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Journal Articles

Cosmogenic $$^{7}$$Be; Particle size distribution and chemical composition of $$^{7}$$Be-carrying aerosols in the atmosphere in Japan

Narazaki, Yukinori*; Sakoda, Akihiro; Takahashi, Shunta*; Momoshima, Noriyuki*

Journal of Environmental Radioactivity, 237, p.106690_1 - 106690_7, 2021/10

 Times Cited Count:3 Percentile:19.88(Environmental Sciences)

The particle size distributions of airborne aerosols with $$^{7}$$Be were measured using cascade impactors at Dazaifu, a city in western Japan, in 2018 to observe their seasonal variation. $$^{7}$$Be was found to be attached to aerosols with a particle size of less than 2.1 $$mu$$m; in general, particles sized 0.43-0.65 $$mu$$m had the highest $$^{7}$$Be activity concentrations. The activity median aerodynamic diameter (AMAD) of $$^{7}$$Be was in the range of 0.39-0.52 $$mu$$m, which is the size range of particles that can reach human alveoli, and had an annual mean of 0.43$$pm$$0.035 $$mu$$m. The activity concentrations of $$^{7}$$Be were significantly lower in summer, which affected its activity concentrations in the particle size distributions of $$^{7}$$Be. The particle size distribution of $$^{7}$$Be-carrying aerosols was also affected by that of the aerosol particles in the atmosphere. Finally, findings suggest that $$^{7}$$Be was mainly attached to sulfate aerosols (particularly ammonium sulfate aerosols).

Journal Articles

Suppression of heavy-ion induced current in SOI device

Ogura, Shunta*; Komiyama, Takahiro*; Takahashi, Yoshihiro*; Makino, Takahiro; Onoda, Shinobu; Hirao, Toshio*; Oshima, Takeshi

Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.127 - 129, 2012/12

We have investigated the transient current in a SOI p$$^+$$n junction diode induced by single heavy-ions. The amount of radiation induced total collected charge exceeds the generated charge in active SOI layer because some of generated charge in handle substrate is collected through a BOX layer by displacement current. The displacement current is caused by the charges collected at surface of handle substrate due to an electric field in depletion layer. In this paper, we show that the amount of collected charge can be suppressed by reducing the width of depletion layer at the surface of handle substrate.

Oral presentation

A Study on reduction of heavy-ion induced current in SOI device

Takeyasu, Hidenori*; Okazaki, Yuji*; Ogura, Shunta*; Otani, Takumi*; Takahashi, Yoshihiro*; Hirao, Toshio; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Study of soft error Hardening for SOI devices

Ogura, Shunta*; Takahashi, Yoshihiro*; Makino, Takahiro; Onoda, Shinobu; Hirao, Toshio*; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Inhibition of heavy ion induced current in SOI devices

Takahashi, Yoshihiro*; Ogura, Shunta*; Komiyama, Takahiro*; Makino, Takahiro; Onoda, Shinobu; Hirao, Toshio*; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Selenium speciation in sedimentary formations from Horonobe, Hokkaido

Dei, Shuntaro; Miyakawa, Kazuya; Sasamoto, Hiroshi; Tachi, Yukio; Amano, Yuki; Francisco, P. C. M.; Sugiura, Yuki; Takahashi, Yoshio*

no journal, , 

no abstracts in English

Oral presentation

Retention mechanisms of selenium in deep sedimentary rocks from Horonobe, Hokkaido

Dei, Shuntaro; Tachi, Yukio; Amano, Yuki; Francisco, P. C. M.; Sugiura, Yuki; Takahashi, Yoshio*

no journal, , 

no abstracts in English

Oral presentation

Retention mechanisms of selenium in deep subsurface sedimentary formations in Horonobe area, Hokkaido, Japan

Dei, Shuntaro; Tachi, Yukio; Amano, Yuki; Sugiura, Yuki; Francisco, P. C. M.; Takahashi, Yoshio*

no journal, , 

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