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Journal Articles

Magnetism induced by interlayer electrons in the quasi-two-dimensional electride Y$$_{2}$$C; Inelastic neutron scattering study

Tamatsukuri, Hiromu; Murakami, Yoichi*; Kuramoto, Yoshio*; Sagayama, Hajime*; Matsuura, Masato*; Kawakita, Yukinobu; Matsuishi, Satoru*; Washio, Yasuhito*; Inoshita, Takeshi*; Hamada, Noriaki*; et al.

Physical Review B, 102(22), p.224406_1 - 224406_5, 2020/12

 Times Cited Count:3 Percentile:58.93(Materials Science, Multidisciplinary)

Journal Articles

Real-time observation of rotational twin formation during molecular-beam epitaxial growth of GaAs on Si (111) by X-ray diffraction

Suzuki, Hidetoshi*; Nakata, Yuka*; Takahashi, Masamitsu; Ikeda, Kazuma*; Oshita, Yoshio*; Morohara, Osamu*; Geka, Hirotaka*; Moriyasu, Yoshitaka*

AIP Advances (Internet), 6(3), p.035303_1 - 035303_6, 2016/03

 Times Cited Count:4 Percentile:25.92(Nanoscience & Nanotechnology)

Journal Articles

Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using ${{it in situ}}$ X-ray diffraction

Shimomura, Kenichi*; Suzuki, Hidetoshi*; Sasaki, Takuo; Takahashi, Masamitsu; Oshita, Yoshio*; Kamiya, Itaru*

Journal of Applied Physics, 118(18), p.185303_1 - 185303_7, 2015/11

 Times Cited Count:7 Percentile:37.13(Physics, Applied)

Journal Articles

${it In situ}$ three-dimensional X-ray reciprocal-space mapping of InGaAs multilayer structures grown on GaAs(001) by MBE

Sasaki, Takuo; Takahashi, Masamitsu; Suzuki, Hidetoshi*; Oshita, Yoshio*; Yamaguchi, Masafumi*

Journal of Crystal Growth, 425, p.13 - 15, 2015/09

 Times Cited Count:3 Percentile:34(Crystallography)

Journal Articles

Defect characterization in compositionally graded InGaAs layers on GaAs (001) grown by MBE

Sasaki, Takuo; Norman, A. G.*; Romero, M. J.*; Al-Jassim, M. M.*; Takahashi, Masamitsu; Kojima, Nobuaki*; Oshita, Yoshio*; Yamaguchi, Masafumi*

Physica Status Solidi (C), 10(11), p.1640 - 1643, 2013/11

 Times Cited Count:3 Percentile:81.12

Journal Articles

Real-time observation of crystallographic tilting InGaAs layers on GaAs offcut substrates

Nishi, Toshiaki*; Sasaki, Takuo; Ikeda, Kazuma*; Suzuki, Hidetoshi*; Takahashi, Masamitsu; Shimomura, Kenichi*; Kojima, Nobuaki*; Oshita, Yoshio*; Yamaguchi, Masafumi*

AIP Conference Proceedings 1556, p.14 - 17, 2013/09

 Times Cited Count:0 Percentile:0.01

Journal Articles

In situ three-dimensional X-ray reciprocal-space mapping of GaAs epitaxial films on Si(001)

Takahashi, Masamitsu; Nakata, Yuka*; Suzuki, Hidetoshi*; Ikeda, Kazuma*; Kozu, Miwa; Hu, W.; Oshita, Yoshio*

Journal of Crystal Growth, 378, p.34 - 36, 2013/09

 Times Cited Count:5 Percentile:45.92(Crystallography)

Journal Articles

Observation of in-plane asymmetric strain relaxation during crystal growth and growth interruption in InGaAs/GaAs(001)

Sasaki, Takuo*; Shimomura, Kenichi*; Suzuki, Hidetoshi*; Takahashi, Masamitsu; Kamiya, Itaru*; Oshita, Yoshio*; Yamaguchi, Masafumi*

Japanese Journal of Applied Physics, 51(2), p.02BP01_1 - 02BP01_3, 2012/02

 Times Cited Count:2 Percentile:10.01(Physics, Applied)

Journal Articles

Real-time structural analysis of compositionally graded InGaAs/GaAs(001) layers

Sasaki, Takuo*; Suzuki, Hidetoshi*; Inagaki, Makoto*; Ikeda, Kazuma*; Shimomura, Kenichi*; Takahashi, Masamitsu; Kozu, Miwa*; Hu, W.; Kamiya, Itaru*; Oshita, Yoshio*; et al.

IEEE Journal of Photovoltaics, 2(1), p.35 - 40, 2012/01

 Times Cited Count:5 Percentile:25.16(Energy & Fuels)

Journal Articles

X-ray reciprocal space mapping of dislocation-mediated strain relaxation during InGaAs/GaAs(001) epitaxial growth

Sasaki, Takuo*; Suzuki, Hidetoshi*; Takahashi, Masamitsu; Oshita, Yoshio*; Kamiya, Itaru*; Yamaguchi, Masafumi*

Journal of Applied Physics, 110(11), p.113502_1 - 113502_7, 2011/12

 Times Cited Count:11 Percentile:47.47(Physics, Applied)

Journal Articles

Growth temperature dependence of strain relaxation during InGaAs/GaAs(0 0 1) heteroepitaxy

Sasaki, Takuo*; Suzuki, Hidetoshi*; Sai, Akihisa*; Takahashi, Masamitsu; Fujikawa, Seiji; Kamiya, Itaru*; Oshita, Yoshio*; Yamaguchi, Masafumi*

Journal of Crystal Growth, 323(1), p.13 - 16, 2011/05

 Times Cited Count:17 Percentile:82.2(Crystallography)

Growth temperature dependence of strain relaxation during In$$_{0.12}]$$Ga$$_{0.88}$$As/GaAs(001) molecular beam epitaxy was studied by in situ X-ray reciprocal space mapping. Evolution of the residual strain and crystal quality for the InGaAs film was obtained as a function of film thickness at growth temperatures of 420, 445 and 477 $$^{circ}$$C. In the early stages of strain relaxation, it was found that evolution of the residual strain and crystal quality was dependent on the growth temperature. In order to discuss this observation quantitatively, the strain relaxation model was proposed based on the Dodson-Tsao kinetic model, and its validity was demonstrated by good agreement with the experimental residual strain. Additionally, rate coefficients reflecting dislocation motions during strain relaxation were obtained as a function of growth temperature and strain relaxation was discussed in terms of the thermally active dislocation motion.

Journal Articles

Real-time observation of anisotropic strain relaxation by three-dimensional reciprocal space mapping during InGaAs/GaAs(001) growth

Suzuki, Hidetoshi*; Sasaki, Takuo*; Sai, Akihisa*; Oshita, Yoshio*; Kamiya, Itaru*; Yamaguchi, Masafumi*; Takahashi, Masamitsu; Fujikawa, Seiji

Applied Physics Letters, 97(4), p.041906_1 - 041906_3, 2010/07

 Times Cited Count:30 Percentile:76.37(Physics, Applied)

Journal Articles

In situ study of strain relaxation mechanisms during lattice-mismatched InGaAs/GaAs growth by X-ray reciprocal space mapping

Sasaki, Takuo*; Suzuki, Hidetoshi*; Sai, Akihisa*; Takahashi, Masamitsu; Fujikawa, Seiji; Oshita, Yoshio*; Yamaguchi, Masafumi*

Materials Research Society Symposium Proceedings, Vol.1268, 6 Pages, 2010/05

 Times Cited Count:0 Percentile:0.01

Journal Articles

${it In situ}$ real-time X-Ray reciprocal space mapping during InGaAs/GaAs growth for understanding strain relaxation mechanisms

Sasaki, Takuo*; Suzuki, Hidetoshi*; Sai, Akihisa*; Lee, J.-H.*; Takahashi, Masamitsu; Fujikawa, Seiji; Arafune, Koji*; Kamiya, Itaru*; Oshita, Yoshio*; Yamaguchi, Masafumi*

Applied Physics Express, 2, p.085501_1 - 085501_3, 2009/07

 Times Cited Count:34 Percentile:78.52(Physics, Applied)

Journal Articles

Energetic protons from a few-micron metallic foil evaporated by an intense laser pulse

Matsukado, Koji*; Esirkepov, T. Z.; Kinoshita, Kenichi*; Daido, Hiroyuki; Utsumi, Takayuki*; Li, Z.*; Fukumi, Atsushi*; Hayashi, Yukio; Orimo, Satoshi; Nishiuchi, Mamiko; et al.

Physical Review Letters, 91(21), p.215001_1 - 215001_4, 2003/11

 Times Cited Count:134 Percentile:95.57(Physics, Multidisciplinary)

no abstracts in English

Journal Articles

Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells

Khan, A.*; Yamaguchi, Masafumi*; Oshita, Yoshio*; Dharmarasu, N.*; Araki, Kenji*; Abe, Takao*; Ito, Hisayoshi; Oshima, Takeshi; Imaizumi, Mitsuru*; Matsuda, Sumio*

Journal of Applied Physics, 90(3), p.1170 - 1178, 2001/08

 Times Cited Count:50 Percentile:85.51(Physics, Applied)

1MeV-electron and 10MeV-proton irradiations into Si doped various impurities such as B, Ga, O and C were performed and residual defects in the Si were studied using DLTS and C-V measurements.It was revealed that Ci-Oi whose level is Ev-0.36 eV and Bi-Oi whose energy is Ec-0.18eV were generated. In Ga-doped Si, the generation of Ci-Oi was suppressed. Since Ci-Oi acts as scattering center, this result indicates that the radiation resistance of solar cells is improved by using Ga-doped Si substrates.Furthermore, a new defect level (Ev+18eV) was observed in Ga-dpoed Si by irradiation. This defect level was annealed out above 350 C.

JAEA Reports

Study on Evaluation of Excavation Disturbed Zone at kamaishi Mine in 1996

Horita, Masakuni*; Kinoshita, Naoto*; Yoshioka, Naoya*; Tsutihara, H.*

JNC TJ7400 2005-014, 424 Pages, 1997/03

In this study, the excavation disturbed zone (EDZ) in deep rock is evaluated in the 250m-level drift st the Kamaishi Mine for the kamaishi In-situ Test Project, Phase II.

JAEA Reports

None

Yoshioka, Naoya*; Tsuchihara, H.*; Horita, M.*; Kinoshita, Naoto*

PNC TJ1449 96-007, 349 Pages, 1996/03

PNC-TJ1449-96-007.pdf:13.22MB

None

JAEA Reports

Study on Evaluation of Excavation Disturbed Zone at kamaishi Mine

Horita, Masakuni*; Kinoshita, Naoto*; Yoshioka, Naoya*; Nagahisa, K.*

JNC TJ7400 2005-013, 445 Pages, 1995/03

JNC-TJ7400-2005-013.PDF:15.85MB

The characteristics and extend of EDZ around an exting drift are evaluated by means of several investigation techniques and test in the drift and borehole.

Oral presentation

Crystal growth dynamics studied using in situ X-ray diffraction; Zero-, one- and two-dimensional structures

Takahashi, Masamitsu; Hu, W.; Kozu, Miwa*; Sasaki, Takuo*; Oshita, Yoshio*; Suzuki, Hidetoshi*

no journal, , 

Growth dynamics of semiconductor nanostructures ranging from quantum wells to quantum dots will be discussed on the basis of in situ X-ray diffraction. Experiments were performed using a molecular-beam epitaxy (MBE) chamber integrated with an X-ray difftactometer at 11XU of SPring-8. First, of all the nanostructures, quantum wells are playing the most important roles in technological applications today. For in situ study of growth of quantum wells, we have developed a real time X-ray technique enabling three-dimensional reciprocal space mapping during growth and applied it for the investigation of InGaAs growth on GaAs(001). Second, quantum wires are recently attracting much interest because of their extremely anisotropic one-dimensional shape. In this paper, we will present in situ X-ray diffraction data during the As-assisted vapor-liquid-solid growth of GaAs nanowires. Finally, the growth of quantum dots, which are the ultimate quantum structure, will be discussed as well.

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