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JAEA Reports

Oxidation resistance of silicon coated by boron nitride ultra thin film

Shimoyama, Iwao; Miyauchi, Hideo*; Baba, Yuji; Sekiguchi, Tetsuhiro; Hirao, Norie*; Okuno, Kenji*

JAEA-Research 2006-039, 33 Pages, 2006/06

JAEA-Research-2006-039.pdf:2.98MB

Boron nitride (BN) ultrathin film attracts much attention as a coating material for Si cathode due to the chemical stability, heat resistance, and negative electron affinity. In order to study the oxidation resistance of BN ultrathin film coating, thermal dry oxidation is applied to BN coated Si and non-coated Si at various temperatures. X-ray photoelectron spectroscopy is devoted to clarify the modification of chemical state of the samples. The XPS spectra change by the thermal oxidation for the non-coated Si. On the other hand, it scarcely change by the thermal oxidation for the BN coated Si. The oxidation resistance in ambient air is also investigated for BN coated Si. After the several days exposure of air, the O 1s photoelectron peak is drastically enhanced. These results mean that BN ultrathin film works as protective coating for dry thermal oxidation, however it does not work in ambient air.

Journal Articles

Characterization of B-C-N hybrid prepared by ion implantation

Shimoyama, Iwao; Baba, Yuji; Sekiguchi, Tetsuhiro; Nath, K. G.; Sasaki, Masayoshi*; Okuno, Kenji*

Journal of Vacuum Science and Technology A, 21(6), p.1843 - 1848, 2003/11

 Times Cited Count:6 Percentile:28.18(Materials Science, Coatings & Films)

Ion implantation method is applied to synthesize B-C-N hybrids and their electronic structures are characterized by X-ray photoelectron spectroscopy. A boron nitride film is deposited on a graphite target by borazine plasma implantation. At the interface between the BN film and the graphite, variety of bonding combinations including B-N, B-C, and C-N are observed. This proved that B-C-N hybrids is formed by this method.

Oral presentation

An RF desing study of a high-power millimeter-wave fast switch

Nagashima, Koji*; Yamaguchi, Tomoki*; Takii, Keita*; Sekiguchi, Kenji*; Saigusa, Mikio*; Oda, Yasuhisa; Fukunari, Masafumi*; Sakamoto, Keishi

no journal, , 

no abstracts in English

Oral presentation

Loss calculation of a high-power millimeter-wave fast switch

Takii, Keita*; Yamaguchi, Tomoki*; Nagashima, Koji*; Sekiguchi, Kenji*; Saigusa, Mikio*; Oda, Yasuhisa; Fukunari, Masafumi*; Sakamoto, Keishi

no journal, , 

no abstracts in English

Oral presentation

Research and development of a high power millimeter wave fast switching device for ECCD system

Honzu, Toshihiko*; Sekiguchi, Kenji*; Mori, Junya*; Saigusa, Mikio*; Oda, Yasuhisa; Takahashi, Koji

no journal, , 

no abstracts in English

Oral presentation

Numerical simulation of power combination of high power millimeter waves by a diplexer

Mori, Junya*; Sekiguchi, Kenji*; Honzu, Toshihiko*; Saigusa, Mikio*; Oda, Yasuhisa; Ikeda, Ryosuke; Takahashi, Koji

no journal, , 

no abstracts in English

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