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Journal Articles

Summary of discussion on AESJ special committee; Study of ensuring safety for near-surface disposal of uranium-bearing waste

Iguchi, Tetsuo*; Hasegawa, Makoto; Takahashi, Kuniaki; Enokido, Yuji*

Dekomisshoningu Giho, (52), p.12 - 19, 2015/09

no abstracts in English

Journal Articles

Thickness-dependent magnetic properties and strain-induced orbital magnetic moment in SrRuO$$_{3}$$ thin films

Ishigami, Keisuke*; Yoshimatsu, Kohei*; Toyota, Daisuke*; Takizawa, Masaru*; Yoshida, Teppei*; Shibata, Goro*; Harano, Takayuki*; Takahashi, Yukio*; Kadono, Toshiharu*; Verma, V. K.*; et al.

Physical Review B, 92(6), p.064402_1 - 064402_5, 2015/08

 Times Cited Count:29 Percentile:80.07(Materials Science, Multidisciplinary)

Journal Articles

Orbital magnetic moment and coercivity of SiO$$_2$$-coated FePt nanoparticles studied by X-ray magnetic circular dichroism

Takahashi, Yukio*; Kadono, Toshiharu*; Yamamoto, Shimpei*; Singh, V. R.*; Verma, V.*; Ishigami, Keisuke*; Shibata, Goro*; Harano, Takayuki*; Takeda, Yukiharu; Okane, Tetsuo; et al.

Physical Review B, 90(2), p.024423_1 - 024423_5, 2014/07

AA2015-0417.pdf:0.45MB

 Times Cited Count:5 Percentile:27.7(Materials Science, Multidisciplinary)

Journal Articles

Recent progress in the energy recovery linac project in Japan

Sakanaka, Shogo*; Akemoto, Mitsuo*; Aoto, Tomohiro*; Arakawa, Dai*; Asaoka, Seiji*; Enomoto, Atsushi*; Fukuda, Shigeki*; Furukawa, Kazuro*; Furuya, Takaaki*; Haga, Kaiichi*; et al.

Proceedings of 1st International Particle Accelerator Conference (IPAC '10) (Internet), p.2338 - 2340, 2010/05

Future synchrotron light source using a 5-GeV energy recovery linac (ERL) is under proposal by our Japanese collaboration team, and we are conducting R&D efforts for that. We are developing high-brightness DC photocathode guns, two types of cryomodules for both injector and main superconducting (SC) linacs, and 1.3 GHz high CW-power RF sources. We are also constructing the Compact ERL (cERL) for demonstrating the recirculation of low-emittance, high-current beams using above-mentioned critical technologies.

Journal Articles

The H-Invitational Database (H-InvDB); A Comprehensive annotation resource for human genes and transcripts

Yamasaki, Chisato*; Murakami, Katsuhiko*; Fujii, Yasuyuki*; Sato, Yoshiharu*; Harada, Erimi*; Takeda, Junichi*; Taniya, Takayuki*; Sakate, Ryuichi*; Kikugawa, Shingo*; Shimada, Makoto*; et al.

Nucleic Acids Research, 36(Database), p.D793 - D799, 2008/01

 Times Cited Count:51 Percentile:74.53(Biochemistry & Molecular Biology)

Here we report the new features and improvements in our latest release of the H-Invitational Database, a comprehensive annotation resource for human genes and transcripts. H-InvDB, originally developed as an integrated database of the human transcriptome based on extensive annotation of large sets of fulllength cDNA (FLcDNA) clones, now provides annotation for 120 558 human mRNAs extracted from the International Nucleotide Sequence Databases (INSD), in addition to 54 978 human FLcDNAs, in the latest release H-InvDB. We mapped those human transcripts onto the human genome sequences (NCBI build 36.1) and determined 34 699 human gene clusters, which could define 34 057 protein-coding and 642 non-protein-coding loci; 858 transcribed loci overlapped with predicted pseudogenes.

Journal Articles

Consideration to reliability of laser testing for evaluating SEU tolerance

Abe, Tetsuo*; Onishi, Kazunori*; Takahashi, Yoshihiro*; Hirao, Toshio

Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.157 - 160, 2004/10

no abstracts in English

Journal Articles

Relationship between the current direction in the inversion layer and the electrical characteristics of metal-oxide-semiconductor field effect transistors on 3C-SiC

Oshima, Takeshi; Lee, K. K.; Ishida, Yuki*; Kojima, Kazutoshi*; Tanaka, Yasunori*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Okumura, Hajime*; Arai, Kazuo*; Kamiya, Tomihiro

Materials Science Forum, 457-460(Part2), p.1405 - 1408, 2004/06

The electrical characteristics of cubic silicon carbide (3C-SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with the current direction in the inversion layer perpendicular to [-110] ([-110]-perpendicular MOSFETs) were compared to those of 3C-SiC MOSFETs with the current direction in the inversion layer parallel to [-110] ([-110]-parallel MOSFETs). The threshold voltage (V$$_{T}$$) for both MOSFETs shows -0.5 V although enhancement type MOSFETs were designed. The values of channel mobility which was estimated from linear region of drain current (I$$_{D}$$) - drain voltage (V$$_{D}$$) curves are 230 cm$$^{2}$$/Vs for [-110]-perpendicular MOSFETs and 215 cm$$^{2}$$/Vs for [-110]-parallel MOSFETs, indicating no significant difference between both MOSFETs. The value of I$$_{D}$$ for [-110]-perpendicular MOSFETs is of order of 10-8 A at V$$_{D}$$ = 10V and gate voltage (V$$_{G}$$) of -2V. However, for [-110]-parallel MOSFETs, I$$_{D}$$ shows of order of -10-6 A at V$$_{D}$$ = 10V and V$$_{G}$$ = -2V.

Journal Articles

The Electrical characteristics of metal-oxide-semiconductor field effect transistors fabricated on cubic silicon carbide

Oshima, Takeshi; Lee, K. K.; Ishida, Yuki*; Kojima, Kazutoshi*; Tanaka, Yasunori*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Okumura, Hajime*; Arai, Kazuo*; Kamiya, Tomihiro

Japanese Journal of Applied Physics, Part 2, 42(6B), p.L625 - L627, 2003/06

 Times Cited Count:37 Percentile:77.51(Physics, Applied)

The n-channel Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) were fabricated on cubic silicon carbide (3C-SiC) epitaxial layers grown on 3C-SiC substrates. The gate oxide of the MOSFETs was formed using pyrogenic oxidation at 1100$$^{circ}$$C. The 3C-SiC MOSFETs showed enhancement type behaviors after annealing at 200$$^{circ}$$C for 30 min in argon atmosphere. The maximum value of the effective channel mobility of the 3C-SiC MOSFETs was 260 cm$$^{2}$$/Vs. The leakage current of gate oxide was of a few tens of nA/cm$$^{2}$$ at an electric field range below 8.5 MV/cm, and breakdown began around 8.5 MV/cm.

Journal Articles

Electrical characteristics of interface defects in oxides grown at 1200 $$^{circ}$$C in dry oxygen ambient on silicon carbide and their thermal annealing effects

Yoshikawa, Masahito; Ishida, Yuki*; Jikimoto, Tamotsu*; Hijikata, Yasuto*; Ito, Hisayoshi; Okumura, Hajime*; Takahashi, Tetsuo*; Tsuchida, Hidekazu*; Yoshida, Sadafumi*

Denshi Joho Tsushin Gakkai Rombunshi, C, 86(4), p.426 - 433, 2003/04

no abstracts in English

Journal Articles

Photoionization of Ne$$^{3+}$$ ions in the region of the 1${it s}$ $$rightarrow$$ 2${it p}$ autoionizing resonance

Oura, Masaki*; Yamaoka, Hitoshi*; Kawatsura, Kiyoshi*; Kimata, Junichi*; Hayaishi, T.*; Takahashi, Takehisa*; Koizumi, Tetsuo*; Sekioka, T.*; Terasawa, Michitaka*; Ito, Yo*; et al.

Physical Review A, 63(1), p.014704_1 - 014704_4, 2001/01

 Times Cited Count:15 Percentile:61.17(Optics)

no abstracts in English

Journal Articles

Study of residual defects in ion-implanted and subsequently annealed 3C-SiC

Oshima, Takeshi; Ito, Hisayoshi; Uedono, Akira*; Suzuki, Ryoichi*; Ishida, Yuki*; Takahashi, Tetsuo*; Yoshikawa, Masahito; Kojima, Kazutoshi; Odaira, Toshiyuki*; Nashiyama, Isamu; et al.

Denshi Gijutsu Sogo Kenkyujo Iho, 62(10-11), p.469 - 476, 1999/00

no abstracts in English

JAEA Reports

The Design study of the JT-60SU device, No.3; The superconductor-coils of JT-60SU

Ushigusa, Kenkichi; Mori, Katsuharu*; *; Nagashima, Keisuke; ; ; Aoyagi, Tetsuo; Takahashi, Yoshikazu; Matsui, Kunihiro; Kikuchi, Mitsuru; et al.

JAERI-Research 97-027, 281 Pages, 1997/03

JAERI-Research-97-027.pdf:9.25MB

no abstracts in English

JAEA Reports

The Design study of the JT-60SU device, No.1; Objectives and outline of JT-60SU program

Kikuchi, Mitsuru; ; ; Miya, Naoyuki; Ushigusa, Kenkichi; Nagashima, Keisuke; Aoyagi, Tetsuo; ; Neyatani, Yuzuru; Naito, Osamu; et al.

JAERI-Research 97-026, 70 Pages, 1997/03

JAERI-Research-97-026.pdf:3.23MB

no abstracts in English

Journal Articles

Effects of gamma-ray irradiation and thermal annealing on electrical characteristics of SiC MOSFETs

Oshima, Takeshi; Yoshikawa, Masahito; Ito, Hisayoshi; Takahashi, Tetsuo*; Okumura, Hajime*; Yoshida, Sadafumi*; Nashiyama, Isamu

Silicon Carbide and Related Materials 1995 (Institute of Physics Conf. Series,No. 142), 0, p.801 - 804, 1996/00

no abstracts in English

Journal Articles

Development of superconducting tunnel junction type X-ray detector

Ukibe, M.*; Nakazawa, Masaharu*; Iguchi, Tetsuo*; Takahashi, Hiroyuki*; Kishimoto, Maki; Katagiri, Masaki; Kurakado, M.*

Hoshasen, 21(4), p.67 - 72, 1995/00

no abstracts in English

Journal Articles

Simulation of fast breeder reactor noise based on two-channel core model

Tamaoki, Tetsuo*; Takahashi, Ryoichi*

Nuclear Engineering and Design, 136(3), p.389 - 399, 1992/08

 Times Cited Count:2 Percentile:28.1(Nuclear Science & Technology)

None

Journal Articles

Delayed Neutron Noise Characteristics of an In-Pile Fission Product Loop

Tamaoki, Tetsuo*; Sakai, Takuhiko*; Endo, Hiroshi*; Haga, Kazuo; Takahashi, Ryoichi*

Nuclear Technology, 99(1), p.58 - 69, 1992/07

 Times Cited Count:0 Percentile:0.01(Nuclear Science & Technology)

None

Oral presentation

Hydrogen production with high-temperature gas-cooled reactors, 11; Conceptual design study of the HTTR-IS system

Sakaba, Nariaki; Homma, Hiroyuki; Takahashi, Toshio*; Kasahara, Seiji; Ohashi, Hirofumi; Nishihara, Tetsuo; Onuki, Kaoru; Kunitomi, Kazuhiko

no journal, , 

no abstracts in English

Oral presentation

Measurement of absolute detection efficiency using a high sensitivity micro-channel plate

Matoba, Shiro; Moriya, Sosuke*; Takahashi, Karin*; Ishikawa, Manabu*; Koizumi, Tetsuo*; Shiromaru, Haruo*

no journal, , 

no abstracts in English

Oral presentation

Absolute detection efficiency of a high sensitivity microchannel plate

Matoba, Shiro; Moriya, Sosuke*; Koizumi, Tetsuo*; Ishikawa, Manabu*; Takahashi, Karin*; Shiromaru, Haruo*

no journal, , 

32 (Records 1-20 displayed on this page)