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Takeyama, Akinori; Idesaki, Akira; Sugimoto, Masaki; Yoshikawa, Masahito
Journal of Asian Ceramic Societies (Internet), 3(4), p.402 - 406, 2015/12
Hijikata, Yasuto*; Mitomo, Satoshi*; Matsuda, Takuma*; Murata, Koichi*; Yokoseki, Takashi*; Makino, Takahiro; Takeyama, Akinori; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; et al.
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.130 - 133, 2015/11
Takeyama, Akinori; Matsuda, Takuma; Yokoseki, Takashi; Mitomo, Satoshi; Murata, Koichi; Makino, Takahiro; Onoda, Shinobu; Tanaka, Yuki*; Kandori, Mikio*; Yoshie, Toru*; et al.
Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.134 - 137, 2015/11
Narisawa, Masaki*; Koka, Masashi; Takeyama, Akinori; Sugimoto, Masaki; Idesaki, Akira; Sato, Takahiro; Hokazono, Hiroki*; Kawai, Taketoshi*; Iwase, Akihiro*
Journal of the Ceramic Society of Japan, 123(9), p.805 - 808, 2015/09
Kajino, Mizuo*; Inomata, Yayoi*; Sato, Keiichi*; Ueda, Hiromasa*; Han, Z.*; An, J.*; Katata, Genki; Deushi, Makoto*; Maki, Takashi*; Oshima, Naga*; et al.
Atmospheric Chemistry and Physics, 12(24), p.11833 - 11856, 2012/12
Times Cited Count:47 Percentile:72.37(Environmental Sciences)A new aerosol chemical transport model, Regional Air Quality Model 2 (RAQM2), was developed to simulate Asian air quality. We implemented a simple version of a modal-moment aerosol dynamics model and achieved completely dynamic solution of a gas-to-particle mass transfer over a wide range of aerosol diameters from 1 nm to super micro m. To consider a variety of atmospheric aerosol properties, a category approach is utilized: aerosols are distributed into 4 categories, Aitken, accumulation, soot aggregates, and coarse mode. A regional-scale simulation was performed for the entire year of 2006, covering Northeast Asian region. Statistical analysis showed the model reproduced the regional-scale transport and transformation of the major inorganic anthropogenic and natural air constituents within factors of 2 to 5. Modeled size distributions of total weight and chemical components were consistent with the observations, indicating simulations of aerosol mixing types were successful.
Takeyama, Akinori; Sugimoto, Masaki; Yoshikawa, Masahito
Materials Transactions, 52(6), p.1276 - 1280, 2011/06
Times Cited Count:17 Percentile:60.73(Materials Science, Multidisciplinary)SiC membranes were prepared using curing of precursor polymer (polycarbosilane, PCS) film by electron beam irradiation in helium atmosphere. The membrane prepared via curing of PCS film coated using 10 mass % PCS solution for dip-coating followed by immersing it for 30 s in PCS solution, showed H
permeance of 3.1
10
mol/m
/s/Pa and the selectivity of 51 at 523 K. The H
permeance of the membrane was increased proportional to the temperature by the activated diffusion of H
. It indicates SiC film without pinholes or cracks formed on the support. As the pyrolysis temperature of cured PCS film was increased, the selectivity of the membrane reached the maximum at 923 K.
fiber under visible light illumination (Joint research)Takeyama, Akinori; Yamamoto, Shunya; Yoshikawa, Masahito; Hasegawa, Yoshio*; Awatsu, Satoshi*
JAEA-Research 2007-012, 29 Pages, 2007/03
The Sol-Gel derived precursor fiber was annealed under hydrogen disulfeid (H
S) following oxygen atmosphere, Sulfer-doped titanium dioxide (TiO
) fiber was obtained. Crystal structure of the fiber was identified as anatase phase of TiO
. The energy band gap of the fiber was narrower by about 0.06 eV than that of anatase, which showed that it could absorb visible light. The fiber contains about 0.58 atomic % of Sulfer, and they located at the oxygen lattice site of TiO
. Under visible light illumination, the fiber degraded Trichroloethylen (TCE) and produced carbon dioxide (CO
). This shows Sulfer-doped TiO
fiber has the photocatalytic activity under visible light illumination.
(100) films by helium irradiationYamamoto, Shunya; Nagata, Shinji*; Takeyama, Akinori; Yoshikawa, Masahito
Nuclear Instruments and Methods in Physics Research B, 249(1-2), p.374 - 376, 2006/08
Times Cited Count:8 Percentile:49.33(Instruments & Instrumentation)no abstracts in English
films by RBS/CYamamoto, Shunya; Takeyama, Akinori; Yoshikawa, Masahito
Nuclear Instruments and Methods in Physics Research B, 242(1-2), p.377 - 379, 2006/01
Times Cited Count:9 Percentile:52.31(Instruments & Instrumentation)no abstracts in English
(100) thin films by helium ion implantationYamamoto, Shunya; Nagata, Shinji*; Takeyama, Akinori; Yoshikawa, Masahito
Transactions of the Materials Research Society of Japan, 30(3), p.789 - 792, 2005/09
no abstracts in English
Takeyama, Akinori; Yamamoto, Shunya; Ito, Hiroshi; Yoshikawa, Masahito
Nuclear Instruments and Methods in Physics Research B, 232(1-4), p.333 - 337, 2005/05
Times Cited Count:0 Percentile:0.00(Instruments & Instrumentation)Cu precipitates were formed on Si(100) by 200 keV Cu ion implantation and subsequent annealing at 773 K. The shape of the Cu precipitates evolved from a large rectangle to a small elongated pyramid with increasing annealing time. This shape evolution seemed to result from the epitaxial formation of Cu precipitates to minimize the interfacial energy between the precipitate and the Cu implanted substrate. The average density of Cu precipitates monotonously increased and the average diameter of Cu precipitates decreased with increasing annealing time up to 1 h. These indicate that the morphology, size and average density of Cu precipitates can be controlled by varying annealing time, and that Cu ion implantation and subsequent annealing were effective in producing a substrate dispersed with catalytic particles for oxide nanorods growth.
Takeyama, Akinori; Yamamoto, Shunya; Yoshikawa, Masahito; Ito, Hiroshi
Japanese Journal of Applied Physics, Part 1, 44(1B), p.750 - 753, 2005/01
Times Cited Count:0 Percentile:0.00(Physics, Applied)Pyramid shaped Cu precipitates were formed on Si (100) surface as a result of 200 keV Cu ion implantation and subsequent annealing. Then, ZnO nanorods were successfully synthesized on the Cu implanted substrates by chemical vapor transport (CVT). Hexagonal shaped nanorods with a diameter of 200 nm were grown nearly perpendicular to the Cu implanted substrate and their average density was increased as increasing that of Cu precipitates. The facts strongly indicate the Cu precipitates served as the catalytic particles for the growth of ZnO rods.
Takeyama, Akinori; Sugimoto, Masaki; Yoshikawa, Masahito
no journal, ,
Inorganic membrane prepared from thermally stable precursor-derived silicon carbide (SiC) has been paid attention for the use of hydrogen or carbon dioxide separation. For preventing formation of defects called as pinholes or cracks in the membrane, volume shrinkage of polymer precursor, polycarbosilane (PCS) should be as small as possible when PCS is converted into SiC. We aim at revealing mechanism for prevention of the volume shrinkage of PCS powder during pyrolysis. With increasing the pyrolysis temperature from 673 K to 823 K, density of pyrolyzed PCS powder was decreased, whilst calculated volume change was increased, indicating PCS powder swelled. Furthermore, increased amount of total pore volume compared with that of un-pyrolyzed powder was observed in the same temperature range. We found volume shrinkage of PCS powder was relieved by swelling.
-rays at elevated temperatureMatsuda, Takuma; Yokoseki, Takashi; Mitomo, Satoshi; Murata, Koichi; Makino, Takahiro; Takeyama, Akinori; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; Kandori, Mikio*; et al.
no journal, ,
Silicon carbide (SiC) is expected to be applied to Metal-Oxide-Semiconductor (MOS) FETs used in harsh radiation environments to decommission TEPCO Fukushima Daiichi nuclear reactors. To develop radiation resistant SiC MOS FETs, clarification of their radiation response under elevated temperature is required. We measured capacitance-voltage (C-V) characteristics of SiC MOSFETs irradiated with
-rays at 423 K in nitrogen atmosphere. The samples were vertical power 4H-SiC MOSFETs with the blocking voltage of 1200 V and the rated current of 20 A with the gate oxide thickness of 45 nm. Typical C-V curve of a SiC MOSFET irradiated even up to 5 kGy was shifted to negative voltage side, suggesting that the positive charges generated in gate oxide by irradiation. While, no significant change in the slope of the curve was observed, indicating that interface traps between the gate oxide and SiC were merely generated. The radiation response of SiC MOS FETs under elevated temperature predominantly depends on the amount of positive charges generated in the gate oxide.
Oshima, Takeshi; Lohrmann, A.*; Johnson, B. C.*; Castelletto, S.*; Onoda, Shinobu; Makino, Takahiro; Takeyama, Akinori; Klein, J. R.*; Bosi, M.*; Negri, M.*; et al.
no journal, ,
no abstracts in English
-ray irradiation under high temperature and humidity circumstance on the electrical characteristics of SiC MOSFETsTakeyama, Akinori; Matsuda, Takuma; Yokoseki, Takashi; Mitomo, Satoshi; Murata, Koichi; Makino, Takahiro; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; Kandori, Mikio*; et al.
no journal, ,
no abstracts in English
Takeyama, Akinori; Idesaki, Akira; Sugimoto, Masaki; Yoshikawa, Masahito
no journal, ,
In order to prepare crack-free silicon carbide hydrogen separation membrane, how volume shrinkage or expansion of polymer precursor, polycarbosilne (PCS) take places when it is converted into silicon carbide ceramics during pysolysis was investigated. PCS powder cured by electron beam irradiation with several dose of 12,16,18,24 MGy in helium atmosphere was pysolysed at 923 K to convert them into SiC ceramic powder. As the dose was increased, ceramic yield was gradually increased, indicating amount of decomposed gas evolved during pyrolysis was decreased. Density of obtained SiC ceramic powders was decreased with increasing dose. By electron beam irradiation, network structure of PCS was developed and decomposition gas seemed to be easily accumulated in the network structure. It follows that PCS powder swelled as decomposition gas was accumulated and swelling was lowered density of SiC ceramic powders. Furthermore, surface area of SiC ceramic powder was increased from 0 m
/g for 12 MGy to 0.6 m
/g for 24 MGy by swelling. Consequently, swelling suppressed volume shrinkage of PCS powder during pyrolysis.
Takeyama, Akinori; Sugimoto, Masaki; Yoshikawa, Masahito
no journal, ,
no abstracts in English
Takeyama, Akinori; Sugimoto, Masaki; Yoshikawa, Masahito
no journal, ,
Silicon carbide (SiC) films as a hydrogen separation membrane were prepared using a novel preparation technique. The films were obtained by a coating of precursor films on porous alumina supports followed by an immersion into cycohexane, curing in an inert atmosphere and pyrolisis. A selectivity of the film, which is defined as the ratio of the amount of hydrogen (H
) to nitrogen (N
) which passed thorough the membrane, was increased up to 6.1 as increasing the immersion time. This is supposed that precursor in pores is dissolved by cyclohexane and pores are filled with the precursor solution, which leads to a decrease of the pore diameter and an improvement of the selectivity.
-ray irradiationTakeyama, Akinori; Matsuda, Takuma*; Yokoseki, Takashi*; Mitomo, Satoshi*; Murata, Koichi*; Makino, Takahiro; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; Kandori, Mikio*; et al.
no journal, ,
Effect of
-ray irradiation under high temperature and humidity circumstances on the electrical characteristics of Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) was investigated. In the case of irradiation under high humidity circumstance, trapped oxide and interface charges densities generated due to irradiation were smaller than those for irradiation in dry circumstance. It is concluded that humidity circumstance suppressed the degradation of the electrical properties due to irradiation including threshold voltage shift and leakage current.