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Iguchi, Tetsuo*; Hasegawa, Makoto; Takahashi, Kuniaki; Enokido, Yuji*
Dekomisshoningu Giho, (52), p.12 - 19, 2015/09
no abstracts in English
Ishigami, Keisuke*; Yoshimatsu, Kohei*; Toyota, Daisuke*; Takizawa, Masaru*; Yoshida, Teppei*; Shibata, Goro*; Harano, Takayuki*; Takahashi, Yukio*; Kadono, Toshiharu*; Verma, V. K.*; et al.
Physical Review B, 92(6), p.064402_1 - 064402_5, 2015/08
Times Cited Count:46 Percentile:84.59(Materials Science, Multidisciplinary)Takahashi, Yukio*; Kadono, Toshiharu*; Yamamoto, Shimpei*; Singh, V. R.*; Verma, V.*; Ishigami, Keisuke*; Shibata, Goro*; Harano, Takayuki*; Takeda, Yukiharu; Okane, Tetsuo; et al.
Physical Review B, 90(2), p.024423_1 - 024423_5, 2014/07
Times Cited Count:11 Percentile:44.28(Materials Science, Multidisciplinary)Sakanaka, Shogo*; Akemoto, Mitsuo*; Aoto, Tomohiro*; Arakawa, Dai*; Asaoka, Seiji*; Enomoto, Atsushi*; Fukuda, Shigeki*; Furukawa, Kazuro*; Furuya, Takaaki*; Haga, Kaiichi*; et al.
Proceedings of 1st International Particle Accelerator Conference (IPAC '10) (Internet), p.2338 - 2340, 2010/05
Future synchrotron light source using a 5-GeV energy recovery linac (ERL) is under proposal by our Japanese collaboration team, and we are conducting R&D efforts for that. We are developing high-brightness DC photocathode guns, two types of cryomodules for both injector and main superconducting (SC) linacs, and 1.3 GHz high CW-power RF sources. We are also constructing the Compact ERL (cERL) for demonstrating the recirculation of low-emittance, high-current beams using above-mentioned critical technologies.
Yamasaki, Chisato*; Murakami, Katsuhiko*; Fujii, Yasuyuki*; Sato, Yoshiharu*; Harada, Erimi*; Takeda, Junichi*; Taniya, Takayuki*; Sakate, Ryuichi*; Kikugawa, Shingo*; Shimada, Makoto*; et al.
Nucleic Acids Research, 36(Database), p.D793 - D799, 2008/01
Times Cited Count:52 Percentile:71.76(Biochemistry & Molecular Biology)Here we report the new features and improvements in our latest release of the H-Invitational Database, a comprehensive annotation resource for human genes and transcripts. H-InvDB, originally developed as an integrated database of the human transcriptome based on extensive annotation of large sets of fulllength cDNA (FLcDNA) clones, now provides annotation for 120 558 human mRNAs extracted from the International Nucleotide Sequence Databases (INSD), in addition to 54 978 human FLcDNAs, in the latest release H-InvDB. We mapped those human transcripts onto the human genome sequences (NCBI build 36.1) and determined 34 699 human gene clusters, which could define 34 057 protein-coding and 642 non-protein-coding loci; 858 transcribed loci overlapped with predicted pseudogenes.
Abe, Tetsuo*; Onishi, Kazunori*; Takahashi, Yoshihiro*; Hirao, Toshio
Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.157 - 160, 2004/10
no abstracts in English
Oshima, Takeshi; Lee, K. K.; Ishida, Yuki*; Kojima, Kazutoshi*; Tanaka, Yasunori*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Okumura, Hajime*; Arai, Kazuo*; Kamiya, Tomihiro
Materials Science Forum, 457-460(Part2), p.1405 - 1408, 2004/06
The electrical characteristics of cubic silicon carbide (3C-SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with the current direction in the inversion layer perpendicular to [-110] ([-110]-perpendicular MOSFETs) were compared to those of 3C-SiC MOSFETs with the current direction in the inversion layer parallel to [-110] ([-110]-parallel MOSFETs). The threshold voltage (V) for both MOSFETs shows -0.5 V although enhancement type MOSFETs were designed. The values of channel mobility which was estimated from linear region of drain current (I) - drain voltage (V) curves are 230 cm/Vs for [-110]-perpendicular MOSFETs and 215 cm/Vs for [-110]-parallel MOSFETs, indicating no significant difference between both MOSFETs. The value of I for [-110]-perpendicular MOSFETs is of order of 10-8 A at V = 10V and gate voltage (V) of -2V. However, for [-110]-parallel MOSFETs, I shows of order of -10-6 A at V = 10V and V = -2V.
Oshima, Takeshi; Lee, K. K.; Ishida, Yuki*; Kojima, Kazutoshi*; Tanaka, Yasunori*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Okumura, Hajime*; Arai, Kazuo*; Kamiya, Tomihiro
Japanese Journal of Applied Physics, Part 2, 42(6B), p.L625 - L627, 2003/06
Times Cited Count:39 Percentile:77.34(Physics, Applied)The n-channel Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) were fabricated on cubic silicon carbide (3C-SiC) epitaxial layers grown on 3C-SiC substrates. The gate oxide of the MOSFETs was formed using pyrogenic oxidation at 1100C. The 3C-SiC MOSFETs showed enhancement type behaviors after annealing at 200C for 30 min in argon atmosphere. The maximum value of the effective channel mobility of the 3C-SiC MOSFETs was 260 cm/Vs. The leakage current of gate oxide was of a few tens of nA/cm at an electric field range below 8.5 MV/cm, and breakdown began around 8.5 MV/cm.
Yoshikawa, Masahito; Ishida, Yuki*; Jikimoto, Tamotsu*; Hijikata, Yasuto*; Ito, Hisayoshi; Okumura, Hajime*; Takahashi, Tetsuo*; Tsuchida, Hidekazu*; Yoshida, Sadafumi*
Denshi Joho Tsushin Gakkai Rombunshi, C, 86(4), p.426 - 433, 2003/04
no abstracts in English
Ishida, Yuki*; Takahashi, Tetsuo*; Okumura, Hajime*; Jikimoto, Tamotsu*; Tsuchida, Hidekazu*; Yoshikawa, Masahito; Tomioka, Yuichi*; Midorikawa, Masahiko*; Hijikata, Yasuto*; Yoshida, Sadafumi*
Materials Science Forum, 389-393, p.1013 - 1016, 2002/00
Times Cited Count:4 Percentile:20.27(Materials Science, Multidisciplinary)no abstracts in English
Oura, Masaki*; Yamaoka, Hitoshi*; Kawatsura, Kiyoshi*; Kimata, Junichi*; Hayaishi, T.*; Takahashi, Takehisa*; Koizumi, Tetsuo*; Sekioka, T.*; Terasawa, Michitaka*; Ito, Yo*; et al.
Physical Review A, 63(1), p.014704_1 - 014704_4, 2001/01
Times Cited Count:15 Percentile:59.73(Optics)no abstracts in English
Oshima, Takeshi; Ito, Hisayoshi; Uedono, Akira*; Suzuki, Ryoichi*; Ishida, Yuki*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Kojima, Kazutoshi; Odaira, Toshiyuki*; Nashiyama, Isamu; et al.
Denshi Gijutsu Sogo Kenkyujo Iho, 62(10-11), p.469 - 476, 1999/00
no abstracts in English
Ushigusa, Kenkichi; Mori, Katsuharu*; ; Nagashima, Keisuke; ; ; Aoyagi, Tetsuo; Takahashi, Yoshikazu; Matsui, Kunihiro; Kikuchi, Mitsuru; et al.
JAERI-Research 97-027, 281 Pages, 1997/03
no abstracts in English
Kikuchi, Mitsuru; ; ; Miya, Naoyuki; Ushigusa, Kenkichi; Nagashima, Keisuke; Aoyagi, Tetsuo; ; Neyatani, Yuzuru; Naito, Osamu; et al.
JAERI-Research 97-026, 70 Pages, 1997/03
no abstracts in English
Oshima, Takeshi; Yoshikawa, Masahito; Ito, Hisayoshi; Takahashi, Tetsuo*; Okumura, Hajime*; Yoshida, Sadafumi*; Nashiyama, Isamu
Silicon Carbide and Related Materials 1995 (Institute of Physics Conf. Series,No. 142), 0, p.801 - 804, 1996/00
no abstracts in English
Ukibe, M.*; Nakazawa, Masaharu*; Iguchi, Tetsuo*; Takahashi, Hiroyuki*; Kishimoto, Maki; Katagiri, Masaki; Kurakado, M.*
Hoshasen, 21(4), p.67 - 72, 1995/00
no abstracts in English
Tamaoki, Tetsuo*; Takahashi, Ryoichi*
Nuclear Engineering and Design, 136(3), p.389 - 399, 1992/08
Times Cited Count:2 Percentile:27.41(Nuclear Science & Technology)None
Tamaoki, Tetsuo*; Sakai, Takuhiko*; Endo, Hiroshi*; Haga, Kazuo; Takahashi, Ryoichi*
Nuclear Technology, 99(1), p.58 - 69, 1992/07
Times Cited Count:0 Percentile:0.01(Nuclear Science & Technology)None
Sato, Masuo*; Fukawa, Naohiro*; Tamaoki, Tetsuo*; Takahashi, Hideji*; Ito, Atsushi*; Yoshida, Megumi*; Sonoda, Yukio*; Yamamoto, Kazuhiko*; Maruyama, Fumi*
PNC TJ9164 89-003, 200 Pages, 1989/03
In nuclear power plant, we need to realize the computerization for the management of the plant operation and maintenance. Especially, in a periodic inspection, lots of works are concentrated. A great deal of man power is required for examining the permission of works, publishing the component isolation tags and making or revising the documents to control the schedules. Recently, in Light Water Reactor, a lot or computerization systems are developed. We design the plant management system in consideration of the characteristics of a Fast Breeder Reactor. We embody the softwear methods and hardwear systems widely to systematize the plant management technology that is accumulated at the experimental reactor JOYO. We can expect an economization and an inprovment of realiability and efficiency of the plant management.
Matoba, Shiro; Moriya, Sosuke*; Koizumi, Tetsuo*; Ishikawa, Manabu*; Takahashi, Karin*; Shiromaru, Haruo*
no journal, ,