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Journal Articles

Preparation of epitaxial TiO$$_{2}$$ films by pulsed laser deposition technique

Yamamoto, Shunya; Sumita, Taishi; Sugiharuto; Miyashita, Atsumi; Naramoto, Hiroshi

Thin Solid Films, 401(1-2), p.88 - 93, 2001/12

https://doi.org/10.1016/S0040-6090(01)01636-4
 Times Cited Count：129 Percentile：96.77(Materials Science, Multidisciplinary)

The epitaxial growth of high-quality TiO$$_{2}$$ films has attracted much interest from the viewpoints of basic science and applications. In this study, it is shown that TiO$$_{2}$$ films with anatase and rutile structure can be prepared by pulsed laser deposition (PLD) with a Nd-YAG laser under the controlled O$$_{2}$$ atmosphere. The TiO$$_{2}$$ films with 200 nm thickness were prepared on the SrTiO$$_{3}$$, LaAlO$$_{3}$$, LSAT and $$alpha$$-Al$$_{2}$$O$$_{3}$$ single crystal substrates. The epitaxial films were analyzed by Rutherford backscattering spectrometry (RBS) combined with channeling and X-ray diffraction for the crystallographic relationships with the substrates. The high quality anatase TiO$$_{2}$$ (001) films have been successfully prepared on the LaAlO$$_{3}$$ (001), LSAT (001) and SrTiO$$_{3}$$ (001) substrates about 500$$^{circ}$$C substrate temperature. Also the high quality rutile TiO$$_{2}$$ (100) and TiO$$_{2}$$ (001) films were obtained on the $$alpha$$-Al$$_{2}$$O$$_{3}$$ (0001) and (10$$bar{1}$$0), respectively.

Journal Articles

Preparation of TiO$$_{2}$$-anatase film on Si(001) substrate with TiN and SrTiO$$_{3}$$ as buffer layers

Sugiharuto; Yamamoto, Shunya; Sumita, Taishi; Miyashita, Atsumi

Journal of Physics; Condensed Matter, 13(13), p.2875 - 2881, 2001/04

https://doi.org/10.1088/0953-8984/13/13/302
 Times Cited Count：15 Percentile：61.85(Physics, Condensed Matter)

An epitaxial TiO$$_{2}$$-anatase thin film was grown on the Si(001) substrate with SrTiO$$_{3}$$/TiN as the buffer layers by pulsed laser deposition technique under an oxygen gas supply. The characterization of the epitaxial TiO$$_{2}$$-anatase film was performed using the X-ray diffraction method. The crystallographic relationships between the TiO$$_{2}$$-anatase film and SrTiO$$_{3}$$/TiN buffer layers were analyzed by the $$theta$$-2$$theta$$ scan and pole figure measurement. The growth direction of the films was determined as $$rm TiO_{2}langle 001rangle$$ / $$rm SrTiO_{3}langle 001rangle$$ / $$rm TiNlangle 001rangle$$ / $$rm Silangle 001rangle$$ and their in-plane relationship $$rm TiO_{2}{110}$$ // $$rm SrTiO_{3}{100}$$ // $$rm TiN{100}$$ // $$rm Si{100}$$. The crystalline quality of TiO$$_{2}$$-anatase was examined by the rocking curve analysis. The composition of the thin film packaging was characterized by Rutherford backscattering spectrometry (RBS) using 2.0 MeV $$^{4}$$He beam.

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