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-type Si at room temperatureShiko, Eiji*; Ando, Kazuya*; Kubo, Kazuki*; Saito, Eiji; Shinjo, Teruya*; Shiraishi, Seiji*
Physical Review Letters, 110(12), p.127201_1 - 127201_5, 2013/03
Times Cited Count：155 Percentile：97.32(Physics, Multidisciplinary)A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in -type silicon (-Si). Ferromagnetic resonance and effective s-d coupling in Ni
Fe
results in spin accumulation at the NiFe/-Si interface, inducing spin injection and the generation of spin current in the -Si. The pure spin current is converted to a charge current by the inverse spin Hall effect of Pd evaporated onto the -Si. This approach demonstrates the generation and transport of pure spin current in -Si at room temperature.
113 of the 113th elementMorita, Kosuke*; Morimoto, Koji*; Kaji, Daiya*; Haba, Hiromitsu*; Ozeki, Kazutaka*; Kudo, Yuki*; Sumita, Takayuki*; Wakabayashi, Yasuo*; Yoneda, Akira*; Tanaka, Kengo*; et al.
Journal of the Physical Society of Japan, 81(10), p.103201_1 - 103201_4, 2012/10
Times Cited Count：167 Percentile：97.31(Physics, Multidisciplinary)An isotope of the 113th element, 113, was produced in a nuclear reaction with a 
Zn beam on a 
Bi target. We observed six consecutive 
decays following the implantation of a heavy particle in nearly the same position in the semiconductor detector, in extremely low background condition. The fifth and sixth decays are fully consistent with the sequential decays of 
Db and 
Lr both in decay energies and decay times. This indicates that the present decay chain consisted of 113, 
Rg (Z = 111), 
Mt (Z = 109), 
Bh (Z = 107), Db (Z = 105), and Lr (Z = 103) with firm connections. This result, together with previously reported results from 2004 and 2007, conclusively leads the unambiguous production and identification of the isotope 113, of the 113th element.
