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Journal Articles

Control of epitaxy of graphene by crystallographic orientation of a Si substrate toward device applications

Fukidome, Hirokazu*; Takahashi, Ryota*; Abe, Shunsuke*; Imaizumi, Kei*; Handa, Hiroyuki*; Kang, H. C.*; Karasawa, Hiromi*; Suemitsu, Tetsuya*; Otsuji, Taiichi*; Enta, Yoshiharu*; et al.

Journal of Materials Chemistry, 21(43), p.17242 - 17248, 2011/11

 Times Cited Count:28 Percentile:63.65(Chemistry, Physical)

Oral presentation

Viability of graphene-on-silicon technology toward fusion of graphene with advanced Si-CMOS technologies

Fukidome, Hirokazu*; Takahashi, Ryota*; Miyamoto, Yu*; Handa, Hiroyuki*; Kang, H. C.*; Karasawa, Hiromi*; Suemitsu, Tetsuya*; Otsuji, Taiichi*; Yoshigoe, Akitaka; Teraoka, Yuden; et al.

no journal, , 

By forming an SiC thin film on Si substrates and by thermally converting the film top surface into graphene, a graphene layer can be epitaxially formed on the Si substrates (graphene on silicon;GOS). In this method, epitaxial SiC thin films are first grown on the silicon substrate by using gas source molecular beam epitaxy. Normally, 3C-SiC(111), (110) and (100)-oriented films are grown on Si(111), (110) and (100) substrates, respectively. The surface of SiC thin films is then thermally graphitized by annealing at 1523 K in UHV to sublimate Si atoms. Not only 3C-SiC(111) but also (100) and (110) surfaces, produced epitaxial graphene as well. The Raman spectra show distinct D, G and G' bands for all these orientations. Synchrotron-radiation X-ray photoelectron spectrum of C1s presents sp$$^{2}$$ carbons atoms. The observation of the equally successful growth of graphene on these low-index SiC surfaces makes the GOS technology aviable in the post-Si device developments.

Oral presentation

Control of electronic and structural properties of epitaxial graphene on 3C-SiC/Si and its device applications

Fukidome, Hirokazu*; Kotsugi, Masato*; Okochi, Takuo*; Yoshigoe, Akitaka; Teraoka, Yuden; Enta, Yoshiharu*; Kinoshita, Toyohiko*; Suemitsu, Tetsuya*; Otsuji, Taiichi*; Suemitsu, Maki*

no journal, , 

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