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Abderrahmane, A.*; Ko, P. J.*; Okada, Hiroshi*; Sato, Shinichiro; Oshima, Takeshi; Shibasaki, Ichiro*; Sandhu, A.*
IEEE Electron Device Letters, 35(12), p.1305 - 1307, 2014/12
Times Cited Count:1 Percentile:9.47(Engineering, Electrical & Electronic)Tolerance of AlInSb/InAsSb/AlInSb heterostructures quantum-well-based micro-Hall sensors against proton irradiation of 380 keV and proton fluence in the range 10 and 10 (proton/cm) is reported. Defects and deep levels induced by proton irradiation into the heterostructures caused decreases in the mobility of the micro-Hall sensors. Degradation of the magnetic sensitivity started at a proton fluence of 10 (proton/cm) and continued with increasing proton fluence. The variation of the micro-Hall sensors sensitivity was minimal in low doped AlInSb/InAsSb/AlInSb heterostructure quantum wells. These micro-Hall sensors were operable even at proton fluence of 10 (proton/cm), which makes these devices suitable for space applications with lifetime of thousands of years in the outer space.