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Journal Articles

Degradation of charge collection efficiency obtained for 6H-SiC n$$^{+}$$p diodes irradiated with gold ions

Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu; Onoda, Shinobu; Hishiki, Shigeomi; Hirao, Toshio; Kamiya, Tomihiro; Yokoyama, Takuro*; Sakamoto, Airi*; Tanaka, Reisaburo*; et al.

Materials Science Forum, 556-557, p.913 - 916, 2007/00

https://doi.org/10.4028/www.scientific.net/MSF.556-557.913
 Times Cited Count：4 Percentile：76.81(Materials Science, Ceramics)

no abstracts in English

Journal Articles

Observation of charge collection efficiency of 6H-SiC n$$^{+}$$p diodes irradiated with Au-ions

Iwamoto, Naoya; Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Onoda, Shinobu; Hishiki, Shigeomi; Hirao, Toshio; Kamiya, Tomihiro; Yokoyama, Takuro*; Sakamoto, Airi*; et al.

Proceedings of 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-7), p.185 - 188, 2006/10

no abstracts in English

Oral presentation

Decrease in charge collection efficiency of 6H-SiC n$$^{+}$$p diodes irradiated with Au ions

Iwamoto, Naoya; Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu; Onoda, Shinobu; Hishiki, Shigeomi; Hirao, Toshio; Kamiya, Tomihiro; Yokoyama, Takuro*; Sakamoto, Airi*; et al.

no journal, , 

no abstracts in English

Oral presentation

Charge collection from 6H-SiC n$$^{+}$$p diodes irradiated with 12 MeV-Au ions

Iwamoto, Naoya; Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Onoda, Shinobu; Hishiki, Shigeomi; Hirao, Toshio; Kamiya, Tomihiro; Yokoyama, Takuro*; Sakamoto, Airi*; et al.

no journal, , 

no abstracts in English

Oral presentation

TIBIC measurement of 6H-SiC p$$^{+}$$n diodes irradiated with oxygen and nickel ions

Iwamoto, Naoya; Onoda, Shinobu; Hishiki, Shigeomi; Mishima, Kenta; Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu*; Kamiya, Tomihiro; Sakamoto, Airi*; Nakano, Itsuo*; et al.

no journal, , 

Transient currents induced in 6H-SiC n$$^{+}$$p by Ni and O ions were evaluated using Transient Ion Beam Induced Current (TIBIC). Charge Collection Efficiency (CCE) was estimated from TIBIC signals. As a results, CCE for 9 MeV-Ni and 9 MeV-O-irradiated 6H-SiC n$$^{+}$$p diodes are 75 and 90 % respectively. From a simulation of ion tracks in which charge distribution and Auger recombination are considered, the origin of the decrease in CCE is explained in terms of the recombination of electron-hole pairs by Auger recombination in high ion beam induced carrier concentration.

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