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Journal Articles

SIMS analyses of SiO$$_{2}$$/4H-SiC(0001) interface

Yamashita, Kenya*; Kitabatake, Makoto*; Kusumoto, Osamu*; Takahashi, Kunimasa*; Uchida, Masao*; Miyanaga, Ryoko*; Ito, Hisayoshi; Yoshikawa, Masahito

Materials Science Forum, 389-393, p.1037 - 1040, 2002/00

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1037
 Times Cited Count：3 Percentile：15.53(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Steam annealing effects on CV characteristics of MOS structures on (11$$bar{2}$$0) face of 4H-SiC

Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Takahashi, Kunimasa*; Kitabatake, Makoto*

Materials Science Forum, 353-356, p.635 - 638, 2001/00

no abstracts in English

Journal Articles

Effects of steam annealing on CV characteristics of 4H-SiC MOS structures

Yoshikawa, Masahito; Takahashi, Kunimasa*; Oshima, Takeshi; Kitabatake, Makoto*; Ito, Hisayoshi

Proceedings of 1st International Workshop on Ultra-Low-Loss Power Device Technology (UPD2000), p.199 - 200, 2000/00

no abstracts in English

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