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Search Results: Records 1-6 displayed on this page of 6
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Journal Articles

Vacancy defects detected by positron annihilation

Kawasuso, Atsuo; Weidener, M.*; Redmann, F.*; Frank, T.*; Sperr, P.*; K$"o$gel, G.*; Yoshikawa, Masahito; Ito, Hisayoshi; Krause-Rehberg, R.*; Triftsh$"a$user, W.*; et al.

Silicon Carbide, p.563 - 584, 2004/00

no abstracts in English

Journal Articles

Radiation-induced defects in 4H- and 6H-SiC epilayers studies by positron annihilation and deep-level transient spectroscopy

Kawasuso, Atsuo; Weidner, M.*; Redmann, F.*; Frank, T.*; Krause-Rehberg, R.*; Pensl, G.*; Sperr, P.*; Triftsh$"a$user, W.*; Ito, Hisayoshi

Materials Science Forum, 389-393, p.489 - 492, 2002/05

no abstracts in English

Journal Articles

Annealing behavior of vacancies and Z$$_{1/2}$$ levels in electron-irradiated 4H-SiC studied by positron annihilation and deep-level transient spectroscopy

Kawasuso, Atsuo; Redmann, F.*; Krause-Rehberg, R.*; Weidner, M.*; Frank, T.*; Pensl, G.*; Sperr, P.*; Triftsh$"a$user, W.*; Ito, Hisayoshi

Applied Physics Letters, 79(24), p.3950 - 3952, 2001/12

https://doi.org/10.1063/1.1426259
 Times Cited Count：39 Percentile：79.52(Physics, Applied)

no abstracts in English

Journal Articles

Vacancies in He-implanted 4H and 6H SiC epilayers studied by positron annihilation

Kawasuso, Atsuo; Weidner, M.*; Redmann, F.*; Frank, T.*; Sperr, P.*; Krause-Rehberg, R.*; Triftsh$"a$user, W.*; Pensl, G.*

Physica B; Condensed Matter, 308-310, p.660 - 663, 2001/12

https://doi.org/10.1016/S0921-4526(01)00783-9
 Times Cited Count：13 Percentile：57.97(Physics, Condensed Matter)

no abstracts in English

Journal Articles

Vacancies and deep levels in electron-irradiated 6${it H}$ SiC epilayers studied by positron annihilation and deep level transient spectroscopy

Kawasuso, Atsuo; Redmann, F.*; Krause-Rehberg, R.*; Frank, T.*; Weidner, M.*; Pensl, G.*; Sperr, P.*; Ito, Hisayoshi

Journal of Applied Physics, 90(7), p.3377 - 3382, 2001/10

https://doi.org/10.1063/1.1402144
 Times Cited Count：42 Percentile：81.14(Physics, Applied)

no abstracts in English

Journal Articles

Annealing process of defects in epitaxial SiC induced by He and electron irradiation; Positron annihilation study

Kawasuso, Atsuo; Redmann, F.*; Krause-Rehberg, R.*; Sperr, P.*; Frank, T.*; Weidner, M.*; Pensl, G.*; Ito, Hisayoshi

Materials Science Forum, 353-356, p.537 - 540, 2001/00

no abstracts in English

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