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Sakamoto, Tomokazu*; Masuda, Teruyuki*; Yoshimoto, Koji*; Kishi, Hirofumi*; Yamaguchi, Susumu*; Matsumura, Daiju; Tamura, Kazuhisa; Hori, Akihiro*; Horiuchi, Yosuke*; Serov, A.*; et al.
Journal of the Electrochemical Society, 164(4), p.F229 - F234, 2017/01
Times Cited Count:12 Percentile:42.69(Electrochemistry)Yoshida, Kensuke*; Fujioka, Shinsuke*; Higashiguchi, Takeshi*; Ugomori, Teruyuki*; Tanaka, Nozomi*; Kawasaki, Masato*; Suzuki, Yuhei*; Suzuki, Chihiro*; Tomita, Kentaro*; Hirose, Ryoichi*; et al.
Applied Physics Letters, 106(12), p.121109_1 - 121109_5, 2015/03
Times Cited Count:8 Percentile:35.63(Physics, Applied)Yoshida, Kensuke*; Fujioka, Shinsuke*; Higashiguchi, Takeshi*; Ugomori, Teruyuki*; Tanaka, Nozomi*; Ohashi, Hayato*; Kawasaki, Masato*; Suzuki, Yuhei*; Suzuki, Chihiro*; Tomita, Kentaro*; et al.
Applied Physics Express, 7(8), p.086202_1 - 086202_4, 2014/08
Times Cited Count:28 Percentile:74.64(Physics, Applied)We demonstrate high conversion efficiency for extreme ultraviolet (EUV) emission at 6.5-6.7 nm from multiple laser beam-produced one-dimensional spherical plasmas. Multiply charged-state ions produce strong resonance emission lines, which combine to yield intense unresolved transition arrays in Gd, Tb, and Mo. The maximum in-band EUV conversion efficiency was observed to be 0.8%, which is one of the highest values ever reported due to the reduction of plasma expansion loss.
Wakai, Eiichi; Jitsukawa, Shiro; Tomita, Hideki*; Furuya, Kazuyuki; Sato, Michitaka*; Oka, Keiichiro*; Tanaka, Teruyuki*; Takada, Fumiki; Yamamoto, Toshio*; Kato, Yoshiaki; et al.
Journal of Nuclear Materials, 343(1-3), p.285 - 296, 2005/08
Times Cited Count:48 Percentile:94.02(Materials Science, Multidisciplinary)The dependence of helium production on radiation-hardening and -embrittlement has been examined in a reduced-activation martensitic F82H steel doped with B,
B and
B+
B irradiated at 250
C to 2.2 dpa. The total amounts of doping boron were about 60 massppm. The range of He concentration produced in the specimens was from about 5 to about 300 appm. Tensile and fracture toughness tests were performed after neutron irradiation. 50 MeV-He
irradiation was also performed to implant about 85 appm He atoms at 120
C by AVF cyclotron to 0.03 dpa, and small punch testing was performed to obtain DBTT. Radiation-hardening of the neutron-irradiated specimens increased slightly with increasing He production. The 100 MPam
DBTT for the F82H+
B, F82H+
B+
B, and F82H+
B were 40, 110, and 155
C, respectively. The shifts of DBTT due to He production were evaluated as about 70
C by 150 appmHe and 115
C by 300 appmHe. The DBTT shift in the small punch testing was evaluated as 50
C.
Ando, Masami; Wakai, Eiichi; Sawai, Tomotsugu; Matsukawa, Shingo; Naito, Akira*; Jitsukawa, Shiro; Oka, Keiichiro*; Tanaka, Teruyuki*; Onuki, Somei*
JAERI-Review 2004-025, TIARA Annual Report 2003, p.159 - 161, 2004/11
The objectives of this study are to evaluate radiation hardening on ion-irradiated F82H up to 100 dpa and to examine the extra component of radiation hardening due to implanted helium atoms (up to 3000 appmHe) in F82H under ratio of 0, 10, 100 appmHe/dpa.The ion-beam irradiation experiment was carried out at the TIARA facility of JAERI. Specimens were irradiated at 633 K by 10.5 MeV Fe ions with/without 1.05 MeV He ions. Micro-indentation tests were performed at loads to penetrate about 0.40 mm in the irradiated specimens using an UMIS-2000. The results are summarized as follows:1) As a result of the single irradiated F82H, the micro-hardness tended to increase about 30 dpa. 2) The extra radiation hardening was obviously caused by co-implanted helium atoms more than 1000 appm in F82H irradiated at 633 K. 3) In the dual-beam (100 appmHe/dpa) irradiated microstructure, nano-voids and fine defects were observed. It is suggested that the formation of nano-voids causes the extra radiation hardening by helium co-implantation.