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Journal Articles

Sequestration and oxidation of Cr(III) by fungal Mn oxides with Mn(II) oxidizing activity

Suzuki, Ryohei*; Tani, Yukinori*; Naito, Hirotaka*; Miyata, Naoyuki*; Tanaka, Kazuya

Catalysts, 10(1), p.44_1 - 44_15, 2020/01

 Times Cited Count:3 Percentile:42.88(Chemistry, Physical)

We prepared biogenic Mn oxides (BMOs) using ${it Acremonium strictum}$ strain KR21-2, and subsequently conducted single or repeated treatment experiments in Cr(NO$$_{3}$$)$$_{3}$$ at pH6.0. Under aerobic conditions, newly formed BMOs exhibited a rapid production of Cr(VI) without a significant release of Mn(II), demonstrating that newly formed BMO mediates a catalytic oxidation of Cr(III) with a self-regeneration step of reduced Mn. In anaerobic solution, newly formed BMOs showed a cessation of Cr(III) oxidation in the early stage of the reaction, and subsequently had a much smaller Cr(VI) production with significant release of reduced Mn(II).

Journal Articles

High-$$k$$/Ge gate stack with an extremely thin-EOT by controlling interface reaction using ultrathin AlO$$_{x}$$ interlayer

Tanaka, Ryohei*; Hideshima, Iori*; Minoura, Yuya*; Yoshigoe, Akitaka; Teraoka, Yuden; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

Dai-19-Kai Getosutakku KenkyuKai Yokoshu, p.5 - 8, 2014/01

Journal Articles

Ge diffusion and bonding state change in metal/high-$$k$$/Ge gate stacks and its impact on electrical properties

Hosoi, Takuji*; Hideshima, Iori*; Tanaka, Ryohei*; Minoura, Yuya*; Yoshigoe, Akitaka; Teraoka, Yuden; Shimura, Takayoshi*; Watanabe, Heiji*

Microelectronic Engineering, 109, p.137 - 141, 2013/09

 Times Cited Count:11 Percentile:56.62(Engineering, Electrical & Electronic)

Journal Articles

Germanide formation in metal/high-$$k$$/Ge gate stacks and its impact on electrical properties

Hosoi, Takuji*; Hideshima, Iori*; Minoura, Yuya*; Tanaka, Ryohei*; Yoshigoe, Akitaka; Teraoka, Yuden; Shimura, Takayoshi*; Watanabe, Heiji*

Shingaku Giho, 113(87), p.19 - 23, 2013/06

An understanding of the mechanisms responsible for formation or decomposition of GeO$$_{x}$$ interlayer and Ge diffusion into high-$$k$$ layer is important to develop advanced metal/high-$$k$$ gate stacks for Ge MOSFETs. In this work, we fabricated HfO$$_{2}$$/GeO$$_{x}$$/Ge gate stacks by ${it in situ}$ oxidation of thin metal Hf layers on Ge substrates. The effect of plasma oxidation on the change in the bonding states of Ge atoms in HfO$$_{2}$$/GeO$$_{x}$$/Ge gate stacks and the structural changes induced by metal electrode deposition and thermal annealing was systematically investigated by synchrotron radiation photoemission spectroscopy (SR-PES) and electrical characterization.

Journal Articles

Comparison of the mutation inducing effect between ion beams and $$gamma$$-rays; Guineagrass and sorghum

Nakagawa, Hitoshi*; Inafuku, Masashi*; Kusaba, Makoto*; Yamaguchi, Hiroyasu*; Morishita, Toshikazu*; Morita, Ryohei*; Nishimura, Minoru*; Hoeman, S.*; Yokota, Yuichiro; Hase, Yoshihiro; et al.

JAEA-Review 2007-060, JAEA Takasaki Annual Report 2006, P. 72, 2008/03

no abstracts in English

Journal Articles

Screening of higher astaxanthin producing mutants of a green unicellular alga ${it Haematococcus pluvialis}$ by ion beam irradiation

Kakizono, Toshihide*; Sugiura, Toshihiro*; Yoshihara, Ryohei; Hase, Yoshihiro; Narumi, Issei; Tanaka, Atsushi

JAEA-Review 2007-060, JAEA Takasaki Annual Report 2006, P. 91, 2008/03

no abstracts in English

Journal Articles

Comparison of the mutation inducing effect between ion beams and $$gamma$$ ray

Morita, Ryohei*; Morishita, Toshikazu*; Nakagawa, Hitoshi*; Nishimura, Minoru*; Yamaguchi, Hiroyasu*; Yokota, Yuichiro; Hase, Yoshihiro; Tanaka, Atsushi

JAEA-Review 2006-042, JAEA Takasaki Annual Report 2005, P. 78, 2007/02

no abstracts in English

Journal Articles

Measurement of the spin and magnetic moment of $$^{23}$$Al

Ozawa, Akira*; Matsuta, Kensaku*; Nagatomo, Takashi*; Mihara, Mototsugu*; Yamada, Kazunari*; Yamaguchi, Takayuki*; Otsubo, Takashi*; Momota, Sadao*; Izumikawa, Takuji*; Sumikama, Toshiyuki*; et al.

Physical Review C, 74(2), p.021301_1 - 021301_4, 2006/08

 Times Cited Count:40 Percentile:88.98(Physics, Nuclear)

no abstracts in English

Journal Articles

Polarization-dependent dissociation selectively induced by core-electron excitation in methyl ester terminated self-assembled monolayer

Kizaki, Hiroyuki*; Wada, Shinichi*; Sako, Erika*; Sumii, Ryohei*; Waki, Satoshi*; Isari, Koji*; Sekitani, Tetsuji*; Sekiguchi, Tetsuhiro; Tanaka, Kenichiro*

Journal of Electron Spectroscopy and Related Phenomena, 144-147, p.447 - 451, 2005/06

 Times Cited Count:5 Percentile:28.59(Spectroscopy)

no abstracts in English

Journal Articles

D-T neutron skyshine experiments and the MCNP analysis

Nishitani, Takeo; Ochiai, Kentaro; Yoshida, Shigeo*; Tanaka, Ryohei*; Wakisaka, Masashi*; Nakao, Makoto*; Sato, Satoshi; Yamauchi, Michinori*; Hori, Junichi; Wada, Masayuki*; et al.

Journal of Nuclear Science and Technology, 41(Suppl.4), p.58 - 61, 2004/03

no abstracts in English

Journal Articles

Measurement of radiation skyshine with D-T neutron source

Yoshida, Shigeo*; Nishitani, Takeo; Ochiai, Kentaro; Kaneko, Junichi*; Hori, Junichi; Sato, Satoshi; Yamauchi, Michinori*; Tanaka, Ryohei*; Nakao, Makoto*; Wada, Masayuki*; et al.

Fusion Engineering and Design, 69(1-4), p.637 - 641, 2003/09

 Times Cited Count:7 Percentile:47.54(Nuclear Science & Technology)

no abstracts in English

JAEA Reports

Secondary $$gamma$$-ray measurements on the D-T neutron skyshine experiments

Tanaka, Ryohei*; Ochiai, Kentaro; Nakao, Makoto*; Yamauchi, Michinori*; Hori, Junichi; Wada, Masayuki*; Sato, Satoshi; Nishitani, Takeo

JAERI-Tech 2003-063, 62 Pages, 2003/07

JAERI-Tech-2003-063.pdf:3.41MB

no abstracts in English

Journal Articles

D-T neutron skyshine experiments at JAERI/FNS

Nishitani, Takeo; Ochiai, Kentaro; Yoshida, Shigeo*; Tanaka, Ryohei*; Wakisaka, Masashi*; Nakao, Makoto*; Sato, Satoshi; Yamauchi, Michinori*; Hori, Junichi; Takahashi, Akito*; et al.

Purazuma, Kaku Yugo Gakkai-Shi, 79(3), p.282 - 289, 2003/03

no abstracts in English

Journal Articles

Active control of chemical bond scission by site-specific core excitation

Wada, Shinichi*; Sumii, Ryohei*; Isari, Koji*; Waki, Satoshi*; Sako, Erika*; Sekiguchi, Tetsuhiro; Sekitani, Tetsuji*; Tanaka, Kenichiro*

Surface Science, 528(1-3), p.242 - 248, 2003/03

 Times Cited Count:44 Percentile:85.05(Chemistry, Physical)

no abstracts in English

Journal Articles

Active control of site specificity in ion desorption by core excitation

Wada, Shinichi*; Sako, Erika*; Sumii, Ryohei*; Waki, Satoshi*; Isari, Koji*; Sekiguchi, Tetsuhiro; Sekitani, Tetsuji*; Tanaka, Kenichiro*

Nuclear Instruments and Methods in Physics Research B, 199, p.361 - 365, 2003/01

 Times Cited Count:11 Percentile:61.24(Instruments & Instrumentation)

no abstracts in English

Oral presentation

Comparison of the mutation inducing effect between ion beams and $$gamma$$ rays

Morita, Ryohei*; Morishita, Toshikazu*; Nakagawa, Hitoshi*; Nishimura, Minoru*; Yamaguchi, Hiroyasu*; Yokota, Yuichiro; Hase, Yoshihiro; Tanaka, Atsushi

no journal, , 

no abstracts in English

Oral presentation

Comparison of the mutagenesis effect between ion beams and $$gamma$$ ray; Guinea grass and sorghum

Nakagawa, Hitoshi*; Inafuku, Masashi*; Kusaba, Noboru*; Yamaguchi, Hiroyasu*; Morishita, Toshikazu*; Morita, Ryohei*; Nishimura, Minoru*; Hoeman, S.*; Yokota, Yuichiro; Hase, Yoshihiro; et al.

no journal, , 

no abstracts in English

Oral presentation

Thermal stability of Metal/High-k/GeO$$_{2}$$/Ge stacks fabricated by MBD method

Hideshima, Iori*; Tanaka, Ryohei*; Minoura, Yuya*; Yoshigoe, Akitaka; Teraoka, Yuden; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

no journal, , 

no abstracts in English

Oral presentation

High-$$k$$/Ge gate stack with an EOT of 0.56 nm by controlling high-$$k$$/Ge interface reaction using ultrathin AlO$$_{x}$$ interlayer

Tanaka, Ryohei*; Hideshima, Iori*; Minoura, Yuya*; Yoshigoe, Akitaka; Teraoka, Yuden; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

no journal, , 

no abstracts in English

Oral presentation

High-k/Ge gate stack with an EOT of 0.56 nm by controlling interface reaction using ultrathin AlO$$_{x}$$ interlayer

Hosoi, Takuji*; Hideshima, Iori*; Tanaka, Ryohei*; Minoura, Yuya*; Yoshigoe, Akitaka; Teraoka, Yuden; Shimura, Takayoshi*; Watanabe, Heiji*

no journal, , 

Oral presentation

Improvement of interfacial properties of high-k/Ge gate stacks by post-metal anneal

Tanaka, Ryohei*; Hideshima, Iori*; Minoura, Yuya*; Yoshigoe, Akitaka; Teraoka, Yuden; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

no journal, , 

no abstracts in English

21 (Records 1-20 displayed on this page)