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Journal Articles

High-sensitive XANES analysis at Ce L$$_{2}$$-edge for Ce in bauxites using transition-edge sensors; Implications for Ti-rich geological samples

Li, W.*; Yamada, Shinya*; Hashimoto, Tadashi; Okumura, Takuma*; Hayakawa, Ryota*; Nitta, Kiyofumi*; Sekizawa, Oki*; Suga, Hiroki*; Uruga, Tomoya*; Ichinohe, Yuto*; et al.

Analytica Chimica Acta, 1240, p.340755_1 - 340755_9, 2023/02

 Times Cited Count:1 Percentile:31.09(Chemistry, Analytical)

no abstracts in English

Journal Articles

Measurement of the transverse asymmetry of $$gamma$$ rays in the $$^{117}$$Sn($$n,gamma$$)$$^{118}$$Sn reaction

Endo, Shunsuke; Okudaira, Takuya*; Abe, Ryota*; Fujioka, Hiroyuki*; Hirota, Katsuya*; Kimura, Atsushi; Kitaguchi, Masaaki*; Oku, Takayuki; Sakai, Kenji; Shima, Tatsushi*; et al.

Physical Review C, 106(6), p.064601_1 - 064601_7, 2022/12

 Times Cited Count:1 Percentile:47.37(Physics, Nuclear)

no abstracts in English

Journal Articles

Dynamical response of transition-edge sensor microcalorimeters to a pulsed charged-particle beam

Okumura, Takuma*; Azuma, Toshiyuki*; Bennet, D. A.*; Caradonna, P.*; Chiu, I.-H.*; Doriese, W. B.*; Durkin, M. S.*; Fowler, J. W.*; Gard, J. D.*; Hashimoto, Tadashi; et al.

IEEE Transactions on Applied Superconductivity, 31(5), p.2101704_1 - 2101704_4, 2021/08

 Times Cited Count:1 Percentile:15.5(Engineering, Electrical & Electronic)

A superconducting transition-edge sensor (TES) microcalorimeter is an ideal X-ray detector for experiments at accelerator facilities because of good energy resolution and high efficiency. To study the performance of the TES detector with a high-intensity pulsed charged-particle beam, we measured X-ray spectra with a pulsed muon beam at the Japan Proton Accelerator Research Complex (J-PARC) in Japan. We found substantial temporal shifts of the X-ray energy correlated with the arrival time of the pulsed muon beam, which was reasonably explained by pulse pileup due to the incidence of energetic particles from the initial pulsed beam.

Journal Articles

Deexcitation dynamics of muonic atoms revealed by high-precision spectroscopy of electronic $$K$$ X rays

Okumura, Takuma*; Azuma, Toshiyuki*; Bennet, D. A.*; Caradonna, P.*; Chiu, I. H.*; Doriese, W. B.*; Durkin, M. S.*; Fowler, J. W.*; Gard, J. D.*; Hashimoto, Tadashi; et al.

Physical Review Letters, 127(5), p.053001_1 - 053001_7, 2021/07

 Times Cited Count:9 Percentile:76.2(Physics, Multidisciplinary)

We observed electronic $$K$$X rays emitted from muonic iron atoms using a superconducting transition-edge-type sensor microcalorimeter. The energy resolution of 5.2 eV in FWHM allowed us to observe the asymmetric broad profile of the electronic characteristic $$K$$$$alpha$$ and $$K$$$$beta$$ X rays together with the hypersatellite $$K$$$$alpha$$ X rays around 6 keV. This signature reflects the time-dependent screening of the nuclear charge by the negative muon and the $$L$$-shell electrons, accompanied by electron side-feeding. Assisted by a simulation, this data clearly reveals the electronic $$K$$- and $$L$$-shell hole production and their temporal evolution during the muon cascade process.

Journal Articles

Competing spin modulations in the magnetically frustrated semimetal EuCuSb

Takahashi, Hidefumi*; Aono, Kai*; Nambu, Yusuke*; Kiyanagi, Ryoji; Nomoto, Takuya*; Sakano, Masato*; Ishizaka, Kyoko*; Arita, Ryotaro*; Ishiwata, Shintaro*

Physical Review B, 102(17), p.174425_1 - 174425_6, 2020/11

 Times Cited Count:7 Percentile:50.44(Materials Science, Multidisciplinary)

The competing magnetic ground states of the itinerant magnet EuCuSb, which has a hexagonal layered structure, were studied via magnetization, resistivity, and neutron-diffraction measurements on single-crystal samples. EuCuSb has a three-dimensional semimetallic band structure as confirmed by band calculation and angle-resolved photoelectron spectroscopy, consistent with the nearly isotropic metallic conductivity in the paramagnetic state. However, below the antiferromagnetic transition temperature of $$T$$$$_{rm N1}$$ (8.5 K), the resistivity, especially along the hexagonal axis, increases significantly. This implies the emergence of anisotropic magnetic ordering coupled to the conducting electrons. Neutron-diffraction measurements show that the Eu spins, which order ferromagnetically within each layer, are collinearly modulated (up-up-down-down) along the hexagonal axis below $$T$$$$_{rm N1}$$, followed by the partial emergence of helical spin modulation below $$T$$$$_{rm N2}$$ (6 K). Based on the observation of anomalous magnetoresistance with hysteretic behavior, we discuss the competing nature of the ground state inherent in a frustrated Heisenberg-like spin system with a centrosymmetric structure.

Journal Articles

Out-of-plane strain induced in a Moir$'e$ superstructure of monolayer MoS$$_{2}$$ and MoSe$$_{2}$$ on Au(111)

Yasuda, Satoshi; Takahashi, Ryosuke*; Osaka, Ryo*; Kumagai, Ryota*; Miyata, Yasumitsu*; Okada, Susumu*; Hayamizu, Yuhei*; Murakoshi, Kei*

Small, 13(31), p.1700748_1 - 1700748_8, 2017/08

 Times Cited Count:17 Percentile:64.61(Chemistry, Multidisciplinary)

MoS$$_{2}$$ and MoSe$$_{2}$$ monolayers are grown on Au surface by chemical vapor deposition and it is demonstrated that the contact with a crystalline Au(111) surface gives rise to only out-of-plane strain in both MoS$$_{2}$$ and MoSe$$_{2}$$ layers, whereas no strain generation is observed on polycrystalline Au or SiO$$_{2}$$/Si surfaces. Scanning tunneling microscopy analysis provides information regarding consequent specific adsorption sites between lower S (Se) atoms in the S-Mo-S (Se-Mo-Se) structure and Au atoms via unique moir$'e$ superstructure formation for MoS$$_{2}$$ and MoSe$$_{2}$$ layers on Au(111). This observation indicates that the specific adsorption sites give rise to out-of-plane strain in the TMDC layers. Furthermore, it also leads to effective modulation of the electronic structure of the MoS$$_{2}$$ or MoSe$$_{2}$$ layer.

Journal Articles

Fabrication of Pt nanoparticle incorporated polymer nanowires by high energy ion and electron beam irradiation

Tsukuda, Satoshi*; Takahashi, Ryota*; Seki, Shuhei*; Sugimoto, Masaki; Idesaki, Akira; Yoshikawa, Masahito; Tanaka, Shunichiro*

Radiation Physics and Chemistry, 118, p.16 - 20, 2016/01

 Times Cited Count:1 Percentile:11.24(Chemistry, Physical)

Polyvinylpyrrolidone (PVP)-Pt nanoparticles (NPs) hybrid nanowires were fabricated by high energy ion beam irradiation to PVP thin films including H$$_{2}$$PtCl$$_{6}$$. Single ion hitting caused crosslinking reactions of PVP and reduction of Pt ions within local cylindrical area along an ion trajectory (ion track); therefore, the PVP nanowires including Pt NPs were formed and isolated on Si substrate after wet-development procedure. The number of Pt NPs was easily controlled by the mixed ratio of PVP and H$$_{2}$$PtCl$$_{6}$$. However, increasing the amount of H$$_{2}$$PtCl$$_{6}$$ led to decreasing the radial size and separation of the hybrid nanowires during the wet-development. Additional electron beam irradiation after ion beam improved separation of the nanowires and controlled radial sizes due to an increase in the density of crosslinking points inner the nanowires.

Journal Articles

Controls over structural and electronic properties of epitaxial graphene on silicon using surface termination of 3C-SiC(111)/Si

Fukidome, Hirokazu*; Abe, Shunsuke*; Takahashi, Ryota*; Imaizumi, Kei*; Inomata, Shuya*; Handa, Hiroyuki*; Saito, Eiji*; Enta, Yoshiharu*; Yoshigoe, Akitaka; Teraoka, Yuden; et al.

Applied Physics Express, 4(11), p.115104_1 - 115104_3, 2011/11

 Times Cited Count:35 Percentile:79.1(Physics, Applied)

Journal Articles

Control of epitaxy of graphene by crystallographic orientation of a Si substrate toward device applications

Fukidome, Hirokazu*; Takahashi, Ryota*; Abe, Shunsuke*; Imaizumi, Kei*; Handa, Hiroyuki*; Kang, H. C.*; Karasawa, Hiromi*; Suemitsu, Tetsuya*; Otsuji, Taiichi*; Enta, Yoshiharu*; et al.

Journal of Materials Chemistry, 21(43), p.17242 - 17248, 2011/11

 Times Cited Count:28 Percentile:64.29(Chemistry, Physical)

Journal Articles

Low-energy-electron-diffraction and X-ray-phototelectron-spectroscopy studies of graphitization of 3C-SiC(111) thin film on Si(111) substrate

Takahashi, Ryota*; Handa, Hiroyuki*; Abe, Shunsuke*; Imaizumi, Kei*; Fukidome, Hirokazu*; Yoshigoe, Akitaka; Teraoka, Yuden; Suemitsu, Maki*

Japanese Journal of Applied Physics, 50(7), p.070103_1 - 070103_6, 2011/07

 Times Cited Count:31 Percentile:76.01(Physics, Applied)

Journal Articles

Oxygen-induced reduction of the graphitization temperature of SiC surface

Imaizumi, Kei*; Handa, Hiroyuki*; Takahashi, Ryota*; Saito, Eiji*; Fukidome, Hirokazu*; Enta, Yoshiharu*; Teraoka, Yuden; Yoshigoe, Akitaka; Suemitsu, Maki*

Japanese Journal of Applied Physics, 50(7), p.070105_1 - 070105_6, 2011/07

 Times Cited Count:4 Percentile:19.4(Physics, Applied)

Journal Articles

X-ray and neutron protein crystallographic analysis of the trypsin-BPTI complex

Kawamura, Kenji*; Yamada, Taro*; Kurihara, Kazuo; Tamada, Taro; Kuroki, Ryota; Tanaka, Ichiro*; Takahashi, Haruyuki*; Niimura, Nobuo*

Acta Crystallographica Section D, 67(2), p.140 - 148, 2011/02

 Times Cited Count:28 Percentile:88.97(Biochemical Research Methods)

Journal Articles

Growth of large protein crystals by a large-scale hanging-drop method

Kakinouchi, Keisuke*; Nakamura, Tsutomu*; Tamada, Taro; Adachi, Hiroaki*; Sugiyama, Shigeru*; Maruyama, Mihoko*; Takahashi, Yoshinori*; Takano, Kazufumi*; Murakami, Satoshi*; Inoue, Tsuyoshi*; et al.

Journal of Applied Crystallography, 43(4), p.937 - 939, 2010/08

 Times Cited Count:4 Percentile:48.82(Chemistry, Multidisciplinary)

A method for growing large protein crystals is described. In this method, a cut pipette tip is used to hang large-scale droplets (maximum volume 200 $$mu$$l) consisting of protein and precipitating agents. A crystal grows at the vapor-liquid interface; thereafter the grown crystal can be retrieved by droplet-droplet contact both for repeated macroseeding and for mounting crystals in a capillary. Crystallization experiments with peroxiredoxin of ${it Aeropyrum pernix}$ K1(thioredoxin peroxidase, ApTPx) and hen egg white lysozyme demonstrated that this large-scale hanging-drop method could produce a large-volume crystal very effectively. A neutron diffraction experiment confirmed that an ApTPx crystal (6.2 mm$$^{3}$$) obtained by this method diffracted to beyond 3.5 ${AA}$ resolution.

Journal Articles

Crystal growth procedure of HIV-1 protease-inhibitor KNI-272 complex for neutron structural analysis at 1.9 ${AA}$ resolution

Shimizu, Noriko*; Sugiyama, Shigeru*; Maruyama, Mihoko*; Takahashi, Yoshinori*; Adachi, Motoyasu; Tamada, Taro; Hidaka, Koshi*; Hayashi, Yoshio*; Kimura, Toru*; Kiso, Yoshiaki*; et al.

Crystal Growth & Design, 10(7), p.2990 - 2994, 2010/06

 Times Cited Count:11 Percentile:72.37(Chemistry, Multidisciplinary)

We report crystal growth of human immunodeficiency virus 1 protease (HIV PR) in a complex with its inhibitor KNI-272 by six different methods. Comparative analysis indicates that top-seeded solution growth (TSSG) and TSSG combined with the floating and stirring technique (TSSG-FAST) are efficient strategies for rapidly obtaining large single crystals and effectively preventing polycrystallization of the seed crystal. Neutron diffraction analysis confirmed that the crystalobtained by TSSG is a high-quality single crystal. Furthermore, crystal shape was observed to be influenced by solution flow, suggesting that the degree of supersaturation significantly affects the crystal growth direction of HIV PR complex. This finding implies that the shape of the HIV PR complex crystal might be controlled by the solution flow rate.

Journal Articles

Recent progress in the energy recovery linac project in Japan

Sakanaka, Shogo*; Akemoto, Mitsuo*; Aoto, Tomohiro*; Arakawa, Dai*; Asaoka, Seiji*; Enomoto, Atsushi*; Fukuda, Shigeki*; Furukawa, Kazuro*; Furuya, Takaaki*; Haga, Kaiichi*; et al.

Proceedings of 1st International Particle Accelerator Conference (IPAC '10) (Internet), p.2338 - 2340, 2010/05

Future synchrotron light source using a 5-GeV energy recovery linac (ERL) is under proposal by our Japanese collaboration team, and we are conducting R&D efforts for that. We are developing high-brightness DC photocathode guns, two types of cryomodules for both injector and main superconducting (SC) linacs, and 1.3 GHz high CW-power RF sources. We are also constructing the Compact ERL (cERL) for demonstrating the recirculation of low-emittance, high-current beams using above-mentioned critical technologies.

Oral presentation

Epitaxy of graphene on Si substrates toward three-dimensional graphene devices

Fukidome, Hirokazu*; Miyamoto, Yu*; Handa, Hiroyuki*; Takahashi, Ryota*; Imaizumi, Kei*; Suemitsu, Maki*; Yoshigoe, Akitaka; Teraoka, Yuden

no journal, , 

Graphene, two-dimensional network of sp$$^{2}$$ carbon, is one of promising materials beyond CMOS, as described in the semiconductor roadmap. The major issue is a lack of reasonable process for epitaxial growth on substrates. In fact, current production methods, such as exfoliation from graphite and epitaxy on SiC single crystals, are not mass-productive. We are seeking the ways to develop graphene-on-silicon (3D-GOS) process to match recent trends of silicon technologies. One of key issues toward 3D-GOS is the formation of epitaxial graphene on main plane directions of silicon, such as (100), (110) and (111). In this article, large area epitaxy of graphene on Si(110), Si(100) and Si(111) is presented. The result must be a good news because it can open new and realistic ways to three-dimensionally fabricate graphene-based devices beyond CMOS.

Oral presentation

LEED observation for surface structure of graphene on silicon

Takahashi, Ryota*; Miyamoto, Yu*; Handa, Hiroyuki*; Saito, Eiji*; Imaizumi, Kei*; Fukidome, Hirokazu*; Suemitsu, Maki*; Teraoka, Yuden; Yoshigoe, Akitaka

no journal, , 

We have succeeded to form graphene films from 3C-SiC layer on Si substrate by thermal annealing in vacuum (graphene on silicon technique:GOS). In this study, surface structures were observed by LEED and XPS methods to make clear the GOS formation mechanisms. SiC-1$$times$$1 LEED pattern was observed at 3C-SiC(111) surface on the Si substrate showing periodicity of bulk SiC. After graphene formation treatments of 1523 K thermal annealing for 30 min, graphene 1$$times$$1 pattern was observed showing periodicity of graphene. The graphene (1$$times$$1) spots were tilted by 30 deg comparing to the bulk SiC (1$$times$$1) spots. C1s-XPS observation revealed that a peak corresponding to sp$$^{2}$$ bonding increased with decreasing SiC bulk peak. Consequently, graphene formation from 3C-SiC on Si substrate is same as that on 6H-SiC(0001) substrate.

Oral presentation

Reduction of graphitization temperature of SiC surface by addition of oxygen

Imaizumi, Kei*; Takahashi, Ryota*; Miyamoto, Yu*; Handa, Hiroyuki*; Saito, Eiji*; Fukidome, Hirokazu*; Suemitsu, Maki*; Teraoka, Yuden; Yoshigoe, Akitaka

no journal, , 

As the graphene, 2D-crystal of a carbon atomic layer, has a large mobility of 300000 cm$$^{2}$$/V/s, it is expected as a candidate for the next generation electronic device material. As to the practical use of graphene, a graphene-on-silicon (GOS) technique in which graphene is formed by thermal annealling on an silicon substrate covered by an SiC thin film. Since the anneal temperature is high as 1523-1573 K for the graphene formation in the former techniques including the GOS technique, such a high temperature technique is not introduced indeed in silicon device fabrication processes. We noticed a temperature-pressure phase diagram reported by Yongwei Song et al.. We have succeeded to form a graphene film on the SiC surface at a lower temperature of 1273 K by adding a bit of oxygen gas in the anneal atmosphere.

Oral presentation

LEED and XPS observations of graphene-on-Si process

Takahashi, Ryota*; Miyamoto, Yu*; Handa, Hiroyuki*; Saito, Eiji*; Imaizumi, Kei*; Fukidome, Hirokazu*; Suemitsu, Maki*; Teraoka, Yuden; Yoshigoe, Akitaka

no journal, , 

In this study, a graphene-on-silicon process was observed by LEED and XPS to make clear mechanisms. LEED patterns of SiC(1$$times$$1) and Si(RT3$$times$$RT3)R30$$^{circ}$$ were observed on the 3C-SiC(111) surface formed on the Si(111) surface. After the thermal annealing process at 1523 K for 30 min, a LEED pattern of graphene(1$$times$$1) was also observed. The graphene(1$$times$$1) pattern was tilted to the SiC(1$$times$$1) pattern by 30 deg as expected. The graphene formation process of 3C-SiC(111) on the Si(111) is the same as that of a 6H-SiC(0001) substrate. Comparing a C1s photoemission peak before and after the annealling process, a Cis peak corresponding to an sp$$^{2}$$ hybrid orbital appeared and a peak due to SiC bulk decreased. These facts reveal that a surface state transformation from SiC(1$$times$$1)(bulk state) to graphene(1$$times$$1)(graphene state) takes place even in the graphene-on-silicon process on Si(111) surface as well as the graphene formation process on the 6H-SiC(0001) substrate.

Oral presentation

SR-PES study on the formation of epitaxial graphene on Si substrates

Suemitsu, Maki*; Takahashi, Ryota*; Handa, Hiroyuki*; Saito, Eiji*; Imaizumi, Kei*; Fukidome, Hirokazu*; Teraoka, Yuden; Yoshigoe, Akitaka

no journal, , 

The up-to-date industrial fabrication method of graphene is a epitaxial graphene method, in which graphene layers are formed on the SiC substrate after thermal annealing in the vacuum condition. This method, however, has a large disadvantage, that is, an SiC bulk substrate with a large size diameter is not available with low prices. We have succeeded to make graphene on the Si substrate by thermal annealing of a 3C-SiC ultra-thin layer (80-100 nm) formed epitaxially on the Si substrate in the vacuum conditions (Graphene-On-Silicon;GOS). In this study, in order to make clear mechanisms of the GOS formation processes, low energy electron diffraction (LEED) and X-ray photoemission spectroscopy (XPS) have been applied to observe surface structures. Consequently, graphene formation processes from the 3C-SiC(111) layer on the Si(111) substrate has been found to be same as those on the 6H-SiC(0001) substrate.

48 (Records 1-20 displayed on this page)