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Hasegawa, Mika*; Sugawara, Kenta*; Suto, Ryota*; Sambonsuge, Shota*; Teraoka, Yuden; Yoshigoe, Akitaka; Filimonov, S.*; Fukidome, Hirokazu*; Suemitsu, Maki*
Nanoscale Research Letters, 10, p.421_1 - 421_6, 2015/10
Times Cited Count：14 Percentile：52.35(Nanoscience & Nanotechnology)Graphene has attracted much attention as a promising material in electronics and photonics. The graphitization temperature of 1473 K or higher of graphene-on-silicon(GOS), however, is still too high to be fully compatible with the Si technology. Here, the first application of Ni-assisted formation of graphene to the GOS method was reported. We demonstrate that the graphene formation temperature can be reduced by more than 200 K by this method. Moreover, solid-phase reactions during heating/annealing/cooling procedures have been investigated in detail by using 
synchrotron-radiation X-ray photoelectron spectroscopy. As a result, we clarify the role of Ni/SiC reactions, in which not only Ni silicidation and but also Ni carbonization is suggested as a key process in the formation of graphene.
Sambonsuge, Shota*; Abe, Shunsuke*; Takahashi, Ryota*; Imaizumi, Kei*; Handa, Hiroyuki*; Yoshigoe, Akitaka; Teraoka, Yuden; Kotsugi, Masato*; Okochi, Takuo*; Kinoshita, Toyohiko*; et al.
no journal, ,
no abstracts in English
Haramoto, Naoki*; Inomata, Shuya*; Sambonsuge, Shota*; Yoshigoe, Akitaka; Teraoka, Yuden; Fukidome, Hirokazu*; Suemitsu, Maki*
no journal, ,
no abstracts in English
Hasegawa, Mika*; Sugawara, Kenta*; Suto, Ryota*; Sambonsuge, Shota*; Haramoto, Naoki*; Teraoka, Yuden; Yoshigoe, Akitaka; Fukidome, Hirokazu*; Suemitsu, Maki*
no journal, ,
no abstracts in English
Hasegawa, Mika*; Sugawara, Kenta*; Suto, Ryota*; Sambonsuge, Shota*; Haramoto, Naoki*; Teraoka, Yuden; Yoshigoe, Akitaka; Fukidome, Hirokazu*; Suemitsu, Maki*
no journal, ,
no abstracts in English
Hasegawa, Mika*; Suto, Ryota*; Sugawara, Kenta*; Sambonsuge, Shota*; Haramoto, Naoki*; Teraoka, Yuden; Yoshigoe, Akitaka; Fukidome, Hirokazu*; Suemitsu, Maki*
no journal, ,
no abstracts in English
Hasegawa, Mika*; Yoshigoe, Akitaka; Sugawara, Kenta*; Suto, Ryota*; Sambonsuge, Shota*; Teraoka, Yuden; Fukidome, Hirokazu*; Suemitsu, Maki*
no journal, ,
Low-temperature (1073 K) formation of graphene was performed on Si substrates by using an ultrathin (2 nm) Ni layer deposited on a 3C-SiC thin film heteroepitaxially grown on a Si substrate. Angle-resolved, synchrotron-radiation X-ray photoemission spectroscopy (SR-XPS) results show that the stacking order is, from the surface to the bulk, Ni carbides(Ni
C/NiCx)/graphene/Ni/Ni silicides (Ni
Si/NiSi)/3C-SiC/Si. In situ SR-XPS during the graphitization annealing clarified that graphene is formed during the cooling stage. We conclude that Ni silicide and Ni carbide formation play an essential role in the formation of graphene.
