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Journal Articles

Deep defects in 3C-SiC generated by H$$^{+}$$- and He$$^{+}$$-implantation or by irradiation with high-energy electrons

Weidner, M.*; Trapaidze, L.*; Pensl, G.*; Reshanov, S. A.*; Sch$"o$ner, A.*; Ito, Hisayoshi; Oshima, Takeshi; Kimoto, Tsunenobu*

Materials Science Forum, 645-648, p.439 - 442, 2010/00

Intrinsic defects in 3C-SiC generated by implantation of H$$^{+}$$ and He$$^{+}$$ ions or by irradiation of high energy electrons were investigated using DLTS (Deep Level Transient Spectroscopy). The defect parameters and the thermal stability of the observed defects are determined. The dominant DLTS peak was named W6-center and its capture-cross-section was directly measured by variation of the filling pulse length. The charge state of the W6-center is obtained from double-correlated DLTS investigations according to the Poole-Frenkel effect.

Journal Articles

Thermal stability of defects centers in n- and p-type 4H-SiC epilayers generated by irradiation with high-energy electrons

Reshanov, S. A.*; Beljakowa, S.*; Zippelius, B.*; Pensl, G.*; Danno, Katsunori*; Alfieri, G.*; Kimoto, Tsunenobu*; Onoda, Shinobu; Oshima, Takeshi; Yan, F.*; et al.

Materials Science Forum, 645-648, p.423 - 426, 2010/00

n- and p-type 4H-SiC epilayers were irradiated with electrons at 170 keV or 1 MeV. Subsequent annealing (in Ar, 30 min) up to 1700 $$^{circ}$$C was carried out. Defects in the samples were investigated using DLTS (Deep Level Transient Spectroscopy). As a results, for n-type, dominant defects were Z1/Z2 and EH7, and they can observed for both 170 keV- and 1 MeV-irradiated samples. Both defects decreased with increasing temperature up to 1100 $$^{circ}$$C, although they appeared again at 1400 $$^{circ}$$C. Then they disappeared at 1600 $$^{circ}$$C. For p-type, defects named UK1 and HK2 were observed and they were very stable. No significant decrease was observed after 1700 $$^{circ}$$C annealing.

Journal Articles

Thermal histories of defect centers as measured by low temperature photoluminescence in n- and p-type 4H SiC epilayers generated by irradiation with 170 KeV or 1 MeV electrons

Yan, F.*; Devaty, R. P.*; Choyke, W. J.*; Danno, Katsunori*; Alfieri, G.*; Kimoto, Tsunenobu*; Onoda, Shinobu; Oshima, Takeshi; Reshanov, S. A.*; Beljakowa, S.*; et al.

Materials Science Forum, 645-648, p.419 - 422, 2010/00

Defects in n- and p-type 4H-SiC epitaxial layer were investigated by low temperature photoluminescence spectroscopy (LTPL) and deep level transient spectroscopy (DLTS). Defects were introduced by either 170 keV or 1 MeV electron irradiation into samples at RT. The samples were annealed from 25$$^{circ}$$C to 1700$$^{circ}$$C in 100$$^{circ}$$C steps. As a result of LTPL measurements, L$$_{1}$$ line was observed after irradiation. In previous studies, L$$_{1}$$ line is thought to correlate with Z$$_{1}$$/Z$$_{2}$$ centers in DLTS measurements. However, in this study, no correlation between L$$_{1}$$ and Z$$_{1}$$1/Z$$_{2}$$ was observed.

Journal Articles

Shallow defects observed in as-grown and electron-irradiated or He$$^{+}$$-implnated Al-doped 4H-SiC epilayers

Beljakowa, S.*; Reshanov, S. A.*; Zippelius, B.*; Krieger, M.*; Pensl, G.*; Danno, Katsunori*; Kimoto, Tsunenobu*; Onoda, Shinobu; Oshima, Takeshi; Yan, F.*; et al.

Materials Science Forum, 645-648, p.427 - 430, 2010/00

Defects in Al-doped p-type 4H-SiC were investigated using admittance spectroscopy (AS). Also, defects in 4H-SiC irradiated with electrons and He ions were studied using AS. As a result, a shallow level with activation energy at 170 meV was found and is has the capture cross section of 3.5$$times$$10$$^{-16}$$/cm$$^{2}$$ which is extremely low value. The concentration of the defect did not change even after electron and He irradiations. Also, the defect can be found after annealing at 1800 $$^{circ}$$C. Therefore, we can conclude that the defect is a very stable intrinsic defect in SiC.

Journal Articles

Reduction of interface traps and enhancement of channel mobility in n-channel 6H-SiC MOSFETs by irradiation with $$gamma$$-rays

Hishiki, Shigeomi; Reshanov, S. A.*; Oshima, Takeshi; Ito, Hisayoshi; Pensl, G.*

Materials Science Forum, 600-603, p.703 - 706, 2009/00

https://doi.org/10.4028/www.scientific.net/MSF.600-603.703
 Times Cited Count：1 Percentile：47.43(Materials Science, Ceramics)

N-channel 6H-SiC MOSFETs has been investigated radiation effect. The MOSFETs were irradiated by $$gamma$$-rays up to 3.16 MGy(SiO$$_{2}$$) at room temperature. The electrical characteristic was estimated by Hall effect measurement and current vs. voltage measurement. The $$gamma$$-rays irradiated MOSFETs were observed that channel mobility increased due to decrease interface traps.

Journal Articles

Electrical characteristics of 6H-SiC MOSFETs after high dose irradiation

Oshima, Takeshi; Hishiki, Shigeomi*; Iwamoto, Naoya; Reshanov, S. A.*; Pensl, G.*; Kojima, Kazutoshi*; Kawano, Katsuyasu*

Proceedings of the 26th Symposium on Materials Science and Engineering, Research Center of Ion Beam Technology Hosei University, p.31 - 34, 2007/12

no abstracts in English

Journal Articles

(Nitrogen/vacancy)-complex formation in SiC; Experiment and theory

Pensl, G.*; Schmid, F.*; Reshanov, S.*; Weber, H. B.*; Bockstedte, M.*; Mattausch, A.*; Pankratov, O.*; Oshima, Takeshi; Ito, Hisayoshi

Materials Science Forum, 556-557, p.307 - 312, 2007/00

no abstracts in English

Journal Articles

Deactivation of nitrogen donors in silicon carbide

Schmid, F.*; Reshanov, S. A.*; Weber, H. B.*; Pensl, G.*; Bockstedte, M.*; Mattausch, A.*; Pankratov, O.*; Oshima, Takeshi; Ito, Hisayoshi

Physical Review B, 74(24), p.245212_1 - 245212_11, 2006/12

https://doi.org/10.1103/PhysRevB.74.245212
 Times Cited Count：11 Percentile：47.25(Materials Science, Multidisciplinary)

Hexagonal SiC is co-implanted with silicon Si$$^{+}$$, carbon C$$^{+}$$, or neon Ne$$^{+}$$ ions along with nitrogen N$$^{+}$$ ions. Also hexagonal SiC irradiated with electrons e$$^{-}$$ of 200 keV energy. During the subsequent annealing step at temperatures above 1450 $$^{circ}$$C a deactivation of N donors and a reduction of the compensation are observed in the case of the Si$$^{+}$$/N$$^{+}$$ co-implantation and e$$^{-}$$ irradiation. Using Hall measurement, the N donor deactivation is studied as a function of the concentration of the co-implanted species and the annealing temperature. The formation of energetically deep defects is analyzed with deep level transient spectroscopy. A detailed theoretical analysis based on the density functional theory is conducted; it takes into account the kinetic mechanisms for the formation of N interstitial clusters and N-vacancy complexes. In accordance with all the experimental results, this analysis distinctly indicates that the (N$$ _{C}$$)$$_ {4}$$-V$$_{Si}$$ complex, which is thermally stable at high temperatures, is responsible for the N donor deactivation.

Journal Articles

Defect-engineering in SiC by ion implantation and electron irradiation

Pensl, G.*; Ciobanu, F.*; Frank, T.*; Kirmse, D.*; Krieger, M.*; Reshanov, S.*; Schmid, F.*; Weidner, M.*; Oshima, Takeshi; Ito, Hisayoshi; et al.

Microelectronic Engineering, 83(1), p.146 - 149, 2006/01

https://doi.org/10.1016/j.mee.2005.10.040
 Times Cited Count：15 Percentile：59.32(Engineering, Electrical & Electronic)

no abstracts in English

Oral presentation

Shallow and deep defect levels in SiC

Pensl, G.*; Frank, T.*; Reshanov, S.*; Schmid, F.*; Weidner, M.*; Oshima, Takeshi; Ito, Hisayoshi

no journal, , 

no abstracts in English

Oral presentation

Channel mobility in n-channel 6H-SiC MOSFETs irradiated at high $$gamma$$-ray dose

Oshima, Takeshi; Hishiki, Shigeomi*; Iwamoto, Naoya; Reshanov, S. A.*; Pensl, G.*; Kojima, Kazutoshi*; Kawano, Katsuyasu*

no journal, , 

no abstracts in English

11 (Records 1-11 displayed on this page)
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