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Rodriguez, D.; Bogucarska, T.*; Koizumi, Mitsuo; Lee, H.-J.; Pedersen, B.*; Rossi, F.; Takahashi, Tone; Varasano, G.*
Nuclear Instruments and Methods in Physics Research A, 997, p.165146_1 - 165146_13, 2021/05
Times Cited Count：2 Percentile：26.38(Instruments & Instrumentation)Rossi, F.; Koizumi, Mitsuo; Lee, H.-J.; Rodriguez, D.; Takahashi, Tone; Abbas, K.*; Bogucarska, T.*; Crochemore, J.-M.*; Pedersen, B.*; Varasano, G.*
61st Annual Meeting of the Institute of Nuclear Materials Management (INMM 2020), Vol.2, p.907 - 911, 2021/00
Rossi, F.; Bogucarska, T.*; Koizumi, Mitsuo; Lee, H.-J.; Pedersen, B.*; Rodriguez, D.; Takahashi, Tone; Varasano, G.*
Nuclear Instruments and Methods in Physics Research A, 977, p.164306_1 - 164306_7, 2020/10
Times Cited Count：4 Percentile：38.05(Instruments & Instrumentation)
-Irradiated n-type 4H-SiCBeyer, F. C.*; Hemmingsson, C. G.*; Pedersen, H.*; Henry, A.*; Isoya, Junichi*; Morishita, Norio*; Oshima, Takeshi; Janz
n, E.*
Journal of Physics D; Applied Physics, 45(45), p.455301_1 - 455301_7, 2012/11
Times Cited Count：20 Percentile：61.15(Physics, Applied)
-type 4H-SiCBeyer, F. C.*; Hemmingsson, C.*; Pedersen, H.*; Henry, A.*; Janzn, E.*; Isoya, Junichi*; Morishita, Norio*; Oshima, Takeshi
Journal of Applied Physics, 109(10), p.103703_1 - 103703_6, 2011/05
Times Cited Count：18 Percentile：58.20(Physics, Applied)By low-energy electron (200 keV) irradiation into epitaxial n-type 4H-SiC with a dose of 5
10
/cm
, the bistable M-center is detected in the deep level transient spectroscopy (DLTS) spectrum. The annealing behavior of the M-center is investigated. During the annihilation process of M-center, the bistable EB-centers are detected in the low temperature range of the DLTS spectrum. The value of annealing energy of the M-center is similar to the generation energy of the EB-centers. This suggests that the M-center partially transforms to the EB-centers by annealing. The EB-centers completely disappeared after annealing temperatures higher than 700 
C. Since the threshold energy for moving Si atom in SiC is higher than the applied irradiation energy of electrons, and the annihilation temperatures are relatively low, the M-center and the EB-centers are attributed to defects related to the C atom in SiC.
Beyer, F. C.*; Hemmingsson, C.*; Pedersen, H.*; Henry, A.*; Isoya, Junichi*; Morishita, Norio; Oshima, Takeshi; Janzn, E.*
Materials Science Forum, 645-648, p.435 - 438, 2010/00
By low-energy electron irradiation of epitaxial n-type 4H-SiC, the Deep Level Transient Spectroscopy (DLTS) peaks called the defects Z1/2 and EH6/7 were observed, which were also observed in as-grown layer and the commonly found peaks EH1 and EH3 (M-center) also appeared. New defect named the EB-centers increased after annealing out of EH1 and EH3. Since low energy electron irradiation (less than 220 keV) affects mainly the carbon atom in SiC, both the M- and EB-centers might be carbon related defects.
Rossi, F.; Abbas, K.*; Koizumi, Mitsuo; Lee, H.-J.; Nonneman, S.*; Pedersen, B.*; Rodriguez, D.; Takahashi, Tone
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