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Journal Articles

Positron study of electron irradiation-induced vacancy defects in SiC

Kawasuso, Atsuo; Yoshikawa, Masahito; Ito, Hisayoshi; Krause-Rehberg, R.*; Redmann, F.*; Higuchi, Takatoshi*; Betsuyaku, Kiyoshi*

Physica B; Condensed Matter, 376-377, p.350 - 353, 2006/04

 Times Cited Count:11 Percentile:48.8(Physics, Condensed Matter)

In this presentation, we report identification of vacancy defects in cubic and hexagonal SiC irradiated with fast electrons through electron-pisitron momentum distribution measurements and theoretical analyses. In cubic SiC isolated silicon vacancies are responsible for positron trapping. The lifetime of positrons trapped at silicon vacancies is prolonged due to the outward lattice relaxation. Because of the local tetrahedral symmetry of silicon vacancies, the observed momentum distributions are consistently explained. In the case of hexagonal SiC, one particular vacancy defects appearing after annealing of isolated silicon vacancies have dangling bonds along the c-axis. From the enhancement of positron annihilation probability with carbon 1s electrons, the above defects are attributed to carbon-vacancy-antisite-carbon complexes.

Journal Articles

Electron-positron momentum distributions associated with isolated silicon vacancies in 3C-SiC

Kawasuso, Atsuo; Yoshikawa, Masahito; Ito, Hisayoshi; Chiba, Toshinobu*; Higuchi, Takatoshi*; Betsuyaku, Kiyoshi*; Redmann, F.*; Krause-Rehberg, R.*

Physical Review B, 72(4), p.045204_1 - 045204_6, 2005/07

 Times Cited Count:15 Percentile:55.49(Materials Science, Multidisciplinary)

Two-dimensional angular correlation of annihilation radiation (2D-ACAR) and coincidence Doppler broadening (CDB) of annihilation radiation measurements have been performed on electron-irradiated n-type 3C SiC in which isolated silicon vacancies are responsible for positron trapping. After irradiation, the intensity of CDB spectrum increased and decreased in low and high momentum regions, respectively. These fetures were explained by the theoretical calculation considering silicon vacancies. The center region of 2D-ACAR spectra became isotropic after iradiation, while the overall anisotropies extending within the Jones zone were conserved suggesting that isolated silicon vacancies have the tetrahedral symmetry as expected from the previous electron spin resonance study.

Journal Articles

Vacancy defects detected by positron annihilation

Kawasuso, Atsuo; Weidener, M.*; Redmann, F.*; Frank, T.*; Sperr, P.*; K$"o$gel, G.*; Yoshikawa, Masahito; Ito, Hisayoshi; Krause-Rehberg, R.*; Triftsh$"a$user, W.*; et al.

Silicon Carbide, p.563 - 584, 2004/00

no abstracts in English

Journal Articles

Polytype-dependent vacancy annealing studied by positron annihilation

Kawasuso, Atsuo; Yoshikawa, Masahito; Maekawa, Masaki; Ito, Hisayoshi; Chiba, Toshinobu*; Redmann, F.*; Rehberg, R. K.*; Weidner, M.*; Frank, T.*; Pensl, G.*

Materials Science Forum, 433-436, p.477 - 480, 2003/08

no abstracts in English

Journal Articles

Radiation-induced defects in 4H- and 6H-SiC epilayers studies by positron annihilation and deep-level transient spectroscopy

Kawasuso, Atsuo; Weidner, M.*; Redmann, F.*; Frank, T.*; Krause-Rehberg, R.*; Pensl, G.*; Sperr, P.*; Triftsh$"a$user, W.*; Ito, Hisayoshi

Materials Science Forum, 389-393, p.489 - 492, 2002/05

no abstracts in English

Journal Articles

Annealing behavior of vacancies and Z$$_{1/2}$$ levels in electron-irradiated 4H-SiC studied by positron annihilation and deep-level transient spectroscopy

Kawasuso, Atsuo; Redmann, F.*; Krause-Rehberg, R.*; Weidner, M.*; Frank, T.*; Pensl, G.*; Sperr, P.*; Triftsh$"a$user, W.*; Ito, Hisayoshi

Applied Physics Letters, 79(24), p.3950 - 3952, 2001/12

 Times Cited Count:38 Percentile:80.13(Physics, Applied)

no abstracts in English

Journal Articles

Illumination effects in irradiated 6H n-type SiC observed by positron annihilation spectroscopy

Redmann, F.*; Kawasuso, Atsuo; Petters, K.*; Ito, Hisayoshi; Krause-Rehberg, R.*

Physica B; Condensed Matter, 308-310, p.629 - 632, 2001/12

 Times Cited Count:3 Percentile:23.01(Physics, Condensed Matter)

no abstracts in English

Journal Articles

Vacancies in He-implanted 4H and 6H SiC epilayers studied by positron annihilation

Kawasuso, Atsuo; Weidner, M.*; Redmann, F.*; Frank, T.*; Sperr, P.*; Krause-Rehberg, R.*; Triftsh$"a$user, W.*; Pensl, G.*

Physica B; Condensed Matter, 308-310, p.660 - 663, 2001/12

 Times Cited Count:13 Percentile:58.99(Physics, Condensed Matter)

no abstracts in English

Journal Articles

Vacancies and deep levels in electron-irradiated 6${it H}$ SiC epilayers studied by positron annihilation and deep level transient spectroscopy

Kawasuso, Atsuo; Redmann, F.*; Krause-Rehberg, R.*; Frank, T.*; Weidner, M.*; Pensl, G.*; Sperr, P.*; Ito, Hisayoshi

Journal of Applied Physics, 90(7), p.3377 - 3382, 2001/10

 Times Cited Count:42 Percentile:82.13(Physics, Applied)

no abstracts in English

Journal Articles

Effects of illumination on positron lifetime of electron irradiated n-type 6H-SiC

Redmann, F.*; Kawasuso, Atsuo; Petters, K.*; Krause-Rehberg, R.*; Ito, Hisayoshi

Materials Science Forum, 363-365, p.126 - 128, 2001/05

no abstracts in English

Journal Articles

Positron annihilation due to silicon vacancies in 3C and 6H SiC epitaxial layers induced by 1MeV electron irradiation

Kawasuso, Atsuo; Redmann, F.*; Krause-Rehberg, R.*; Yoshikawa, Masahito; Kojima, Kazutoshi; Ito, Hisayoshi

Physica Status Solidi (B), 223(2), p.R8 - R10, 2001/01

no abstracts in English

Journal Articles

Annealing process of defects in epitaxial SiC induced by He and electron irradiation; Positron annihilation study

Kawasuso, Atsuo; Redmann, F.*; Krause-Rehberg, R.*; Sperr, P.*; Frank, T.*; Weidner, M.*; Pensl, G.*; Ito, Hisayoshi

Materials Science Forum, 353-356, p.537 - 540, 2001/00

no abstracts in English

12 (Records 1-12 displayed on this page)
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