Relationship between soft error rate in SOI-SRAM and amount of generated charge by high energy ion probes

Hazama, Masatoshi*; Abo, Satoshi*; Masuda, Naoyuki*; Wakaya, Fujio*; Onoda, Shinobu; Makino, Takahiro; Hirao, Toshio*; Oshima, Takeshi; Iwamatsu, Toshiaki*; Oda, Hidekazu*; et al.

Proceedings of 10th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-10) (Internet), p.115 - 118, 2012/12

Evaluation of soft errors using nuclear probes in SOI SRAM with body-tie structure fabricated by partial trench isolation

Abo, Satoshi*; Masuda, Naoyuki*; Wakaya, Fujio*; Onoda, Shinobu; Makino, Takahiro; Hirao, Toshio; Oshima, Takeshi; Iwamatsu, Toshiaki*; Oda, Hidekazu*; Takai, Mikio*

Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), p.72 - 75, 2010/10

no abstracts in English

Irradiation energy dependence of ion probes on soft error rate in SOI-SRAM

Abo, Satoshi*; Mokuno, Yoshiaki*; Kinomura, Atsushi*; Onoda, Shinobu; Hirao, Toshio; Oshima, Takeshi; Iwamatsu, Toshiaki*; Takai, Mikio*

Proceedings of the 8th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-8), p.183 - 186, 2008/12

no abstracts in English

Observation of the SEU in the SOI devices induced by microbeam irradiation

Hirao, Toshio; Abo, Satoshi*; Onoda, Shinobu; Masuda, Naoyuki*; Makino, Takahiro; Oshima, Takeshi; Takai, Mikio*

no journal, , 

no abstracts in English

Evaluation of single event effects in SOI device using heavy ion microbeam

Hirao, Toshio; Onoda, Shinobu; Makino, Takahiro; Takahashi, Yoshihiro*; Takeyasu, Hidenori*; Okazaki, Yuji*; Abo, Satoshi*; Masuda, Naoyuki*; Takai, Mikio*; Oshima, Takeshi

no journal, , 

no abstracts in English