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Journal Articles

Temperature of thermal spikes in amorphous silicon nitride films produced by 1.11 MeV C$$_{60}^{3+}$$ impacts

Kitayama, Takumi*; Nakajima, Kaoru*; Suzuki, Motofumi*; Narumi, Kazumasa; Saito, Yuichi; Matsuda, Makoto; Sataka, Masao*; Tsujimoto, Masahiko*; Isoda, Shoji*; Kimura, Kenji*

Nuclear Instruments and Methods in Physics Research B, 354, p.183 - 186, 2015/07

 Times Cited Count:2 Percentile:17.75(Instruments & Instrumentation)

Journal Articles

Sputtering of SiN films by 540 keV C$$_{60}$$$$^{2+}$$ ions observed using high-resolution Rutherford backscattering spectroscopy

Nakajima, Kaoru*; Morita, Yosuke*; Kitayama, Takumi*; Suzuki, Motofumi*; Narumi, Kazumasa; Saito, Yuichi; Tsujimoto, Masahiko*; Isoda, Shoji*; Fujii, Yoshikazu*; Kimura, Kenji*

Nuclear Instruments and Methods in Physics Research B, 332, p.117 - 121, 2014/08

 Times Cited Count:7 Percentile:48.56(Instruments & Instrumentation)

Journal Articles

Transmission secondary ion mass spectrometry using 5 MeV C$$_{60}$$$$^{+}$$ ions

Nakajima, Kaoru*; Nagano, Kengo*; Suzuki, Motofumi*; Narumi, Kazumasa; Saito, Yuichi; Hirata, Koichi*; Kimura, Kenji*

Applied Physics Letters, 104(11), p.114103_1 - 114103_4, 2014/03

 Times Cited Count:6 Percentile:26.98(Physics, Applied)

Journal Articles

Surface effect on ion track formation in amorphous Si$$_{3}$$N$$_{4}$$ films

Morita, Yosuke*; Nakajima, Kaoru*; Suzuki, Motofumi*; Narumi, Kazumasa; Saito, Yuichi; Ishikawa, Norito; Hojo, Kiichi; Tsujimoto, Masahiko*; Isoda, Shoji*; Kimura, Kenji*

Nuclear Instruments and Methods in Physics Research B, 315, p.142 - 145, 2013/11

 Times Cited Count:12 Percentile:69.84(Instruments & Instrumentation)

Journal Articles

Cluster effect on projected range of 30-keV C$$_{60}$$$$^{+}$$ in silicon

Morita, Yosuke*; Nakajima, Kaoru*; Suzuki, Motofumi*; Narumi, Kazumasa; Saito, Yuichi; Kimura, Kenji*

JAEA-Review 2012-046, JAEA Takasaki Annual Report 2011, P. 167, 2013/01

no abstracts in English

Journal Articles

Direct observation of fine structure in ion tracks in amorphous Si$$_{3}$$N$$_{4}$$ by TEM

Nakajima, Kaoru*; Morita, Yosuke*; Suzuki, Motofumi*; Narumi, Kazumasa; Saito, Yuichi; Ishikawa, Norito; Hojo, Kiichi; Tsujimoto, Masahiko*; Isoda, Shoji*; Kimura, Kenji*

Nuclear Instruments and Methods in Physics Research B, 291, p.12 - 16, 2012/11

 Times Cited Count:15 Percentile:73.69(Instruments & Instrumentation)

Thin films of amorphous Si$$_{3}$$N$$_{4}$$ (thickness 20 nm) were irradiated with 120-720 keV C$$_{60}$$$$^{+,2+}$$ ions and observed using transmission electron microscopy (TEM). The ion track produced in an amorphous material was directly observed by TEM. For quantitative analysis, the ion tracks were also observed using high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM). The observed ion track consists of a low density core (radius $$sim$$2.5 nm) and a high density shell (width $$sim$$2.5 nm), which is very similar to the ion tracks in amorphous SiO$$_{2}$$ irradiated with high energy heavy ions observed by small angle X-ray scattering (SAXS). Although the observed ion tracks may be affected by surface effects, the present result indicates that TEM and HAADF-STEM have potential to observe directly the fine structures of ion tracks in amorphous materials.

Journal Articles

Cluster effect on projected range of 30 keV C$$_{60}$$$$^{+}$$ in silicon

Morita, Yosuke*; Nakajima, Kaoru*; Suzuki, Motofumi*; Narumi, Kazumasa; Saito, Yuichi; Vandervorst, W.*; Kimura, Kenji*

Nuclear Instruments and Methods in Physics Research B, 269(19), p.2080 - 2083, 2011/10

 Times Cited Count:6 Percentile:44.45(Instruments & Instrumentation)

Pre-amorphized silicon wafers are implanted with 30 keV C$$_{60}$$$$^{+}$$ and 0.5 keV C$$^{+}$$ ions at room temperature with fluences about 2$$times$$10$$^{15}$$ atoms/cm$$^{2}$$. The depth profiles of implanted carbon are measured using high-resolution Rutherford backscattering spectroscopy. The observed average depth of C for the C$$_{60}$$$$^{+}$$ implantation is 6.1 nm while that for the C$$^{+}$$ implantation is 4.0 nm, showing a large cluster effect on the projected range.

Journal Articles

Bias temperature instability characterization of advanced gate stacks

Fujieda, Shinji*; Terai, Masayuki*; Saito, Motofumi*; Toda, Akio*; Miura, Yoshinao*; Liu, Z.*; Teraoka, Yuden; Yoshigoe, Akitaka; Wilde, M.*; Fukutani, Katsuyuki*

ECS Transactions, 6(3), p.185 - 202, 2007/00

In order to find how bias temperature instability occurs in advanced gate stacks, we will review experimental results of our investigation on SiO$$_{2}$$, plasma-nitrided SiON, HfSiON and HfSiON with Ni-silicide electrodes. It thus seems that we need to clarify and control the chemical and physical influences on the insulator bulk and the insulator/Si interface caused by newly incorporated materials and process technologies, in order to ensure the reliability of bias temperature instability for advanced gate stacks.

Journal Articles

Characterization of interface defects related to negative-bias temperature instability in ultrathin plasma-nitrided SiON/Si$$<$$100$$>$$ systems

Fujieda, Shinji*; Miura, Yoshinao*; Saito, Motofumi*; Teraoka, Yuden; Yoshigoe, Akitaka

Microelectronics Reliability, 45(1), p.57 - 64, 2005/01

 Times Cited Count:11 Percentile:51.41(Engineering, Electrical & Electronic)

To characterize the interface defects that are responsible for the negative-bias temperature instability (NBTI) of a thin plasma-nitrided SiON/Si system, we carried out inerface trap density measurements, electron-spin resonance spectroscopy and synchrotron radiation XPS. The NBTI was shown to occur mainly through the dehydrogenation of the interfacial Si dangling bonds (P$$_{b}$$ defects). Although we suggest that non- P$$_{b}$$ defects are also generated by the negative-bias temperature stress, nitrogen dangling bonds do not seem to be included. The plasma-nitridation process was confirmed to generate sub-oxides at the interface and thus increase the interface trap density. Furthermore, it was found that the nitridation induces another type of P$$_{b1}$$ defect than that at pure-SiO$$_{2}$$/Si interfacec. Such an increase and structural change of the interfacial defects are likely the causes of the nitridation-enhanced NBTI.

Oral presentation

TEM observation of ion tracks in amorphous Si$$_{3}$$N$$_{4}$$ produced by irradiation with several 100's keV C$$_{60}$$ ions

Morita, Yosuke*; Nakajima, Kaoru*; Suzuki, Motofumi*; Kimura, Kenji*; Narumi, Kazumasa; Saito, Yuichi; Tsujimoto, Masahiko*; Isoda, Shoji*

no journal, , 

no abstracts in English

Oral presentation

Cluster effect on projected range of 30-keV C$$_{60}$$ ions in Si

Morita, Yosuke*; Nakajima, Kaoru*; Suzuki, Motofumi*; Kimura, Kenji*; Narumi, Kazumasa; Saito, Yuichi

no journal, , 

no abstracts in English

Oral presentation

Direct observation of fine structure in ion tracks in amorphous thin films by TEM

Morita, Yosuke*; Nakajima, Kaoru*; Suzuki, Motofumi*; Kimura, Kenji*; Narumi, Kazumasa; Saito, Yuichi; Ishikawa, Norito; Hojo, Kiichi; Tsujimoto, Masahiko*; Isoda, Shoji*

no journal, , 

no abstracts in English

Oral presentation

HAADF-STEM observation of ion tracks in amorphous Si$$_{3}$$N$$_{4}$$ thin films

Morita, Yosuke*; Nakajima, Kaoru*; Suzuki, Motofumi*; Kimura, Kenji*; Narumi, Kazumasa; Saito, Yuichi; Tsujimoto, Masahiko*; Isoda, Shoji*

no journal, , 

no abstracts in English

Oral presentation

Forward emission of secondary ions from phenylalanine films on SiN membranes penetrated by MeV Cu$$^{4+}$$ and C$$_{60}$$$$^{+}$$ from the backside

Nagano, Kengo*; Nakajima, Kaoru*; Suzuki, Motofumi*; Kimura, Kenji*; Narumi, Kazumasa; Saito, Yuichi

no journal, , 

no abstracts in English

Oral presentation

Thickness dependence of length of ion tracks induced in amorphous SiN membranes by bombardment of C$$_{60}$$ ions

Nakajima, Kaoru*; Morita, Yosuke*; Kitayama, Takumi*; Suzuki, Motofumi*; Kimura, Kenji*; Narumi, Kazumasa; Saito, Yuichi; Tsujimoto, Masahiko*; Isoda, Shoji*

no journal, , 

no abstracts in English

Oral presentation

Direct observation of ion tracks in amorphous insulator thin films with transmission electron microscopy

Nakajima, Kaoru*; Morita, Yosuke*; Kitayama, Takumi*; Suzuki, Motofumi*; Kimura, Kenji*; Narumi, Kazumasa; Saito, Yuichi; Ishikawa, Norito; Hojo, Kiichi; Tsujimoto, Masahiko*; et al.

no journal, , 

no abstracts in English

Oral presentation

Fast-C$$_{60}$$$$^{+}$$-ion-transimission-induced secondary-ion forward emissions from amino acids on SiN thin films

Nagano, Kengo*; Nakajima, Kaoru*; Suzuki, Motofumi*; Kimura, Kenji*; Narumi, Kazumasa; Saito, Yuichi

no journal, , 

no abstracts in English

Oral presentation

Forward emission of secondary ions from phenylalanine films on SiN membrane penetrated by swift C$$_{60}$$$$^{+}$$ from the backside

Nagano, Kengo*; Nakajima, Kaoru*; Suzuki, Motofumi*; Kimura, Kenji*; Narumi, Kazumasa; Saito, Yuichi

no journal, , 

no abstracts in English

Oral presentation

Sputtering of amorphous SiN induced by 540 keV C$$_{60}$$$$^{2+}$$ irradiation

Kitayama, Takumi*; Morita, Yosuke*; Nakajima, Kaoru*; Suzuki, Motofumi*; Kimura, Kenji*; Narumi, Kazumasa; Saito, Yuichi; Matsuda, Makoto; Sataka, Masao*; Tsujimoto, Masahiko*; et al.

no journal, , 

no abstracts in English

Oral presentation

Transmission secondary ion mass spectrometry of phenylalanine on silicon nitride membranes using MeV monoatomic and cluster ions

Nakajima, Kaoru*; Nagano, Kengo*; Suzuki, Motofumi*; Narumi, Kazumasa; Saito, Yuichi; Hirata, Koichi*; Kimura, Kenji*

no journal, , 

23 (Records 1-20 displayed on this page)