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Okada, Hiroshi*; Takemoto, Kazumasa*; Oikawa, Fumitake*; Furukawa, Yuzo*; Wakahara, Akihiro*; Sato, Shinichiro; Oshima, Takeshi
Physica Status Solidi (C), 6(Suppl.2), p.S631 - S634, 2009/05
Light emitting field effect transistor (FET) based-on AlGaN/GaN high electron mobility transistor (HEMT) structure with spatially selective doping of rare-earth ions (REIs) as a luminescence center in the channel is proposed and investigated. Fabricated device showed excellent I-V characteristics as a transistor with gate control. By applying a drain bias of 20 V, red emission suggesting a luminescence from Eu ion was clearly observed. Applying a negative bias to the Schottky gate decreased the luminescence intensity.
Wakahara, Akihiro*; Okada, Hiroshi*; Oikawa, Fumitake*; Takemoto, Kazumasa*; Oshima, Takeshi; Ito, Hisayoshi
JAEA-Review 2006-042, JAEA Takasaki Annual Report 2005, P. 17, 2007/02
no abstracts in English
Oikawa, Fumitake*; Wakahara, Akihiro*; Takemoto, Kazumasa*; Okada, Hiroshi*; Oshima, Takeshi; Ito, Hisayoshi
no journal, ,
no abstracts in English
Okada, Hiroshi*; Takemoto, Kazumasa*; Shimojo, Takashi*; Hata, Takayuki*; Furukawa, Yuzo*; Wakahara, Akihiro*; Sato, Shinichiro; Oshima, Takeshi
no journal, ,
no abstracts in English
