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Journal Articles

High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

Iwamoto, Naoya*; Azarov, A.*; Oshima, Takeshi; Moe, A. M. M.*; Svensson, B. G.*

Journal of Applied Physics, 118(4), p.045705_1 - 045705_8, 2015/07

 Times Cited Count:2 Percentile:85.44(Physics, Applied)

Journal Articles

Negative-U system of carbon vacancy in 4H-SiC

Son, N. T.*; Trinh, X. T.*; L${o}$vile, L. S.*; Svensson, B. G.*; Kawahara, Kotaro*; Suda, Jun*; Kimoto, Tsunenobu*; Umeda, Takahide*; Isoya, Junichi*; Makino, Takahiro; et al.

Physical Review Letters, 109(18), p.187603_1 - 187603_5, 2012/11

 Times Cited Count:128 Percentile:2.31(Physics, Multidisciplinary)

Journal Articles

Magnetic resonance studies of defects in electron-irradiated ZnO substrates

Son, N. T.*; Ivanov, I. G.*; Kuznetsov, A. Yu.*; Svensson, B. G.*; Zhao, Q. X.*; Willander, M.*; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; Isoya, Junichi*; et al.

Physica B; Condensed Matter, 401-402, p.507 - 510, 2007/12

 Times Cited Count:3 Percentile:80.11(Physics, Condensed Matter)

Defects in electron-irradiated (3, 6 MeV) ZnO substrates were investigated using optical detection of magnetic response (ODMR). The shallow donor and the Zn vacancy were detected. In addition, several ODMR centers with S=$$frac{1}{2}$$ were also observed. Among these, LU3 and LU4 shows a behavior as recombination centers. After annealing at 400$$^{circ}$$C, both LU3 and LU4 still remain in ZnO substrates.

Journal Articles

Recombination centers in as-grown and electron-irradiated ZnO substrates

Son, N. T.*; Ivanov, G.*; Kuznetsov, A.*; Svensson, B. G.*; Zhao, Q. X.*; Willander, M.*; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; Isoya, Junichi*; et al.

Journal of Applied Physics, 102(9), p.093504_1 - 093504_5, 2007/11

 Times Cited Count:16 Percentile:42.62(Physics, Applied)

Optical detection of magnetic resonance (ODMR) was performed to investigate defects in ZnO irradiated with 3 MeV electrons at room temperature. As a result, the Zn vacancy and some other centers were detected by ODMR. The Zn vacancy and two other centers whish are labeled as LU3 and LU4, were also commonly observed in different types of as-grown ZnO. Therefore, it can be concluded that the both LU3 and LU4 might be related to intrinsic defects, and they act as dominating recombination centers in irradiated and as-grown ZnO.

Oral presentation

The Carbon vacancy in SiC

Son, N. T.*; Trinh, X. T.*; Suda, Jun*; Kimoto, Tsunenobu*; L${o}$vile, L. S.*; Svensson, B. G.*; Szasz, K.*; Hornos, T.*; Gali, A.*; Umeda, Takahide*; et al.

no journal, , 

no abstracts in English

Oral presentation

SKB GWFTS task force: Predictive modeling of a matrix diffusion experiment in gneiss at ONKALO (Finland)

Soler, J. M.*; L$"o$fgren, M.*; Nilsson, K.*; Lanyon, G. W.*; Gylling, B.*; Vidstrand, P.*; Neretnieks, I.*; Moreno, L.*; Liu, L.*; Meng, S.*; et al.

no journal, , 

The GWFTS Task Force is an international forum in the area of modeling of groundwater flow and solute transport in fractured rock. The WPDE experiments are matrix diffusion experiments in gneiss performed at the ONKALO underground facility in Finland. Synthetic groundwater containing several conservative and sorbing radiotracers was injected along a borehole interval. The objective of Task 9A of Task Force was the predictive modeling of the tracer breakthrough curves from the WPDE experiments. Several teams, using different modeling approaches, participated in this exercise. An important conclusion from this exercise is that the modeling results were very sensitive to the magnitude of dispersion in the borehole opening, which is related to the flow of water. Focusing on the tails of the breakthrough curves, which are more directly related to matrix diffusion and sorption, the results from the different teams were more comparable.

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