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Journal Articles

X-ray magnetic circular dichroism study of iron-intercalated transition-metal dichalcogenide Fe$$_x$$TaS$$_2$$ with perpendicular magnetic anisotropy; Comparison with Fe$$_x$$TiS$$_2$$

Shibata, Goro; Won, C.*; Kim, J.*; Nonaka, Yosuke*; Ikeda, Keisuke*; Wan, Y.*; Suzuki, Masahiro*; Koide, Tsuneharu*; Tanaka, Arata*; Cheong, S.-W.*; et al.

Photon Factory Activity Report 2022 (Internet), 2 Pages, 2023/00

https://pfwww.kek.jp/acr/2022pdf/u_reports.html

no abstracts in English

Journal Articles

Research activities of Japanese Nuclear Data Committee in the fiscal years of 2001 and 2002

Igashira, Masayuki*; Shibata, Keiichi; Takano, Hideki*; Yamano, Naoki*; Matsunobu, Hiroyuki*; Kitao, Kensuke*; Katakura, Junichi; Nakagawa, Tsuneo; Hasegawa, Akira; Iwasaki, Tomohiko*; et al.

Nihon Genshiryoku Gakkai Wabun Rombunshi, 3(1), p.128 - 139, 2004/03

https://doi.org/10.3327/taesj2002.3.128

no abstracts in English

Journal Articles

Effects of Al composition on luminescence properties of europium implanted Al$$_{x}$$Ga$$_{1-x}$$N(0$$<$$x$$<$$1)

Nakanishi, Yasuo*; Wakahara, Akihiro*; Okada, Hiroshi*; Yoshida, Akira*; Oshima, Takeshi; Ito, Hisayoshi; Shibata, Tomohiko*; Tanaka, Mitsuhiro*

Physica Status Solidi, 0(7), p.2623 - 2626, 2003/07

In our previous study, it was reported that Eu-doped Nitride semiconductors show luminescence propetires. In this study, we investigate the relationship between luminescence properties and Al composition using Al$$_{x}$$Ga$$_{1-x}$$N(0$$<$$x$$<$$1). Al$$_{x}$$Ga$$_{1-x}$$N were grown using OMVPE. Eu atoms were doped into the samples by ion implantation (200keV). After implantation, the samples were annealed to remove residual damege. Luminescence propreties of the samples were measured using photoluminescence and cathodeluminescence. As a result, luminescence at 621 nm which relates 4f-4f transition were observed for all samples (x=0 to 1). As for intensity, samples with x=0.5 show the strongest luminescence. This result can be interpreted in terms of the internal stress of crystals by the existence of Al atoms.

Oral presentation

Development of SiC cladding for BWR application

Ishibashi, Ryo*; Hirosaka, Kazuma*; Ikegawa, Tomohiko*; Shibata, Masatoshi*; Sasaki, Masana*; Tsuchiya, Akiyuki*; Pham, V. H.; Kurata, Masaki; Nemoto, Yoshiyuki

no journal, , 

no abstracts in English

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