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Journal Articles

Single-neutron orbits near $$^{78}$$Ni; Spectroscopy of the N=49 isotope $$^{79}$$Zn

Orlandi, R.; M$"u$cher, D.*; Raabe, R.*; Jungclaus, A.*; Pain, S. D.*; Bildstein, V.*; Chapman, R.*; De Angelis, G.*; Johansen, J. G.*; Van Duppen, P.*; et al.

Physics Letters B, 740, p.298 - 302, 2015/01

 Times Cited Count:29 Percentile:85.36(Astronomy & Astrophysics)

Journal Articles

Comparison of the spatial and temporal structure of type-I ELMs

Kirk, A.*; Asakura, Nobuyuki; Boedo, J. A.*; Beurskens, M.*; Counsell, G. F.*; Eich, T.*; Fundamenski, W.*; Herrmann, A.*; Kamada, Yutaka; Leonard, A. W.*; et al.

Journal of Physics; Conference Series, 123, p.012011_1 - 012011_10, 2008/00

 Times Cited Count:22 Percentile:97.38(Physics, Fluids & Plasmas)

A comparison of the spatial and temporal evolution of the filamentary structures observed during type I ELMs is presented from a variety of diagnostics and machines. There is evidence that these filaments can be detected inside the LCFS prior to ELMs. The filaments do not have a circular cross section instead they are elongated in the perpendicular (poloidal) direction and this size appears to increase linearly with the minor radius of the machine. The filaments start rotating toroidally/poloidally with velocities close to that of the pedestal. This velocity then decreases as the filaments propagate radially. It is most likely that the filaments have at least their initial radial velocity when they are far out into the SOL. The dominant loss mechanism is through parallel transport and the transport to the wall is through the radial propagation of these filaments. Measurements of the filament energy content show that each filament contains up to 2.5 % of the energy released by the ELM.

Journal Articles

(Nitrogen/vacancy)-complex formation in SiC; Experiment and theory

Pensl, G.*; Schmid, F.*; Reshanov, S.*; Weber, H. B.*; Bockstedte, M.*; Mattausch, A.*; Pankratov, O.*; Oshima, Takeshi; Ito, Hisayoshi

Materials Science Forum, 556-557, p.307 - 312, 2007/00

no abstracts in English

Journal Articles

Deactivation of nitrogen donors in silicon carbide

Schmid, F.*; Reshanov, S. A.*; Weber, H. B.*; Pensl, G.*; Bockstedte, M.*; Mattausch, A.*; Pankratov, O.*; Oshima, Takeshi; Ito, Hisayoshi

Physical Review B, 74(24), p.245212_1 - 245212_11, 2006/12

 Times Cited Count:11 Percentile:47.25(Materials Science, Multidisciplinary)

Hexagonal SiC is co-implanted with silicon Si$$^{+}$$, carbon C$$^{+}$$, or neon Ne$$^{+}$$ ions along with nitrogen N$$^{+}$$ ions. Also hexagonal SiC irradiated with electrons e$$^{-}$$ of 200 keV energy. During the subsequent annealing step at temperatures above 1450 $$^{circ}$$C a deactivation of N donors and a reduction of the compensation are observed in the case of the Si$$^{+}$$/N$$^{+}$$ co-implantation and e$$^{-}$$ irradiation. Using Hall measurement, the N donor deactivation is studied as a function of the concentration of the co-implanted species and the annealing temperature. The formation of energetically deep defects is analyzed with deep level transient spectroscopy. A detailed theoretical analysis based on the density functional theory is conducted; it takes into account the kinetic mechanisms for the formation of N interstitial clusters and N-vacancy complexes. In accordance with all the experimental results, this analysis distinctly indicates that the (N$$ _{C}$$)$$_ {4}$$-V$$_{Si}$$ complex, which is thermally stable at high temperatures, is responsible for the N donor deactivation.

Journal Articles

Defect-engineering in SiC by ion implantation and electron irradiation

Pensl, G.*; Ciobanu, F.*; Frank, T.*; Kirmse, D.*; Krieger, M.*; Reshanov, S.*; Schmid, F.*; Weidner, M.*; Oshima, Takeshi; Ito, Hisayoshi; et al.

Microelectronic Engineering, 83(1), p.146 - 149, 2006/01

 Times Cited Count:15 Percentile:59.32(Engineering, Electrical & Electronic)

no abstracts in English

Oral presentation

Shallow and deep defect levels in SiC

Pensl, G.*; Frank, T.*; Reshanov, S.*; Schmid, F.*; Weidner, M.*; Oshima, Takeshi; Ito, Hisayoshi

no journal, , 

no abstracts in English

Oral presentation

Low-energy states in $$^{79}$$Zn and the structure of $$^{78}$$Ni

Orlandi, R.; M$"u$cher, D.*; Raabe, R.*; Jungclaus, A.*; Pain, S. D.*; Bildstein, V.*; Chapman, R.*; De Angelis, G.*; Johansen, J. G.*; Van Duppen, P.*; et al.

no journal, , 

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