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Journal Articles

Effects of growth temperature and growth rate on polytypes in gold-catalyzed GaAs nanowires studied by in situ X-ray diffraction

Takahashi, Masamitsu; Kozu, Miwa*; Sasaki, Takuo

Japanese Journal of Applied Physics, 55(4S), p.04EJ04_1 - 04EJ04_4, 2016/04

 Times Cited Count:4 Percentile:25.92(Physics, Applied)

Journal Articles

Real-time observation of rotational twin formation during molecular-beam epitaxial growth of GaAs on Si (111) by X-ray diffraction

Suzuki, Hidetoshi*; Nakata, Yuka*; Takahashi, Masamitsu; Ikeda, Kazuma*; Oshita, Yoshio*; Morohara, Osamu*; Geka, Hirotaka*; Moriyasu, Yoshitaka*

AIP Advances (Internet), 6(3), p.035303_1 - 035303_6, 2016/03

 Times Cited Count:4 Percentile:25.92(Nanoscience & Nanotechnology)

Journal Articles

Anomalous lattice deformation in GaN/SiC(0001) measured by high-speed ${{it in situ}}$ synchrotron X-ray diffraction

Sasaki, Takuo; Ishikawa, Fumitaro*; Takahashi, Masamitsu

Applied Physics Letters, 108(1), p.012102_1 - 012102_5, 2016/01


 Times Cited Count:1 Percentile:6.36(Physics, Applied)

Journal Articles

Direct observation of strain in InAs quantum dots and cap layer during molecular beam epitaxial growth using ${{it in situ}}$ X-ray diffraction

Shimomura, Kenichi*; Suzuki, Hidetoshi*; Sasaki, Takuo; Takahashi, Masamitsu; Oshita, Yoshio*; Kamiya, Itaru*

Journal of Applied Physics, 118(18), p.185303_1 - 185303_7, 2015/11

 Times Cited Count:7 Percentile:37.13(Physics, Applied)

Journal Articles

Mechanisms determining the structure of gold-catalyzed GaAs nanowires studied by in situ X-ray diffraction

Takahashi, Masamitsu; Kozu, Miwa*; Sasaki, Takuo; Hu, W.*

Crystal Growth & Design, 15(10), p.4979 - 4985, 2015/10

 Times Cited Count:12 Percentile:73.32(Chemistry, Multidisciplinary)

Journal Articles

Strain analysis of III-V epitaxial growth by ${{it in situ}}$ synchrotron X-ray diffraction

Sasaki, Takuo; Takahashi, Masamitsu

Nihon Kessho Seicho Gakkai-Shi, 42(3), p.210 - 217, 2015/10


Journal Articles

Journal Articles

${it In situ}$ three-dimensional X-ray reciprocal-space mapping of InGaAs multilayer structures grown on GaAs(001) by MBE

Sasaki, Takuo; Takahashi, Masamitsu; Suzuki, Hidetoshi*; Oshita, Yoshio*; Yamaguchi, Masafumi*

Journal of Crystal Growth, 425, p.13 - 15, 2015/09

 Times Cited Count:3 Percentile:34(Crystallography)

Journal Articles

Spontaneous formation of suboxidic coordination around Co in ferromagnetic rutile Ti$$_{0.95}$$Co$$_{0.05}$$O$$_2$$ film

Hu, W.*; Hayashi, Koichi*; Fukumura, Tomoteru*; Akagi, Kazuto*; Tsukada, Masaru*; Happo, Naohisa*; Hosokawa, Shinya*; Owada, Kenji; Takahashi, Masamitsu; Suzuki, Motohiro*; et al.

Applied Physics Letters, 106(22), p.222403_1 - 222403_5, 2015/06

 Times Cited Count:33 Percentile:82.92(Physics, Applied)

Journal Articles

Role of liquid indium in the structural purity of wurtzite InAs nanowires that grow on Si(111)

Biermanns, A.*; Dimakis, E.*; Davydok, A.*; Sasaki, Takuo; Geelhaar, L.*; Takahashi, Masamitsu; Pietsch, U.*

Nano Letters, 14(12), p.6878 - 6883, 2014/12

 Times Cited Count:24 Percentile:75.15(Chemistry, Multidisciplinary)

Journal Articles

Anomalous temperature dependence of current-induced torques in CoFeB/MgO heterostructures with Ta-based underlayers

Kim, J.*; Sinha, J.*; Mitani, Seiji*; Hayashi, Masamitsu*; Takahashi, Saburo*; Maekawa, Sadamichi; Yamanouchi, Michihiko*; Ono, Hideo*

Physical Review B, 89(17), p.174424_1 - 174424_8, 2014/05

 Times Cited Count:81 Percentile:94.83(Materials Science, Multidisciplinary)

We have studied the underlayer thickness and temperature dependencies of the current-induced effective field in CoFeB/MgO heterostructures with Ta-based underlayers. The underlayer thickness at which the effective field saturates is found to be different between the two orthogonal components of the effective field; i.e., the dampinglike term tends to saturate at a smaller underlayer thickness than the fieldlike term. For large underlayer thickness films in which the effective field saturates, we find that the measurement temperature significantly influences the size of the effective field. A striking difference is found in the temperature dependence of the two components: the dampinglike term decreases whereas the fieldlike term increases with increasing temperature. Using a simple spin diffusion-spin transfer model, we find that all of these results can be accounted for provided the real and imaginary parts of an effective spin mixing conductance are negative. These results imply that either spin transport in this system is different from conventional metallic interfaces or effects other than spin diffusion into the magnetic layer need to be taken into account in order to model the system accurately.

Journal Articles

Acute and obtuse rhombohedrons in the local structures of relaxor ferroelectric Pb(Mg$$_{1/3}$$Nb$$_{2/3}$$)O$$_3$$

Hu, W.*; Hayashi, Koichi*; Owada, Kenji; Chen, J.*; Happo, Naohisa*; Hosokawa, Shinya*; Takahashi, Masamitsu; Bokov, A.*; Ye, Z.-G*

Physical Review B, 89(14), p.140103_1 - 140103_5, 2014/04

 Times Cited Count:38 Percentile:85.24(Materials Science, Multidisciplinary)

Journal Articles

Monitoring of airborne $$^{14}$$C discharge at RI facilities; A Comparison of collection and oxidation methods

Ueno, Yumi; Koarashi, Jun; Iwai, Yasunori; Sato, Junya; Takahashi, Teruhiko; Sawahata, Katsunori; Sekita, Tsutomu; Kobayashi, Makoto; Tsunoda, Masahiko; Kikuchi, Masamitsu

Hoken Butsuri, 49(1), p.39 - 44, 2014/03

The Japan Atomic Energy Agency has conducted a monthly monitoring of airborne $$^{14}$$C discharge at the forth research building (RI facility) of the Tokai Research and Development Center. In the current monitoring, $$^{14}$$C, which exists in various chemical forms in airborne effluent, is converted into $$^{14}$$CO$$_{2}$$ with CuO catalyst and then collected using monoethanolamine (MEA) as CO$$_{2}$$ absorbent. However, this collection method has some issues on safety management because the CuO catalyst requires a high heating temperature (600$$^{circ}$$C) to ensure a high oxidation efficiency and the MEA is specified as a poisonous and deleterious substance. To establish a safer, manageable and reliable method for monitoring airborne $$^{14}$$C discharge, we examined collection methods that use different CO$$_{2}$$ absorbents (MEA and Carbo-Sorb E) and oxidation catalysts (CuO, Pt/Alumina and Pd/ZrO$$_{2}$$). The results showed 100% CO$$_{2}$$ collection efficiency of MEA during a 30-day sampling period under the condition tested. In contrast, Carbo-Sorb E was found to be unsuitable for the monthly-long CO$$_{2}$$ collection because of its high volatile nature. Among the oxidation catalysts, the Pd/ZrO$$_{2}$$ showed the highest oxidation efficiency for CH$$_{4}$$ at a lower temperature.

Journal Articles

Defect characterization in compositionally graded InGaAs layers on GaAs (001) grown by MBE

Sasaki, Takuo; Norman, A. G.*; Romero, M. J.*; Al-Jassim, M. M.*; Takahashi, Masamitsu; Kojima, Nobuaki*; Oshita, Yoshio*; Yamaguchi, Masafumi*

Physica Status Solidi (C), 10(11), p.1640 - 1643, 2013/11

 Times Cited Count:3 Percentile:81.12

Journal Articles

Real-time observation of crystallographic tilting InGaAs layers on GaAs offcut substrates

Nishi, Toshiaki*; Sasaki, Takuo; Ikeda, Kazuma*; Suzuki, Hidetoshi*; Takahashi, Masamitsu; Shimomura, Kenichi*; Kojima, Nobuaki*; Oshita, Yoshio*; Yamaguchi, Masafumi*

AIP Conference Proceedings 1556, p.14 - 17, 2013/09

 Times Cited Count:0 Percentile:0.01

Journal Articles

In situ three-dimensional X-ray reciprocal-space mapping of GaAs epitaxial films on Si(001)

Takahashi, Masamitsu; Nakata, Yuka*; Suzuki, Hidetoshi*; Ikeda, Kazuma*; Kozu, Miwa; Hu, W.; Oshita, Yoshio*

Journal of Crystal Growth, 378, p.34 - 36, 2013/09

 Times Cited Count:5 Percentile:45.92(Crystallography)

Journal Articles

Quantitative monitoring of InAs quantum dot growth using X-ray diffraction

Takahashi, Masamitsu

Journal of Crystal Growth, 401, p.372 - 375, 2013/09

 Times Cited Count:2 Percentile:24.15(Crystallography)

Journal Articles

X-ray micro-beam focusing system for in situ investigation of single nanowire during MBE growth

Hu, W.; Takahashi, Masamitsu; Kozu, Miwa*; Nakata, Yuka*

Journal of Physics; Conference Series, 425(20), p.202010_1 - 202010_4, 2013/03

 Times Cited Count:1 Percentile:57.77

Journal Articles

X-ray diffraction study of crystal growth dynamics during molecular-beam epitaxy of III-V semiconductors

Takahashi, Masamitsu

Journal of the Physical Society of Japan, 82(2), p.021011_1 - 021011_14, 2013/02

 Times Cited Count:7 Percentile:51.13(Physics, Multidisciplinary)

Journal Articles

High-speed three-dimensional reciprocal-space mapping during molecular beam epitaxy growth of InGaAs

Hu, W.; Suzuki, Hidetoshi*; Sasaki, Takuo*; Kozu, Miwa*; Takahashi, Masamitsu

Journal of Applied Crystallography, 45(5), p.1046 - 1053, 2012/10

 Times Cited Count:10 Percentile:70.93(Chemistry, Multidisciplinary)

137 (Records 1-20 displayed on this page)