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Journal Articles

Band structures of Wurtzite InN and Ga$$_{1-x}$$In$$_x$$N by all-electron $$GW$$ calculation

Usuda, Manabu; Hamada, Noriaki*; Shiraishi, Kenji*; Oshiyama, Atsushi*

Japanese Journal of Applied Physics, Part 2, 43(3B), p.L407 - L410, 2004/03

https://doi.org/10.1143/JJAP.43.L407
 Times Cited Count：31 Percentile：72.01(Physics, Applied)

We report first-principles electronic band-structure calculations of InN by using the all-electron full-potential linearized augmented-plane-wave (FLAPW) method in the $$GW$$ approximation (GWA), and provide the reliable theoretical bandgap of InN. Our calculation suggests that InN is a narrow-gap semiconductor and strongly supports the recently reported smaller bandgaps.

Journal Articles

Bandgaps of Ga$$_{1-x}$$In$$_x$$N by all-electron GWA calculation

Usuda, Manabu; Hamada, Noriaki*; Shiraishi, Kenji*; Oshiyama, Atsushi*

Physica Status Solidi (C), 0(7), p.2733 - 2736, 2003/12

https://doi.org/10.1002/pssc.200303278
 Times Cited Count：2 Percentile：68.34(Crystallography)

The electronic band-structures of wurtzite-type Ga$$_{1-x}$$In$$_x$$N are calculated by using an all-electron FLAPW method in the $$GW$$ approximation(GWA). Our calculations show that the bandgap of InN is smaller than 1 eV, and strongly support the recently observed smaller bandgaps.

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