Improvement of model for cesium chemisorption onto stainless steel in severe accident analysis code SAMPSON (Joint research)

Miwa, Shuhei; Karasawa, Hidetoshi; Nakajima, Kunihisa; Kino, Chiaki*; Suzuki, Eriko; Imoto, Jumpei

JAEA-Data/Code 2021-022, 32 Pages, 2023/01

JAEA-Data-Code-2021-022.pdf:1.41MB
JAEA-Data-Code-2021-022(errata).pdf:0.17MB

The improved model for cesium (Cs) chemisorption onto stainless steel (SS) in the fission product (FP) chemistry database named ECUME was incorporated into the severe accident (SA) analysis code SAMPSON for the more accurate estimation of Cs distribution within nuclear reactor vessels in the TEPCO's Fukushima Daiichi Nuclear Power Station (1F). The SAMPSON with the improved model was verified based on the analysis results reproducing the experimental results which were subjected to the modeling of Cs chemisorption behavior. Then, the experiment in the facility with the temperature gradient tube to simulate SA conditions such as temperature decrease and aerosol formation was analyzed to confirm availability of the improved model to the analysis of Cs chemisorption onto SS. The SAMPSON with the improved model successfully reproduced the experimental results, which indicates that the improved model and the analytical method such as setting a method of node-junction, models of aerosol formation and the calculation method of saturated CsOH vapor pressure can be applicable to the analysis of Cs chemisorption behavior. As the information on water-solubility of Cs deposits was also prerequisite to estimate the Cs distribution in the 1F because Cs can be transported through aqueous phase after the SA, the water-solubility of chemisorbed Cs compounds was investigated. The chemisorbed compounds on SS304 have been identified to CsFeO at 873 K to 973 K with higher water-solubility, CsFeSiO at 973 K to 1273 K and CsSiO at 1073 K to 1273 K with lower water-solubility. From these results, the water-solubility of chemisorbed Cs compounds can be estimated according to the SA analysis conditions such as temperature in the reactor and the CsOH concentration affecting the amount of chemisorbed Cs.

Development of fission product chemistry database ECUME for the LWR severe accident

Miwa, Shuhei; Nakajima, Kunihisa; Miyahara, Naoya; Nishioka, Shunichiro; Suzuki, Eriko; Horiguchi, Naoki; Liu, J.; Miradji, F.; Imoto, Jumpei; Afiqa, B. M.; et al.

Mechanical Engineering Journal (Internet), 7(3), p.19-00537_1 - 19-00537_11, 2020/06

https://doi.org/10.1299/mej.19-00537

We constructed the fission product (FP) chemistry database named ECUME for LWR severe accident. This version of ECUME is equipped with dataset of the chemical reactions and their kinetics constants for the reactions of cesium(Cs)-iodine(I)-boron(B)-molybdenum(Mo)-oxygen(O)-hydrogen(H) system in gas phase, the elemental model for the high temperature chemical reaction of Cs with stainless steel applied as the structural material in a reactor, and thermodynamic data for CsBO vapor species and solids of CsSiO and CsFeSiO for these chemical reactions. The ECUME will provide estimation of Cs distribution due to the evaluation of effects of interaction with BWR control material B and stainless steel on Cs behavior in the Fukushima Daiichi Nuclear Power Station.

Materials and Life Science Experimental Facility (MLF) at the Japan Proton Accelerator Research Complex, 2; Neutron scattering instruments

Nakajima, Kenji; Kawakita, Yukinobu; Ito, Shinichi*; Abe, Jun*; Aizawa, Kazuya; Aoki, Hiroyuki; Endo, Hitoshi*; Fujita, Masaki*; Funakoshi, Kenichi*; Gong, W.*; et al.

Quantum Beam Science (Internet), 1(3), p.9_1 - 9_59, 2017/12

https://doi.org/10.3390/qubs1030009

The neutron instruments suite, installed at the spallation neutron source of the Materials and Life Science Experimental Facility (MLF) at the Japan Proton Accelerator Research Complex (J-PARC), is reviewed. MLF has 23 neutron beam ports and 21 instruments are in operation for user programs or are under commissioning. A unique and challenging instrumental suite in MLF has been realized via combination of a high-performance neutron source, optimized for neutron scattering, and unique instruments using cutting-edge technologies. All instruments are/will serve in world-leading investigations in a broad range of fields, from fundamental physics to industrial applications. In this review, overviews, characteristic features, and typical applications of the individual instruments are mentioned.

Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using X-ray diffraction

Shimomura, Kenichi*; Suzuki, Hidetoshi*; Sasaki, Takuo; Takahashi, Masamitsu; Oshita, Yoshio*; Kamiya, Itaru*

Journal of Applied Physics, 118(18), p.185303_1 - 185303_7, 2015/11

https://doi.org/10.1063/1.4935456

Development of space solar sheet with inverted triple-junction cells

Yamaguchi, Hiroshi*; Ijichi, Ryo*; Suzuki, Yoshiyuki*; Ooka, Sachiyo*; Shimada, Keiji*; Takahashi, Naoki*; Washio, Hidetoshi*; Nakamura, Kazuyo*; Takamoto, Tatsuya*; Imaizumi, Mitsuru*; et al.

Proceedings of 42nd IEEE Photovoltaic Specialists Conference (PVSC-42) (CD-ROM), p.2407 - 2411, 2015/06

https://doi.org/10.1109/PVSC.2015.7356138

In situ three-dimensional X-ray reciprocal-space mapping of GaAs epitaxial films on Si(001)

Takahashi, Masamitsu; Nakata, Yuka*; Suzuki, Hidetoshi*; Ikeda, Kazuma*; Kozu, Miwa; Hu, W.; Oshita, Yoshio*

Journal of Crystal Growth, 378, p.34 - 36, 2013/09

https://doi.org/10.1016/j.jcrysgro.2012.12.119

Observation of in-plane asymmetric strain relaxation during crystal growth and growth interruption in InGaAs/GaAs(001)

Sasaki, Takuo*; Shimomura, Kenichi*; Suzuki, Hidetoshi*; Takahashi, Masamitsu; Kamiya, Itaru*; Oshita, Yoshio*; Yamaguchi, Masafumi*

Japanese Journal of Applied Physics, 51(2), p.02BP01_1 - 02BP01_3, 2012/02

https://doi.org/10.1143/JJAP.51.02BP01

X-ray reciprocal space mapping of dislocation-mediated strain relaxation during InGaAs/GaAs(001) epitaxial growth

Sasaki, Takuo*; Suzuki, Hidetoshi*; Takahashi, Masamitsu; Oshita, Yoshio*; Kamiya, Itaru*; Yamaguchi, Masafumi*

Journal of Applied Physics, 110(11), p.113502_1 - 113502_7, 2011/12

https://doi.org/10.1063/1.3664832

Growth temperature dependence of strain relaxation during InGaAs/GaAs(0 0 1) heteroepitaxy

Sasaki, Takuo*; Suzuki, Hidetoshi*; Sai, Akihisa*; Takahashi, Masamitsu; Fujikawa, Seiji; Kamiya, Itaru*; Oshita, Yoshio*; Yamaguchi, Masafumi*

Journal of Crystal Growth, 323(1), p.13 - 16, 2011/05

https://doi.org/10.1016/j.jcrysgro.2010.10.005

Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) molecular beam epitaxy was studied by in situ X-ray reciprocal space mapping. Evolution of the residual strain and crystal quality for the InGaAs film was obtained as a function of film thickness at growth temperatures of 420, 445 and 477 C. In the early stages of strain relaxation, it was found that evolution of the residual strain and crystal quality was dependent on the growth temperature. In order to discuss this observation quantitatively, the strain relaxation model was proposed based on the Dodson-Tsao kinetic model, and its validity was demonstrated by good agreement with the experimental residual strain. Additionally, rate coefficients reflecting dislocation motions during strain relaxation were obtained as a function of growth temperature and strain relaxation was discussed in terms of the thermally active dislocation motion.

In situ study of strain relaxation mechanisms during lattice-mismatched InGaAs/GaAs growth by X-ray reciprocal space mapping

Sasaki, Takuo*; Suzuki, Hidetoshi*; Sai, Akihisa*; Takahashi, Masamitsu; Fujikawa, Seiji; Oshita, Yoshio*; Yamaguchi, Masafumi*

Materials Research Society Symposium Proceedings, Vol.1268, 6 Pages, 2010/05

https://doi.org/10.1557/PROC-1268-EE06-02