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Kitayama, Takumi*; Nakajima, Kaoru*; Suzuki, Motofumi*; Narumi, Kazumasa; Saito, Yuichi; Matsuda, Makoto; Sataka, Masao*; Tsujimoto, Masahiko*; Isoda, Shoji*; Kimura, Kenji*
Nuclear Instruments and Methods in Physics Research B, 354, p.183 - 186, 2015/07
Times Cited Count:2 Percentile:17.75(Instruments & Instrumentation)Nakajima, Kaoru*; Morita, Yosuke*; Kitayama, Takumi*; Suzuki, Motofumi*; Narumi, Kazumasa; Saito, Yuichi; Tsujimoto, Masahiko*; Isoda, Shoji*; Fujii, Yoshikazu*; Kimura, Kenji*
Nuclear Instruments and Methods in Physics Research B, 332, p.117 - 121, 2014/08
Times Cited Count:7 Percentile:48.56(Instruments & Instrumentation)Nakajima, Kaoru*; Nagano, Kengo*; Suzuki, Motofumi*; Narumi, Kazumasa; Saito, Yuichi; Hirata, Koichi*; Kimura, Kenji*
Applied Physics Letters, 104(11), p.114103_1 - 114103_4, 2014/03
Times Cited Count:6 Percentile:26.98(Physics, Applied)Morita, Yosuke*; Nakajima, Kaoru*; Suzuki, Motofumi*; Narumi, Kazumasa; Saito, Yuichi; Ishikawa, Norito; Hojo, Kiichi; Tsujimoto, Masahiko*; Isoda, Shoji*; Kimura, Kenji*
Nuclear Instruments and Methods in Physics Research B, 315, p.142 - 145, 2013/11
Times Cited Count:12 Percentile:69.84(Instruments & Instrumentation)Morita, Yosuke*; Nakajima, Kaoru*; Suzuki, Motofumi*; Narumi, Kazumasa; Saito, Yuichi; Kimura, Kenji*
JAEA-Review 2012-046, JAEA Takasaki Annual Report 2011, P. 167, 2013/01
no abstracts in English
Nakajima, Kaoru*; Morita, Yosuke*; Suzuki, Motofumi*; Narumi, Kazumasa; Saito, Yuichi; Ishikawa, Norito; Hojo, Kiichi; Tsujimoto, Masahiko*; Isoda, Shoji*; Kimura, Kenji*
Nuclear Instruments and Methods in Physics Research B, 291, p.12 - 16, 2012/11
Times Cited Count:15 Percentile:73.69(Instruments & Instrumentation)Thin films of amorphous SiN (thickness 20 nm) were irradiated with 120-720 keV C ions and observed using transmission electron microscopy (TEM). The ion track produced in an amorphous material was directly observed by TEM. For quantitative analysis, the ion tracks were also observed using high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM). The observed ion track consists of a low density core (radius 2.5 nm) and a high density shell (width 2.5 nm), which is very similar to the ion tracks in amorphous SiO irradiated with high energy heavy ions observed by small angle X-ray scattering (SAXS). Although the observed ion tracks may be affected by surface effects, the present result indicates that TEM and HAADF-STEM have potential to observe directly the fine structures of ion tracks in amorphous materials.
Morita, Yosuke*; Nakajima, Kaoru*; Suzuki, Motofumi*; Narumi, Kazumasa; Saito, Yuichi; Vandervorst, W.*; Kimura, Kenji*
Nuclear Instruments and Methods in Physics Research B, 269(19), p.2080 - 2083, 2011/10
Times Cited Count:6 Percentile:44.45(Instruments & Instrumentation)Pre-amorphized silicon wafers are implanted with 30 keV C and 0.5 keV C ions at room temperature with fluences about 210 atoms/cm. The depth profiles of implanted carbon are measured using high-resolution Rutherford backscattering spectroscopy. The observed average depth of C for the C implantation is 6.1 nm while that for the C implantation is 4.0 nm, showing a large cluster effect on the projected range.
Fujieda, Shinji*; Terai, Masayuki*; Saito, Motofumi*; Toda, Akio*; Miura, Yoshinao*; Liu, Z.*; Teraoka, Yuden; Yoshigoe, Akitaka; Wilde, M.*; Fukutani, Katsuyuki*
ECS Transactions, 6(3), p.185 - 202, 2007/00
In order to find how bias temperature instability occurs in advanced gate stacks, we will review experimental results of our investigation on SiO, plasma-nitrided SiON, HfSiON and HfSiON with Ni-silicide electrodes. It thus seems that we need to clarify and control the chemical and physical influences on the insulator bulk and the insulator/Si interface caused by newly incorporated materials and process technologies, in order to ensure the reliability of bias temperature instability for advanced gate stacks.
Fujieda, Shinji*; Miura, Yoshinao*; Saito, Motofumi*; Teraoka, Yuden; Yoshigoe, Akitaka
Microelectronics Reliability, 45(1), p.57 - 64, 2005/01
Times Cited Count:11 Percentile:51.41(Engineering, Electrical & Electronic)To characterize the interface defects that are responsible for the negative-bias temperature instability (NBTI) of a thin plasma-nitrided SiON/Si system, we carried out inerface trap density measurements, electron-spin resonance spectroscopy and synchrotron radiation XPS. The NBTI was shown to occur mainly through the dehydrogenation of the interfacial Si dangling bonds (P defects). Although we suggest that non- P defects are also generated by the negative-bias temperature stress, nitrogen dangling bonds do not seem to be included. The plasma-nitridation process was confirmed to generate sub-oxides at the interface and thus increase the interface trap density. Furthermore, it was found that the nitridation induces another type of P defect than that at pure-SiO/Si interfacec. Such an increase and structural change of the interfacial defects are likely the causes of the nitridation-enhanced NBTI.
Morita, Yosuke*; Nakajima, Kaoru*; Suzuki, Motofumi*; Kimura, Kenji*; Narumi, Kazumasa; Saito, Yuichi; Tsujimoto, Masahiko*; Isoda, Shoji*
no journal, ,
no abstracts in English
Morita, Yosuke*; Nakajima, Kaoru*; Suzuki, Motofumi*; Kimura, Kenji*; Narumi, Kazumasa; Saito, Yuichi
no journal, ,
no abstracts in English
Morita, Yosuke*; Nakajima, Kaoru*; Suzuki, Motofumi*; Kimura, Kenji*; Narumi, Kazumasa; Saito, Yuichi; Ishikawa, Norito; Hojo, Kiichi; Tsujimoto, Masahiko*; Isoda, Shoji*
no journal, ,
no abstracts in English
Morita, Yosuke*; Nakajima, Kaoru*; Suzuki, Motofumi*; Kimura, Kenji*; Narumi, Kazumasa; Saito, Yuichi; Tsujimoto, Masahiko*; Isoda, Shoji*
no journal, ,
no abstracts in English
Nagano, Kengo*; Nakajima, Kaoru*; Suzuki, Motofumi*; Kimura, Kenji*; Narumi, Kazumasa; Saito, Yuichi
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no abstracts in English
Nakajima, Kaoru*; Morita, Yosuke*; Kitayama, Takumi*; Suzuki, Motofumi*; Kimura, Kenji*; Narumi, Kazumasa; Saito, Yuichi; Tsujimoto, Masahiko*; Isoda, Shoji*
no journal, ,
no abstracts in English
Nakajima, Kaoru*; Morita, Yosuke*; Kitayama, Takumi*; Suzuki, Motofumi*; Kimura, Kenji*; Narumi, Kazumasa; Saito, Yuichi; Ishikawa, Norito; Hojo, Kiichi; Tsujimoto, Masahiko*; et al.
no journal, ,
no abstracts in English
Nagano, Kengo*; Nakajima, Kaoru*; Suzuki, Motofumi*; Kimura, Kenji*; Narumi, Kazumasa; Saito, Yuichi
no journal, ,
no abstracts in English
Nagano, Kengo*; Nakajima, Kaoru*; Suzuki, Motofumi*; Kimura, Kenji*; Narumi, Kazumasa; Saito, Yuichi
no journal, ,
no abstracts in English
Kitayama, Takumi*; Morita, Yosuke*; Nakajima, Kaoru*; Suzuki, Motofumi*; Kimura, Kenji*; Narumi, Kazumasa; Saito, Yuichi; Matsuda, Makoto; Sataka, Masao*; Tsujimoto, Masahiko*; et al.
no journal, ,
no abstracts in English
Nakajima, Kaoru*; Nagano, Kengo*; Suzuki, Motofumi*; Narumi, Kazumasa; Saito, Yuichi; Hirata, Koichi*; Kimura, Kenji*
no journal, ,