Refine your search:     
Report No.
 - 
Search Results: Records 1-20 displayed on this page of 55

Presentation/Publication Type

Initialising ...

Refine

Journal/Book Title

Initialising ...

Meeting title

Initialising ...

First Author

Initialising ...

Keyword

Initialising ...

Language

Initialising ...

Publication Year

Initialising ...

Held year of conference

Initialising ...

Save select records

Journal Articles

Development and application of a $$^3$$He neutron spin filter at J-PARC

Okudaira, Takuya; Oku, Takayuki; Ino, Takashi*; Hayashida, Hirotoshi*; Kira, Hiroshi*; Sakai, Kenji; Hiroi, Kosuke; Takahashi, Shingo*; Aizawa, Kazuya; Endo, Hitoshi*; et al.

Nuclear Instruments and Methods in Physics Research A, 977, p.164301_1 - 164301_8, 2020/10

 Times Cited Count:4 Percentile:76.41(Instruments & Instrumentation)

Journal Articles

Development of fission product chemistry database ECUME for the LWR severe accident

Miwa, Shuhei; Nakajima, Kunihisa; Miyahara, Naoya; Nishioka, Shunichiro; Suzuki, Eriko; Horiguchi, Naoki; Liu, J.; Miradji, F.; Imoto, Jumpei; Afiqa, B. M.; et al.

Mechanical Engineering Journal (Internet), 7(3), p.19-00537_1 - 19-00537_11, 2020/06

We constructed the fission product (FP) chemistry database named ECUME for LWR severe accident. This version of ECUME is equipped with dataset of the chemical reactions and their kinetics constants for the reactions of cesium(Cs)-iodine(I)-boron(B)-molybdenum(Mo)-oxygen(O)-hydrogen(H) system in gas phase, the elemental model for the high temperature chemical reaction of Cs with stainless steel applied as the structural material in a reactor, and thermodynamic data for CsBO$$_{2}$$ vapor species and solids of Cs$$_{2}$$Si$$_{4}$$O$$_{9}$$ and CsFeSiO$$_{4}$$ for these chemical reactions. The ECUME will provide estimation of Cs distribution due to the evaluation of effects of interaction with BWR control material B and stainless steel on Cs behavior in the Fukushima Daiichi Nuclear Power Station.

Journal Articles

Development of fission product chemistry database ECUME for the LWR severe accident

Miwa, Shuhei; Miyahara, Naoya; Nakajima, Kunihisa; Nishioka, Shunichiro; Suzuki, Eriko; Horiguchi, Naoki; Liu, J.; Miradji, F.; Imoto, Jumpei; Afiqa, B. M.; et al.

Proceedings of 27th International Conference on Nuclear Engineering (ICONE-27) (Internet), 8 Pages, 2019/05

We constructed the first version of fission product (FP) chemistry database named ECUME for LWR severe accident. The first version of ECUME is equipped with dataset of the chemical reactions and their kinetics constants for the reactions of cesium(Cs)-iodine(I)-boron(B)-molybdenum(Mo)-oxygen(O)-hydrogen(H) system in gas phase, the elemental model for the high temperature chemical reaction of Cs with stainless steel, and thermodynamic data for CsBO$$_{2}$$ vapor species and solids of Cs$$_{2}$$Si$$_{4}$$O$$_{9}$$ and CsFeSiO$$_{4}$$. The ECUME will provide more accurate estimation of Cs distribution due to the evaluation of effects of interaction with BWR control material B and stainless steel on Cs behavior in the Fukushima Daiichi Nuclear Power Station.

Journal Articles

Materials and Life Science Experimental Facility (MLF) at the Japan Proton Accelerator Research Complex, 2; Neutron scattering instruments

Nakajima, Kenji; Kawakita, Yukinobu; Ito, Shinichi*; Abe, Jun*; Aizawa, Kazuya; Aoki, Hiroyuki; Endo, Hitoshi*; Fujita, Masaki*; Funakoshi, Kenichi*; Gong, W.*; et al.

Quantum Beam Science (Internet), 1(3), p.9_1 - 9_59, 2017/12

The neutron instruments suite, installed at the spallation neutron source of the Materials and Life Science Experimental Facility (MLF) at the Japan Proton Accelerator Research Complex (J-PARC), is reviewed. MLF has 23 neutron beam ports and 21 instruments are in operation for user programs or are under commissioning. A unique and challenging instrumental suite in MLF has been realized via combination of a high-performance neutron source, optimized for neutron scattering, and unique instruments using cutting-edge technologies. All instruments are/will serve in world-leading investigations in a broad range of fields, from fundamental physics to industrial applications. In this review, overviews, characteristic features, and typical applications of the individual instruments are mentioned.

Journal Articles

Real-time observation of rotational twin formation during molecular-beam epitaxial growth of GaAs on Si (111) by X-ray diffraction

Suzuki, Hidetoshi*; Nakata, Yuka*; Takahashi, Masamitsu; Ikeda, Kazuma*; Oshita, Yoshio*; Morohara, Osamu*; Geka, Hirotaka*; Moriyasu, Yoshitaka*

AIP Advances (Internet), 6(3), p.035303_1 - 035303_6, 2016/03

 Times Cited Count:4 Percentile:25.92(Nanoscience & Nanotechnology)

Journal Articles

Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using ${{it in situ}}$ X-ray diffraction

Shimomura, Kenichi*; Suzuki, Hidetoshi*; Sasaki, Takuo; Takahashi, Masamitsu; Oshita, Yoshio*; Kamiya, Itaru*

Journal of Applied Physics, 118(18), p.185303_1 - 185303_7, 2015/11

 Times Cited Count:7 Percentile:37.13(Physics, Applied)

Journal Articles

${it In situ}$ three-dimensional X-ray reciprocal-space mapping of InGaAs multilayer structures grown on GaAs(001) by MBE

Sasaki, Takuo; Takahashi, Masamitsu; Suzuki, Hidetoshi*; Oshita, Yoshio*; Yamaguchi, Masafumi*

Journal of Crystal Growth, 425, p.13 - 15, 2015/09

 Times Cited Count:3 Percentile:34(Crystallography)

Journal Articles

Real-time observation of crystallographic tilting InGaAs layers on GaAs offcut substrates

Nishi, Toshiaki*; Sasaki, Takuo; Ikeda, Kazuma*; Suzuki, Hidetoshi*; Takahashi, Masamitsu; Shimomura, Kenichi*; Kojima, Nobuaki*; Oshita, Yoshio*; Yamaguchi, Masafumi*

AIP Conference Proceedings 1556, p.14 - 17, 2013/09

 Times Cited Count:0 Percentile:0.01

Journal Articles

In situ three-dimensional X-ray reciprocal-space mapping of GaAs epitaxial films on Si(001)

Takahashi, Masamitsu; Nakata, Yuka*; Suzuki, Hidetoshi*; Ikeda, Kazuma*; Kozu, Miwa; Hu, W.; Oshita, Yoshio*

Journal of Crystal Growth, 378, p.34 - 36, 2013/09

 Times Cited Count:5 Percentile:45.92(Crystallography)

Journal Articles

High-speed three-dimensional reciprocal-space mapping during molecular beam epitaxy growth of InGaAs

Hu, W.; Suzuki, Hidetoshi*; Sasaki, Takuo*; Kozu, Miwa*; Takahashi, Masamitsu

Journal of Applied Crystallography, 45(5), p.1046 - 1053, 2012/10

 Times Cited Count:10 Percentile:70.93(Chemistry, Multidisciplinary)

Journal Articles

Observation of in-plane asymmetric strain relaxation during crystal growth and growth interruption in InGaAs/GaAs(001)

Sasaki, Takuo*; Shimomura, Kenichi*; Suzuki, Hidetoshi*; Takahashi, Masamitsu; Kamiya, Itaru*; Oshita, Yoshio*; Yamaguchi, Masafumi*

Japanese Journal of Applied Physics, 51(2), p.02BP01_1 - 02BP01_3, 2012/02

 Times Cited Count:2 Percentile:10.01(Physics, Applied)

Journal Articles

Real-time structural analysis of compositionally graded InGaAs/GaAs(001) layers

Sasaki, Takuo*; Suzuki, Hidetoshi*; Inagaki, Makoto*; Ikeda, Kazuma*; Shimomura, Kenichi*; Takahashi, Masamitsu; Kozu, Miwa*; Hu, W.; Kamiya, Itaru*; Oshita, Yoshio*; et al.

IEEE Journal of Photovoltaics, 2(1), p.35 - 40, 2012/01

 Times Cited Count:5 Percentile:25.16(Energy & Fuels)

Journal Articles

X-ray reciprocal space mapping of dislocation-mediated strain relaxation during InGaAs/GaAs(001) epitaxial growth

Sasaki, Takuo*; Suzuki, Hidetoshi*; Takahashi, Masamitsu; Oshita, Yoshio*; Kamiya, Itaru*; Yamaguchi, Masafumi*

Journal of Applied Physics, 110(11), p.113502_1 - 113502_7, 2011/12

 Times Cited Count:11 Percentile:47.47(Physics, Applied)

Journal Articles

Neutron diffraction measurements of internal strain in Nb$$_{3}$$Sn cable-in-conduit conductors

Hemmi, Tsutomu; Harjo, S.; Ito, Takayoshi; Matsui, Kunihiro; Nunoya, Yoshihiko; Koizumi, Norikiyo; Takahashi, Yoshikazu; Nakajima, Hideo; Aizawa, Kazuya; Suzuki, Hiroshi; et al.

IEEE Transactions on Applied Superconductivity, 21(3), p.2028 - 2031, 2011/06

 Times Cited Count:9 Percentile:50.14(Engineering, Electrical & Electronic)

Residual strain in conductors is caused by the difference in the coefficient of expansion between Nb$$_{3}$$Sn strands and the jacket over a temperature range of 5 - 923 K. The superconducting properties of strands vary significantly, depending on the strain. It is important to clarify the residual strain as part of the evaluation of superconducting performance. However, the residual strain of strands in the conductor has not been measured so far because of their complicated configuration and their location in a jacket. The engineering materials diffractometer "Takumi" in J-PARC can measure residual strain with a relative accuracy of around 0.02%, using neutron diffraction. In this study, the Takumi was applied to the measurement of residual strain in strands for the ITER TF conductor. Results indicate that the residual strain of strands in the conductor can be determined, thereby clarifying the mechanism of residual strain and its relationship to superconducting performance.

Journal Articles

Growth temperature dependence of strain relaxation during InGaAs/GaAs(0 0 1) heteroepitaxy

Sasaki, Takuo*; Suzuki, Hidetoshi*; Sai, Akihisa*; Takahashi, Masamitsu; Fujikawa, Seiji; Kamiya, Itaru*; Oshita, Yoshio*; Yamaguchi, Masafumi*

Journal of Crystal Growth, 323(1), p.13 - 16, 2011/05

 Times Cited Count:17 Percentile:82.2(Crystallography)

Growth temperature dependence of strain relaxation during In$$_{0.12}]$$Ga$$_{0.88}$$As/GaAs(001) molecular beam epitaxy was studied by in situ X-ray reciprocal space mapping. Evolution of the residual strain and crystal quality for the InGaAs film was obtained as a function of film thickness at growth temperatures of 420, 445 and 477 $$^{circ}$$C. In the early stages of strain relaxation, it was found that evolution of the residual strain and crystal quality was dependent on the growth temperature. In order to discuss this observation quantitatively, the strain relaxation model was proposed based on the Dodson-Tsao kinetic model, and its validity was demonstrated by good agreement with the experimental residual strain. Additionally, rate coefficients reflecting dislocation motions during strain relaxation were obtained as a function of growth temperature and strain relaxation was discussed in terms of the thermally active dislocation motion.

Journal Articles

Real-time observation of anisotropic strain relaxation by three-dimensional reciprocal space mapping during InGaAs/GaAs(001) growth

Suzuki, Hidetoshi*; Sasaki, Takuo*; Sai, Akihisa*; Oshita, Yoshio*; Kamiya, Itaru*; Yamaguchi, Masafumi*; Takahashi, Masamitsu; Fujikawa, Seiji

Applied Physics Letters, 97(4), p.041906_1 - 041906_3, 2010/07

 Times Cited Count:30 Percentile:76.37(Physics, Applied)

Journal Articles

In situ study of strain relaxation mechanisms during lattice-mismatched InGaAs/GaAs growth by X-ray reciprocal space mapping

Sasaki, Takuo*; Suzuki, Hidetoshi*; Sai, Akihisa*; Takahashi, Masamitsu; Fujikawa, Seiji; Oshita, Yoshio*; Yamaguchi, Masafumi*

Materials Research Society Symposium Proceedings, Vol.1268, 6 Pages, 2010/05

 Times Cited Count:0 Percentile:0.01

Journal Articles

${it In situ}$ real-time X-Ray reciprocal space mapping during InGaAs/GaAs growth for understanding strain relaxation mechanisms

Sasaki, Takuo*; Suzuki, Hidetoshi*; Sai, Akihisa*; Lee, J.-H.*; Takahashi, Masamitsu; Fujikawa, Seiji; Arafune, Koji*; Kamiya, Itaru*; Oshita, Yoshio*; Yamaguchi, Masafumi*

Applied Physics Express, 2, p.085501_1 - 085501_3, 2009/07

 Times Cited Count:34 Percentile:78.52(Physics, Applied)

Journal Articles

Gridization of IMAGINE, dose calculation system, for the remote assistance of radiation therapy

Saito, Kimiaki; Teshima, Naoya; Suzuki, Yoshio; Nakajima, Norihiro; Saito, Hidetoshi*; Kunieda, Etsuo*; Fujisaki, Tatsuya*

FUJITSU Famirikai Rombunshu (Internet), 20 Pages, 2009/02

We research and develop IMAGINE as the dose calculation system, which can calculate the dose distribution in the patient body very fast and with high precision by a super parallel calculation, for the contribution to QoS of the radiation therapy and the development of the eading-edge treatment technology. When IMAGINE system will be actually operated, it is anticipated that IMAGINE system accepts the large amount of requests of the dose calculation from several radiotherapy facilities at the same time. So, we entertained that the dose calculation was distributed by the gridization of IMAGINE system and the waiting time of its was minimized. In this article, we introduce the problem about the gridization of IMAGINE system, the solution to it and the method to easily enable the gridization of the application without the programming skill.

Journal Articles

Water transport properties of crosslinked-PTFE based electrolyte membranes

Sawada, Shinichi; Yamaki, Tetsuya; Nishimura, Hidetoshi*; Asano, Masaharu; Suzuki, Akihiro*; Terai, Takayuki*; Maekawa, Yasunari

Solid State Ionics, 179(27-32), p.1611 - 1614, 2008/09

 Times Cited Count:12 Percentile:50.42(Chemistry, Physical)

We measured the self-diffusion coefficient of water, D, in proton exchange membranes (PEMs) based on crosslinked polytetrafluoroethylene (PTFE) films by a radiotracer-permeation method using tritium labeled water (HTO). When the crosslinking density of the PTFE matrix increased, the D value became smaller. This decreasing trend coincided with that of a water-content parameter, $$lambda$$, defined as the number of water molecules per sulfonic acid (SO$$_{3}$$H) group. According to the model assumption of hydrophilic regions, the relationship between the D and $$lambda$$ indicates that the amount of free water in the crosslinked-PTFE PEMs could be lower than that in the non-crosslinked one, thereby restricting the mobility of water molecules through strong interactions between the majority of water and SO$$_{3}$$H groups.

55 (Records 1-20 displayed on this page)