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Mori, Akinobu*; Ota, Hisashi*; Yoshiuchi, Shingo*; Iwakawa, Ken*; Taga, Yuki*; Hirose, Yusuke*; Takeuchi, Tetsuya*; Yamamoto, Etsuji; Haga, Yoshinori; Honda, Fuminori*; et al.
Journal of the Physical Society of Japan, 81(2), p.024720_1 - 024720_10, 2012/02
Times Cited Count:42 Percentile:83.88(Physics, Multidisciplinary)Hattori, Takanori; Taga, Naohito*; Takasugi, Yukinobu*; Kinoshita, Tomohiro*; Narushima, Takashi*; Tsuji, Kazuhiko*; Kikegawa, Takumi*
Photon Factory Activity Report 2005, Part A, p.42 - 43, 2006/11
no abstracts in English
Ando, Hiroshi*; Taga, Junichi*; Matsuura, Hiroyuki*; Yasumura, Keijiro*; Minami, Yuji*; Tomura, Hisashi*; Tomita, Toshihide*
PNC TJ101 84-15, 370 Pages, 1984/10
None
Ando, Hiroshi*; Taga, Junichi*; Matsuura, Hiroyuki*; ; Minami, Yuji*;
PNC TJ101 83-03, 129 Pages, 1983/05
no abstracts in English
Sekihata, Yuki*; Ogawa, Shuichi*; Yoshigoe, Akitaka; Taga, Ryo*; Ishizuka, Shinji*; Takakuwa, Yuji*
no journal, ,
In this study, we investigated the oxidation reaction kinetics on p- and n-type Si surfaces using real-time ultraviolet photoelectron spectroscopy. In the room temperature oxidation, it is found that oxidation reaction coefficient on n-Si(001) is larger than that on p-Si(001). The work function of the n-Si(001) surface shows negative value but p-Si(001) is positive value. From this result, we can estimate the adsorption positions of O atoms. O atoms have a negative charge in the bond of Si-O, so it can be assumed that oxygen is placed on the n-Si(001) surfaces, but it is subsurface in case of the p-Si(001) surface. In case of n-Si(001) substrates, the doped electrons spill out into the surface because many electrons exist in the substrate. As the result, oxidation reaction is promoted in the n-Si(001) surface. From these results, we found that there is a difference of oxidation kinetics depending on the conductivity.