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Journal Articles

LET dependence of single event transient pulse-widths in SOI logic cell

Makino, Takahiro*; Kobayashi, Daisuke*; Hirose, Kazuyuki*; Yanagawa, Yoshimitsu*; Saito, Hirobumi*; Ikeda, Hirokazu*; Takahashi, Daisuke*; Ishii, Shigeru*; Kusano, Masaki*; Onoda, Shinobu; et al.

IEEE Transactions on Nuclear Science, 56(1), p.202 - 207, 2009/02

 Times Cited Count:35 Percentile:90.28(Engineering, Electrical & Electronic)

SET pulse-widths were measured as a function of LET by using pulse capture circuits and were simulated with mixed-mode 3-D device simulations. We found that the carrier recombination process dominates LET dependence of SET pulse-widths.

Journal Articles

Radiation-induced transient-pulses in logic LSIs for use in space applications

Makino, Takahiro*; Yanagawa, Yoshimitsu*; Kobayashi, Daisuke*; Fukuda, Seisuke*; Hirose, Kazuyuki*; Ikeda, Hirokazu*; Saito, Hirobumi*; Onoda, Shinobu; Hirao, Toshio; Oshima, Takeshi; et al.

Shingaku Giho, 108(100), p.67 - 72, 2008/06

SET pulse-widths were measured as a function of LET by using pulse capture circuits. In addition, a scan flip-flop (FF) is designed to observe both single event transient (SET) and single event upset (SEU) soft errors in logic VLSI system.

Oral presentation

LET dependence of single event transient pulse-widths in SOI logic cell

Makino, Takahiro*; Kobayashi, Daisuke*; Hirose, Kazuyuki*; Yanagawa, Yoshimitsu*; Saito, Hirobumi*; Ikeda, Hirokazu*; Takahashi, Daisuke*; Ishii, Shigeru*; Kusano, Masaki*; Onoda, Shinobu; et al.

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no abstracts in English

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