsukuri, Hiromu; Murakami, Yoichi*; Kuramoto, Yoshio*; Sagayama, Hajime*; Matsuura, Masato*; Kawakita, Yukinobu; Matsuishi, Satoru*; Washio, Yasuhito*; Inoshita, Takeshi*; Hamada, Noriaki*; et al.
Physical Review B, 102(22), p.224406_1 - 224406_5, 2020/12
Times Cited Count:8 Percentile:42.28(Materials Science, Multidisciplinary)Suzuki, Hidetoshi*; Nakata, Yuka*; Takahashi, Masamitsu; Ikeda, Kazuma*; Oshita, Yoshio*; Morohara, Osamu*; Geka, Hirotaka*; Moriyasu, Yoshitaka*
AIP Advances (Internet), 6(3), p.035303_1 - 035303_6, 2016/03
Times Cited Count:4 Percentile:18.79(Nanoscience & Nanotechnology)Shimomura, Kenichi*; Suzuki, Hidetoshi*; Sasaki, Takuo; Takahashi, Masamitsu; Oshita, Yoshio*; Kamiya, Itaru*
Journal of Applied Physics, 118(18), p.185303_1 - 185303_7, 2015/11
Times Cited Count:9 Percentile:36.41(Physics, Applied)Sasaki, Takuo; Takahashi, Masamitsu; Suzuki, Hidetoshi*; Oshita, Yoshio*; Yamaguchi, Masafumi*
Journal of Crystal Growth, 425, p.13 - 15, 2015/09
Times Cited Count:4 Percentile:35.12(Crystallography)Sasaki, Takuo; Norman, A. G.*; Romero, M. J.*; Al-Jassim, M. M.*; Takahashi, Masamitsu; Kojima, Nobuaki*; Oshita, Yoshio*; Yamaguchi, Masafumi*
Physica Status Solidi (C), 10(11), p.1640 - 1643, 2013/11
Times Cited Count:4 Percentile:82.73(Physics, Applied)Nishi, Toshiaki*; Sasaki, Takuo; Ikeda, Kazuma*; Suzuki, Hidetoshi*; Takahashi, Masamitsu; Shimomura, Kenichi*; Kojima, Nobuaki*; Oshita, Yoshio*; Yamaguchi, Masafumi*
AIP Conference Proceedings 1556, p.14 - 17, 2013/09
Times Cited Count:0 Percentile:0.00(Energy & Fuels)Takahashi, Masamitsu; Nakata, Yuka*; Suzuki, Hidetoshi*; Ikeda, Kazuma*; Kozu, Miwa; Hu, W.; Oshita, Yoshio*
Journal of Crystal Growth, 378, p.34 - 36, 2013/09
Times Cited Count:5 Percentile:41.90(Crystallography)Sasaki, Takuo*; Shimomura, Kenichi*; Suzuki, Hidetoshi*; Takahashi, Masamitsu; Kamiya, Itaru*; Oshita, Yoshio*; Yamaguchi, Masafumi*
Japanese Journal of Applied Physics, 51(2), p.02BP01_1 - 02BP01_3, 2012/02
Times Cited Count:2 Percentile:8.66(Physics, Applied)Sasaki, Takuo*; Suzuki, Hidetoshi*; Inagaki, Makoto*; Ikeda, Kazuma*; Shimomura, Kenichi*; Takahashi, Masamitsu; Kozu, Miwa*; Hu, W.; Kamiya, Itaru*; Oshita, Yoshio*; et al.
IEEE Journal of Photovoltaics, 2(1), p.35 - 40, 2012/01
Times Cited Count:5 Percentile:21.94(Energy & Fuels)Sasaki, Takuo*; Suzuki, Hidetoshi*; Takahashi, Masamitsu; Oshita, Yoshio*; Kamiya, Itaru*; Yamaguchi, Masafumi*
Journal of Applied Physics, 110(11), p.113502_1 - 113502_7, 2011/12
Times Cited Count:12 Percentile:45.83(Physics, Applied)Sasaki, Takuo*; Suzuki, Hidetoshi*; Sai, Akihisa*; Takahashi, Masamitsu; Fujikawa, Seiji; Kamiya, Itaru*; Oshita, Yoshio*; Yamaguchi, Masafumi*
Journal of Crystal Growth, 323(1), p.13 - 16, 2011/05
Times Cited Count:20 Percentile:82.52(Crystallography)Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) molecular beam epitaxy was studied by in situ X-ray reciprocal space mapping. Evolution of the residual strain and crystal quality for the InGaAs film was obtained as a function of film thickness at growth temperatures of 420, 445 and 477 C. In the early stages of strain relaxation, it was found that evolution of the residual strain and crystal quality was dependent on the growth temperature. In order to discuss this observation quantitatively, the strain relaxation model was proposed based on the Dodson-Tsao kinetic model, and its validity was demonstrated by good agreement with the experimental residual strain. Additionally, rate coefficients reflecting dislocation motions during strain relaxation were obtained as a function of growth temperature and strain relaxation was discussed in terms of the thermally active dislocation motion.
Suzuki, Hidetoshi*; Sasaki, Takuo*; Sai, Akihisa*; Oshita, Yoshio*; Kamiya, Itaru*; Yamaguchi, Masafumi*; Takahashi, Masamitsu; Fujikawa, Seiji
Applied Physics Letters, 97(4), p.041906_1 - 041906_3, 2010/07
Times Cited Count:32 Percentile:74.28(Physics, Applied)Sasaki, Takuo*; Suzuki, Hidetoshi*; Sai, Akihisa*; Takahashi, Masamitsu; Fujikawa, Seiji; Oshita, Yoshio*; Yamaguchi, Masafumi*
Materials Research Society Symposium Proceedings, Vol.1268, 6 Pages, 2010/05
Times Cited Count:0 Percentile:0.00(Materials Science, Multidisciplinary)Sasaki, Takuo*; Suzuki, Hidetoshi*; Sai, Akihisa*; Lee, J.-H.*; Takahashi, Masamitsu; Fujikawa, Seiji; Arafune, Koji*; Kamiya, Itaru*; Oshita, Yoshio*; Yamaguchi, Masafumi*
Applied Physics Express, 2, p.085501_1 - 085501_3, 2009/07
Times Cited Count:35 Percentile:75.97(Physics, Applied)Matsukado, Koji*; Esirkepov, T. Z.; Kinoshita, Kenichi*; Daido, Hiroyuki; Utsumi, Takayuki*; Li, Z.*; Fukumi, Atsushi*; Hayashi, Yukio; Orimo, Satoshi; Nishiuchi, Mamiko; et al.
Physical Review Letters, 91(21), p.215001_1 - 215001_4, 2003/11
Times Cited Count:137 Percentile:95.14(Physics, Multidisciplinary)no abstracts in English
Khan, A.*; Yamaguchi, Masafumi*; Oshita, Yoshio*; Dharmarasu, N.*; Araki, Kenji*; Abe, Takao*; Ito, Hisayoshi; Oshima, Takeshi; Imaizumi, Mitsuru*; Matsuda, Sumio*
Journal of Applied Physics, 90(3), p.1170 - 1178, 2001/08
Times Cited Count:56 Percentile:86.16(Physics, Applied)1MeV-electron and 10MeV-proton irradiations into Si doped various impurities such as B, Ga, O and C were performed and residual defects in the Si were studied using DLTS and C-V measurements.It was revealed that Ci-Oi whose level is Ev-0.36 eV and Bi-Oi whose energy is Ec-0.18eV were generated. In Ga-doped Si, the generation of Ci-Oi was suppressed. Since Ci-Oi acts as scattering center, this result indicates that the radiation resistance of solar cells is improved by using Ga-doped Si substrates.Furthermore, a new defect level (Ev+18eV) was observed in Ga-dpoed Si by irradiation. This defect level was annealed out above 350 C.
Horita, Masakuni*; Kinoshita, Naoto*; Yoshioka, Naoya*; Tsuchihara, H.*
JNC TJ7400 2005-014, 424 Pages, 1997/03
In this study, the excavation disturbed zone (EDZ) in deep rock is evaluated in the 250m-level drift st the Kamaishi Mine for the kamaishi In-situ Test Project, Phase II.
Yoshioka, Naoya*; Tsuchihara, H.*; Horita, M.*; Kinoshita, Naoto*
PNC TJ1449 96-007, 349 Pages, 1996/03
None
Horita, Masakuni*; Kinoshita, Naoto*; Yoshioka, Naoya*; Nagahisa, K.*
JNC TJ7400 2005-013, 445 Pages, 1995/03
The characteristics and extend of EDZ around an exting drift are evaluated by means of several investigation techniques and test in the drift and borehole.
; Omura, Akiko; Yamazaki, Yoshio; ; Hirano, Koichiro; Oshita, Hironori
Proceedings of LINAC 94, ,
None