Swelling of radiation-cured polymer precursor powder for silicon carbide by pyrolysis

Takeyama, Akinori; Idesaki, Akira; Sugimoto, Masaki; Yoshikawa, Masahito

Journal of Asian Ceramic Societies (Internet), 3(4), p.402 - 406, 2015/12

https://doi.org/10.1016/j.jascer.2015.08.003

Effect of humidity and temperature on the radiation response of SiC MOSFETs

Takeyama, Akinori; Matsuda, Takuma; Yokoseki, Takashi; Mitomo, Satoshi; Murata, Koichi; Makino, Takahiro; Onoda, Shinobu; Tanaka, Yuki*; Kandori, Mikio*; Yoshie, Toru*; et al.

Proceedings of 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-11) (Internet), p.134 - 137, 2015/11

Development of the RAQM2 aerosol chemical transport model and predictions of the Northeast Asian aerosol mass, size, chemistry, and mixing type

Kajino, Mizuo*; Inomata, Yayoi*; Sato, Keiichi*; Ueda, Hiromasa*; Han, Z.*; An, J.*; Katata, Genki; Deushi, Makoto*; Maki, Takashi*; Oshima, Naga*; et al.

Atmospheric Chemistry and Physics, 12(24), p.11833 - 11856, 2012/12

https://doi.org/10.5194/acp-12-11833-2012

A new aerosol chemical transport model, Regional Air Quality Model 2 (RAQM2), was developed to simulate Asian air quality. We implemented a simple version of a modal-moment aerosol dynamics model and achieved completely dynamic solution of a gas-to-particle mass transfer over a wide range of aerosol diameters from 1 nm to super micro m. To consider a variety of atmospheric aerosol properties, a category approach is utilized: aerosols are distributed into 4 categories, Aitken, accumulation, soot aggregates, and coarse mode. A regional-scale simulation was performed for the entire year of 2006, covering Northeast Asian region. Statistical analysis showed the model reproduced the regional-scale transport and transformation of the major inorganic anthropogenic and natural air constituents within factors of 2 to 5. Modeled size distributions of total weight and chemical components were consistent with the observations, indicating simulations of aerosol mixing types were successful.

Photocatalytic activity of Sulfur-doped TiO fiber under visible light illumination (Joint research)

Takeyama, Akinori; Yamamoto, Shunya; Yoshikawa, Masahito; Hasegawa, Yoshio*; Awatsu, Satoshi*

JAEA-Research 2007-012, 29 Pages, 2007/03

JAEA-Research-2007-012.pdf:3.77MB

The Sol-Gel derived precursor fiber was annealed under hydrogen disulfeid (HS) following oxygen atmosphere, Sulfer-doped titanium dioxide (TiO) fiber was obtained. Crystal structure of the fiber was identified as anatase phase of TiO. The energy band gap of the fiber was narrower by about 0.06 eV than that of anatase, which showed that it could absorb visible light. The fiber contains about 0.58 atomic % of Sulfer, and they located at the oxygen lattice site of TiO. Under visible light illumination, the fiber degraded Trichroloethylen (TCE) and produced carbon dioxide (CO). This shows Sulfer-doped TiO fiber has the photocatalytic activity under visible light illumination.

Characterization of sulfur-doped TiO films by RBS/C

Yamamoto, Shunya; Takeyama, Akinori; Yoshikawa, Masahito

Nuclear Instruments and Methods in Physics Research B, 242(1-2), p.377 - 379, 2006/01

https://doi.org/10.1016/j.nimb.2005.08.077

no abstracts in English

Formation of Cu precipitates by ion implantation and thermal annealing for the growth of oxide nanorods

Takeyama, Akinori; Yamamoto, Shunya; Ito, Hiroshi; Yoshikawa, Masahito

Nuclear Instruments and Methods in Physics Research B, 232(1-4), p.333 - 337, 2005/05

https://doi.org/10.1016/j.nimb.2005.03.068

Cu precipitates were formed on Si(100) by 200 keV Cu ion implantation and subsequent annealing at 773 K. The shape of the Cu precipitates evolved from a large rectangle to a small elongated pyramid with increasing annealing time. This shape evolution seemed to result from the epitaxial formation of Cu precipitates to minimize the interfacial energy between the precipitate and the Cu implanted substrate. The average density of Cu precipitates monotonously increased and the average diameter of Cu precipitates decreased with increasing annealing time up to 1 h. These indicate that the morphology, size and average density of Cu precipitates can be controlled by varying annealing time, and that Cu ion implantation and subsequent annealing were effective in producing a substrate dispersed with catalytic particles for oxide nanorods growth.

Gas permeation property of silicon carbide membrane prepared using radiation curing of polymer precursor film

Takeyama, Akinori; Sugimoto, Masaki; Yoshikawa, Masahito

no journal, , 

There is growing interest in H production using inorganic membrane stable in reactant gases such as carbon monoxide (CO) or steam. In this study, we prepared an inorganic membrane from polymer-derived silicon carbide (SiC) using electron beam curing of polymer precursor film. Alpha almina tube, which is chemically stable but has sized pore (averaged diameter size 100 nm), was used as the support. First, supports were dipped in the 10 mass% polycarbosilne (PCS), polymer precursor solution for 1 s and drawn up (the first dipping). After drying, some of those supports coated with PCS film were immersed into another PCS solution whose concentration was 3 mass% for 0.8, 1.5 and 2 s (the second dipping). They were cured by electron beam irradiation in helium atmosphere and pylolyzed at 973 K in argon atmosphere. H permeance of SiC membrane prepared via only the first dipping increased with increasing the temperature, but not following the Arrhenius plot. This means sub-nano meter sized pores and a few of large defects coexisted in the membrane. Whereas, H permeance of the membrane prepared via the first and 1.5s of second dipping increased following the Arrhenius plot. Activation energy of 7.5 kJ/mol calculated from slope of the plot indicates that pores of the support were plugged by SiC film and thermally activated H molecules diffused through the membrane by molecular sieving mechanism.

Influence of -ray irradiation under high temperature and humidity circumstance on the electrical characteristics of SiC MOSFETs

Takeyama, Akinori; Matsuda, Takuma; Yokoseki, Takashi; Mitomo, Satoshi; Murata, Koichi; Makino, Takahiro; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; Kandori, Mikio*; et al.

no journal, , 

no abstracts in English

Stability of silicon carbide membrane prepared from polymer precursor in steam

Takeyama, Akinori; Sugimoto, Masaki; Yoshikawa, Masahito

no journal, , 

Precursor-derived silicon carbide (SiC) membrane has been a promising candidate as a membrane for hydrogen separation in harsh condition. In this report, SiC membrane was exposed to steam and its gas permeances were measured. Polymer precursor, polycarbosilane (PCS) film was coated on a porous support.Subsequently, it was cured and cross-linked by an electron beam irradiation in helium atmosphere followed by the pyrolysis at 973 K or 1073 K. A series of preparation procedure was repeated three times to layer SiC film. Prepared membrane was exposed to steam at 773 K for 10 hours. Water vapor pressure was about 47 kPa. H permeance of as-prepared membrane prepared via pyrolysis at 1073 K followed Arrhenius plot against the reciprocal temperature. This meanes H permeated through the membrane by molecular sieving mechanism. H permeance still followed Arrhenius plot after the exposure to steam. H permeance of as-prepared membrane prepared via pyrolysis at 973 K also followed Arrhenius plot. However, the membrane was subject to oxidation by steam, consequently large sized pores for Knudsen diffufion of H were formed in the membrane after the exposure.

Single photon source in silicon carbide annealed at high temperature

Oshima, Takeshi; Lohrmann, A.*; Johnson, B. C.*; Castelletto, S.*; Onoda, Shinobu; Makino, Takahiro; Takeyama, Akinori; Klein, J. R.*; Bosi, M.*; Negri, M.*; et al.

no journal, , 

no abstracts in English