Electrical and magnetic properties of quasicrystal approximants RCd (R: rare earth)

Mori, Akinobu*; Ota, Hisashi*; Yoshiuchi, Shingo*; Iwakawa, Ken*; Taga, Yuki*; Hirose, Yusuke*; Takeuchi, Tetsuya*; Yamamoto, Etsuji; Haga, Yoshinori; Honda, Fuminori*; et al.

Journal of the Physical Society of Japan, 81(2), p.024720_1 - 024720_10, 2012/02

https://doi.org/10.1143/JPSJ.81.024720

The Study on the plastic solidification of low level radioactive wastes from the reprocessing plant

Ando, Hiroshi*; Taga, Junichi*; Matsuura, Hiroyuki*; Yasumura, Keijiro*; Minami, Yuji*; Tomura, Hisashi*; Tomita, Toshihide*

PNC TJ101 84-15, 370 Pages, 1984/10

PNC-TJ101-84-15.pdf:26.43MB

None

Comparison of initial oxidation kinetics between p- and n-type Si(001) surfaces studied by real-time photoelectron spectroscopy

Sekihata, Yuki*; Ogawa, Shuichi*; Yoshigoe, Akitaka; Taga, Ryo*; Ishizuka, Shinji*; Takakuwa, Yuji*

no journal, , 

In this study, we investigated the oxidation reaction kinetics on p- and n-type Si surfaces using real-time ultraviolet photoelectron spectroscopy. In the room temperature oxidation, it is found that oxidation reaction coefficient on n-Si(001) is larger than that on p-Si(001). The work function of the n-Si(001) surface shows negative value but p-Si(001) is positive value. From this result, we can estimate the adsorption positions of O atoms. O atoms have a negative charge in the bond of Si-O, so it can be assumed that oxygen is placed on the n-Si(001) surfaces, but it is subsurface in case of the p-Si(001) surface. In case of n-Si(001) substrates, the doped electrons spill out into the surface because many electrons exist in the substrate. As the result, oxidation reaction is promoted in the n-Si(001) surface. From these results, we found that there is a difference of oxidation kinetics depending on the conductivity.