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Tagawa, Masahito*; Yokota, Kumiko*; Tsumamoto, Shinnosuke*; Sogo, Chie*; Yoshigoe, Akitaka; Teraoka, Yuden
Applied Physics Letters, 91(3), p.033504_1 - 033504_3, 2007/07
Times Cited Count：5 Percentile：22.21(Physics, Applied)A direct oxidation reaction of Si atoms on an Si(001) surface was studied by ellipsometry and synchrotron radiation photoemission spectroscopy. In-situ ellipsometry measurements when exposed to 2.7-5.0 eV O atom beams indicated that oxide growth followed a linear relationship with an O atom fluence up to an oxide thickness of 0.6-0.7 nm. In contrast, the limit of linear growth was 0.3 nm in the case of the 1.8 eV beam. These results suggest that the backbonds of Si atoms in the first layer are directly oxidized by O atom with a translational energy between 2.7-5.0 eV.
Tagawa, Masahito*; Sogo, Chie*; Yokota, Kumiko*; Yoshigoe, Akitaka; Teraoka, Yuden; Shimura, Takayoshi*
Applied Physics Letters, 88(13), p.133512_1 - 133512_3, 2006/03
Times Cited Count：8 Percentile：30.70(Physics, Applied)Synchrotron radiation photoelectron spectroscopy (SR-PES) and crystal truncation rod (CTR) scattering profiles were used to investigate an ultrathin SiO
overlayer on an Si(001) surface formed by a 5 eV O-atom beam at room temperature. The SR-PES spectra indicated that the suboxides in the O-atom-beam oxidized film were concentrated on the SiO surface rather than at the Si/SiO interface. The CTR scattering data of the O-atom-beam oxidation film had a lower intensity near (1 1 L) (0.3-L-0.8), suggesting a lower content of the SiO ordered structure in the oxide film. An inverse diffusion of the interstitial Si atoms in the oxidation kinetics can explain the data.
film formed by a hyperthermal O-atom beam at room temperatureTagawa, Masahito*; Sogo, Chie*; Yokota, Kumiko*; Hachiue, Shunsuke; Yoshigoe, Akitaka; Teraoka, Yuden
Japanese Journal of Applied Physics, 44(12), p.8300 - 8304, 2005/12
Times Cited Count：5 Percentile：21.43(Physics, Applied)Si oxide layers formed on Si(001) substrates by irradiation of hyperthermal oxygen atomic beams at room temperature were analysed at the JAERI soft X-ray beamline by photoemission spectroscopy. It was found that sub-oxide components were scarcely observed in the Si oxide layers formed by the atomic oxygen beam.
Tagawa, Masahito*; Sogo, Chie*; Miyagai, Suguru*; Yokota, Kumiko*; Yoshigoe, Akitaka; Teraoka, Yuden
no journal, ,
Ultra-thin oxide-layers on Si(001) surfaces, formed by an atomic oxygen beam with hyperthermal incident energy, were analysed by photoemission spectroscopy with synchrotron radiation. The formation of ultra-thin oxide-layers was performed in Kobe University. The photoemission spectroscopy was performed at the surface chemistry experimental station installed in the JAEA soft X-ray beamline in the SPring-8. Comparing the photoemission spectra with those of thermal oxidation with oxygen gas, it was found that a few suboxides were observed in the ultra-thin oxide-layers formed by atomic oxygem beams.
Tagawa, Masahito*; Sogo, Chie*; Yokota, Kumiko*; Yoshigoe, Akitaka; Teraoka, Yuden
no journal, ,
no abstracts in English
