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Tsai, T.-H.; Sasaki, Shinji; Maeda, Koji
Journal of Nuclear Science and Technology, 60(6), p.715 - 723, 2023/06
Times Cited Count：1 Percentile：31.61(Nuclear Science & Technology)Matsuya, Yusuke; Kai, Takeshi; Sato, Tatsuhiko; Liamsuwan, T.*; Sasaki, Kohei*; Nikjoo, H.*
Physics in Medicine & Biology, 66(6), p.06NT02_1 - 06NT02_11, 2021/03
Times Cited Count：17 Percentile：90.49(Engineering, Biomedical)A general-purpose Monte Carlo radiation transport simulation code, Particle and Heavy Ion Transport code System (PHITS), has the ability to handle diverse particle types over a wide range of energy. In PHITS version 3.20, ion track structure mode has been developed based on the algorithms in the KURBUC code, which enables to simulate the atomic interactions by primary ion and secondary particles (named as PHITS-KURBUC mode). In this study, we compared the range, radial dose distributions, and microdosimetric distributions calculated using the PHITS-KURBUC mode to the corresponding data obtained from the original KURBUC and from other studies. These comparative studies confirm the successful inclusion of the KURBUC code in the PHITS code. As results of the synergistic effect between the macroscopic and microscopic radiation transport codes, this implementation enabled the detailed calculation of the microdosimetric and nanodosimetric quantities under complex radiation fields, such as proton beam therapy with the spread-out Bragg peak. This PHITS-KURBUC mode is expected to pave the way for next-generation radiation researches, such as radiation physics, radiological protection, medical physics, and radiation biology.
dosimetry system based on an optical fiber-coupled microsized photostimulable phosphor for stereotactic body radiation therapyYada, Ryuichi*; Maenaka, Kazusuke*; Miyamoto, Shuji*; Okada, Go*; Sasakura, Aki*; Ashida, Motoi*; Adachi, Masashi*; Sato, Tatsuhiko; Wang, T.*; Akasaka, Hiroaki*; et al.
Medical Physics, 47(10), p.5235 - 5249, 2020/10
Times Cited Count：7 Percentile：52.3(Radiology, Nuclear Medicine & Medical Imaging)The dosimeter system is capable of real-time, accurate, and precise measurement under stereotactic body radiation therapy (SBRT) conditions. The probe is smaller than a conventional dosimeter, has excellent spatial resolution, and can be valuable in SBRT with a steep dose distribution over a small field. The developed PSP dosimeter system appears to be suitable for in vivo SBRT dosimetry.
Yamashiki, Yosuke*; Maehara, Hiroyuki*; Airapetian, V.*; Notsu, Yuta*; Sato, Tatsuhiko; Notsu, Shota*; Kuroki, Ryusuke*; Murashima, Keiya*; Sato, Hiroaki*; Namekata, Kosuke*; et al.
Astrophysical Journal, 881(2), p.114_1 - 114_24, 2019/08
Times Cited Count：31 Percentile：83.73(Astronomy & Astrophysics)The impact of Stellar flares on extrasolar planetary systems has been discussed and argued, especially whether there is a potential impact on their life systems. Here, we propose a comprehensive evaluation system for stellar flares, focusing on Stellar Proton Events (SPE) on selected extrasolar planets with hypothetical atmospheres and oceans. This is done by cross-linking KIC flare-observed and flare-estimated stars by their start pots that are directly linked with the Monte Carlo simulation system PHITS through the exoplanetary database system ExoKyoto. The estimated dose at ground level for each planetary surface did not exceed the critical dose for complex animals.
Elfiky, D.*; Yamaguchi, Masafumi*; Sasaki, Takuo*; Takamoto, Tatsuya*; Morioka, Chiharu*; Imaizumi, Mitsuru*; Oshima, Takeshi; Sato, Shinichiro; Elnawawy, M.*; Eldesoky, T.*; et al.
Japanese Journal of Applied Physics, 49(12), p.121201_1 - 121201_7, 2010/12
Times Cited Count：12 Percentile：45.82(Physics, Applied)One of the fundamental objectives for research and development of space solar cells is to improve their radiation resistance. InGaP solar cells with low base carrier concentrations under low-energy proton irradiations have shown high radiation resistances. In this study, an analytical model for low-energy proton radiation damage to InGaP subcells based on a fundamental approach for radiative and nonradiative recombinations has been proposed. The radiation resistance of InGaP subcells as a function of base carrier concentration has been analyzed by using the radiative recombination lifetime and damage coefficient K for the minority-carrier lifetime of InGaP. Numerical analysis shows that an InGaP solar cell with a lower base carrier concentration is more radiation-resistant. Satisfactory agreements between analytical and experimental results have been obtained, and these results show the validity of the analytical procedure. The damage coefficients for minority-carrier diffusion length and carrier removal rate with low-energy proton irradiations have been observed to be dependent on carrier concentration through this study. As physical mechanisms behind the difference observed between the radiation-resistant properties of various base doping concentrations, two mechanisms, namely, the effect of a depletion layer as a carrier collection layer and generation of the impurity-related complex defects due to low-energy protons stopping within the active region, have been proposed.
Elfiky, D.*; Yamaguchi, Masafumi*; Sasaki, Takuo*; Takamoto, Tatsuya*; Morioka, Chiharu*; Imaizumi, Mitsuru*; Oshima, Takeshi; Sato, Shinichiro; Elnawawy, M.*; Eldesoky, T.*; et al.
Japanese Journal of Applied Physics, 49(12), p.121202_1 - 121202_5, 2010/12
Times Cited Count：7 Percentile：31.03(Physics, Applied)GaAs solar cells with the lower base carrier concentration under low energy proton irradiations had shown experimentally the better radiation-resistance. Analytical model based on fundamental approach for radiative and non-radiative recombination has been proposed for radiation damage in GaAs sub-cells. The radiation resistance of GaAs sub-cells as a function of base carrier concentration has been analyzed by using radiative recombination lifetime and damage coefficient for minority carrier lifetime. Numerical analysis shows good agreement with experimental results. The effect of carrier concentration upon the change of damage constant and carrier removal rate have been studied.
Elfiky, D.*; Yamaguchi, Masafumi*; Sasaki, Takuo*; Takamoto, Tatsuya*; Morioka, Chiharu*; Imaizumi, Mitsuru*; Oshima, Takeshi; Sato, Shinichiro; Elnawawy, M.*; Eldesuky, T.*; et al.
Proceedings of 35th IEEE Photovoltaic Specialists Conference (PVSC-35) (CD-ROM), p.002528 - 002532, 2010/06
Times Cited Count：6 Percentile：87.7(Energy & Fuels)Proton energy dependence of radiation damage to GaAs/Ge solar cells irradiated with protons with various energies (50 keV, 200 keV, 1 MeV and 9.5 MeV) were analyzed by using PC1D simulation together with SRIM simulations to investigate their electrical properties. The degradation of the open-circuit voltage is highest for 50 keV irradiation and lowest for 9.5 MeV irradiation. According to SRIM simulations the above changes in electrical properties are mainly related to damage in different regions of the solar sells.
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=1.5-2.4 GeVZegers, R. G. T.*; Sumihama, Mizuki*; Ahn, D. S.*; Ahn, J. K.*; Akimune, Hidetoshi*; Asano, Yoshihiro; Chang, W. C.*; Dat
, S.*; Ejiri, Hiroyasu*; Fujimura, Hisako*; et al.
Physical Review Letters, 91(9), p.092001_1 - 092001_4, 2003/08
Times Cited Count：128 Percentile：94.9(Physics, Multidisciplinary)no abstracts in English
= +1 Baryon resonance in photoproduction from the neutronNakano, Takashi*; Ahn, D. S.*; Ahn, J. K.*; Akimune, Hidetoshi*; Asano, Yoshihiro; Chang, W. C.*; Date, S.*; Ejiri, Hiroyasu*; Fujimura, Hisako*; Fujiwara, Mamoru; et al.
Physical Review Letters, 91(1), p.012002_1 - 012002_4, 2003/07
Times Cited Count：1006 Percentile：99.86(Physics, Multidisciplinary)no abstracts in English
Kizu, Kaname; Hosogane, Nobuyuki; Hiratsuka, Hajime; Ichige, Hisashi; Sasajima, Tadayuki; Masaki, Kei; Miya, Naoyuki; Honda, Masao; Iwahashi, Takaaki*; Sasaki, Noboru*; et al.
Fusion Engineering and Design, 58-59, p.331 - 335, 2001/11
Times Cited Count：16 Percentile：73.21(Nuclear Science & Technology)no abstracts in English
Auguste, T.*; Faenov, A. Y.*; Fukumoto, Ichiro; Hulin, S.*; Magunov, A. I.*; Monot, P.*; D'Oliveira, P.*; Pikuz, T. A.*; Sasaki, Akira; Sharkov, B. Y.*; et al.
Journal of Quantitative Spectroscopy & Radiative Transfer, 71(2-6), p.147 - 156, 2001/10
Times Cited Count：14 Percentile：57.94(Optics)no abstracts in English
Zhidkov, A. G.; Sasaki, Akira; Fukumoto, Ichiro; Tajima, Toshiki; Auguste, T.*; D'Oliveira, P.*; Hulin, S.*; Monot, P.*; Faenov, A. Y.*; Pikuz, T. A.*; et al.
Physics of Plasmas, 8(8), p.3718 - 3723, 2001/08
Times Cited Count：44 Percentile：76.96(Physics, Fluids & Plasmas)no abstracts in English
Agui, Akane; Yoshigoe, Akitaka; Nakatani, Takeshi*; Matsushita, Tomohiro*; Saito, Yuji; Yokoya, Akinari; Tanaka, Hitoshi*; Miyahara, Yoshikazu*; Shimada, Taihei; Takeuchi, Masao*; et al.
Review of Scientific Instruments, 72(8), p.3191 - 3197, 2001/08
Times Cited Count：21 Percentile：71.63(Instruments & Instrumentation)no abstracts in English
Ushigusa, Kenkichi; Isayama, Akihiko; Kurita, Genichi; Ishida, Shinichi; Neyatani, Yuzuru; Ishiyama, Shintaro; Kikuchi, Mitsuru; Otsuka, M.*; Sasaki, T.*; Nakagawa, S.*; et al.
Fusion Engineering and Design, 51-52, p.371 - 376, 2000/11
Times Cited Count：1 Percentile：12.1(Nuclear Science & Technology)no abstracts in English
Sugimoto, Makoto; Isono, Takaaki; Nunoya, Yoshihiko; Koizumi, Norikiyo; Nakajima, Hideo; Kato, Takashi; Matsukawa, Makoto; Hamada, Kazuya; Matsui, Kunihiro; Nishijima, Gen; et al.
IEEE Transactions on Applied Superconductivity, 10(1), p.564 - 567, 2000/03
Times Cited Count：22 Percentile：71.03(Engineering, Electrical & Electronic)no abstracts in English
Zhidkov, A. G.*; Sasaki, Akira; Tajima, Toshiki*; T.Auguste*; D'Olivera, P.*; S.Hulin*; P.Monot*; A.Y.Faenov*; T.A.Pikuz*; I.Y.Skoblev*
Physical Review E, 60(3), p.3273 - 3278, 1999/09
Times Cited Count：62 Percentile：88.8(Physics, Fluids & Plasmas)no abstracts in English
G.Meligi*; Yoshii, Fumio; Sasaki, T.; Makuuchi, Keizo; A.M.Rabie*; *
Polym. Degrad. Stab., 57, p.241 - 246, 1997/00
Times Cited Count：4 Percentile：24.45(Polymer Science)no abstracts in English
Sugimoto, Makoto; *; Isono, Takaaki; Koizumi, Norikiyo; Nakajima, Hideo; Kato, Takashi; Nishi, Masataka; Takahashi, Yoshikazu; Ando, Toshinari; Tsuji, Hiroshi; et al.
IEEE Transactions on Magnetics, 32(4), p.2328 - 2331, 1996/07
Times Cited Count：6 Percentile：50.83(Engineering, Electrical & Electronic)no abstracts in English
W.Zhao*; Hasegawa, Shin; ; Yoshii, Fumio; Sasaki, T.; Makuuchi, Keizo; J.Sun*; *
Polym. Degrad. Stab., 53, p.129 - 135, 1996/00
Times Cited Count：53 Percentile：87.4(Polymer Science)no abstracts in English
W.Zhao*; Hasegawa, Shin; ; Yoshii, Fumio; Sasaki, T.; Makuuchi, Keizo; J.Sun*; *
Polym. Degrad. Stab., 53, p.199 - 206, 1996/00
Times Cited Count：21 Percentile：65.04(Polymer Science)no abstracts in English
