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論文

Polarization dependence of soft X-ray absorption spectroscopy on the heavy fermion superconductor CeNi$$_{2}$$Ge$$_{2}$$

藤原 秀紀*; 中谷 泰博*; 荒谷 秀和*; 金井 惟奈*; 山神 光平*; 濱本 諭*; 木須 孝幸*; 関山 明*; 田中 新*; 海老原 孝雄*; et al.

New Physics; Sae Mulli, 73(12), p.1062 - 1066, 2023/12

We have performed soft X-ray absorption spectroscopy (XAS) on the heavy fermion superconductor CeNi$$_{2}$$Ge$$_{2}$$ to examine the local 4${it f}$ electronic structure. The XAS spectra are qualitatively explained by ionic calculations, indicating a degree of localized character of the 4${it f}$ states, while sizable ${it cf}$-hybridization effects are also observed in the XAS spectra and those magnetic circular dichroism. In addition, the temperature dependence of linear dichroism in the XAS spectra indicates that the ground state symmetry is $$Gamma$$$$_{7}$$, and the excited states with $$Gamma$$$$_{6}$$ symmetry is above 390 K.

論文

Impact of the ground-state 4${it f}$ symmetry for anisotropic ${it cf}$ hybridization in the heavy-fermion superconductor CeNi$$_{2}$$Ge$$_{2}$$

藤原 秀紀*; 中谷 泰博*; 荒谷 秀和*; 金井 惟奈*; 山神 光平*; 濱本 諭*; 木須 孝幸*; 山崎 篤志*; 東谷 篤志*; 今田 真*; et al.

Physical Review B, 108(16), p.165121_1 - 165121_10, 2023/10

We report the ground-state symmetry of the Ce 4${it f}$ states in the heavy-fermion superconductor CeNi$$_{2}$$Ge$$_{2}$$, yielding anisotropic ${it cf}$ hybridization between the Ce 4${it f}$ states and conducting electrons. By analyzing linear dichroism in soft X-ray absorption and core-level hard X-ray photoemission spectra, the 4${it f}$ symmetry is determined as $$Sigma$$-type $$Gamma$$$$_{7}$$, promoting predominant hybridization with the conducting electrons originating from the Ge site. The band structures probed by soft X-ray angle-resolved photoemission indicates that the Ge 4${it p}$ components contribute to the band renormalization through the anisotropic hybridization effects, suggesting that the control of the electronic structures of Ge orbital gives an impact to achieve the exotic phenomena in CeNi$$_{2}$$Ge$$_{2}$$.

論文

Sodium-cooled Fast Reactors

大島 宏之; 森下 正樹*; 相澤 康介; 安藤 勝訓; 芦田 貴志; 近澤 佳隆; 堂田 哲広; 江沼 康弘; 江連 俊樹; 深野 義隆; et al.

Sodium-cooled Fast Reactors; JSME Series in Thermal and Nuclear Power Generation, Vol.3, 631 Pages, 2022/07

ナトリウム冷却高速炉(SFR: Sodium-cooled Fast Reactor)の歴史や、利点、課題を踏まえた安全性、設計、運用、メンテナンスなどについて解説する。AIを利用した設計手法など、SFRの実用化に向けた設計や研究開発についても述べる。

論文

Magnetoelastic anisotropy in Heusler-type Mn$$_{2-delta}$$CoGa$$_{1+delta}$$ films

窪田 崇秀*; 高野 大地*; 小田 洋平*; Mohanty, S.*; 伊藤 啓太*; 松木 充弘*; 林田 誠弘*; Sun, M.*; 竹田 幸治; 斎藤 祐児; et al.

Physical Review Materials (Internet), 6(4), p.044405_1 - 044405_12, 2022/04

 被引用回数:1 パーセンタイル:54.41(Materials Science, Multidisciplinary)

This study focuses on an inverse-type Heusler alloy, Mn$$_{2-delta}$$CoGa$$_{1+delta}$$ (MCG), with a small off-stoichiometry ($$delta$$), showing perpendicular magnetic anisotropy (PMA). We observed a relatively large uniaxial magnetocrystalline anisotropy constant ($$K_mathrm{u}$$) on the order of 10$$^5$$ J/m$$^3$$ at room temperature in the MCG films with a small tetragonal distortion of a few percent. X-ray magnetic circular dichroism (XMCD) was employed to get insight into the origin for the PMA. Negligible angular variation of the orbital magnetic moment evaluated using the XMCD spectra suggested a minor role of the so-called Bruno's term to $$K_mathrm{u}$$. The origin of the PMA was discussed based on the second-order perturbation theory in terms of the spin-orbit coupling, and first principles calculations, claiming that the mixing of the occupied $$uparrow$$- and the unoccupied $$downarrow$$-spin states is responsible for the PMA of the MCG films.

論文

Mn L$$_{2,3}$$-edge EXAFS and magnetic EXAFS studies on the halfmetallic ferromagnet Co$$_{2}$$MnSi

向後 純也*; 藤原 秀紀*; 関山 明*; 斎藤 祐児; 梅津 理恵*; 二木 かおり*

Journal of the Physical Society of Japan, 91(3), p.034702_1 - 034702_12, 2022/03

 被引用回数:0 パーセンタイル:0(Physics, Multidisciplinary)

We report magnetic circular dichroism in extended X-ray absorption fine structure (EXAFS) in a prototypical halfmetallic ferromagnet, Co$$_{2}$$MnSi. The EXAFS oscillations at the Mn L$$_{2,3}$$ edges are analyzed to obtain parameters used in the analysis of the magnetic EXAFS (MEXAFS). Theoretical calculations of MEXAFS spectra in Co$$_{2}$$MnSi show that the linear-path scatterings have larger contributions than the multiple triangular-path scatterings. Furthermore, the period of the oscillations in the MEXAFS spectra is shorter than that in the EXAFS spectra indicating that the far site contributions from the second to the fourth nearest neighbor Co and the third nearest Si atoms can strongly influence the MEXAFS oscillations, while the Mn atoms, despite the large magnetic moment, can have little contributions due to the interference of the spin components.

論文

Structures of magnetic excitations in the spin-$$frac{1}{2}$$ kagome-lattice antiferromagnets Cs$$_{2}$$Cu$$_{3}$$SnF$$_{12}$$ and Rb$$_{2}$$Cu$$_{3}$$SnF$$_{12}$$

齋藤 睦己*; 高岸 龍之介*; 栗田 伸之*; 渡邊 正理*; 田中 秀数*; 野村 竜司*; 福元 好志*; 池内 和彦*; 梶本 亮一

Physical Review B, 105(6), p.064424_1 - 064424_15, 2022/02

 被引用回数:5 パーセンタイル:69.66(Materials Science, Multidisciplinary)

Cs$$_{2}$$Cu$$_{3}$$SnF$$_{12}$$ is a spin-$$frac{1}{2}$$ antiferromagnet on a nearly uniform kagome lattice. This compound undergoes magnetic ordering with the $$q$$ = 0 structure and positive chirality, which is mainly caused by the large Dzyaloshinskii-Moriya interaction. Rb$$_{2}$$Cu$$_{3}$$SnF$$_{12}$$ is a spin-$$frac{1}{2}$$ antiferromagnet on a modified kagome lattice with a $$2a$$ $$times$$ $$2a$$ enlarged chemical unit cell at room temperature. Its ground state is a pinwheel valence bond solid (VBS) with an excitation gap. Here, we show the structures of magnetic excitations in Cs$$_{2}$$Cu$$_{3}$$SnF$$_{12}$$ and Rb$$_{2}$$Cu$$_{3}$$SnF$$_{12}$$ investigated by inelastic neutron scattering in wide energy and momentum ranges. For Cs$$_{2}$$Cu$$_{3}$$SnF$$_{12}$$, four single-magnon excitation modes were observed. It was confirmed that the energy of single-magnon excitations arising from the $$Gamma'$$ point in the extended Brillouin zones is largely renormalized downwards. It was found that the broad excitation continuum without a marked structure spreads in a wide energy range from $$0.15J$$ to approximately $$2.5J$$. These findings strongly suggest spinon excitations as elementary excitations in Cs$$_{2}$$Cu$$_{3}$$SnF$$_{12}$$. In Rb$$_{2}$$Cu$$_{3}$$SnF$$_{12}$$, singlet-triplet excitations from the pinwheel VBS state and their ghost modes caused by the enlargement of the chemical unit cell were clearly confirmed. It was found that the excitation continuum is structured in the low-energy region approximately below $$J_mathrm{avg}$$ and the almost structureless high-energy excitation continuum extends to approximately $$2.6J_mathrm{avg}$$. The characteristics of the high-energy excitation continuum are common to both Cs$$_{2}$$Cu$$_{3}$$SnF$$_{12}$$ and Rb$$_{2}$$Cu$$_{3}$$SnF$$_{12}$$, irrespective of their ground states. The experimental results strongly suggest that the spin liquid component remains in the ground state as quantum fluctuations in Cs$$_{2}$$Cu$$_{3}$$SnF$$_{12}$$ and Rb$$_{2}$$Cu$$_{3}$$SnF$$_{12}$$.

論文

Detecting halfmetallic electronic structures of spintronic materials in a magnetic field

藤原 秀紀*; 梅津 理恵*; 黒田 文彬*; 宮脇 淳*; 樫内 利幸*; 西本 幸平*; 永井 浩大*; 関山 明*; 入澤 明典*; 竹田 幸治; et al.

Scientific Reports (Internet), 11(1), p.18654_1 - 18654_9, 2021/09

 被引用回数:0 パーセンタイル:0(Multidisciplinary Sciences)

Band-gap engineering is one of the fundamental techniques in semiconductor technology. To fully utilize the spintronic material, it is essential to optimize the spin-dependent electronic structure in operando conditions by applying the magnetic and/or electric fields. Here we present a new spectroscopic technique to probe the spin-polarized electronic structures by using magnetic circular dichroism (MCD) in resonant inelastic soft X-ray scattering (RIXS) under an external magnetic field. Thanks to the spin-selective dipole-allowed transitions in the RIXS-MCD, we have successfully demonstrated the direct evidence of the perfectly spin-polarized electronic structures for the prototypical halfmetallic Heusller alloy, Co$$_{2}$$MnSi. The RIXS-MCD is a promising tool to probe the spin-dependent carriers and band-gap with element specific way induced in buried magnetic layers under operando conditions.

論文

Microstructures and interface magnetic moments in Mn$$_{2}$$VAl/Fe layered films showing exchange bias

窪田 崇秀*; 嶋田 雄介*; 土屋 朋生*; 吉川 智己*; 伊藤 啓太*; 竹田 幸治; 斎藤 祐児; 今野 豊彦*; 木村 昭夫*; 高梨 弘毅*

Nanomaterials (Internet), 11(7), p.1723_1 - 1723_11, 2021/07

 被引用回数:2 パーセンタイル:18.63(Chemistry, Multidisciplinary)

Heusler alloys exhibit various magnetic properties. In this study, a layered sample consisting of a Heusler alloy, Mn$$_{2}$$VAl and a ferromagnet, Fe, is selected as a material system exhibiting exchange bias. Although the fully ordered Mn$$_{2}$$VAl is known as a ferrimagnet, the Mn$$_{2}$$VAl/Fe layered structure exhibits exchange bias. The high-angle annular dark field STEM images demonstrated the formation of Mn$$_{2}$$VAl clusters with the L2$$_{1}$$ phase distributed only around the interface to the Fe layer in the sample. Furthermore, the antiferromagnetic coupling between the Mn- and Fe-moments were observed in element specific hysteresis loops measured using XMCD. The locally ordered L2$$_{1}$$ phase and antiferromagnetic Mn-moments in the Mn$$_{2}$$VAl layer are important for the exchange bias.

論文

Direct observation of the magnetic ordering process in the ferromagnetic semiconductor Ga$$_{1-x}$$Mn$$_{x}$$As via soft X-ray magnetic circular dichroism

竹田 幸治; 大矢 忍*; Pham, N. H.*; 小林 正起*; 斎藤 祐児; 山上 浩志; 田中 雅明*; 藤森 淳*

Journal of Applied Physics, 128(21), p.213902_1 - 213902_11, 2020/12

 被引用回数:5 パーセンタイル:45.15(Physics, Applied)

In order to understand the mechanism of the ferromagnetism in Ga$$_{1-x}$$Mn$$_{x}$$As ((Ga,Mn)As), we have investigated the magnetic behavior on a microscopic level through systematic temperature ($$T$$) and magnetic-field ($$H$$) dependent soft X-ray magnetic circular dichroism (XMCD) experiments at the Mn $$L_mathrm{2,3}$$ absorption edges. The $$T$$ and $$H$$ dependences of XMCD intensities have been analyzed using a model consisting of the ferromagnetic (FM), paramagnetic, and superparamagnetic (SPM) components. Intriguingly, we have found a common behavior for the ferromagnetic ordering process in (Ga,Mn)As samples with different Mn concentrations and different Curie temperature ($$T_mathrm{C}$$) values. In particular, the SPM component develops well above $$T_mathrm{C}$$, indicating that local FM regions are formed well above $$T_mathrm{C}$$. The present findings indicate that the onset of ferromagnetic ordering is triggered by local electronic states around the substitutional Mn ions. Insight into the most representative ferromagnetic semiconductor, (Ga,Mn)As, will be an important step in understanding the mechanism of ferromagnetic ordering in various ferromagnetic semiconductor families.

論文

Insight into Kondo screening in the intermediate-valence compound SmOs$$_4$$Sb$$_{12}$$ uncovered by soft X-ray magnetic circular dichroism

斎藤 祐児; 藤原 秀紀*; 保井 晃*; 門野 利治*; 菅原 仁*; 菊地 大輔*; 佐藤 英行*; 菅 滋正*; 山崎 篤志*; 関山 明*; et al.

Physical Review B, 102(16), p.165152_1 - 165152_8, 2020/10

 被引用回数:1 パーセンタイル:6.21(Materials Science, Multidisciplinary)

Through a high-precision soft X-ray magnetic circular dichroism (XMCD) study of the intermediate-valence compound SmOs$$_4$$Sb$$_{12}$$, we show our successful approach of revealing unprecedented details of Kondo screening below a characteristic temperature of $$ T_{0} sim$$ 20 K in the paramagnetic phase. The multiplet XMCD structure at the Sm $$M_{5}$$ edge sensitive to the 4$$f$$ configuration enabled us to observe a clear difference between the temperature evolution above and below $$T_{0}$$ with one- and two-component behavior, respectively. Our findings are in strong contrast to the conventional Kondo crossover that coincides with the valence transition, but are qualitatively accounted for by theoretical XMCD predictions combined with the two-fluid phenomenology recently proposed. This work contributes to the large context of Kondo physics that is closely related to quantum criticality in heavy fermion systems.

論文

Unveiling spin-dependent unoccupied electronic states of Co$$_{2}$$MnGe (Ga) film via Ge (Ga) $$L_{2,3}$$ absorption spectroscopy

吉川 智己*; Antonov, V. N.*; 河野 嵩*; 鹿子木 将明*; 角田 一樹; 宮本 幸治*; 竹田 幸治; 斎藤 祐児; 後藤 一希*; 桜庭 裕弥*; et al.

Physical Review B, 102(6), p.064428_1 - 064428_7, 2020/08

 被引用回数:1 パーセンタイル:13.29(Materials Science, Multidisciplinary)

X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD) spectroscopy were applied at the Ge (Ga) $$L_{2,3}$$ edge to unravel the spin-resolved unoccupied electronic states of Co$$_{2}$$MnGe (Ga). Complicated spectral features were observed in both XAS and XMCD spectra. For their interpretation, we compared the experimental XAS and XMCD spectra with the calculated Ge (Ga) 4$$s$$ and 4$$d$$ orbital partial density of states. The comparison enabled a qualitative explanation of the XMCD spectra as the difference between the majority and minority-spin unoccupied density of states summed over the 4$$s$$ and 4$$d$$ orbitals. Our finding provides a new approach to uncover the spin-split partial density of states above the Fermi level.

論文

Nature of the Dirac gap modulation and surface magnetic interaction in axion antiferromagnetic topological insulator MnBi$$_{2}$$Te$$_{4}$$

Shikin, A. M.*; Estyunin, D. A.*; Klimovskikh, I. I.*; Filnov, S. O.*; Kumar, S.*; Schwier, E. F.*; 宮本 幸治*; 奥田 太一*; 木村 昭夫*; 黒田 健太*; et al.

Scientific Reports (Internet), 10, p.13226_1 - 13226_13, 2020/08

 被引用回数:48 パーセンタイル:96.27(Multidisciplinary Sciences)

Modification of the gap at the Dirac point (DP) in axion antiferromagnetic topological insulator MnBi$$_{2}$$Te$$_{4}$$ and its electronic and spin structure have been studied by angle- and spin-resolved photoemission spectroscopy (ARPES) under laser excitation at various temperatures, light polarizations and photon energies. We have distinguished both large and reduced gaps at the DP in the ARPES dispersions, which remain open above the N$'{e}$el temperature of $$T_textrm{N}$$ = 24.5 K. We propose that the gap above $$T_textrm{N}$$ remains open due to a short-range magnetic field generated by chiral spin fluctuations. Spin-resolved ARPES, XMCD and circular dichroism ARPES measurements show a surface ferromagnetic ordering for the large gap sample and apparently significantly reduced effective magnetic moment for the reduced gap sample.

論文

Manipulation of saturation magnetization and perpendicular magnetic anisotropy in epitaxial Co$$_{x}$$Mn$$_{4-x}$$N films with ferrimagnetic compensation

伊藤 啓太*; 安富 陽子*; Zhu, S.*; Nurmamat, M.*; 田原 昌樹*; 都甲 薫*; 秋山 了太*; 竹田 幸治; 斎藤 祐児; 小口 多美夫*; et al.

Physical Review B, 101(10), p.104401_1 - 104401_8, 2020/03

 被引用回数:14 パーセンタイル:73.8(Materials Science, Multidisciplinary)

Spintronics devices utilizing a magnetic domain wall motion have attracted increasing attention, and ferrimagentic materials with almost compensated magnetic moments are highly required to realize the fast magnetic domain wall motion. Here, we report a key function for this purpose in anti-perovskite Co$$_{x}$$Mn$$_{4-x}$$N films. Perpendicular magnetization emerges for $$0.8 leq x$$, and the saturation magnetization reaches a minimum value at $$x = 0.8$$.

論文

Element-specific density of states of Co$$_{2}$$MnGe revealed by resonant photoelectron spectroscopy

河野 嵩*; 鹿子木 将明*; 吉川 智己*; Wang, X.*; 角田 一樹*; 宮本 幸治*; 室 隆桂之*; 竹田 幸治; 斎藤 祐児; 後藤 一希*; et al.

Physical Review B, 100(16), p.165120_1 - 165120_6, 2019/10

 被引用回数:4 パーセンタイル:22.33(Materials Science, Multidisciplinary)

Resonant photoelectron spectroscopy at the Co and Mn 2${it p}$ core absorption edges of half-metallic Co$$_{2}$$MnGe has been performed to determine the element-specific density of states (DOS). A significant contribution of the Mn 3${it d}$ partial DOS near the Fermi level ($$E_{F}$$) was clarified by measurement at the Mn 2${it p}$ absorption edge. Further analysis by first-principles calculation revealed that it has $$t_{2g}$$ symmetry, which must be responsible for the electrical conductivity along the line perpendicular to the film plane. The dominant normal Auger contribution observed at the Co 2${it p}$ absorption edge indicates delocalization of photoexcited Co 3${it d}$ electrons. The difference in the degrees of localization of the Mn 3${it d}$ and Co 3${it d}$ electrons in Co$$_{2}$$MnGe is explained by the first-principles calculation.

論文

Magnetic-impurity-induced modifications to ultrafast carrier dynamics in the ferromagnetic topological insulators Sb$$_{2-x}$$V$$_{x}$$Te$$_{3}$$

角田 一樹*; 鹿子木 将明*; Reimann, J.*; Nurmamat, M.*; 後藤 伸一*; 竹田 幸治; 斎藤 祐児; Kokh, K. A.*; Tereshchenko, O. E.*; G$"u$dde, J.*; et al.

New Journal of Physics (Internet), 21(9), p.093006_1 - 093006_8, 2019/09

 被引用回数:10 パーセンタイル:65.58(Physics, Multidisciplinary)

We systematically investigate the magnetic, structural and electronic properties and the ultrafast carrier dynamics in a series of V-doped Sb$$_{2}$$Te$$_{3}$$ samples of composition Sb$$_{2-x}$$V$$_{x}$$Te$$_{3}$$ with x = 0, 0.015 and 0.03. Element specific X-ray magnetic circular dichroism signifies that the ferromagnetism of V-doped Sb$$_{2}$$Te$$_{3}$$ is governed by the p-d hybridization between the host carrier and the magnetic dopant. Time- and angle-resolved photoemission spectroscopy has revealed that the V impurity induced states underlying the topological surface state (TSS) add scattering channels that significantly shorten the duration of transient surface electrons down to 100 fs scale. This is in a sharp contrast to the prolonged duration reported for pristine samples though the TSS is located inside the bulk energy gap of the host in either magnetic or non-magnetic cases. It implies the presence of a mobility gap in the bulk energy gap region of the host material.

論文

Electronic structure of the high-$$T_{rm C}$$ ferromagnetic semiconductor (Ga,Fe)Sb; X-ray magnetic circular dichroism and resonance photoemission spectroscopy studies

坂本 祥哉*; Tu, N. T.*; 竹田 幸治; 藤森 伸一; Hai, P. N.*; Anh, L. D.*; 若林 勇希*; 芝田 悟朗*; 堀尾 眞史*; 池田 啓祐*; et al.

Physical Review B, 100(3), p.035204_1 - 035204_8, 2019/07

The electronic structure and the magnetism of the ferromagnetic semiconductor (Ga,Fe)Sb, whose Curie temperature $$T_{rm C}$$ can exceed room temperature, were investigated by means of X-ray absorption spectroscopy (XAS), X-ray magnetic circular dichroism (XMCD), and resonance photoemission spectroscopy (RPES). The line-shape analyses of the XAS and XMCD spectra suggest that the ferromagnetism is of intrinsic origin. The orbital magnetic moments deduced using XMCD sum rules were found to be large, indicating that there is a considerable 3$$d^{6}$$ contribution to the ground state of Fe. From RPES, we observed a strong dispersive Auger peak and nondispersive resonantly enhanced peaks in the valence-band spectra. The latter is a fingerprint of the correlated nature of Fe 3$$d$$ electrons, whereas the former indicates their itinerant nature. It was also found that the Fe 3$$d$$ states have a finite contribution to the density of states at the Fermi energy. These states, presumably consisting of majority-spin $$p$$-$$d$$ hybridized states or minority-spin e states, would be responsible for the ferromagnetic order in this material.

論文

Electronic structure of the high-$$T_{rm C}$$ ferromagnetic semiconductor (Ga,Fe)Sb; X-ray magnetic circular dichroism and resonance photoemission spectroscopy studies

坂本 祥哉*; Tu, N. T.*; 竹田 幸治; 藤森 伸一; Hai, P. N.*; Anh, L. D.*; 若林 勇希*; 芝田 悟朗*; 堀尾 眞史*; 池田 啓祐*; et al.

Physical Review B, 100(3), p.035204_1 - 035204_8, 2019/07

 被引用回数:14 パーセンタイル:66.66(Materials Science, Multidisciplinary)

The electronic structure and the magnetism of the ferromagnetic semiconductor (Ga,Fe)Sb, whose Curie temperature $$T_{rm C}$$ can exceed room temperature, were investigated by means of X-ray absorption spectroscopy (XAS), X-ray magnetic circular dichroism (XMCD), and resonance photoemission spectroscopy (RPES). The line-shape analyses of the XAS and XMCD spectra suggest that the ferromagnetism is of intrinsic origin. The orbital magnetic moments deduced using XMCD sum rules were found to be large, indicating that there is a considerable 3$$d^{6}$$ contribution to the ground state of Fe. From RPES, we observed a strong dispersive Auger peak and nondispersive resonantly enhanced peaks in the valence-band spectra. The latter is a fingerprint of the correlated nature of Fe 3$$d$$ electrons, whereas the former indicates their itinerant nature. It was also found that the Fe 3$$d$$ states have a finite contribution to the density of states at the Fermi energy. These states would be responsible for the ferromagnetic order in this material.

論文

Negative Te spin polarization responsible for ferromagnetic order in the doped topological insulator V$$_{0.04}$$(Sb$$_{1-x}$$Bi$$_{x}$$)$$_{1.96}$$Te$$_{3}$$

Ye, M.*; Xu, T.*; Li, G.*; Qiao, S.*; 竹田 幸治; 斎藤 祐児; Zhu, S.-Y.*; Nurmamat, M.*; 角田 一樹*; 石田 行章*; et al.

Physical Review B, 99(14), p.144413_1 - 144413_7, 2019/04

AA2018-0697.pdf:1.89MB

 被引用回数:12 パーセンタイル:56.9(Materials Science, Multidisciplinary)

We investigate the microscopic origin of ferromagnetism coupled with topological insulators in V-doped (Sb,Bi)$$_{2}$$Te$$_{3}$$ employing X-ray magnetic circular dichroism and angle-resolved two-photon photoemission spectroscopies, combined with first-principles calculations. We found an magnetic moment at the Te site anti-parallel to that of the V and Sb sites, which plays a key role in the ferromagnetic order. We ascribe it to the hybridization between Te 5${it p}$ and V 3${it d}$ majority spin states at the Fermi energy, consistent with the Zener-type ${it p}$-${it d}$ exchange interaction scenario. The substitution of Bi for Sb suppresses the bulk ferromagnetism by introducing extra electron carriers in the majority spin channel of the Te ${it p}$ states that compensates the antiparallel magnetic moment on the Te site. Our findings reveal important clues to designing magnetic topological insulators with higher Curie temperature that work under ambient conditions.

論文

Dirac gap opening and Dirac-fermion-mediated magnetic coupling in antiferromagnetic Gd-doped topological insulators and their manipulation by synchrotron radiation

Shikin, A. M.*; Estyunin, D. A.*; Surnin, Yu. I.*; Koroleva, A. V.*; Shevchenko, E. V.*; Kokh, K. A.*; Tereshchenko, O. E.*; Kumar, S.*; Schwier, E. F.*; 島田 賢也*; et al.

Scientific Reports (Internet), 9(1), p.4813_1 - 4813_17, 2019/03

 被引用回数:19 パーセンタイル:71.98(Multidisciplinary Sciences)

A new kind of magnetically-doped antiferromagnetic (AFM) topological insulators (TIs), Bi$$_{1.09}$$Gd$$_{0.06}$$Sb$$_{0.85}$$Te$$_{3}$$, has been studied by angle-resolved photoemission, superconducting magnetometry (SQUID) and X-ray magnetic circular dichroism (XMCD). It has been shown that this TI is characterized by the Dirac gap at the Fermi level. In the paramagnetic phase, a surface magnetic layer is supposed to develop, where the coupling between the Gd magnetic moments is mediated by the topological surface states (TSSs). This assumption can be confirmed by opening a gap at the Dirac point indicated by the surface-sensitive ARPES, a weak hysteresis loop measured by SQUID, the XMCD showing a surface magnetic moment and the temperature dependence of electrical resistance demonstrating a mid-gap semiconducting behavior, which correlates with the temperature dependence of the surface magnetization and confirms the conclusion that only TSSs are located at the Fermi level.

論文

Manifestation of electron correlation effect in 5$$f$$ states of uranium compounds revealed by 4$$d$$-5$$f$$ resonant photoelectron spectroscopy

藤森 伸一; 小畠 雅明; 竹田 幸治; 岡根 哲夫; 斎藤 祐児; 藤森 淳; 山上 浩志; 芳賀 芳範; 山本 悦嗣; 大貫 惇睦*

Physical Review B, 99(3), p.035109_1 - 035109_5, 2019/01

 被引用回数:9 パーセンタイル:53.77(Materials Science, Multidisciplinary)

In the present study, we have elucidated the nature of the electron correlation effect in uranium compounds by imaging the partial $$mathrm{U}~5f$$ density of states (pDOS) of typical itinerant, localized, and heavy fermion uranium compounds by using the $$mathrm{U}$$ 4$$d$$-5$$f$$ resonant photoemission spectroscopy. Obtained $$mathrm{U}~5$$ pDOS exhibit a systematic trend depending on the physical properties of compounds: Although the coherent peak at the Fermi level can be explained by the band-structure calculation, an incoherent peak emerges on the higher binding energy side ($$lesssim 1~mathrm{eV}$$) in the cases of localized and heavy fermion compounds. The intensity and energy position of the incoherent peak is increased and shifted to a higher binding energy as the localization of the $$mathrm{U}~5$$ state increases. These behaviors are consistent with the prediction of the Mott metal-insulator transition, suggesting that the Hubbard-$$U$$ type mechanism takes an essential role in the $$5f$$ electronic structure of actinide materials.

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