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Son, N. T.*; Hemmingsson, C. G.*; Paskova, T.*; Evans, K. R.*; Usui, Akira*; Morishita, Norio; Oshima, Takeshi; Isoya, Junichi*; Monemar, B.*; Janzn, E.*
Physical Review B, 80(15), p.153202_1 - 153202_4, 2009/10
Times Cited Count:38 Percentile:79.43(Materials Science, Multidisciplinary)GaN samples were irradiated with electrons of 2 MeV at 110/cm, and electron spin resonance (ESR) was measured at 77 K. As a result, four defect signals which are labeled D1 to D4 were observed. The D2 signal was identified to be negatively charged gallium vacancy - oxygen pair from the details studies of N hf structure.