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Journal Articles

Ion channeling study of epitaxy of iron based Heusler alloy films on Ge(111)

Maeda, Yoshihito; Narumi, Kazumasa; Sakai, Seiji; Terai, Yoshikazu*; Hamaya, Kohei*; Sado, Taizo*; Miyao, Masanobu*

Thin Solid Films, 519(24), p.8461 - 8467, 2011/10

 Times Cited Count:7 Percentile:34.63(Materials Science, Multidisciplinary)

Journal Articles

Axial orientation of molecular-beam-epitaxy-grown Fe$$_{3}$$Si/Ge hybrid structures and its degradation

Maeda, Yoshihito; Jonishi, Takafumi*; Narumi, Kazumasa; Ando, Yuichiro*; Ueda, Koji*; Kumano, Mamoru*; Sado, Taizo*; Miyao, Masanobu*

Applied Physics Letters, 91(17), p.171910_1 - 171910_3, 2007/10

 Times Cited Count:31 Percentile:74.06(Physics, Applied)

The axial orientation of molecular-beam-epitaxy (MBE)-grown Fe$$_{3}$$Si(111)/Ge(111) hybrid structures was investigated by Rutherford backscattering spectroscopy. We confirmed that during MBE above 300$$^{circ}$$C, the interdiffusion of Fe and Ge atoms results in a composition change and the epitaxial growth of FeGe in Fe$$_{3}$$Si. Low-temperature ($$<$$200 $$^{circ}$$C) MBE can realize fully ordered DO$$_{3}$$-Fe$$_{3}$$Si with highly axial orientation [minimum yield ($$chi$$$$_{min}$$)=2.2%]. Postannealing above 400 $$^{circ}$$C results in a composition change and the degradation of axial orientation in the off-stoichiometric Fe$$_{3}$$Si. The significance of stoichiometry with regard to thermal stability and the interfacial quality of Fe$$_{3}$$Si(111)/Ge(111) hybrid structures was also discussed.

Journal Articles

Low temperature hetero-epitaxy of ferromagnetic silicide on Ge substrates for spin-transistor application

Ando, Yuichiro*; Ueda, Koji*; Kumano, Mamoru*; Sado, Taizo*; Narumi, Kazumasa; Maeda, Yoshihito; Miyao, Masanobu*

Shingaku Giho, 107(111), p.221 - 224, 2007/06

Ferromagnetic silicide Fe$$_{3}$$Si (Currie temperature: 840 K) has three phases (A2, B2, and DO3), where the DO3-type is an ordered phase and calculated to be spin-polarized at the Fermi level. In addition, the lattice constant (0.565 nm) of Fe$$_{3}$$Si is almost completely equal to that (0.565 nm) of Ge. Therefore, atomically controlled epitaxial growth of Fe$$_{3}$$Si is expected on Ge. This will be a powerful tool to realize Ge channel spin transistors with ultrahigh speed operation and ultralow power consumption. This paper reviews our recent progress in novel epitaxial growth of Fe$$_{3}$$Si on Ge for spintronics application.

Journal Articles

Low-temperature epitaxial growth of [Fe$$_{3}$$Si/SiGe]$$_{n}$$ (n = 1-2) multi-layered structures for spintronics application

Sado, Taizo*; Ueda, Koji*; Ando, Yuichiro*; Kumano, Mamoru*; Narumi, Kazumasa; Maeda, Yoshihito; Miyao, Masanobu*

ECS Transactions, 11(6), p.473 - 479, 2007/00

Our recent progresses in epitaxial growth of Fe$$_{3}$$Si on Ge substrates are reviewed. Single crystalline Fe$$_{3}$$Si layers with atomically flat interfaces were achieved on Ge(111) substrates by optimizing growth conditions at low temperatures (60$$sim$$200 $$^{circ}$$C). Thermal stability of it was guaranteed up to 400 $$^{circ}$$C. In addition, epitaxial growth of mixed layers composed of Fe$$_{3}$$Si, FeGe, and FeSi on Ge substrates at 400 $$^{circ}$$C is reported. Finally, epitaxial growth of Fe$$_{3}$$Si/Ge/Fe$$_{3}$$Si/Ge structures is discussed. These results will be a powerful tool to open up SiGe related spintronics.

Journal Articles

Effect of Fe/Si ratio on epitaxial growth of Fe$$_{3}$$Si on Ge substrate

Kumano, Mamoru*; Ando, Yuichiro*; Ueda, Koji*; Sado, Taizo*; Narumi, Kazumasa; Maeda, Yoshihito; Miyao, Masanobu*

ECS Transactions, 11(6), p.481 - 485, 2007/00

The effects of the Fe/Si ratios on molecular beam epitaxy (MBE) of Fe$$_{3}$$Si on Ge substrate have been investigated in a wide range of growth temperatures (60$$sim$$300 $$^{circ}$$C). From XRD measurements, it was found that Fe$$_{3}$$Si layers were epitaxially grown on Ge(111) substrates at 60$$sim$$200 $$^{circ}$$C under the stoichiometric (Fe:Si = 3:1) and non-stoichiometric (Fe:Si = 4:1) conditions. From RBS measurement, it was found that atomic mixing of Fe and Ge at Fe$$_{3}$$Si/Ge interfaces began at a growth temperature of 300 $$^{circ}$$C. In the case of MBE under the stoichiometric condition, the crystallinity of Fe$$_{3}$$Si is significantly improved compared to the non-stoichiometric condition. As a result, very low $$chi$$$$_{min}$$ was obtained in a wide temperature (60$$sim$$200 $$^{circ}$$C) under the stoichiometric condition. From the transmission electron microscopy measurements, it was shown that high-quality DO3-type Fe$$_{3}$$Si/Ge structures with atomically flat interfaces were realized at a low temperature ($$sim$$200 $$^{circ}$$C) under the stoichiometric condition.

Oral presentation

Low temperature ion channeling at interface of iron Heusler alloy films/Ge(111)

Matsukura, Bui*; Nakajima, Takahito*; Maeda, Yoshihito; Narumi, Kazumasa; Terai, Yoshikazu*; Sado, Taizo*; Hamaya, Kohei*; Miyao, Masanobu*

no journal, , 

no abstracts in English

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